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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 林浩雄 | |
dc.contributor.author | Tsai-Hsing Wang | en |
dc.contributor.author | 王再興 | zh_TW |
dc.date.accessioned | 2021-06-07T18:17:28Z | - |
dc.date.copyright | 2012-03-19 | |
dc.date.issued | 2012 | |
dc.date.submitted | 2012-02-09 | |
dc.identifier.citation | [1] D.M. Chapin, C. S. Fuller and G. L. Pearson, “A new silicon p-n junction photocell for converting solar radiation into electrical power”, J. Appl. Phys. vol. 25, pp. 676-677, 1954.
[2] D.A. Jenny, J.J. Loferski and P. Rappaport, “Photovoltaic effect in GaAs p-n junctions and solar energy conversion”, Phys. Rev. vol. 101, pp. 1208-1209, 1956. [3] National Renewable Energy Laboratory. 2011. Research Cell Efficiency Records. Retrieved November 8, 2011, from http://www.nrel.gov/ncpv [4] R.R. King et al., “Next-generation, high-efficiency III-V multijunction solar cells”, Proc. IEEE PV Specialists Conference, Anchorage, pp. 998-1001, 2000. [5] M.A. Green et al., “Solar Cell Efficiency Tables (Version 27)”, Prog. PV: Res. Appl., 14, pp. 45-5114, 2006. [6] International Solar Energy Technology Conference. (2011). Advanced Cell Technologies for Concentrated. Photovoltaics. Retrieved November 28, 2011, from http://www.isetc.org/English/Archives/201110/ISETC2011_HYuen_Solar_Junction.pdf [7] W. Shockley and H. Queisser, “Detailed balance limit of efficiency of p-n junction solar cells”, J.of Applied Physics 32, 510 ,1961. [8] C.H. Henry, “Limiting efficiencies of ideal single and multiple energy-gap terrestrial solar-cells” , J. Appl. P51, 4494–4500, 1980. [9] J. Luther, A. Luque, A. W. Bett, F. Dimroth, H. Lerchenmüller,. G. Sala and C. Algora, “Concentration photovoltaics for highest effciencies and cost reduction” , Presented at the 20th European Photovoltaic Solar Energy Conference, DP5-1-4,2005. [10] 莊東漢,臺灣太陽光電產業發展概況,化工技術第18卷第6期,2010. [11] M. Yamaguchi, T. Takamoto, K. Araki and N. Ekins-Daukes, Sol. Energy,79, 78, 2005. [12] H. Cotal, C. Fetzer, J. Boisvert, G. Kinsey, R. King, P.Hebert, H. Yoon and N. Karam, “III–V multijunction solar cells for concentrating photovoltaics ”, Energy & Environmental Science, December, 2008. [13] S.R. Kurtz, D.J. Friedman, J. Geisz, and W. McMahon,“Using MOVPE Growth to Generate Tomorrow’s Solar Electricity” ,Journal of Crystal Growth, vol. 298, pp. 748-753, 2007. [14] W. Guter, A. W. Bett, “IV-Characterization of devices consisting of solar cells and tunnel diodes” , IEEE transactions on electron devices, 53, 2216-2222, 2006. [15] RPV series concentrator solar cell test system Instruction Manual 2.0,SWLink Ltd, 2009. [16] PN4300PC Electrochemical C-V Profiler with Photovoltage Spectroscopy user manual issue 4.0, Accent Optical Technologies, Inc. Printed in the UK,ch2, 2002. [17] D.K. Schroder, “Semiconductor Material and Device Characterization”, WILEY,pp. 144, 2006. [18] K. Nishioka, T. Takamoto, T. Agui, M. Kaneiwa, Y. Uraoka, and T. Fuyuki, “Evaluation of InGaP/InGaAs/Ge triple-junction solar cell and optimization of solar cell’s structure focusing on series resistance for high-efficiency concentrator photovoltaic systems”,Solar Energy Mater. Solar cells, vol. 90, pp. 1308-1321, 2006. [19] A. Luque, S. Hegedus, “Handbook of Photovoltaic Science and Engineering” , WILEY ,pp. 396, 2003. [20] W. Guter, A. W. Bett, ,” I–V CHARACTERIZATION OF TUNNEL DIODES AND MULTIJUNCTION SOLAR CELLS,” IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 53, NO. 9, 2006. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/16493 | - |
dc.description.abstract | 本論文以有機金屬氣相化學沈積法成長具有不同穿隧二極體摻雜濃度的多接面太陽能電池,並以同一晶片製作多接面太陽能電池樣品及穿隧二極體元件樣品。我們以RPV測試技術測定多接面太陽電池中穿隧二極體的Jpeak與Jvalley,並與單獨穿隧二極體元件的I-V特性做比較。實驗結果顯示,RPV測定的Jpeak誤差不超過6%,Jvalley的誤差較大可達50%。RPV所測得Jpeak的高準確性顯示此種測定技術應用多接面太陽能生產檢測的潛力。
本論文對RPV技術進行了原理探討、等效電路分析、以及實際的測試應用。這種技術的了解與發展,將有助於太陽能電池的製造與設計最佳化,應用於高聚光型太陽光伏系統時,可避免因穿隧二極體的品質不良所造成的損失。 | zh_TW |
dc.description.abstract | This thesis reports on RPV method, which is able to characterize the tunnel junctions embedded in triple-junction solar cells. We used MOCVD to deposit solar cell structure with different tunnel junction designs. Solar cells and tunnel junctions were fabricated on the same wafer. RPV method was used to probe the peak and valley currents of the tunnel junctions embedded in the solar cells. The results were compared with the I-V characteristics measured from the tunnel junction. We found that the difference of Jpeak is within 6%. While Jvalley has larger deviation, may up to 50%. The small difference in Jpeak suggests the high validity of RPV method, which reveals its potential in testing triple-junction solar cells.
In this thesis, we presented the operational principles, equivalent circuit analysis, and practical applications of RPV method. The understanding of this method will facilitate the design and fabrication of triple-junction solar cells. RPV method can be used to eliminate the loss due to the failure of tunnel junctions in solar cells. | en |
dc.description.provenance | Made available in DSpace on 2021-06-07T18:17:28Z (GMT). No. of bitstreams: 1 ntu-101-P98943004-1.pdf: 2280019 bytes, checksum: 80d835770ff6363e30d7506c7f8e54f3 (MD5) Previous issue date: 2012 | en |
dc.description.tableofcontents | 誌謝 i
中文摘要 ii ABSTRACT iii CONTENTS iv 附圖索引 vi 附表索引 ix 第 一 章 序論 1 1.1 再生能源 1 1.2 太陽光伏技術 1 1.3 聚光型多接面太陽電池技術 3 1.4 穿隧二極體及其測定技術 5 1.5 本論文的章節架構 8 第 二 章 測量系統與太陽能電池元件 9 2.1 測量系統 10 2.1.1 電化學電容電壓量測法 (ECV) 10 2.1.2 RPV系統圖 11 2.1.3 RPV量測原理 12 2.1.4 不同峰值電流密度下RPV曲線 15 2.1.5 串聯電阻RS 20 2.2 多接面太陽能電池穿隧二極體元件樣品結構與製作 23 2.2.1 多接面太陽能電池穿隧二極體元件樣品結構 23 2.2.2 太陽能電池之樣品製作 24 2.2.3 穿隧二極體元件之樣品製作 28 第 三 章 結果與討論 31 3.1 濃度量測及結果討論 31 3.2 太陽能電池樣品量測及結果討論 34 3.3 穿隧二極體元件樣品量測及結果討論 38 3.4 穿隧二極體元件樣品歐姆接觸量測及結果討論 44 第 四 章 總結 47 參考文獻 48 | |
dc.language.iso | zh-TW | |
dc.title | 用以檢測多接面太陽能電池中穿隧二極體特性的RPV技術 | zh_TW |
dc.title | RPV method used to characterize the tunneling junctions embedded in Tripe-junction Solar Cells | en |
dc.type | Thesis | |
dc.date.schoolyear | 100-1 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 黃朝興,蔡世貞,王智祥 | |
dc.subject.keyword | RPV,穿隧二極體,多接面太陽能電池, | zh_TW |
dc.subject.keyword | RPV,tunnel junction,Tripe-junction Solar Cells, | en |
dc.relation.page | 50 | |
dc.rights.note | 未授權 | |
dc.date.accepted | 2012-02-09 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
顯示於系所單位: | 電子工程學研究所 |
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