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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/16020完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 周元昉(Yuan-Fang Chou) | |
| dc.contributor.author | Tsung-Hua Yang | en |
| dc.contributor.author | 楊宗樺 | zh_TW |
| dc.date.accessioned | 2021-06-07T17:58:18Z | - |
| dc.date.copyright | 2012-08-15 | |
| dc.date.issued | 2012 | |
| dc.date.submitted | 2012-08-10 | |
| dc.identifier.citation | 1. Sungkyu Lee, “Photolithography and Selective Etching of Array of Quartz Tuning Fork Resonators with Improved Impact Resistance Characteristics,” Japanese Journal of Applied Physics, Vol. 40, No. 8, pp. 5164-5167, 2001.
2. Hal Edwards, Larry Taylor, Walter Duncan, and Allan J. Melmed, “Fast, High-Resolution Atomic Force Microscopy Using a Quartz Tuning Fork as Actuator and Sensor,” Journal of Applied Physics, Vol.82, No. 3, 1997. 3. Sungkyu Lee, “Photolithography and Selective Etching of Array of Surface Mount Device 32.768 kHz Quartz Tuning Fork Resonators: Definition of Side-Wall Electrodes and Interconnections Using Stencil Mask,” Japanese Journal of Applied Physics, Vol. 40, No. 9A, pp. 5480-5484, 2001. 4. J. S. Danel and G. Delapierre, “Quartz: a Material for Microdevices,” Journal of Micromechanics and Microengineering, Vol.1, pp. 187-198, 1991. 5. Pelle Rangsten, Christer Hedlund, Ilia V Katardjiev and Ylva Backlund, “Etch Rates of Crystallographic Planes in Z Cut Quartz —Experiments and Simulation,” Journal of Micromechanics and Microengineering, Vol. 8, pp. 1–6, 1998. 6. Christer Hedlund, Ulf Lindberg, Urban Bucht and Jan Soderkvist, “Anisotropic Etching of Z-cut Quartz,” Journal of Micromechanics and Microengineering, Vol.3, pp. 65-73, 1993. 7. Di Cheng, Kazuo Sato, Mitsuhiro Shikida, Atsushi Ono, Kenji Sato, Kazuo Asaumi and Yusuroh Iriye, “Development of Quartz Etching Database and 3-D Micromaching Simulation System,” Proceeding of 2003 International Symposium On Micromechatronics and Human Science, pp. 281-285, 2003. 8. Ingo Steingoetter and Henning Fouckhardt, “Deep Fused Silica Wet Etching Using an Au-Free and Stress-Reduced Sputter-Deposited Cr Hard Mask,” Journal of Micromechanics and Microengineering, Vol. 15, pp. 2130-2135, 2005. 9. R. E. Hampy, F. G. Yost, and F. P. Ganyard, “Interfacial Behavior of Cr-Au Films in the 423-573-K Temperature Range,” Journal of Vacuum Science and Technology, Vol. 16, Issue 1, pp. 25-30, 1979. 10. Golnaz Bassiri, “Diffusion Effect of Intermetallic Layers on Adhesion and Mechanical Properties of Electrical Contacts,” Fundamentals of Nanotechnology, Gabor L. Hornyak, Gabor Louis Hornyak, H. F. Tibbals, Taylor and Francis, pp. 1-10, 2009. 11. R. E. Thomas and G. A. Haas, “Diffusion Measurements in Thin Films Utilizing Work Function Changes: Cr into Au,” Journal of Applied Physics, Vol. 43, No. 12, pp. 4099-4907, 1972. 12. Yan Huang, Hong Qiu, Fengping Wang, Liqing Pan, Yue Tian, Ping Wu, ”Effect of Annealing on the Characteristics of Au/Cr Bilayer Films Grown on Glass,” Vacuum, Vol. 71, Issue 4, pp. 523-528, 2003. 13. Nima Ghalichechian, Alireza Modafe, and Reza Ghodssi, “Integration of Benzocyclobutene Polymers and Silicon Micromachined Structures Using Anisotropic Wet Etching,” Journal of Vacuum Science and Technology B, Vol. 22, Issue 5, pp. 2439-2447, 2004. 14. Chee Wee Tan, Jianmin Miao, “Optimization of Sputtered Cr/Au Thin Film for Diaphragm-Based Mems Applications,” Thin Solid Films, Vol. 517, pp. 4921-4925, 2009. 15. Maria Calleja, Karin Johnson, Warwick J. Belcher, and Jonathan W. Steed, “Oxonium Ions from Aqua Regia: Isolation by Hydrogen Bonding to Crown Ethers,” Inorganic Chemistry, Vol. 40, pp. 4978-4985, 2001. 16. Francis E. H. Tay, Ciprian Iliescu, Ji Jing, “Defect-Free Wet Etching Through Pyrex Glass Using Cr/Au Mask,” Microsystem Technologies, Vol. 12, pp. 935-939, 2006. 17. Minqiang Bu, Tracy Melvin, Graham J. Ensell, James S. Wilkinson, Alan G.R. Evans, “A New Masking Technology for Deep Glass Etching and Its Microfluidic Application,” Sensors and Actuators A, Vol. 115, pp. 476-482, 2004. 18. L. S. Weinman, T. W. Orent and T. S. Liu, “Auger Study of Cr/Au Thin Films Deposited on Alumina and Sapphire,” Thin Solid Films, Vol. 72, pp. 143-149, 1980. 19. Charles A. Goss, Deborah H. Charych, and Marcin Majda, “Application of (3-Mercaptopropyl)trimethoxysliane as a Molecular Adhesive in the Fabrication of Vapor-Deposited Gold Electrodes on Glass Substrates,” Analytical Chemistry, Vol. 63, No. 1, pp. 85-88, 1991. 20. Jianbiao Pan, Robert M. Pafchek, Frank F. Judd, Jason Baxter, “Effect of Chromium-Gold and Titanium-Titanium Nitride-Platinum-Gold Metallization on Wire/Ribbon Bondability,” IEEE Transactions on Advanced Packaging, Vol. 29, Issue 4, pp.707-713, 2006. 21. Xu Jun, Li Xin, Ai Hong, “Study on High-Performance Temperature Meter Using Quartz Tuning-Fork Temperature Sensor,” Intelligent Control and Automation, Vol. 4, pp. 3701-3704, 2004. 22. K. Kolari, “Deep Plasma Etching of Glass with a Silicon Shadow Mask,” Sensors and Actuators A, Vol. 141, pp. 677–684, 2008. 23. Cheng Luo, Liwei Lin, “The Application of Nanosecond-Pulsed Laser Welding Technology in MEMS Packaging with a Shadow Mask,” Sensors and Actuators A, Vol. 97-98, pp. 398-404, 2002. 24. Sungkyu Lee, “Fabrication of an Array of Surface Mount Device 32.768kHz Quartz Tuning Fork-Type Crystals: Photolithography and Selective Etching of an Array of Quartz Tuning Fork Resonators with Subsequent Photoresist Spray Coating,” Vacuum, Vol. 65, pp. 161-168, 2002. 25. T. Yatsui, K. Hirata, W. Nomura, Y. Tabata, “Realization of an Ultra-Flat Silica Surface with Angstrom-Scale Average Roughness Using Nonadiabatic Optical Near-Field Etching,” Applied Physics B: Lasers and Optics, Vol. 93, pp.55-57, 2008. 26. A.Zalar, S. Hofmann, “Influence of Ion Energy, Incidence Angle and Surface Roughness on Depth Resolution in AES Sputter Profiling of Multilayer Cr/Ni Thin films,” Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 18, pp. 655-658, 1987. 27. J.Takadoum, h. Houmid Bennani, “Influence of Substrate Roughness and Coating Thickness in Adhesion, Friction and Wear of TiN Films,” Surface and Coatings Technology, Vol. 96, pp. 272-282, 1997. 28. David N. Ruzic, “The Effects of Surface Roughness Characterized by Fractal Geometry on Sputtering,” Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 47, pp. 118-125, 1990. 29. M. Kustner, W. Eckstein , V. Dose, J. Roth, “The Influence of Surface Roughness on the Angular Dependence of the Sputter Yield,” Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol.145, pp. 320-331, 1998. | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/16020 | - |
| dc.description.abstract | 在石英振盪器中含有一細小的石英音叉，石英其擁有準確的振動頻率32768赫茲，本篇論文中主要是要完成此石英音叉外型的製作。首先要設計製作出一套穩定的溫度控制環境，以便於每次蝕刻都可以得到穩定的結果。
接著研究出石英在各角度方向經由不同配方以及不同溫度條件下所蝕刻出來的外觀，觀察石英經過氫氟酸蝕刻後，其各方向的蝕刻速率以及外型輪廓，以及石英其隨著時間蝕刻時的外型變化。 得到石英蝕刻的速率後，接著開始音叉的製作，而由於市面上並無法購買到合乎尺寸厚度的晶片，因此設計出一套晶片薄化的製程，以便於製作石英音叉。 最後發現到由於表面粗糙度的問題，以至於鉻金薄膜無法在時間內抵擋住氫氟酸蝕刻而剝落，導致實驗失敗。因此便研究，經過研磨後的晶片，其本身要拋光至何種粗糙度下，才能夠使得所鍍的薄膜能夠在蝕刻時間內抵擋住氫氟酸的侵蝕。 | zh_TW |
| dc.description.abstract | In the quartz resonator, there is a small quartz tuning fork. The quartz has accurate vibration frequency of 32,768 Hz. This paper is mainly to complete the production of the quartz tuning fork. We build an environment with stable temperature, so as to get stable results in each etching test.
Then we come up with the appearance of quartz in each angle direction through the different formulations and different temperature conditions. Besides, we will etched quartz with hydrofluoric acid and observe the etching rate of the quartz, the shape of quartz, and appearance changes of quartz through the etching time. After we get the quartz etching rate, we start to produce the tuning fork. Because we can’t purchase the fit size of the thickness of the wafer in the market, we designed a wafer thinning process for the production of quartz tuning fork. Finally we found the problem is the surface roughness which may cause Cr-Au films unable to withstand hydrofluoric acid etching in time, so the films peel off, and the research is fail. Therefore, we find a technique of polish the quartz. We know to which degree of roughness should we polish the quartz, and it will be able to make the thin-film to resist the erosion of hydrofluoric acid etching. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-07T17:58:18Z (GMT). No. of bitstreams: 1 ntu-101-R98522533-1.pdf: 3149347 bytes, checksum: 75bf926a2663bd9e213aa6240b5ed750 (MD5) Previous issue date: 2012 | en |
| dc.description.tableofcontents | 目錄
摘要 i Abstract iv 目錄 v 第一章 緒論 1 1.1 前言 1 1.2 文獻回顧 3 1.3 本文目的及內容 6 第二章 探討石英非等向性蝕刻特性之準備工作 8 2.1 石英的幾何晶體結構 8 2.2 蝕刻斷面角度之定義 8 2.3 蝕刻環境之製作與維持 9 2.4 蝕刻斷面之光罩設計 10 第三章 石英非等向性之蝕刻特性 12 3.1 蝕刻不同角度斷面之製程規劃 12 3.2 蝕刻不同角度斷面之實驗結果 15 3.3 雙面蝕刻0度與90度角之製程規劃 16 3.4 石英雙面蝕刻之歷時變化 18 3.5 蝕刻液比例微調之蝕刻變化 19 第四章 石英音叉製作 20 4.1 石英音叉光罩設計 20 4.2 石英音叉製程 21 4.3 石英音叉蝕刻實驗結果 25 4.4 石英音叉蝕刻實驗問題討論 25 第五章 表面粗糙度對鉻金薄膜保護能力之影響 28 5.1 研究動機 28 5.2 實驗規劃 28 5.3 實驗流程 28 5.4 實驗結果 31 第六章 結論與建議 32 參考文獻 33 附表 37 表3.2-1 HF:NH4F=2:3 T=55℃之角度與蝕刻速率對照表 37 表3.2-2 HF:NH4F=2:3 T=80℃之角度與蝕刻速率對照表 38 表5.4-1 粗糙度值對應的蝕刻抵擋時間 38 附圖 39 圖1.2-1 (a)石英四面體結構(b)α石英的XY平面(c)右手螺旋α-石英[6] 39 圖1.2-2 蝕刻速率與比例以及角度對照圖[6] 39 圖2.1-1 蝕刻溝槽寬度對於顯露出的斷面結構[5] 40 圖2.2-1 蝕刻溝槽β角之定義 40 圖2.2-2 蝕刻斷面幾何參數之定義 41 圖2.3-1 保溫槽 41 圖2.3-2 蝕刻設備 42 圖2.3-3 晶片座 42 圖2.4-1 角度測試之光罩(光罩一) 43 圖2.4-2 單一切塊之角度標記 43 圖2.4-3 大平邊之三角形形狀設計 44 圖2.4-4 對準印記之框框十字 44 圖2.4-5 對準印記製作之光罩圖(光罩二) 44 圖2.4-6 0度與90度之光罩圖(光罩三) 45 圖2.4-7 0度與90度單一切片之設計圖 45 圖3.1-1 單面蝕刻製程步驟 46 圖3.2-1 HF:NH4F=2:3 T=55℃ 48 圖3.2-2 HF:NH4F=2:3 T=55℃側壁與縱向蝕刻整理圖 49 圖3.2-3 HF:NH4F=2:3 T=80℃ 50 圖3.2-4 HF:NH4F=2:3 T=80℃側向與縱向蝕刻速率圖 51 圖3.2-5 HF:NH4F=3:2 T=55℃ 52 圖3.2-6 HF:NH4F=3:2 T=80℃ 54 圖3.3-1 製程步驟 56 圖3.4-1 HF:NH4F=2:3,T=55℃,β=0°歷時變化 60 圖3.4-2 HF:NH4F=2:3,T=55℃,β=90°歷時變化 68 圖3.4-3 HF:NH4F=2:3,T=80℃,β=0°歷時變化 76 圖3.4-4 HF:NH4F=2:3,T=80℃,β=90°歷時變化 79 圖3.5-1 HF:NH4F=1.5:3.5、80℃、β=0° 82 圖3.5-2 HF:NH4F=1.6:3.4、80℃、β=0° 82 圖3.5-3 HF:NH4F=1.7:3.3、80℃、β=0° 82 圖3.5-4 HF:NH4F=1.8:3.2、80℃、β=0° 83 圖3.5-5 HF:NH4F=1.9:3.1、80℃、β=0° 83 圖3.5-6 HF:NH4F=2.1:2.9、80℃、β=0° 83 圖3.5-7 HF:NH4F=2.2:2.8、80℃、β=0° 84 圖3.5-8 HF:NH4F=2.3:2.7、80℃、β=0 84 圖3.5-9 HF:NH4F=1.5:3.5、80℃、β=90° 84 圖3.5-10 HF:NH4F=1.6:3.4、80℃、β=90° 85 圖3.5-11 HF:NH4F=1.7:3.3、80℃、β=90° 85 圖3.5-12 HF:NH4F=1.8:3.2、80℃、β=90° 85 圖3.5-13 HF:NH4F=1.9:3.1、80℃、β=90° 86 圖3.5-14 HF:NH4F=2.1:2.9、80℃、β=90° 86 圖3.5-15 HF:NH4F=2.2:2.8、80℃、β=90° 86 圖3.5-16 HF:NH4F=2.3:2.7、80℃、β=90° 87 圖4.1-1 音叉尺寸 88 圖4.1-2 未蝕刻前溝槽寬度 88 圖4.1-3 蝕刻完後溝槽寬度 88 圖4.1-4 加進側蝕刻後的音叉修正尺寸 89 圖4.1-5 單一蝕刻晶片尺寸 89 圖4.1-6 輔助樑結構 89 圖4.1-7 音叉光罩全圖 90 圖4.1-8 音叉光罩對準光罩 90 圖4.2-1 石英音叉製程步驟 91 圖4.3-1 未蝕刻之石英音叉 96 圖4.3-2 蝕刻完成之石英音叉 96 圖4.3-3 去完金鉻的石英音叉全貌 97 圖4.3-4 音叉局部立體放大圖 98 圖4.3-5 55℃音叉樑寬(左圖為蝕刻時間1:40右圖為1:50) 100 圖4.3-6 55℃音叉樑寬加側壁寬度 (左圖為蝕刻時間1:40右圖為1:50) 100 圖4.3-7 音叉斷面模擬圖 101 圖4.3-8 80℃環境下蝕刻35分鐘 101 圖4.3-8 音叉輔助樑結構 102 圖4.4-1 原拋光面鍍膜後的表面狀況 102 圖4.4-2 研磨面鍍膜後的表面狀況 103 圖5.3 粗糙度研究製程規劃圖 104 圖5.4-1 不同粗糙度表面鍍膜光澤 107 圖5.4-2 顯微鏡下各粗糙度表面狀況 108 圖5.4-3 各粗糙度蝕刻過程表面變化照片 110 圖5.4-4 粗糙度與蝕刻抵擋時間關係圖 113 | |
| dc.language.iso | zh-TW | |
| dc.subject | 石英音叉 | zh_TW |
| dc.subject | Quartz Tuning Fork | en |
| dc.title | 石英音叉製程之研究 | zh_TW |
| dc.title | The Research of the Quartz Tuning Fork
Manufacturing Processes | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 100-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 張家歐(Chia-Ou Chang),莊嘉楊(Jia-Yang Juang) | |
| dc.subject.keyword | 石英音叉, | zh_TW |
| dc.subject.keyword | Quartz Tuning Fork, | en |
| dc.relation.page | 113 | |
| dc.rights.note | 未授權 | |
| dc.date.accepted | 2012-08-10 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 機械工程學研究所 | zh_TW |
| 顯示於系所單位： | 機械工程學系 | |
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