請用此 Handle URI 來引用此文件：
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/15990完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 管傑雄(Chieh-Hsiung Kuan) | |
| dc.contributor.author | Yao-Hong You | en |
| dc.contributor.author | 游耀鴻 | zh_TW |
| dc.date.accessioned | 2021-06-07T17:57:23Z | - |
| dc.date.copyright | 2012-08-28 | |
| dc.date.issued | 2012 | |
| dc.date.submitted | 2012-08-13 | |
| dc.identifier.citation | [1]T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening”, Appl. Phys. Lett. vol. 84, pp. 855-857, Apr. 2004.
[2]M. Y. Hsieh, C. Y. Wang, L. Y. Chen, T. P. Lin, M. Y. Ke, Y. W. Cheng, Y. C. Yu, C. P. Chen, D. M. Yeh, C. F. Lu, C. F. Huang, C. C. Yang, and J. J. Huang, 'Improvement of External extraction efficiency in GaN-based LEDs by SiO2 nanosphere lithography,' IEEE Electron Device Lett. 29, 658 (2009). [3]T. S. Kim, S. M. Kim, Y. H. Jang, and G. Y. Jung, “Increase of light extraction from GaN based light emitting diodes incorporating patterned structure by colloidal lithography”, Appl. Phys. Lett., vol. 91, no. 17, pp. 1114-1116, (2007). [4]C. H. Liu, R. W. Chuang, S. J. Chang, Y. K. Su, L. W. Wu, and C. C. Lin, “Improved light output power of InGaN/GaN MQW LEDs by lower temperature p-GaN rough surface,” Mater. Sci. Eng. B, vol. 112, no. 1, pp. 10–13, Sep. 2004. [5]C. Huh, K. S. Lee, E. J. Kang, and S. J. Park, “Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p-GaN surface,” J. Appl. Phys., vol. 93, no. 11, pp. 9383–9385, Jun. 2003. [6]H. W. Huang, J. T. Chu, C. C. Kao, T. H. Hseuh, T. C. Lu, H. C. Kuo, S. C. Wang, and C. C. Yu, “Enhanced light output of an InGaN/GaN light emitting diode with a nano-roughened p-GaN surface,” Nanotechnology, vol. 16, no. 9, pp. 1844–1848, Sep. 2005. [7]Y. N. Oder, K. H. Kim, J. Y. Lin, and H. X. Jiang, 'III-nitride blue and ultraviolet photonic crystal light emitting diodes,' Appl. Phys. Lett. 84, 466 (2004). [8]J. J. Wierer, A. David and M. M. Megens, “III-nitride photonic-crystal light-emitting diodes with high extraction efficiency,” Nature Photon., vol. 3, pp. 163–169, 2009. [9]Y. N. Oder, K. H. Kim, J. Y. Lin, and H. X. Jiang, “III-nitride photonic crystals,” Appl. Phys. Lett., vol. 83, pp. 1231-1233, 2003. [10]Z. S. Zhang, B. Zhang, J. Xu, K. Xu, Z. J. Yang, Z. X. Qin, T. J. Yu, and D. P. Yu, “Effects of symmetry of GaN-based two-dimensional photonic crystal with quasicrystal lattices on enhancement of surface light extraction,” Appl. Phys. Lett., vol. 88, 171103, 2006. [11]Lu Chena and A. V. Nurmikko, “Fabrication and performance of efficient blue light emitting III-nitride photonic crystals”, Appl. Phys. Lett., 85, 3663 (2004) [12]Y. Kawakami, Y. Narukawa, K. Omea, SG. Fujita, and S. Nakamura, “Dimensionality of excitons in InGaN-based light emitting devices”, Phys. Stat. Sol., Vol. 178, No. 1, pp. 331-336, (2000). [13]H. Benisty, H. De Neve, C. Weisbuch, Impact of planar microcavity effects on light extraction___Part I: Basic concepts and analytical trends, IEEE Journal of Quantum Electronics, 34(9), p.1612-1631 (1998) [14]Sze, S.M., Physics of Semiconductor Devices, Wiley, New York, 2nd ed., 1981 [15]E. Fred Schubert, Light-Emitting Diodes 2ed edition, New York, Cambridge University Press,2006, ch5 pp.92 [16]PerkinElmer Incoporated (http://www.perkinelmer.com/) [17]陳建中，用碳氟聚合物作為濕蝕刻阻擋層製作鋸齒狀矽光柵結構與其FTIR與拉曼光譜量測，國立台灣大學碩士論文，2009年6月 [18]H. M. Chen, C. H. Kuan, Y. W. Suen, G. L. Luo, Y. P. Lai, F. M. Wang, and S. T. Chen,, “Thermally induced morphology evolution of pit-patterned Si substrate and its effect on nucleation properties of Ge dots,” Nanotechnology, 015303, 23, 2012 [19]李承翰，以銀光柵和金光柵模擬與驗證拉曼增強效應，國立台灣大學碩士論文，2010年6月 [20]K. Brakora, C. Barth, K. Sarabandi, “A plane-wave expansion method for analyzing propagation in 3D periodic ceramic structures”, Proceedings of the Antennas and Propagation Society International Symposium, 2005 IEEE, Vol. 2B, pp 192- 195. [21]The MathWorks Incoporated (http://www.mathworks.com/products/matlab/) [22]David K. Cheng, “Field and Wave Electromagnetic”, 2nd Edition, Addison Wesley Longman, Chapter 7, 1988 [23]Taiyo Nippon Sanso Incoporated (http://www.tn-sanso.co.jp/en/index.html) [24]Gerald B. Stringfellow, “Organometallic vapor-phase epitaxy: theory and practice,” Academic Press, Inc., 1989. [25]H. Tokunaga, A. Ubukata, Y. Yano, A. Yamaguchi, N. Akutsu, T. Yamasaki, K. Matsumoto, ” Effects of growth pressure on AlGaNand Mg-doped GaNgrown using multiwafer metal organic vapor phaseepitaxy system” J. Cryst. Growth 272, 3348 (2004). [26]Chen, J.J.H. Lin, S.J. Fang, T.Y. Chang, S.M. Krecinic, F. Lin, B.J., “Multiple electron beam maskless lithography for high-volume manufacturing,” VLSI Technol., Systems, and Applications, April 2009. [27]Elionix Incoporated (http://www.sts-elionix.com/) [28]J.D.Plummer, M.D. Deal, and P. B. Griffin, “Silicon VLSI Technology -Fundamentals, Practice and Modeling,” Prentice Hall, 2000. [29]T. H. P. Chang, 'Proximity Effect in Electron-Beam Lithography,' J. Vac. Sci. Technol., vol. 12, pp. 1271-1275, Nov. 1975. [30]FEI Company (http://www.fei.com/) [31]Ejder E. “Refractive index of GaN.” Physica Status Solidi A, vol.6, no.2, 16 Aug. 1971, pp.445-8. East Germany. | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/15990 | - |
| dc.description.abstract | 本篇論文係採用電子束微影搭配電感耦合式電漿蝕刻於氮化鎵系列發光二極體的表面P型氮化鎵上製作次波長光柵週期性結構，用以提升發光二極體的亮度。藉由高解析的聚焦離子束顯微鏡來確認製作完成的表面結構，並利用微觀光致激發螢光光譜量測由主動層發出藍光訊號強度。
本論文研究主題可區分為兩大部分。第一部分，製作一維次波長光柵週期性結構於發光二極體表面，並且使用改變雷射功率大小，校正雷射到達主動層之量，增加實驗之準確度。第二部分，製作二維次波長光柵週期性結構於發光二極體表面，其中包含了孔洞結構與柱狀結構。針對孔洞與柱狀結構之相對PL峰值強度，探討其差異性並且說明其物理意義。 | zh_TW |
| dc.description.abstract | In this dissertation, for improving the light extraction efficiency, electron-beam lithography and inductively plasma dry etching were used to achieve sub-wavelength grating-periodic structures with exact dimensions on the p-side of nitride-based LEDs with multiple quantum wells. The surface morphology of accomplished sub-wavelength grating-periodic structures was re-examined with the instrument of FEI Dual-Beam NOVA 600i Focused Ion Beam, and the related blue light emitting from active region was measured by micro-photoluminescence (μ-PL) system.
The main focus of the dissertation can be divided into two parts. First, the one-dimensional (1D) sub-wavelength grating-periodic structures were demonstrated. In order to accomplish the accuracy of the measured data, a method of excitation power dependent μ-PL measurement was introduced subsequently. Second, we showed the two-dimensional (2D) sub-wavelength grating-periodic structures, including hole and pillar structures. According to the differences between the relative PL peak intensity of hole and pillar structures, we can explore the physical mechanism of light extraction of nitride-based LEDs. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-07T17:57:23Z (GMT). No. of bitstreams: 1 ntu-101-R99943059-1.pdf: 4757542 bytes, checksum: f87c9c8aada2c6a89997f43fe4e41ff1 (MD5) Previous issue date: 2012 | en |
| dc.description.tableofcontents | 致謝 I
摘要 II Abstract III 目 錄 IV 圖 表 索 引 VI 第一章 簡介 1 1-1 研究動機 1 1-2 文獻回顧與探討 1 1-3 章節概要 2 第二章 光萃取率理論與光柵模擬技術 3 2-1 光萃取率理論 3 2-1-1材料吸收(Absorption of Material) 3 2-1-2全反射角損耗(Critical Angle Loss) 4 2-1-3菲涅爾損失(Fresnel Loss) 5 2-2 光柵模擬技術 6 第三章 系統化實驗設計與實驗樣品製備 9 3-1 系統化實驗設計 9 3-2 實驗樣品製備 10 3-2-1 有機金屬氣相沉積(MOCVD) 10 3-2-2 電子束微影技術(E-beam Lithography) 13 3-2-3 電感耦合式電漿離子蝕刻(ICP-RIE) 15 3-2-4 實驗製作流程 16 3-2-5 聚焦離子束顯微鏡(Focus Ion Beam)與Micro-PL系統 21 第四章 實驗量測結果與討論 23 4-1 一維週期性光柵結構 23 4-1-1 系統化實驗設計流程 23 4-1-2 入射光實驗校正 30 4-2 二維週期性光柵結構 37 4-2-1 孔洞週期性結構 37 4-2-2 柱狀週期性結構 44 4-2-3 孔洞與柱狀結構比較 51 4-3 最佳結構之物理意義 52 第五章 總結 54 5-1 總結論 54 5-2 未來可研究方向 55 參考文獻 56 | |
| dc.language.iso | zh-TW | |
| dc.subject | 聚焦離子束顯微鏡 | zh_TW |
| dc.subject | 發光二極體 | zh_TW |
| dc.subject | 氮化鎵 | zh_TW |
| dc.subject | 光萃取率 | zh_TW |
| dc.subject | 次波長光柵 | zh_TW |
| dc.subject | 電子束微影技術 | zh_TW |
| dc.subject | 電感耦合式電漿離子蝕刻 | zh_TW |
| dc.subject | Light-emitting Diodes(LEDs) | en |
| dc.subject | E-beam Lithography | en |
| dc.subject | Subwavelength Grating | en |
| dc.subject | Light Extraction Efficiency | en |
| dc.subject | Gallium Nitride(GaN) | en |
| dc.title | 利用電子束微影技術於氮化鎵表面製作次波長週期結構增加發光二極體光萃取率 | zh_TW |
| dc.title | Increased Light Extraction Efficiency of GaN-Based Light-Emitting Diodes Using Subwavelength Period Structures with E-Beam Lithography | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 100-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 孫建文(Kien-Wen Sun),孫允武(Yuen-Wuu Suen) | |
| dc.subject.keyword | 發光二極體,氮化鎵,光萃取率,次波長光柵,電子束微影技術,電感耦合式電漿離子蝕刻,聚焦離子束顯微鏡, | zh_TW |
| dc.subject.keyword | Light-emitting Diodes(LEDs),Gallium Nitride(GaN),Light Extraction Efficiency,Subwavelength Grating,E-beam Lithography, | en |
| dc.relation.page | 60 | |
| dc.rights.note | 未授權 | |
| dc.date.accepted | 2012-08-14 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
| 顯示於系所單位： | 電子工程學研究所 | |
文件中的檔案：
| 檔案 | 大小 | 格式 | |
|---|---|---|---|
| ntu-101-1.pdf 未授權公開取用 | 4.65 MB | Adobe PDF |
系統中的文件，除了特別指名其著作權條款之外，均受到著作權保護，並且保留所有的權利。