N型矽基板太陽能電池的製作，量測與理論分析

Abstract

由於矽晶太陽能電池的穩定性以及高轉換效率，使矽晶太陽能電池在太陽能產業上佔了極大部分，雖然此技術在量產上的結構已經發展的很完整，但是在高轉換效率的技術上能存在許多的挑戰。 本論文中，N型矽基板上同質接面太陽能電池的製程是利用離子佈值技術來製作硼射極以及磷背面電場。利用合適的退火條件，離子佈值中摻雜離子可以被活化，且佈值中造成的損害可以被修復。為了更佳的效率，基礎的分析是必要的，本論文中會分別用p+np+及用n+nn+的對稱性結構分析射極及基板的特性。 最後，我們在之前討論的都是表面平坦的太陽能電池，但是，要做出高效率的太陽能電池是不夠的。為了做出高效率的太陽能電池，表面結構是必要的。為了增加短路電流，我們要增加太陽能電池捕捉光的能力。但是這會增加太陽能電池的表面積，導致增加射極電流，進而降低開路電壓。本章再討論該如何解決這個問題。

Wafer based solar cell accounts for the production of a large part in photovoltaic industry due to its stability and high efficiency. Although the technology of wafer based solar cell has been well-developed for conventional structure, there are still numerous new challenges existing for the high efficiency solar cell. In this thesis, the fabrication process of n-type silicon based homojunction solar cell is demonstrated by using ion implantation to form the boron emitter and phosphorous back surface field. By using appropriate annealing condition, The implanted dopants and damage introduced by the implantation can be activated and repaired, respectively. For better efficiency, fundamental analysis is necessary.Using p+np+ and n+nn+ symmetrical structure to analyze characteristic of emitter and base in the thesis. Finally, There are surface planar solar cells we discuss before. But it’s not enough to make high efficient solar cell. For high efficient solar cell, surface texture is necessary. In order to increase short circuit current, we should increase light trapping in our solar cell. But it will increase the total surface of solar cells, it will increase the emitter saturation current density and leads to lower open circuit voltage.