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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 劉致為 | |
| dc.contributor.author | Ying-Jhe Yang | en |
| dc.contributor.author | 楊英哲 | zh_TW |
| dc.date.accessioned | 2021-06-07T17:56:57Z | - |
| dc.date.copyright | 2012-08-20 | |
| dc.date.issued | 2012 | |
| dc.date.submitted | 2012-08-14 | |
| dc.identifier.citation | [2-1] N. Yasutake, K. Ohuchi, M. Fujiwara, K. Adachi, A. Hokazono, K. Kojima, N. Aoki,H. Suto, T. Watanabe, T. Morooka, H. Mizuno, S. Magoshi, T. Shimizu, S. Mori, H.
Oguma, T. Sasaki, M. Ohmura, K. Miyano, H. Yamada, H. Tomita, D. Matsushita, K. Muraoka, S. Inaba, M. Takayanagi, K. Ishimaru, and H. Ishiuchi, “A hp22 nm node low operating power (LOP) technology with sub-10 nm gate length planar bulk CMOS devices,” in Symp. VLSI Tech. Dig., pp. 84–85, 2004. [2-2] M. Lundstrom, “Device physics at the scaling limit: What matters?” in IEDM Tech. Dig., pp. 789–792, 2003. [2-3] C. Jungemann and B. Meinerzhagen, “Maximum drive current scaling properties of strained-Si NMOS in the deca-nanometer regime,” in IEDM Tech. Dig., pp. 191–194, 2003. [2-4] A. G. O’Neill and A. D. Antoniadis, “Deep submicron CMOS based on silicon germanium technology,” IEEE Trans. Electron Devices, vol. 43, pp. 911–918, 1996. [2-5] R. People, “Physics and applications of GexSi1−x/Si strained layer heterostructures,” IEEE J. Quantum Electron, vol. 22, pp. 1696–1710, 1986. [2-6] J. J. Welser, J. L. Hoyt, and J. F. Gibbons, “Electron mobility enhancement in strained-Si n-type metal-oxide-semiconductor field-effect transistors,” IEEE Electron Device Lett., vol. 15, pp. 100–102, 1994. [2-7] C. K. Maiti, L. K. Bera, and S. Chattopadhyay, “Strained-Si heterostructure field effect transistors,” Semicond. Sci. Technol., vol. 13, No. 11, pp. 1225–1246, 1998. [2-8] D. J. Paul, “Si/SiGe heterostructures: From material and physics to devices and circuits,” Semicond. Sci. Technol., vol. 19, No. 10, pp. R75–R108, 2004. [2-9] C. W. Liu and L. J. Chen, “SiGe/Si heterostructures,” in Encyclopedia of Nanoscience and Nanotechnology, H.S. Nalwa, Ed. Stevenson Ranch, CA: American Scientific, 2004. [2-10] C. W. Liu, S. Maikap, and C.-Y. Yu, “Mobility-enhancement Technologies,” IEEE Circuit and Device Magazine, vol. 21, No. 3, pp. 21-36, 2005. [3-1] Siddhartha Dhar, Hans Kosina, Vassil Palankovski, Stephan Enzo Ungersboeck, and Siegfried Selberherr, “Electron mobility model for strained-Si devices,” IEEE Trans. Electron Devices, vol. 52, No. 4, pp. 527-533, 2005. [3-2] L.-J. Huang, J. Chu, S. Goma, C. Emic, S. Koester, D. Canaperi, P. Mooney, S. Cordes, J. Speidell, R. Anderson, and H. Wong, “Carrier mobility enhancement in strained-Si-on-insulator fabricated by wafer bonding,” in VLSI Symp. Tech. Dig., pp. 57–58, 2001. [3-3] K. Rim, J. Chu, H. Chen, K. Jenkins, T. Kanarsky, K. Lee, A. Mocuta, H. Zhu, R. Roy, J. Newbury, J. Ott, K. Petrarca, P. Mooney, D. Lacey, S. Koester, K. Chan, D. Boyd, M. Ieong, and H. Wong, “Characteristics and device design of sub-100 nm strained-Si N- and PMOSFETs,” in VLSI Symp. Tech. Dig., pp. 98–99, 2002. [3-4] N. Sugii, D. Hisamoto, K. Washio, N. Yokoyama, and S. Kimura, “Enhanced performance of strained-Si MOSFETs on CMP SiGe virtual substrate,” in IEDM Tech. Dig., pp. 737–740, 2001. [3-5] T. Mizuno, S. Takagi, N. Sugiyama, H. Satake, A. Kurobe, and A. Triumi, “Electron and hole mobility enhancement in strained-Si MOSFET’s on SiGe-on-insulator substrates fabricated by SIMOX technology,” IEEE Electron Device Lett., vol. 21, No. 5, pp. 230–232, 2000. [3-6] C. Herring and E. Vogt, “Transport and deformation-potential theory for many-valley semiconductors with anisotropic scattering,” Phys. Rev., vol. 101, No. 3, pp. 944-961, 1956. [3-7] I. Balslev, “Influence of uniaxial stress on the indirect absorption edge in silicon and germanium,” Phys. Rev., vol. 143, pp. 636–647, 1966. [3-8] J. J. Wortman and R. A. Evans, ”Young’s modulus, shear modulus, and Poisson’s ratio in silicon and germanium,” J. Appl. Phys., vol. 36, No. 1, pp. 153-156, 1965. [3-9] A. Rahman, M. S. Lundstrom, and A. W. Ghosh, “Generalized effective-mass approach for n-type metal-oxide-semiconductor field-effect transistors on arbitrarily oriented wafers,” J. Appl. Phys., vol. 97, 053702, 2005. [3-10] S. Takagi, J. L. Hoyt, J. J. Welser, and J. F. Gibbons, “Comparative study of phonon-limited mobility of two-dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field-effect transistors,” J. Appl. Phys., vol. 80, No. 3, pp, 1567-1577, 1996. [3-11] R. Kotlyar, D. Giles, P. Matagne, B. Obradovic, L. Shifren, M. Stettler, and E. Wang, “Inversion mobility and gate leakage in high-k/metal gate MOSFETs,” in IEDM Tech. Dig., pp. 391–394, 2004. [4-1] K. Ota, K. Sugihara, H. Sayama, T. Uchida, H. Oda, T. Eimori, H. Morimoto, and Y. Inoue, “Novel locally strained channel technique for high performance 55nm CMOS,” in IEDM Tech. Dig., pp. 27-30, 2002. [4-2] Hong-Nien Lin, Hung-Wei Chen, Chih-Hsin Ko, Chung-Hu Ge, Horng-Chih Lin, Tiao-Yuan Huang, and Wen-Chin Lee, “Channel backscattering characteristics of strained PMOSFETs with embedded SiGe source/drain,” in IEDM Tech. Dig., pp. 141-144, 2005. [4-3] K. Uchida, T. Krishnamohan, K. C. Saraswat, and Y. Nishi, “Physical mechanisms of electron mobility enhancement in uniaxial stressed MOSFETs and impact of uniaxial stress engineering in ballistic regime,” in IEDM Tech. Dig., pp. 129-132, 2005. [5-1] C. C. Yeo, B. J. Cho, F. Gao, S. J.Lee, M. H. Lee, C.-Y. Yu, C. W. Liu, L. J. Tang, and T. W. Lee, “Electron mobility enhancement using ultrathin pure Ge on Si substrate,” IEEE Electron Device Lett., vol. 26, No. 10, pp. 761-763, 2005. [5-2] M. L. Lee and E. A. Fitzgerald, “Strained Si/strained Ge dual-channel heterostructures on relaxed Si0.5Ge0.5 for symmetric mobility p-type and n-type metal-oxide-semiconductor field-effect transistors,” Appl. Phys. Lett., vol. 83, No. 20, pp. 4202-4204, 2003. [5-3] S. Maikap, C.-Y. Yu, S.-R. Jan, M. H. Lee, and C. W. Liu, “Mechanically Strained Strained-Si NMOSFETs,” IEEE Elec. Device Lett., vol. 25, No. 1, pp. 40-42, 2004. [5-4] Siddhartha Dhar, Hans Kosina, Vassil Palankovski, Stephan Enzo Ungersboeck, and Siegfried Selberherr, “Electron mobility model for strained-Si devices,” IEEE Trans. Elec. Dev., vol. 52, No. 4, pp. 527-533, 2005. [5-5] H. Irie, K. Kita, K. Kyuno, and A. Toriumi, “In-plane mobility anisotropy and universality under uni-axial strains in n- and p-MOS inversion layers on (100), (110), and (111) Si,” in IEDM Tech. Dig., pp. 225-228, 2004. [5-6] K. Uchida, T. Krishnamohan, K. C. Saraswat, and Y. Nishi, “Physical mechanisms of electron mobility enhancement in uniaxial stressed MOSFETs and impact of uniaxial stress engineering in ballistic regime,” in IEDM Tech. Dig., pp. 129-132, 2005. [5-7] F. Stern and W. E. Howard, “Properties of semiconductor surface inversion layers in the electric quantum limit,” Phys. Rev., vol. 163, No.3, pp. 816-835, 1967. [5-8] A. Rahman, M. S. Lundstrom, and A. W. Ghosh, “Generalized effective-mass approach for n-type metal-oxide-semiconductor field-effect transistors on arbitrarily oriented wafers,” J. Appl. Phys., vol. 97, 053702, 2005. [5-9] J. J. Wortman and R. A. Evans, ”Young’s modulus, shear modulus, and Poisson’s ratio in silicon and germanium,” J. Appl. Phys., vol. 36, No. 1, pp. 153-156, 1965. [5-10] I. Balslev, “Influence of uniaxial stress on the indirect absorption edge in silicon and germanium,” Phys. Rev., vol.143, No. 2, pp. 636-647 1966. [5-11] M. V. Fischetti and S. E. Laux, “Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys,” J. Appl. Phys., vol. 80, pp. 2234-2252, 1996. [5-12] J. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, D. T. Danielson, S. Jongthammanurak, J. Michel, and L. C. Kimerling, “Deformation potential constants of biaxially tensile stressed Ge epitaxial films on Si(100),” Phys. Rev. B, vol. 70, 155309, 2004. [5-13] R. Kotlyar, D. Giles, P. Matagne, B. Obradovic, L. Shifren, M. Stettler, and E. Wang, “Inversion mobility and gate leakage in high-k/metal gate MOSFETs,” in IEDM Tech. Dig., pp. 391–394, 2004. [5-14] S. Takagi, J. L. Hoyt, J. J. Welser, and J. F. Gibbons, “Comparative study of phonon-limited mobility of two-dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field-effect transistors,” J. Appl. Phys., vol. 80, No. 3, pp, 1567-1577, 1996. [5-15] C. Jacoboni and L. Reggiani, “The Monte Carlo method for the solution of charge transport in semiconductors with application to covalent materials,” Rev. Mod. Phys., vol. 55, No. 3, pp. 645-705, 1983. [5-16] T. Low, M. F. Li, C. Shen, Y.-C. Yeo, Y. T. Hou, and C. Zhu, “Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semiconductor field-effect transistors,” Appl. Phys. Lett., vol. 85, No. 12, pp. 2402-2404, 2004. [5-17] B. Ghosh, X. Wang, X.-F. Fan, L. F. Register, and S. K. Banerjee, “Monte Carlo study of Germanium n- and p-MOSFETs,” IEEE Tran. Elec. Dev., vol. 52, No. 4, pp. 547-553, 2005. [5-18] C.-Y. Peng, F. Yuan, C.-Y. Yu, P.-S. Kuo, M. H. Lee, S. Maikap, C.-H. Hsu, and C. W. Liu, “Hole mobility enhancement of Si0.2Ge0.8 quantum well channel on Si,” Appl. Phys. Lett., vol. 90, 012114, 2007. [6-1] Antonio Luque, and Steven Hegedus, Handbook of Photovoltaic Science and Engineering, John Wiley & Sons, 2003. [6-2] M. Green M, Solar Cells: Operating Principles, Technology, and System Applications, Prentice Hall, 1982. [7-1] J. Tauc, in Abeles F, Ed, Optical Properties of Solids, pp. 277–313, North Holland, Amsterdam, 1972. [7-2] B. Chapman, Glow discharge processes, John Wiley & Sons, 1980. [7-3] W. Luft and Y. S. Tsuo, Hydrogenated amorphous silicon alloy deposition processes, Applied Physics Series. Marcel Dekker, Inc., 1993. [7-4] G. Bruno, P. Capezzuto and A. Madam, Plasma deposition of amorphous silicon-basel materials, Plasma-Materials Interactions. Academic Press, Boston, 1995. [7-5] T. Wittchen, H. C. Holstenberg, D. Hunerhoff, Z. J. Min and J. Metzdorf, “Solar cell calibration and characterization: Simplified DSR apparatus,” in Proc. 20th IEEE Photovoltaic Specialists Conf., pp. 1251-1257, 1988. [7-6] J. Metzdorf, “Calibration of solar cells. 1: The differential spectral responsivity method,” Appl. Optics, vol. 26, No. 9, pp. 1701-1708, 1987. [7-7] K. Yamamoto, A. Nakajima, M. Yoshimi, T. Sawada, S. Fukuda, T. Suezaki, M. Ichikawa, Y. Koi, M. Goto, T. Meguro, T. Matsuda, M. Kondo, T. Sasaki, and Y. Tawada, “A high efficiency thin film silicon solar cell and module,” Sol. Energy, vol. 77, pp. 939-949, 2004. [7-8] K. Lips, C. Boehme, and W. Fuhs, “Recombination in uc-Si:H pin solar cells,” J. Non-Cryst. Solids, vol. 338-340, pp. 702-705, 2004. [7-9] A. Sturiale, H. T. Li, J. K. Rath, R. E. I. Schropp, and F. A. Rubinelli, “Exploring dark current voltage characteristics of micromorph silicon tandem cells with computer simulations,” J. Appl. Phys., vol. 106, 014502, 2009. [7-10] T. Brammer, and H. Stiebig, “Defect density and recombination lifetime in microcrystalline silicon absorbers of highly efficient thin-film solar cells determined by numerical device simulations,” J. Appl. Phys., vol. 94, No. 2, pp. 1035-1042, 2003. [7-11] M. Tanaka, S. Okamoto, S. Tsuge, and S. Kiyama, “Development of HIT solar cells with more than 21% conversion efficiency and commercialization of highest performance hit modules,” in Proc. 3rd World Conference on Photovoltaic Energy Conversion (WCPEC '03), pp. 955–958, 2003. [7-12] T. Brammer, and H. Stiebig, “Applying analytical and numerical methods for the analysis of microcrystalline silicon solar cells,” Sol. Energy Mater. Sol. Cells, vol. 90, pp. 3021-3030, 2006. [7-13] R. Prado, G. Beobide, A. Marcaide, J. Goikoetxea, A. Aranzabe, “Development of multifunctional sol–gel coatings: Anti-reflection coatings with enhanced self-cleaning capacity,” Sol. Energy Mater. Sol. Cells, vol. 94, pp. 1081-1088, 2010. [8-1] S. Guha, in R. Street, Ed, Technology and Applications of Amorphous Silicon, pp. 252–305, Springer, Berlin, 1999. (Fig. 6.10 of this paper is a valuable compilation of power measurements for varying cell thicknesses and light-soaking histories.) [8-2] D. L. Staebler , and C. R. Wronski, “Reversible conductivity changes in discharge produced amorphous Si,” Appl. Phys. Lett., vol. 31, pp. 292-294, 1977. [8-3] Wenhui Dua, Xianbo Liao, Xinmin Cao , Xiesen Yang , Xunming Deng , and Kai Sun, “Light-induced changes in hydrogenated amorphous silicon solar cells deposited at the edge of crystallinity,” J. Non-Cryst. Solids, vol. 354, pp. 2155-2159, 2008. [8-4] S. Guha, K. L. Narasimhan, and S. M. Pietruszko, “On light‐induced effect in amorphous hydrogenated silicon,” J. Appl. Phys., vol. 52, pp. 859-860, 1981. [8-5] R. W. Collins, A. S. Ferlauto, G. M. Ferreira, Chi Chen, Joohyun Koh, R.J. Koval, Yeeheng Lee, J. M. Pearce, and C. R. Wronski, “Evolution of microstructure and phase in amorphous, protocrystalline, and microcrystalline silicon studied by real time spectroscopic ellipsometry,” Sol. Energ. Mater. Sol. Cells, vol. pp. 143-180, 2003. [8-6] A. S. Ferlauto, R .J. Koval, C. R. Wronski, and R. W. Collins, “Extended phase diagrams for guiding plasma-enhanced chemical vapor deposition of silicon thin films for photovoltaics applications,” Appl. Phys. Lett., vol. 80, pp. 2666-2668, 2002. [8-7] A. Fontcuberta i Morral, and P. Roca i Cabarrocas, “Structure and hydrogen content of polymorphous silicon thin films studied by spectroscopic ellipsometry and nuclear measurements,” Phys. Rev. B, vol. 69, 125307, 2004. [8-8] Toshihiro Kamei, Paul Stradins, and Akihisa Matsuda, “Effects of embedded crystallites in amorphous silicon on light-induced defect creation,” Appl. Phys. Lett., vol. 74, pp. 1707-1709, 1999. | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/15975 | - |
| dc.description.abstract | 在本論文中，分為兩大主題，分別探討與金氧半電晶體及太陽能發電工業相關技術。其一為應變矽及應變鍺反轉層之電子遷移率計算；另一為非晶矽基太陽能電池的高效率開發與相關材料或元件特性分析。
第一部分：長久以來，互補式金氧半工業藉由提昇電晶體性能達到更大操作電流與更快操作速度來使元件面積不斷微縮。然而在元件不斷微縮到已接近物理極限的情況下，所需之製程複雜度及成本也隨之大幅增加。已知提昇閘極電容或載子遷移率皆可提高操作電流；其中，對通道施加應力(藉由不同晶格大小基板提供應力、製程中產生應力或於製作完成後外加機械應力等)來提昇載子遷移率已廣泛應用於先進奈米製程中。本論文中針對n通道矽金氧半電晶體在不同基板位向、不同通道方向施予各種不同應力造成之反轉層電子遷移率變化做深入探討，已瞭解各種情況下之差異，並找出做佳的基板、通道、應力條件，使達電子遷移率最大化。其次，由於鍺先天具有較矽高之遷移率，使用鍺或矽鍺通道亦為提昇遷移率的方法之一，本論文中亦針對n通道鍺金氧半電晶體在不同基板位向、不同通道方向施予各種不同應力造成之反轉層電子遷移率變化做深入探討最佳化條件。 第二部分：近年來由於空氣污染及地球暖化等問題，使再生能源產業蓬勃發展，盼能在未來取代以化石燃料發電，以使地球永續發展。在各種不同的再生能源中，太陽能電池以其發電時無污染性及幾乎全球皆可利用，而成為極具發展潛力的選項。傳統上佔主流之結晶矽太陽能電池雖較薄膜型有較高之效率，然而其提鍊多晶矽之高溫製程亦需使用大量能源，延長了其成品之能源回收時間；而需要以矽為基板使大面積模組製程較為不易。非晶矽基太陽能電池之吸收層仍以矽為原料，同樣不具毒性，且不需矽基板，又能以較低溫製程，故為薄膜型太陽能電池中最具商業發展價值之選項。然而其穩定效率仍和結晶矽型有一段差距，且在製作完成後照光數百小時內會有本質上的劣化造成效率損失。故在本論文中，乃針對非晶矽型太陽能電池之高效率開發(以非晶/微晶/微晶三層結構)及劣化率的下降做探討，以期提昇非晶矽基太陽能電池之競爭力，俾對地球永續發展有所助益。 | zh_TW |
| dc.description.abstract | In this dissertation, two important topics are investigated and discussed for MOSFET (metal-oxide-semiconductor field-effect transistor) and photovoltaic
technologies, respectively. One is the electron mobility calculation in the strained silicon or strained germanium inversion layers. The other is the performance improvement together with material and device characterization of amorphous silicon based solar cells. Part I: It is the goal for the CMOS (complementary metal-oxide-semiconductor) industry enabling large-scale decrease in chip area and improving transistor performance by scaling down the devices to give higher drive current and higher circuit speed. However, the device scaling down requires a complicated process improvement and high cost, especially when the approaching of the physical limits. Both the higher gate capacitance Cg and the higher carrier mobility μ can improve the drive current Id since Id ~ Cg∙μ. Thus, mobility enhancement offers an alternative way to further improve the drive current. Several various techniques such as substrate strain, process strain, and mechanical/package strain have been proposed to give strain into the silicon channel. In order to find out the optimal strain condition which gives highest electron mobility for silicon channels, the electron mobility in the silicon inversion layer is comprehensively studied for various substrate orientations, various channel directions, and various stress conditions. Furthermore, it was well known that bulk germanium (Ge) substrate offer 2x higher mobility for electrons and 4x higher mobility for holes as compared to Si. Thus, the strain induced electron mobility change in Ge channel inversion layer is also comprehensively studied. Part II: In recent years, the air pollution and global warming issues resulting from the mass consumption of fossil fuels have attracted more and more attention due to the aim for sustainability of the ecosystem on earth. The development of clean energy resources is thus an important challenge in these years. Among the wide variety of renewable energy, solar cells (also called photovoltaics, PV), which is pollution free in use and almost available everywhere in the world, is the most promising candidate. Although conventional crystalline silicon solar cells have higher efficiency, higher energy consumption during process and smaller substrate area give bottlenecks for this technique in the future from the ecological and economical point of view. Amorphous silicon based thin film solar cells, which can give large-scale applications and shorter energy pay-back time (EPBT), are the most commercially available thin film PV technology with abundant and non-toxic absorber material. However, the still limited stable efficiency has to be improved to compete with other PV technologies. In this dissertation, some material property and device structure are investigated to improve the initial and stable efficiency of a-Si based thin film solar cells. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-07T17:56:57Z (GMT). No. of bitstreams: 1 ntu-101-F93943058-1.pdf: 1824002 bytes, checksum: 66f9cd39b88b73c4960c28799edb58c6 (MD5) Previous issue date: 2012 | en |
| dc.description.tableofcontents | List of Tables XII
List of Figures XIII Chapter 1 Introduction 1 1.1 Motivation 1 1.2 Organization of the Dissertation 3 Chapter 2 Fundamentals of Strained-Silicon Technology 5 2.1 Introduction 5 2.2 Substrate Strain 6 2.3 Process Strain 8 2.4 Mechanical Strain 9 Chapter 3 Calculation of Electron Mobility in Strained-Silicon Inversion Layers 12 3.1 Introduction 12 3.2 Theoretical model derivation 12 3.3 Results and discussion 24 3.4 Summary 27 Chapter 4 Superior n-MOSFET Performance by Optimal Stress Design 36 4.1 Introduction 36 4.2 Experimental and simulation settings 36 4.3 Results and discussion 37 4.4 Summary 38 Chapter 5 Electron Mobility Enhancement in Strained-Ge n-Channel MOSFETs 46 5.1 Introduction 46 5.2 Theoretical model and parameters for calculation 46 5.3 Results and discussion 48 5.4 Summary 51 Chapter 6 Fundamentals of Photovoltaic Technology 58 6.1 Introduction 58 6.2 Types of solar cell 59 6.3 Properties of solar spectrum and operation principle of solar cells 60 Chapter 7 High Efficiency a-Si:H/μc-Si:H/μc-Si:H Triple Junction Solar Cells 66 7.1 Introduction 66 7.2 Experimental 66 7.2.1 Plasma-Enhanced Chemical Vapor Deposition 67 7.2.2 Solar Cell Current-Voltage Characterization 70 7.2.3 Quantum Efficiency Measurement 71 7.3 Tunneling junction adjustment 73 7.4 Microcrystalline silicon solar cells with heterojunction structure 73 7.5 Improvement of the Jsc by an anti-reflection layer 79 7.6 Summary 80 Chapter 8 Reduction of Light-Induced-Degradation in a-Si:H Solar Cells by Hydrogen Dilution 84 8.1 Introduction 84 8.2 Sensitivity of process parameters 85 8.3 Light soaking monitor and optimization for stable efficiency 89 8.4 Summary 90 Chapter 9 Conclusion and future work 97 9.1 Conclusion 97 9.2 Future Work 99 | |
| dc.language.iso | en | |
| dc.subject | 非晶矽基太陽能電池 | zh_TW |
| dc.subject | 應變矽 | zh_TW |
| dc.subject | 應變鍺 | zh_TW |
| dc.subject | 遷移率 | zh_TW |
| dc.subject | Strained-Si | en |
| dc.subject | Strained-Ge | en |
| dc.subject | Mobility | en |
| dc.subject | Amorphous silicon based thin film solar cells | en |
| dc.title | 應變矽/鍺反轉層電子遷移率計算與非晶矽基薄膜太陽能電池 | zh_TW |
| dc.title | Calculation of Electron Mobility in Strained-Si/Ge Inversion Layer and Amorphous Silicon Based Thin Film Solar Cells | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 100-2 | |
| dc.description.degree | 博士 | |
| dc.contributor.oralexamcommittee | 林中一,林楚軒,郭宇軒,江雨龍,張佳文 | |
| dc.subject.keyword | 應變矽,應變鍺,遷移率,非晶矽基太陽能電池, | zh_TW |
| dc.subject.keyword | Strained-Si,Strained-Ge,Mobility,Amorphous silicon based thin film solar cells, | en |
| dc.relation.page | 99 | |
| dc.rights.note | 未授權 | |
| dc.date.accepted | 2012-08-14 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
| 顯示於系所單位： | 電子工程學研究所 | |
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