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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 藍崇文(Chung-Wen Lan) | |
dc.contributor.author | Ming-Chang Wu | en |
dc.contributor.author | 吳明昌 | zh_TW |
dc.date.accessioned | 2021-06-08T01:03:29Z | - |
dc.date.copyright | 2014-09-10 | |
dc.date.issued | 2014 | |
dc.date.submitted | 2014-09-01 | |
dc.identifier.citation | [1] G. Masson, S. Orlandi, M. Rekinger, Global market outlook for photovoltaics 2014-2018, European Photovoltaic Industry Association, 2014.
[2] E.M. Sachs, D. Ely, J. Serdy, Edge stabilized ribbon growth of silicon for low-cost Photovoltaics, J. Cryst. Growth, 82 (1987) 117-121. [3] T.F. Ciszek, Edge-defined, film-fed growth (Efg) of silicon ribbons, Mater. Res. Bull, 7 (1972) 731-737. [4] H. Lange, I.A. Schwirtlich, Ribbon growth on substrate (Rgs) - a new approach to high-speed growth of silicon ribbons for photovoltaics, J. Cryst. Growth, 104 (1990) 108-112. [5] G. Hahn, P. Geiger, Record efficiencies for EFG and string ribbon solar cells, Prog. Photovoltaics, 11 (2003) 341-346. [6] H. Rodriguez, I. Guerrero, W. Koch, A.L. Endros, D. Franke, C. Hasler, J.P. Kalejs, H.J. Moller, Bulk crystal growth and wafering for PV, in: A. Luque and S. Hegedus (Eds.) Handbook of Photovoltaic Science and Engineering, Second Edition, John Wiley & Sons, Chichester, 2011, pp. 218-264. [7] A.M. Vallera, J.M. Alves, J.M. Serra, M.C. Brito, R.M. Gamboa, Linear electric molten zone in semiconductors, Appl. Phys. Lett., 90 (2010) 232111. [8] I. Costa, M.C. Brito, G. Gaspar, J.M. Serra, J.M. Alves, A. Vallera, Electric molten zone crystallization of silicon wafers, Semicond. Sci. Tech., 28 (2013) 125023. [9] I. Costa, M.C. Brito, J.M. Serra, J.M. Alves, A. Vallera, Experimental characterization of a linear electric molten zone in silicon, J. Cryst. Growth, 354 (2012) 198-201. [10] I. Costa, M.C. Brito, J.M. Alves, J.M. Serra, A.M. Vallera, Crystallization of silicon sheet using an electrically generated molten line, 26th European Photovoltaic Solar Energy Conference and Exhibition, (2011) 1904 - 1906. [11] M.C. Brito, A. Amaral, J.M. Alves, J.M. Serra, I. Costa, A.M. Vallera, Modeling a linear electric molten zone in a silicon ribbon, Prog. Photovoltaics, 17 (2009) 365-371. [12] B. Mackintosh, A. Seidl, M. Ouellette, B. Bathey, D. Yates, J. Kalejs, Large silicon crystal hollow-tube growth by the edge-defined film-fed growth (EFG) method, J. Cryst. Growth, 287 (2006) 428-432. [13] J.I. Hanoka, An overview of silicon ribbon growth technology, Sol. Energ. Mat. Sol. C., 65 (2001) 231-237. [14] L. Stockmeier, G. Mueller, A. Seidl, T. Lehmann, C. Reimann, J. Friedrich, Preferred grain orientations in silicon ribbons grown by the string ribbon and the edge-defined film-fed growth methods, J. Cryst. Growth, 395 (2014) 74-79. [15] C. Reimann, G. Muller, J. Friedrich, K. Lauer, A. Simonis, H. Watzig, S. Krehan, R. Hartmann, A. Kruse, Systematic characterization of multi-crystalline silicon String Ribbon wafer, J. Cryst. Growth, 361 (2012) 38-43. [16] G. Hahn, A. Schonecker, New crystalline silicon ribbon materials for photovoltaics, J. Phys-Condens. Mat., 16 (2004) R1615-R1648. [17] U. Hess, P.Y. Pichon, S. Seren, A. Schonecker, G. Hahn, Crystal defects and their impact on ribbon growth on substrate (RGS) silicon solar cells, Sol. Energ. Mat. Sol. C., 117 (2013) 471-475. [18] H. Yamatsugu, H. Mitsuyasu, S. Takakura, R. Oishi, K. Yoshida, Crystallization on dipped substrate wafer technology for crystallinesilicon solar cells reduces wafer costs, 23rd European Photovoltaic Solar Energy Conference, Feria Valencia, Spain, 2008. [19] S.E. M., Methods for efficiently making thin semiconductor bodies from molten material for solar cells and the like, Patent: US 8293009 A1, 2012. [20] T.F. Ciszek, Photovoltaic materials and crystal growth research and development in the Gigawatt era, J. Cryst. Growth, 393 (2014) 2-6. [21] W.Pfann, Zone Melting, 2nd edn, Wiley, NY, 1966 71 [22] A.M. Vallera, Method for the growth of semiconductor ribbons, Patent: US 0249981 A1, 2007. [23] S. Kimura, K. Terashima, A review of measurement of thermophysical properties of silicon melt, J. Cryst. Growth, 180 (1997) 323-333. [24] D.M. Pera, Linear electric molten zone stimulated by laser, 7th International Workshop on Crystalline Silicon Solar Cells (CSSC7) Oct. 22-25, 2013, Fukuoka, JAPAN, 2013. [25] F. Secco d' Aragona, Dislocation etch for (100) planes in silicon, J. Electrochem Soc., 119 (1972) 948-951. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/18403 | - |
dc.description.abstract | 太陽光電產業快速發展,仍以矽晶電池為主流,而目前太陽能電池晶片的主要成本在於切片,約為長晶成本的兩倍,且切割損失40 %的矽。因此,不需要切片的長晶技術具相當高的應用潛力,然而,現有技術所長出的矽薄片的生長缺陷仍高,且雜質過多,尚難與晶碇鑄造技術的晶片相抗衡。因此,無坩堝污染的電區融法提供了一個相當好的技術平台,沒有雜質的影響,且能精準控制長晶速度與溫梯,適合用來了解矽晶生長模式與其缺陷形成的行為,更可以加以改良,生長高品質的晶片。
為了證明上述概念,吾人選用不同類型矽晶片進行電區融實驗,吾人選用不同類型矽晶片進行電區融實驗,並探討電區融實驗參數對於長晶介面與缺陷生成的影響,包括移動速度、電流大小等。結果顯示電區融晶片的少數載子壽命主要由缺陷密度影響,在電致融區周圍高型變區圍繞著明顯紅區(低少數載子生命週期)與高缺陷密度。而吾人實驗結果顯示出,在區融實驗過程中成核可以藉由晶界釋放熱應力,因此能有較好的晶片品質。。 | zh_TW |
dc.description.abstract | With the rapid development of photovoltaic industry, silicon solar cell is still the main stream. Although the solar cell price has dropped greatly to $0.4 /Wp, the silicon wafer ($0.25 /Wp) remains the major cost. More than 40 % of high-purity silicon has been thrown away during slicing in the cutting slurry waste. Therefore, the kerf-free ribbon growth technology has attracted much attention in the cost reduction. Due to its contamination-free nature, the electrical molten zone crystallization proposed recently is very promising for high-quality ribbon production. In addition to its potential in applications, it is an ideal process for crystals growth study because the growth rate and the dopant uniformity could be better controlled. In-situ observation is also possible for the study of nucleation, grain competition, and defection formation.
To prove concept of that, we choose different type of silicon wafer to do experiments. The different experimental parameters such as applied current and drift velocity are further discussed. The results show that the minor carrier lifetime is influenced by etch pit density (EPD) and low lifetime area (red zone) encloses the electrical molten zone due to highly plastic deformation of silicon caused by high thermal gradient. Nucleation during the EMZC could release thermal stress via grain boundary to obtain better wafer quality. | en |
dc.description.provenance | Made available in DSpace on 2021-06-08T01:03:29Z (GMT). No. of bitstreams: 1 ntu-103-R01524063-1.pdf: 6130127 bytes, checksum: 79d782732b2560e4b0fe29ca5bbe6933 (MD5) Previous issue date: 2014 | en |
dc.description.tableofcontents | 致謝 i
中文摘要 ii Abstract iii 目錄 iv 圖目錄 vi 表目錄 ix 第一章 緒論 1 1-1前言 1 第二章 文獻回顧 4 2-1無切割矽晶帶製造技術 4 2-1-1矽晶帶製造技術分類 4 2-1-2主流無切割矽晶帶製造技術 4 2-1-2-1限邊薄片續填生長法(Edge-Defined Film-Fed Growth) 4 2-1-2-2線牽引矽帶生長法(String Ribbon) 5 2-1-2-3矽帶於基板之生長法(Ribbon Growth on Substrate) 6 2-1-2-4 基板浸潤結晶生長法(Crystallization on Dipped Substrate) 7 2-1-3 目前矽晶帶的發展與問題 8 2-2 電致區融法 9 2-2-1電致區融法原理 9 2-1-2電致區融法實驗 10 2-3 研究動機 13 第三章 實驗藥品、設備和流程 14 3-1實驗藥品 14 3-1-1 矽晶生長使用藥品 14 3-1-2 矽晶化學處理藥品 15 3-1-3 矽晶清洗處理藥品 15 3-2實驗設備系統 17 3-2-1 可視化電致區融系統 17 3-2-2 電致區融生長前後處設備 19 3-3實驗流程 26 3-3-1 樣品前處理 26 3-3-2 樣品的安裝 26 3-3-3 電致區融實驗步驟 28 3-4 實驗設計 28 第四章 結果與討論 31 4-1實驗溫場量測與融區觀察 31 4-1-1 穩態融區觀察 31 4-1-2 動態融區觀察與不同實驗晶片對動態融區溫梯影響 34 4-2 電區融實驗結果 42 4-2-1 典型電致區融實驗結果 42 4-2-2 不同起始晶片實驗少數載子壽命分布與缺陷分析 43 4-2-3 橢圓鏡遷移速率的影響 46 4-2-4施加於晶片電流之影響 49 第五章 結論 52 參考文獻 53 | |
dc.language.iso | zh-TW | |
dc.title | 電區融晶體生長與界面型態的觀察研究 | zh_TW |
dc.title | Crystal Growth and Morphology Observation of Electrical Zone Melting Silicon Ribbon | en |
dc.type | Thesis | |
dc.date.schoolyear | 102-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 洪儒生(Lu-Sheng Hong),徐文慶(Wen-Chin Hsu) | |
dc.subject.keyword | 電區融長晶,少數載子生命,缺陷密度, | zh_TW |
dc.subject.keyword | electric molten zone,dislocation density,lifetime, | en |
dc.relation.page | 55 | |
dc.rights.note | 未授權 | |
dc.date.accepted | 2014-09-01 | |
dc.contributor.author-college | 工學院 | zh_TW |
dc.contributor.author-dept | 化學工程學研究所 | zh_TW |
顯示於系所單位: | 化學工程學系 |
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