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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 管傑雄 | |
dc.contributor.author | Vin-Cent Su | en |
dc.contributor.author | 蘇文生 | zh_TW |
dc.date.accessioned | 2021-06-07T23:52:37Z | - |
dc.date.copyright | 2014-01-27 | |
dc.date.issued | 2013 | |
dc.date.submitted | 2013-12-04 | |
dc.identifier.citation | [1]. Schubert et al., “Light-Emitting Diodes,” second edition.
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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/16998 | - |
dc.description.abstract | 本篇論文探討氮化銦鎵類發光二極體成長於間距逐漸縮小的奈米圖案化藍寶石基板上之效應。此奈米圖案化藍寶石基板上之週期性奈米金字塔微結構係採用電子束微影方式搭配濕式蝕刻形成。
運用圖案化藍寶石基板之技術提升氮化銦鎵類發光二極體之亮度已經廣泛被探討。微米圖案化藍寶石基板可增加氮化銦鎵類發光二極體之光萃取效率,而奈米圖案化藍寶石基板可抑制氮化銦鎵類發光二極體之缺陷產生。但截至目前為止,奈米圖案化基板可以減少氮化銦鎵類發光二極體內部之量子侷限化史塔克效應,始終無深入探討。有鑑於此,氮化銦鎵類發光二極體成長於間距逐漸縮小的奈米圖案化藍寶石基板上與氮化銦鎵類發光二極體內部之量子侷限化史塔克效應兩者之間的關係,將於本篇論文深入探討。 本篇論文之內文包含長晶與量測分析。氮化銦鎵類發光二極體成長於間距逐漸縮小的奈米圖案化藍寶石基板上以及氮化銦鎵類發光二極體成長於拋光藍寶石基板上均具備相同磊晶參數。光致激發螢光之強度與封值能量的位移用於決定材料內部的內建電場大小。拉曼量測將用於提供磊晶層內之應力大小之計算。除此之外,將磊晶片經由業界標準的封裝流程,制備大功率氮化銦鎵類發光二極體之晶粒。此大功率氮化銦鎵類發光二極體之晶粒將用於測定發光二極體之相對發光強度以及探討效率衰減問題。實驗的結果發現,運用間距逐漸縮小的奈米圖案化藍寶石基板,可增強氮化銦鎵類發光二極體之光致激發螢光以及電致激發螢光之發光強度,主要的原因來自於減少氮化銦鎵類發光二極體內部之量子侷限化史塔克效應。 | zh_TW |
dc.description.provenance | Made available in DSpace on 2021-06-07T23:52:37Z (GMT). No. of bitstreams: 1 ntu-102-D97943025-1.pdf: 9017898 bytes, checksum: 9a142bf92cc39955a2bc89f9a2d45def (MD5) Previous issue date: 2013 | en |
dc.description.tableofcontents | 口試委員會審定書……………………………..………………...………...i
英文簽名頁……………………….…………………………...…………...ii 誌謝…………………………….……………………………...…………..iii 中文摘要…………………………………….………………...…………...v Abstract….………………………………………….…………...………..vii Contents………………………………………..……………...…………...ix List of Figures………………………………….………...………………..xi Chapter 1 Introduction…....………….…………...……….……...……...1 1.1 The brief history of InGaN-based LEDs……...….……......……...1 1.2 Solid-state lighting…………...…………………..….............…….3 1.3 Quantum-confined Stark Effect…...……………..………………4 1.4 Patterned sapphire substrates……………………………………...6 1.5 The organization of this doctoral dissertation…………………….8 Chapter 2 Experiments……………………………………………...….11 2.1 Sample preparation by E-beam lithography……………...……11 2.2 The growth condition of InGaN-based LEDs…...….……......….13 2.3 Measurement setup…….……...…………………..….............….14 Chapter 3 Quantum-Confined Stark Effect Influenced by Patterned Sapphire Substrates…....…………………….……..……...19 3.1 Constant-excitation power PL measurement…….….…...………19 3.2 Excitation power dependent PL measurement…….…………….20 3.3 Constant-excitation power Raman measurement………………..22 Chapter 4 Discussion…………....…………………….……..……..…33 3.1 Simulated LEE by ray-tracing method….……….….…...………34 3.2 EL characteristics………………………………………………..36 Chapter 5 Conclusion………………………………….……………......45 References………………………………………………………………47 | |
dc.language.iso | en | |
dc.title | 圖案化藍寶石基板對氮化銦鎵類發光二極體量子侷限化史塔克效應之影響 | zh_TW |
dc.title | Quantum-Confined Stark Effect of InGaN-Based Light-Emitting Diodes Influenced by Patterned Sapphire Substrates | en |
dc.type | Thesis | |
dc.date.schoolyear | 102-1 | |
dc.description.degree | 博士 | |
dc.contributor.oralexamcommittee | 林瑞明,孫允武,孫建文,陳啟東,黃建璋 | |
dc.subject.keyword | 電子束微影系統,圖案化藍寶石基板,發光二極體,拉曼頻譜, | zh_TW |
dc.subject.keyword | E-beam,Patterned substrates,Light-emitting diodes,Raman spectrum, | en |
dc.relation.page | 54 | |
dc.rights.note | 未授權 | |
dc.date.accepted | 2013-12-04 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
顯示於系所單位: | 電子工程學研究所 |
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