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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/16340完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 蔡定平 教授 | |
| dc.contributor.author | Yen-Ju Liu | en |
| dc.contributor.author | 劉燕儒 | zh_TW |
| dc.date.accessioned | 2021-06-07T18:10:30Z | - |
| dc.date.copyright | 2012-07-20 | |
| dc.date.issued | 2012 | |
| dc.date.submitted | 2012-07-06 | |
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/16340 | - |
| dc.description.abstract | 相變化材料（Phase-change material）可藉由外在施加能量而使其在結晶態或非晶態之間做可逆的轉換，因此被廣泛地應用於高密度記錄之光儲存、相變化記憶體與半導體元件中。
本實驗是以濺鍍方式製備非晶態之相變化材料鍺銻碲（Ge2Sb2Te5, GST）薄膜，再藉由雷射加工使GST薄膜轉態成為結晶態，所使用的脈衝雷射可調整雷射功率（2mW~20mW）以及雷射脈衝長度（100ns~1500ns），藉由雷射改變製作不同類型的紀錄點，最後再以導電式原子力顯微儀（Conductive atomic force microscopy, C-AFM）以及光學顯微量測系統對紀錄點進行表面形貌、導電性以及光學性質之研究。 同時以雷射轉印術進行GST質量轉移，以非晶態的GST薄膜作為母版，玻璃基板作為母版，利用雷射聚焦於GST薄膜上，使其熔融並轉印至子版，觀察其轉印結構之製成穩定度以及結構均勻度。 | zh_TW |
| dc.description.abstract | Phase-change materials are used in rewritable optical disks and phase-change electronic memories. The application of phase-change materials are due to the ease and reversibility of the phase-transition between amorphous and crystalline state.
Amorphous thin films of Ge2Sb2Te5, sputter-deposited on a thin-film gold electrode, are investigated to understanding the local electrical conductivity under the influence of focused laser beam. The various laser power (2.0mW~20mW) and pulse duration (100ns~1500ns) used in writing recorded marks.The local conductivity of recorded marks and crystalline line can be investigated by a high-resolution and high-sensitivity of conductive atomic force microscopy (C-AFM). Laser-induced forward transfer (LIFT) technique is a high-throughput fabrication method. Using the femtosecond laser pulses focused on a thin film of Ge2Sb2Te5 phase-change material, and transfer the illuminated material to a nearby substrate. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-07T18:10:30Z (GMT). No. of bitstreams: 1 ntu-101-R99245007-1.pdf: 2981566 bytes, checksum: d370413891ffd112037ff2ed467d6bc8 (MD5) Previous issue date: 2012 | en |
| dc.description.tableofcontents | 中文摘要 I
Abstract II 目錄 III 圖目錄 V 表目錄 VII 第一章、緒論 1 1.1 前言 1 1.2 相變化材料 1 1.2.1 相變化過程 1 1.2.2 相變化結晶過程類型 3 1.2.3 相變化材料演進 5 1.2.4 相變化材料Ge2Sb2Te5結構 6 1.2.5 相變化材料Ge2Sb2Te5相態之間性質之差異 10 第二章、實驗儀器設備及基本原理 14 2.1 前言 14 2.2 四靶濺鍍機 14 2.2.1 儀器簡介及用途 14 2.2.2 樣品製作參數 17 2.3 靜態測試儀 17 2.3.1 儀器簡介及用途 17 2.3.2 儀器架構與元件介紹 18 2.3.2.1 儀器架構 18 2.3.2.2 雷射光泵探系統主要光學元件介紹 19 2.3.2.3 光學寫入實驗流程 23 2.4 超快雷射光學系統 24 2.4.1 超快雷射光學系統架構 24 2.4.2 儀器架構與元件介紹 25 2.5原子力顯微鏡 33 2.5.1 掃描探針顯微術 33 2.5.2 原子力顯微儀基本原理 33 2.5.3 原子力顯微儀基本操作模式 35 2.5.4 導電式原子力顯微儀 37 2.5.5 本實驗所使用之原子力顯微儀 37 第三章、實驗結果與分析 39 3.1 前言 39 3.2 樣品製備 39 3.3 實驗結果 40 3.3.1相變化材料鍺銻碲紀錄點性質之研究 40 3.3.2以雷射轉印技術製作相變化材料鍺銻碲微結構 49 3.4 實驗結果討論 51 第四章、結論 52 第五章、參考文獻 53 | |
| dc.language.iso | zh-TW | |
| dc.subject | 雷射轉印術 | zh_TW |
| dc.subject | 相變化材料 | zh_TW |
| dc.subject | 雷射直寫技術 | zh_TW |
| dc.subject | 導電式原子力顯微儀 | zh_TW |
| dc.subject | conductive atomic force microscopy | en |
| dc.subject | Phase-change material | en |
| dc.subject | Laser-induced forward transfer (LIFT) | en |
| dc.subject | laser direct-write techniques | en |
| dc.title | 以雷射直寫技術製作相變化材料微結構之研究 | zh_TW |
| dc.title | Nanofabrication of phase-change material structures by laser direct-write techniques | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 100-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 周趙遠鳳 教授,黃鼎偉 教授 | |
| dc.subject.keyword | 相變化材料,雷射直寫技術,導電式原子力顯微儀,雷射轉印術, | zh_TW |
| dc.subject.keyword | Phase-change material,laser direct-write techniques,conductive atomic force microscopy,Laser-induced forward transfer (LIFT), | en |
| dc.relation.page | 57 | |
| dc.rights.note | 未授權 | |
| dc.date.accepted | 2012-07-06 | |
| dc.contributor.author-college | 理學院 | zh_TW |
| dc.contributor.author-dept | 應用物理所 | zh_TW |
| 顯示於系所單位： | 應用物理研究所 | |
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