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  1. NTU Theses and Dissertations Repository
  2. 電機資訊學院
  3. 電子工程學研究所
請用此 Handle URI 來引用此文件: http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/16103
完整後設資料紀錄
DC 欄位值語言
dc.contributor.advisor陳怡然
dc.contributor.authorLi-Wei Linen
dc.contributor.author林立偉zh_TW
dc.date.accessioned2021-06-07T18:01:08Z-
dc.date.copyright2012-08-09
dc.date.issued2012
dc.date.submitted2012-08-06
dc.identifier.citation[1] King-Chun Tsai, and Paul R. Gray, “A 1.9-GHz, 1-W CMOS Class-E Power Amplifier for Wireless Communications,” IEEE J. Solid-State Circuits, vol. 34, no. 7, pp. 962-970, Jul. 1999.
[2] Ichiro Aoki, Scott D. Kee, David B. Rutledge, and Ali Hajimiri, “Fully Integrated CMOS Power Amplifier Design Using the Distributed Active-Transformer Architecture,” IEEE J. Solid-State Circuits, vol. 37, no. 3, pp. 371-383, Mar. 2002.
[3] Changkun Park, Jeonghu Han, Haksun Kim, and Songcheol Hong, “A 1.8-GHz CMOS Power Amplifier Using a Dual-Primary Transformer With Improved Efficiency in the Low Power Region,” IEEE Trans. Microw. Theory Tech., vol. 56, no.4, pp. 782–792, Apr. 2008.
[4] Dong Ho Lee, Changkun Park, Jeonghu Han, Younsuk Kim, Songcheol Hong, Chang-Ho Lee, and Joy Laskar, “A Load-Shared CMOS Power Amplifier With Efficiency Boosting at Low Power Mode for Polar Transmitters,” IEEE Trans. Microw. Theory Tech., vol. 56, no.7, pp. 1565–1574, July 2008.
[5] Kyu Hwan An, Ockgoo Lee, Hyungwook Kim, Dong Ho Lee, Jeonghu Han, Ki Seok Yang, Younsuk Kim, Jae Joon Chang, Wangmyong Woo, Chang-Ho Lee, Haksun Kim, and Joy Laskar, “Power-Combining Transformer Techniques for Fully-Integrated CMOS Power Amplifiers,” IEEE J. Solid-State Circuits, vol. 43, no. 5, pp. 1064–1075, May. 2008.
[6] Ichiro Aoki, Scott Kee, Rahul Magoon, Roberto Aparicio, Florian Bohn, Jeff Zachan, Geoff Hatcher, Donald McClymont, and Ali Hajimiri, “A Fully-Integrated Quad-Band GSM/GPRS CMOS Power Amplifier,“ IEEE J. Solid-State Circuits, vol. 43, no. 12, pp. 2747–2758, Dec. 2008.
[7] Hongtak Lee, Changkun Park, and Songcheol Hong, “A Quasi-Four-Pair Class-E CMOS RF Power Amplifier With an Integrated Passive Device Transformer,“ IEEE Trans. Microw. Theory Tech., vol. 57, no.4, pp. 752–759, Apr. 2009.
[8] Sunbo Shim, and Songcheol Hong, “A 1-W, 800-MHz, Switch-mode CMOS RF Power Amplifier Using an On-Chip Transformer with Double Primary Sides,“ IEEE Radio and Wireless Symposium, pp. 538–541, Jan. 2009.
[9] Chang-Ho Lee, Jae Joon Chang, Ki Seok Yang, Kyu Hwan An, Izuka Lee, Kijoong Kim, Joongjin Nam, Yunseok Kim, Haksun Kim, “A Highly Efficient GSM/GPRS Quad-band CMOS PA Module,“ IEEE RFIC Symposium, pp. 229–232, Jun. 2009.
[10] Jihwan Kim, Hyungwook Kim, Youngchang Yoon, Kyu Hwan An, Woonyun Kim, Chang-Ho Lee, Kornegay, K.T., Laskar, J, “A Discrete Resizing and Concurrent Power Combining Structure for Linear CMOS Power Amplifier,“ IEEE RFIC Symposium, pp. 387–390, May 2010.
[11] Ockgoo Lee, Jeonghu Han, Kyu Hwan An, Dong Ho Lee, Kun-Seok Lee, Songcheol Hong, and Chang-Ho Lee, “A Charging Acceleration Technique for Highly Efficient Cascode Class-E CMOS Power Amplifiers, “IEEE J. Solid-State Circuits, vol. 45, no. 10, pp. 2184–2197, Oct. 2010.
[12] Changkun Park, Dong Ho Lee, Yumi Lee, Jeonghu Han, Sang-Hyun Baek, Younsuk Kim, and Songcheol Hong, “1.8-GHz CMOS Power Amplifier with Stage-Convertible Structure Using Differential Line Inductor”, Radio Frequency Integrated Circuits (RFIC) Symposium, 2007 IEEE.
[13] Kyu Hwan An, Dong Ho Lee, Ockgoo Lee, Hyungwook Kim, Jeonghu Han, Woonyun Kim, Chang-Ho Lee, Haksun Kim, and Joy Laskar, “2.4 GHz Fully Integrated Linear CMOS Power Amplifier With Discrete Power Control”, IEEE MWCL, Vol19, No.7, pp.479-481, July 2009.
[14] Ki Yong Son, Changkun Park, and Songcheol Hong, “A 1.8-GHz CMOS Power Amplifier Using Stacked nMOS and pMOS Structures for High-Voltage Operation”, IEEE Trans. Microw. Theory Tech., vol. 57, no.11, pp. 2652–2660, Nov. 2009.
[15] Yonghoon Song, Sungho Lee, Eunil Cho, Jaejun Lee, and Sangwook Nam, “A CMOS Class-E Power Amplifier With Voltage Stress Relief and Enhanced Efficiency”, IEEE Trans. Microw. Theory Tech., vol. 58, no.2, pp. 310–317, Feb. 2010.
[16] Gang Liu, Peter Haldi, Tsu-Jae King Liu, and Ali M. Niknejad, “Fully Integrated CMOS Power Amplifier With Efficiency Enhancement at Power Back-Off”, IEEE J. Solid-State Circuits, vol. 43, no. 3, pp. 600–609, March. 2008.
[17] Jinsung Choi, Jounghyun Yim, Jinho Yang, Jingook Kim, Jeonghyun Cha, Daehyun Kang, Dongsu Kim, and Bumman Kim, “A Δ Σ-Digitized Polar RF Transmitter”, IEEE Trans. Microw. Theory Tech., vol. 55, no.12, pp. 2679–2690, Dec. 2007.
[18] Ildu Kim, Young Yun Woo, Jangheon Kim, Junghwan Moon, Jungjoon Kim, and Bumman Kim, “High-Efficiency Hybrid EER Transmitter Using Optimized Power Amplifier”, IEEE Trans. Microw. Theory Tech., vol. 56, no.11, pp. 2582–2593, Nov. 2008.
[19] N. O. Sokal and A. D. Sokal, “Class-E: A new class of high-efficiency tuned single-ended switching power amplifiers,” IEEE J. Solid-State Circuits, vol. SC-10, pp. 168–176, June 1975.
[20] Scott D. Kee, Ichiro Aoki, Ali Hajimiri, and David Rutledge, “The Class-E/F Family of ZVS Switching Amplifiers”, IEEE Trans. Microw. Theory Tech., vol. 51 no.6, pp. 1677–1690, Jun. 2003.
[21] S. C. Cripps, RF Power Amplifiers for Wireless Communication. Norwood, MA: Artech House, 1999.
[22] J.-H. Chen, H.-S. Yang, and Y.-J. E. Chen, “A Technique for Implementing Wide Dynamic-Range Polar Transmitters”, IEEE Trans. Microw. Theory Tech., vol. 58, no. 9, pp. 2368–2374, Sep. 2010.
[23] Ki Young Kim, Woo Young Kim, Hyuk Su Son, Inn Yeal Oh, and Chul Soon Park, “A Reconfigurable Quad-Band CMOS Class E Power Amplifier for Mobile and Wireless Applications”, IEEE MWCL, Vol. 21, No.7, pp.380-382, July 2011.
[24] Jonas Fritzin, Christer Svensson and Atila Alvandpour, “A Wideband Fully Integrated +30dBm Class-D Outphasing RF PA in 65nm CMOS”, International Symposium on Integrated Circuits (ISIC), pp.25-28, Dec 2011.
[25] Bonhoon Koo, Yoosam Na, and Songcheol Hong, “Integrated Bias Circuits of RF CMOS Cascode Power Amplifier for Linearity Enhancement”, IEEE Trans. Microw. Theory Tech., vol. 60, no. 2, pp. 340–351, Feb. 2012.
[26] Debopriyo Chowdhury, Siva V. Thyagarajan, Lu Ye, Elad Alon, and Ali M. Niknejad, “A Fully-Integrated Efficient CMOS Inverse Class-D Power Amplifier for Digital Polar Transmitters,” IEEE J. Solid-State Circuits, vol. 47, no. 5, pp. 1113–1122, May. 2012.
[27] Amirpouya Kavousian, David K. Su, Mohammad Hekmat, Alireza Shirvani, and Bruce A. Wooley, “A Digitally Modulated Polar CMOS Power Amplifier With a 20-MHz Channel Bandwidth,” IEEE J. Solid-State Circuits, vol. 43, no. 10, pp. 2251–2258, Oct. 2008.
dc.identifier.urihttp://tdr.lib.ntu.edu.tw/jspui/handle/123456789/16103-
dc.description.abstract近年來手機的應用有顯著的進步,並引領全球電子商業發展;隨著整合了更多的功能:如全球定位系統(GPS)、簡易文書處理與無線上網等功能,劇烈占據了如筆記型電腦等電子應用商品版圖。然而為了整合這些功能,必須試圖對電路系統作整合,以期能最大化的整合於手機功能晶片上。
有鑒於CMOS製程容易積體化,且應用範圍廣泛,技術也越來越成熟;主要區塊電路更加容易一起整合到手機晶片系統上。然而用標準CMOS實現射頻功率放大器有許多限制如:低崩潰電壓、低功率輸出密度、高能量耗損等缺點。所以功率放大器模組在射頻的積體電路中,是唯一尚未被成功整合進CMOS單晶片的區塊,為了進一步降低工業成本、產品體積,發展CMOS射頻功率放大器將是值得努力的方向;本文針對CMOS的缺點,低輸出功率方面提出了以功率結合器的解決方案;低效率方面則提出了採用E類功率放大器的解決方法。
對於3G系統的規範,其線性度有更高的要求。由於在功率放大器的設計上,效率與線性度無法兼得。對於高效率的功率放大器,提出以數位極座標發射器來達成線性度的要求。在此使用三角積分調變的功率放大器。針對控制16路功率放大器的輸入信號,達成通過3G通信標準CDMA2000的目標。
zh_TW
dc.description.abstractSignificant developments on mobile phone applications have been made in recent years, leading the prosperous growth of global e-commerce. With the integration of more and more functions, including Global Positioning System (GPS), simple word processing, and wireless internet access, etc. The smart mobile phone has been replacing many electronic products such as notebook and GPS. Accordingly, the integration of functions is the next step for mobile phone development.
The CMOS process is a mature technology. It is widely applied with most circuit. However when using standard CMOS, there are several limitations such as lower breakdown voltage, lower output power density, and higher power dissipation. To minimize the shortcomings of CMOS, this thesis presents the solutions as follows. The power combiner is used to solve for low output power, and the class E PA is used to achieve high efficiency.
In addition, the 3G communication specifications require high linearity. A trade-off exists between efficiency and linearity. Using digital polar transnmitter method, both linearity and efficiency can be achieved. We apply the delta sigma modulation to power amplifier for the specification of the 3G system. With the control of 16-way power amplifiers, we can reach the CDMA2000 specification.
en
dc.description.provenanceMade available in DSpace on 2021-06-07T18:01:08Z (GMT). No. of bitstreams: 1
ntu-101-R97943126-1.pdf: 6476337 bytes, checksum: 481f2f5b7cf8f31f058ac843d4897fda (MD5)
Previous issue date: 2012
en
dc.description.tableofcontents摘要 I
Abstract III
圖目錄 VII
表目錄 XI
第一章 簡介 1
1.1 動機 1
1.2 論文組織 3
第二章 近期發展 5
2.1 簡介 5
2.2 CMOS 功率放大器 6
2.2.1 崩潰機制 6
2.2.2 近期國際論文 8
2.2.3 總結 13
第三章 E類功率放大器 15
3.1 高效率功率放大器 15
3.2 E類功率放大器架構 16
3.3 E類功率放大器模擬驗證 20
3.4 差動式E類功率放大器 22
第四章 功率結合器 24
4.1 功率結合器概述 24
4.2 威爾金森功率結合器 25
4.3 鼠徑式功率結合器 26
4.4 變壓器 28
4.4.1 晶片上之變壓器 29
4.4.2 被動整合元件之變壓器 36
第五章 0.18微米CMOS功率放大器之設計 39
5.1 簡介 39
5.2 電路設計 40
5.3 功率結合之變壓器 46
5.4 模擬 54
5.5 量測結果 63
5.5.1 測試 PCB 板 63
5.5.2 量測設定 64
5.5.3 量測結果 64
第六章 16路三角積分調變之功率放大器模組 69
6.1 電路設計 69
6.2 元件選擇 71
6.2.1 功率放大器電晶體 71
6.2.2 開關元件 73
6.2.3 功率結合器 / 分配器元件 75
6.3 PA 系統量測 78
6.3.1 PA電路板設計 78
6.3.2 8路合為4路之功率結合器製作 83
6.3.3 1路分為8路之功率分配器製作 86
6.3.4 全系統16路功率放大器量測 88
6.4 三角積分調變應用於CDMA2000系統 90
第七章 結論 93
參考文獻 95
dc.language.isozh-TW
dc.title應用於CDMA2000手機的高效率射頻功率放大器zh_TW
dc.titleDevelopment of High Efficiency RF PAs for CDMA2000 Cellular Handsetsen
dc.typeThesis
dc.date.schoolyear100-2
dc.description.degree碩士
dc.contributor.oralexamcommittee邱煥凱,陳昭宏,蔡政翰,陳筱青
dc.subject.keyword互補式金氧半,功率放大器,E類放大器,功率結合器,變壓器,極座標發射器,三角積分調變,CDMA2000,zh_TW
dc.subject.keywordCMOS,Power Amplifier,Class E,Power Combiner,Transformer,polar transmitter,delta sigma modulation,CDMA2000,en
dc.relation.page98
dc.rights.note未授權
dc.date.accepted2012-08-06
dc.contributor.author-college電機資訊學院zh_TW
dc.contributor.author-dept電子工程學研究所zh_TW
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