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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 劉致為 | |
| dc.contributor.author | Tsang-Long Chen | en |
| dc.contributor.author | 陳藏龍 | zh_TW |
| dc.date.accessioned | 2021-06-08T01:25:04Z | - |
| dc.date.copyright | 2014-09-03 | |
| dc.date.issued | 2014 | |
| dc.date.submitted | 2014-08-01 | |
| dc.identifier.citation | CH1:
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Elliot,Physics of Amorphous Materials. New York: Longman, 1983. CH3: [1] K. Takechi, M. Nakata, K. Azuma, H. Yamaguchi, and S. Kaneko, “Dual-Gate Characteristics of Amorphous InGaZnO4 Thin-Film Transistors as Compared to Those of Hydrogenated Amorphous Silicon Thin-Film Transistors,” IEEE Trans. Electron Devices, vol. 56, no. 9, 2009. [2] K. Takechi, S. Iwamatsu, T. Yahagi, Y. Watanabe, S. Kobayashi, and H. Tanabe, “Characterization of Top-Gate Effects in Amorphous InGaZnO4 Thin-Film Transistors Using a Dual-Gate Structure,” Jpn. J. Appl. Phys., 51, 104201, 2012. [3] H.-W. Zan, W.-T. Chen, C.-C. Yeh, H.-W. Hsueh, C.-C. Tsai, and H.-F. Meng, “Dual gate indium-gallium-zinc-oxide thin film transistor with an unisolated floating metal gate for threshold voltage modulation and mobility enhancement,” Appl. Phys. Lett., vol. 98, 15, 153506, 2011. [4] J.-M. Lee, I.-T. Cho, J.-H. Lee, and H.-I. Kwon, “Full-Swing InGaZnO Thin Film Transistor Inverter with Depletion Load,” Jpn. J. Appl. Phys., 48, 100202, 2009. [5] G. Baek, K. Abe, A. Kuo, H. Kumomi, and J. Kanicki, “Electrical Properties and Stability of Dual-Gate Coplanar Homojunction DC Sputtered Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors and Its Application to AM-OLEDs,” IEEE Trans. Electron Devices, vol. 58, no. 12, 2011. [6] J.-H. Choi, H.-S. Seo, and J.-M. Myoung, “Dual-Gate InGaZnO Thin-Film Transistors with Organic Polymer as a Dielectric Layer,” Elec. Sol. State Lett., 12 (4) H145-H148, 2009. [7] K.-S. Son, J.-S. Jung, K.-H. Lee, T.-S. Kim, J.-S. Park, Y.-H. Choi, K. Park, J.-Y. Kwon, B. Koo, and S.-Y. Lee, “Characteristics of Double-Gate Ga-In-Zn-O Thin-Film Transitor,” IEEE Electron Device Lett., vol. 31, no. 3, pp. 219–221, 2010. [8] P. Servati, K. S. Karim, and A. Nathan, “Static Characteristics of a-Si:H Dual-Gate TFTs,” IEEE Trans. Electron Devices, vol. 50, no. 4, 2003. [9] T. Kamiya, K. Nomura, and H. Hosono, “Present status of amorphous In-Ga-Zn-O thin-film transistors,” Sci Technol. Adv. Mater., 11, 044305, 2010. [10] C. Chen, K.-C. Cheng, E. Chagarov, and J. Kanicki, “Crystalline In-Ga-Zn-O Density of States and Energy Band Structure Calculation Using Density Function Theory,” Jpn. J. Appl. Phys., 50, 091102, 2011. [11] S.-H. Choi, J.-H. Jang, J.-J. Kim, and M.-K. Han, “Low-Temperature Organic (CYTOP) Passivation for Improvement of Electric Characterstics and Reliability in IGZO TFTs,” IEEE Electron Device Lett., vol. 33, no. 3, 2012. [12] Y. W. Lee, S.-J. Kim, S.-Y. Lee, W.-G. Lee, K.-S. Yoon, J.-W. Park, J.-Y. Kwon, and M.-K. Han, “Effect of Ti/Cu Source/Drain on an Amorphous IGZO TFT Employing SiNx Passivation for Low Data-Line Resistance,” Elec. Sol. State Lett., 15 (4) H126-H129, 2012. [13] H.-H. Hsieh, T. Kamiya, K. Nomura, H. Hosono, and C.-C. Wu, “Modeling of amorphous InGaZnO4 thin film transistors and their subgap density of states,” Appl. Phys. Lett., vol. 92, 13, 133503, 2008. CH4: [1] K.-S. Son, J.-S. Jung, K.-H. Lee, T.-S. Kim, J.-S. Park, Y.-H. Choi, K. Park, J.-Y. Kwon, B. Koo, and S.-Y. Lee, “Characterisitics of Double-Gate Ga-In-Zn-O Thin-Film Transistor,”IEEE Electron Device Letters, vol. 31, no. 3, 2010. [2] H.-W. Zan, W.-T. Chen, C.-C. Yeh, H.-W. Hsueh, C.-C. Tsai, and H.-F. Meng, “Dual gate indium-gallium-zinc-oxide thin film transistor with an unisolated floating metal gate for threshold voltage modulation and mobility enhancement,” Appl. Phys. Lett., vol. 98, 15, 153506, 2011. [3] J.-M. Lee, I.-T. Cho, J.-H. Lee, and H.-I. Kwon, “Full-Swing InGaZnO Thin Film Transistor Inverter with Depletion Load” Jpn. J. Appl. Phys. , 48, 100202, 2009. [4] A. Suresh and J.F. Muth, “Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors,” Applied Physics Letters, vol. 92, 2008. [5] J. Lee, J.-S. Park, Y.S. Pyo, D.B. Lee, E.H. Kim, D. Stryakhilev, T.W. Kim, D.U. Jin, and Y.-G. Mo, “The influence of the gate dielectrics on threshold voltage instability in amorphous indium-gallium-zinc oxide thin film transistors,” Applied Physics Letters, vol. 95, 2009. [6] J.-M. Lee, I.-T. Cho, J.-H. Lee, and H.-I. Kwon, “Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors,” Applied Physics Letters, vol. 93, 2008. [7] H.-H. Hsieh, T. Kamiya, K. Nomura, H. Hosono, and C.-C. Wu, “Modeling of amorphous InGaZnO4 thin film transistors and their subgap density of states,” Appl. Phys. Lett., vol. 92, 13, 133503, 2008. [8] T. Kamiya, K. Nomura, and H. Hosono,“Present status of amorphous In–Ga–Zn–O thin-film transistors,” Science and Technology of Advanced Materials, vol. 11, 2010. CH5: [1] Y. W. Lee, S.-J. Kim, S.-Y. Lee, W.-G. Lee, K.-S. Yoon, J.-W. Park, J.-Y. Kwon, and M.-K. Han, “Effect of Ti/Cu Source/Drain on an Amorphous IGZO TFT Employing SiNx Passivation for Low Data-Line Resistance,” Elec. Sol. State Lett., 15 (4) H126-H129, 2012. [2] K.-S. Son, T.-S. Kim, J.-S. Jung, M.-K. Ryu, K.-B. Park, B.-W. Yoo, K. Park, J.-Y. Kwon, S.-Y. Lee, and J.-M. Kim, Electrochemical and Solid-State Letters, 12(1), H26 (2009). [3] H.-H. Hsieh, T. Kamiya, K. Nomura, H. Hosono, and C.-C. Wu, “Modeling of amorphous InGaZnO4 thin film transistors and their subgap density of states,” Appl. Phys. Lett., vol. 92, 13, 133503, 2008. [4] K.-S. Son, T.-S. Kim, J.-S. Jung, M.-K. Ryu, K.-B. Park, B.-W. Yoo, K. Park, J.-Y. Kwon, S.-Y. Lee, and J.-M. Kim, “Threshold Voltage Control of Amorphous Gallium Indium Zinc Oxide TFTs by Suppressing Back-Channel Current,” Electrochemical and Solid-State Letters, 12 (1) H26-H28 (2009). CH6: [1] B. Hoex, J. J. H. Gielis, M. C. M. van de Sanden, and W. M. M. Kessels, “On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3,” J. Appl. Phys., 104, 113703, 2008. [2] W.-W Hsu, J. Y. Chen, T.-H. Cheng, S. C. Lu, W.-S. Ho, Y.-Y. Chen, Y.-J. Chien, and C. W. Liu, “Surface passivation of Cu(In,Ga)Se2 using atomic layer deposited Al2O3,” Appl. Phys. Lett., 100, 023508, 2012. [3] S.-Y. Huang, T.-C. Chang, M.-C. Chen, S.-C. Chen, C.-T. Tsai, M.-C. Hung, C.-H. Tu, C.-H. Chen, J.-J. Chang, and W.-L. Liau, Elec. Sol. State. Lett., 14 (4), 2011. [4] J. R. Weber, A. Janotti, and C. G. Van de Walle, “Native defects in Al2O3 and their impact on III-V/Al2O3 metal-oxide-semiconductor-based devices,” J. Appl. Phys., 109, 033715, 2011. [5] T. Arai, N. Morosawa, K. Tokunaga, Y. Terai, E. Fukumoto, T. Fujimori, T. Nakayama, T. Yamaguchi, and T. Sasaoka, “Highly Reliable Oxide-Semiconductor TFT for AM-OLED Display,” SID Digest, vol. 41, 2010. [6] T.-L. Chen, K.-C. Huang, H.-Y. Lin, C. H. Chou, H. H. Lin, and C. W. Liu, “Enhanced Current Drive of Double Gate α-IGZO Thin Film Transistors,” IEEE Electron Device Lett., vol. 34, no. 3, 2013. [7] S.-M. Yoon, S.-H. Yang, S.-W. Jung, C.-W. Byun, S.-H. Ko Park, C.-S. Hwang, G.-G. Lee, E. Tokumitsu, and H. Ishiwara, “Impact of interface controlling layer of Al2O3 for improving the retention behaviors of In-Ga-Zn oxide-based ferroelectric memory transistor,” Appl. Phys. Lett., vol. 96, 232903, 2010. [8] J.-S. Park, J. K. Jeong, H.-J. Chung, Y.-G. Mo, and H. D. Kim, “Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water,” Appl. Phys. Lett., vol. 92, 072104, 2008. | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/18773 | - |
| dc.description.abstract | 在本論文中，著重於非晶相銦鎵鋅氧化物(α-IGZO)之薄膜材料分析與薄膜電晶體之電特性。相較於非晶相矽電晶體，α-IGZO薄膜電晶體之高電子遷移率(> 10 cm2/V-s)、高開/關比(> 107)、高穿透率，以及在製程上，可以在室溫中沉積並且可以有效的控制薄膜的均勻性等優點，α-IGZO 將是下一代薄膜電晶體很好的通道材料。
首先，利用廣波長之光源，量測在不同波段之α-IGZO薄膜之光吸收係數。配合Tauc plot的作圖計算，定義出α-IGZO薄膜之光能帶隙，並計算出α-IGZO薄膜之Urbach energy 以分析不同製程參數下的能矽中之缺陷態分布。經由上述方法，發現α-IGZO與氫反應後之Urbach energy變得較大，亦指出α-IGZO與氫反應後，其tail states之寬度較寬，使得α-IGZO 薄膜電晶體之電特性較差。 與單閘極操作相比，雙閘極操作下之α-IGZO TFTs擁有較大之驅動電流以及較小之次臨界擺幅。由於下閘極介電層以及上閘極介電層(包含蝕刻阻擋層與鈍化層)之氧化矽與氧化氮於製程中皆使用矽甲烷(SiH4)，將使得α-IGZO之上通道與下通道處有較多氫與α-IGZO反應，使得α-IGZO上通道與下通道之缺陷亦較多。α-IGZO薄膜電晶體於雙閘極操作下，有較多載子傳導於較少缺陷處(通道中間)，故其電子遷移率較高，由於上述現象，於雙閘極操作下之α-IGZO薄膜電晶體擁有較大之驅動電流，且其次臨界擺幅較小。 對於元件穩定度測試，探討由於偏壓應力施加導致元件失真的原因以及物理機制，例如：電性與偏壓應力分析等等。然而，元件的穩定度測試以及物理特性分析就變得特別重要。因此，對元件做於閘極上施加電性壓力測試，包含正偏壓與負偏壓之電性壓力，並探討元件電性衰減的物理機制。 下閘極操作之α-IGZO薄膜電晶體之製程中，主要使用氧化矽與氮化矽作為蝕刻阻擋層以及鈍化層，而上述材料製程中都會使用SiH4氣體，使得氫會進入α-IGZO上通道中並發生反應，由於下閘極操作下之α-IGZO薄膜電晶體易受到上通道品質之影響，故在蝕刻阻擋層製程中，相對於較高SiH4氣體量之氧化矽製程，利用較低SiH4氣體量之製程沉積氧化矽之α-IGZO薄膜電晶體之電性獲得改善。 由於下閘極操作下之α-IGZO 薄膜電晶體易受到上通道品質之影響，為了提升α-IGZO薄膜電晶體電性，可利用負電荷儲存於上閘極絕緣層中，使通道中電子被庫倫斥力推離上通道之高缺陷處，使電晶體之電性可以獲得改善。由於氧化鋁(Al2O3)為一帶有負電荷之材料，與氧化矽做為鈍化層之α-IGZO薄膜電晶體相比，利用氧化鋁鈍化層之α-IGZO薄膜電晶體有較高載子遷移率以及較佳操作穩定度。 | zh_TW |
| dc.description.abstract | In this dissertation, the material analysis and electrical characterization of amorphous InGaZnO thin film transistors (α-IGZO TFTs) are demonstrated. As compared with hydrogenated amorphous silicon TFTs, α-IGZO TFTs have high on/off current ratio (~107), high carrier mobility (>10 cm2/V-s), high optical transparency, low processing temperature, and good uniformity.
The material analysis of α-IGZO film is investigated. The optical absorption coefficient, Tauc gap, and Urbach energy are measured using a monochromator. Due to the optical analysis of α-IGZO films, high Urbach energy of hydrogen-incorporated α-IGZO film is found, and leads to high hydrogen-related subgap defects in α-IGZO film. The double gate operation α-IGZO TFTs can improve the electric performance such as higher drive current and lower subthreshold slope than that of single gate operation. The low density of hydrogen-related defect at the central channel is responsible for such enhancement. The electrical reliability is a very important issue for α-IGZO TFTs. The electrical reliability of α-IGZO TFT has been reported by the charge trapping mechanism and subgap state creation which would lead to VT shift. Therefore, the electrical reliability of dual gate α-IGZO TFTs are analyzed including positive bias instability and negative bias instability. The hydrogen-related defects degrade the electrical performance of α-IGZO TFTs. The low-hydrogen fabrication of etch-stop layer is used for bottom gate operation α-IGZO TFTs. As compared with α-IGZO TFTs using high-hydrogen fabrication, the electrical performance of α-IGZO TFTs using low-hydrogen fabrication of etch-stop layer is improved due to the decrease of hydrogen-related defects. Finally, the Al2O3-passivated α-IGZO TFTs reveal the higher mobility and better reliability than the SiOX-passivated devices. The negative fixed charges in the Al2O3-passivation layer can push electrons away from the defective top SiOX/InGaZnO interface by Coulomb repulsion, and the mobility enhancement was observed. The repulsion of electrons away from the poor top SiOX/InGaZnO interface can avoid the electron trapping in the top SiOX and then improve the reliability. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-08T01:25:04Z (GMT). No. of bitstreams: 1 ntu-103-D98943025-1.pdf: 5260485 bytes, checksum: f2efeae4361cd5436a2536f8760aa540 (MD5) Previous issue date: 2014 | en |
| dc.description.tableofcontents | Contents
List of Figures IX Chapter 1 Introduction 1.1 Motivation…………………………………………………………... 1 1.2 Dissertation Organization…………………………………………… 2 References………………………………………………………………. 5 Chapter 2 Material properties and optical analysis of α-IGZO films 2.1 Introduction………………………………………………………… 7 2.2 Subgap states of α-IGZO films……………………………………... 7 2.3 Optical analysis of α-IGZO films…………………………………... 20 2.4 Summary……………………………………………………………. 29 References……………………………………………………………… 30 Chapter 3 Enhanced current drive of double gate α-IGZO TFTs 3.1 Introduction………………………………………………………... 32 3.2 Process and experimental details…………………………………... 32 3.3 Mobility enhancement of double gate operation TFTs……………... 34 3.4 Simulation of double gate operation TFTs.………………………… 41 3.5 Summary…………………………………………………………… 45 References…………………………………………………………….... 47 Chapter 4 Reliability of dual gate α-IGZO TFTs 4.1 Introduction………………………………………………………. 50 4.2 Reliability of dual gate TFTs for bottom gate operation…………. 50 4.3 Reliability of dual gate TFTs for double gate operation………….. 59 4.4 Summary………………………………………………………….. 63 References…………………………………………………………….. 64 Chapter 5 Electrical characterization of α-IGZO TFTs using low-hydrogen fabrication of etch-stop layer 5.1 Introduction……………………………………………………….. 66 5.2 Process and experimental details………………………………….. 68 5.3Electrical performance enhancement of α-IGZO TFTs using low-hydrogen fabrication of etch-stop layer…………………………... 70 5.4 Reliability of α-IGZO TFTs using low-hydrogen fabrication of etch-stop layer…………………………………………………………. 73 5.5 Summary…………………………………………………………... 77 References…………………………………………………………….. 78 Chapter 6 Mobility and reliability enhancement of Al2O3-Passivated α-IGZO TFTs 6.1 Introduction………………………………………………………... 79 6.2 Mobility enhancement of dual-gate α-IGZO TFTs………………… 80 6.3Mobility enhancement of single-gate α-IGZO TFTs using Al2O3-passivation layer………………………………………………… 86 6.4 Reliability of Al2O3-passivated α-IGZO TFTs …………………….. 93 6.5 Summary……………………………………………………………. 95 References……………………………………………………………… 96 Chapter 7 Summary and Future Work 7.1 Summary……………………………………………………………. 98 7.2 Future work…………………………………………………………. 99 | |
| dc.language.iso | en | |
| dc.title | 非晶相銦鎵鋅氧化物薄膜電晶體之電性及穩定度分析 | zh_TW |
| dc.title | Electrical Characterization and Reliability Study of Amorphous IGZO TFTs | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 102-2 | |
| dc.description.degree | 博士 | |
| dc.contributor.oralexamcommittee | 林中一,林吉聰,陳敏璋,張書通,劉國辰 | |
| dc.subject.keyword | 非晶相銦鎵鋅氧化物,薄膜電晶體,光吸收,雙閘極操作,穩定度,低SiH4氣體量製程,氧化鋁鈍化層, | zh_TW |
| dc.subject.keyword | amorphous InGaZnO,thin film transistors,optical absorption,double gate operation,reliability,low-hydrogen fabrication of etch-stop layer,Al2O3-passivation layer, | en |
| dc.relation.page | 100 | |
| dc.rights.note | 未授權 | |
| dc.date.accepted | 2014-08-01 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
| 顯示於系所單位： | 電子工程學研究所 | |
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