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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 李佳翰 | zh_TW |
| dc.contributor.advisor | Jia-Han Li | en |
| dc.contributor.author | 田鈞 | zh_TW |
| dc.contributor.author | Chun Tian | en |
| dc.date.accessioned | 2026-03-18T16:07:58Z | - |
| dc.date.available | 2026-03-19 | - |
| dc.date.copyright | 2026-03-18 | - |
| dc.date.issued | 2025 | - |
| dc.date.submitted | 2025-12-01 | - |
| dc.identifier.citation | [1]S. Z. Chen, S. H. Sun, and S. L. Kang, "System Integration of Terrestrial Mobile Communication and Satellite Communication-The Trends, Challenges and Key Technologies in B5G and 6G," China Communications, vol. 17, no. 12, pp. 156- 171, Dec 2020. [Online]. Available: <Go to ISI>://WOS:000603305800012.
[2]L. W. Massengill, A. E. Baranski, D. O. Van Nort, J. Meng, and B. L. Bhuva, "Analysis of single-event effects in combinational logic - Simulation of the AM2901 bitslice processor," Ieee Transactions on Nuclear Science, vol. 47, no. 6, pp. 2609-2615, Dec 2000, doi: 10.1109/23.903816. [3]A. Chugg, A. Burnell, M. Moutrie, R. Jones, and R. Harboe-Sørensen, "Laser SEE sensitivity mapping of SRAM cells," IEEE Transactions on Nuclear Science, vol. 54, no. 6, pp. 2106-2112, 2007. [4]J. S. Melinger, S. Buchner, D. McMorrow, W. J. Stapor, T. R. Weatherford, and A. B. Campbell, "Critical-Evaluation of The Pulsed-Laser Method for Single Event Effects Testing and Fundamental-Studies," IEEE Transactions on Nuclear Science, vol. 41, no. 6, pp. 2574-2584, Dec 1994, doi: 10.1109/23.340618. [5]洪建平, "短脈衝背面雷射驗證平台開發與FPGA BRAM錯誤率量化分析," 工程科學及海洋工程學研究所, 國立台灣大學,2024年,2024. [6]余世博, "短脈衝雷射在比較器電路內誘發單事件瞬態現象之分析方式建立," 工程科學及海洋工程學研究所, 國立台灣大學,2023年,2023. [7]A. Doridant et al., "Impact of Total Ionizing Dose on the Electromagnetic Susceptibility of a Single Bipolar Transistor," IEEE Transactions on Nuclear Science, vol. 59, no. 4, pp. 860-865, Aug 2012, doi: 10.1109/tns.2011.2181415. [8]L. S. Novikov, V. N. Mileev, E. N. Voronina, L. I. Galanina, A. A. Makletsov, and V. V. Sinolits, "Radiation effects on spacecraft materials," Journal of Surface Investigation-X-Ray Synchrotron and Neutron Techniques, vol. 3, no. 2, pp. 199- 214, Apr 2009, doi: 10.1134/s1027451009020062. [9]Gaillard, R. (2010). Single event effects: Mechanisms and classification. In Soft errors in modern electronic systems (pp. 27-54). Boston, MA: Springer US. [10]Jiang, H., Zhang, H., Harrington, R. C., Maharrey, J. A., Kauppila, J. S., Massengill, L. W., & Bhuva, B. L. (2018, March). Impact of supply voltage and particle LET on the soft error rate of logic circuits. In 2018 IEEE International Reliability Physics Symposium (IRPS) (pp. 4C-4). IEEE. [11]Savage, M. W., McNulty, P. J., Roth, D. R., & Foster, C. C. (1998). Possible role for secondary particles in proton-induced single event upsets of modern devices. IEEE Transactions on Nuclear Science, 45(6), 2745-2751. [12]Ryder, L. D., Ryder, K. L., Sternberg, A. L., Kozub, J. A., Khachatrian, A., Buchner, S. P., ... & Reed, R. A. (2021). Simulation of Pulsed-Laser-Induced Testing in Microelectronic Devices. IEEE Transactions on Nuclear Science, 68(10), 2496-2507. [13]Weulersse, C., Bezerra, F., Miller, F., Carriere, T., Buard, N., & Falo, W. (2008). Probing SET sensitive volumes in linear devices using focused laser beam at different wavelengths. IEEE Transactions on Nuclear Science, 55(4), 2007-2012.C. D. Jones, A. B. Smith, and E.F. Roberts, Book Title, Publisher, Location, Date. [14]Lei, Z., Luo, H., Chen, H., Shi, Q., & He, Y. (2011, June). Single Event Effects test for CMOS devices using 1064nm pulsed laser. In 2011 International Conference on Quality, Reliability, Risk, Maintenance, and Safety Engineering (pp. 325-328). IEEE. [15]Vincent Pouget (2021). Laser Testing for Single-Event Effects: Basics and Use Cases. hal-03852575 , version 1 (15-11-2022). [16]Laser_Pulses_Power_Energy_Equations . THORLABS. https://www.thorlabs.com/images/tabimages/Laser_Pulses_Power_Energy_Equati [17]Manual_F-1060-A_v1.0_20220608 [18]FW212C-Manual. THORLABS. https://www.thorlabs.com/_sd.cfm?fileName=TTN007303-D02.pdf&partNumber=FW212C [19]Mitutoyo. “https://shop.mitutoyo.eu/web/mitutoyo/en/mitutoyo/NIR_Main_category/M%20Plan%20Apo%20NIR%20%20M%20Plan%20Apo%20NIR%20HR/PG/M%20Plan%20Apo 20NIR/index.xhtml;jsessionid=B8E4B271B45CC40CAFBBBDFCDF8 F4CC4” [20]Mavritskii, O. B., Egorov, A. N., Pechenkin, A. A., Chumakov, A. I., & Savchenkov, D. V. (2018, February). The laser-only single-event effects test method for space electronics based on ultrashort-pulsed-laser'local irradiation'. In Frontiers in Ultrafast Optics: Biomedical, Scientific, and Industrial Applications XVIII (Vol. 10522, pp. 141-151).SPIE. [21]Robert H. Walden, Member, IEEE. Analog-to-Digital Converter Survey and Analysis. IEEE Journal on Selected Areas in Communications. 1999-04-01. [22]Bin Le, Thomas W. Rondeau, Jeffrey H. Reed, and Charles W. Bostian. Analog-to-digital converters. IEEE Signal Processing Magazine. 2005-11-01. [23]Guansheng Li, Yahya M. Tousi, Student Member, IEEE, Arjang Hassibi, Member, IEEE, and Ehsan Afshari, Member, IEEE. Delay-Line-Based Analog-to-Digital Converters. IEEE Transactions on Circuits & Systems II Express Briefs. 2009-06-01. [24]Oleg A. Mukhanov, Senior Member, Ieee, Deepnarayan Gupta, Senior Member, Ieee, Alan M. Kadin, And Vasili K. Semenov. Superconductor analog-to-digital converters. Proceedings of the IEEE. 2004-09-20. [25]Susan Luschas, Member, IEEE, Richard Schreier, Member, IEEE, and Hae-Seung Lee, Fellow, IEEE. Radio Frequency Digital-to-Analog Converter. IEEE Journal Of Solid-State Circuits, Vol. 39, No. 9, September 2004. [26]Douglas A. Mercer, Member, IEEE. Low-Power Approaches to High-Speed Current-Steering Digital-to-Analog Converters in 0.18-μm CMOS. IEEE Journal Of Solid-State Circuits, Vol. 42, No. 8, August 2007 [27]John Hyde, Member, IEEE, Todd Humes, Member, IEEE, Chris Diorio, Member, IEEE, Mike Thomas, and Miguel Figueroa. A 300-MS/s 14-bit Digital-to-Analog Converter in Logic CMOS. IEEE Journal Of Solid-State Circuits, Vol. 38, No. 5, May 2003. [28]G. Ritchie, Member, IEEE, J. Candy, Member, IEEE, and W. Ninke, Member, IEEE. Interpolative Digital-to-Analog Converters. IEEE Transactions On Communications, Vol. Com-22, No. 11, November 1974. [29]Benevenuti, F. (2022). Enhancements on fault injection for xilinx 7 series and ultrascale+ SRAM-based FPGAs. [30]Clayton R. Farias, Tiago R. Balen, Paulo F. Butzen, Graduate Program in Microelectronics (PGMICRO), Federal University of Rio Grande do Sul (UFRGS), Porto Alegre, Brazil. Cross-Section Estimation for Assessment of Circuit Susceptibility to Radiation. Latin American Test Symposium. 2024-04-09. [31]Zero-Error Systems(ZES)- State of the Art Power Reliability & Data Management https://zero-errorsystems.com/ [32]Clément Walter, "Rare Event Simulation and Splitting for Discontinuous Random Variables," ESAIM: Probability and Statistics 19 (2015) 794–811 DOI: 10.1051/ps/2015017. [33]NASA, “Natural Space Radiation Effects on Technology”, https://radhome.gsfc.nasa.gov/radhome/nat_space_rad_tech.htm | - |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/102174 | - |
| dc.description.abstract | 本研究完成了短脈衝背面照射雷射驗證平台及其光路系統的設計和架設,此光學實驗系統使用於各式不同電路設計之印製電路板的雷射背面照射測試,並進行電路受到雷射產生單事件效應之錯誤率分析。本研究的雷射測試系統選擇使用波長1060 nm的飛秒短脈衝雷射進行晶片測試,此雷射波段具有較佳的穿透率,因此是比較適合做為晶片背面照射的雷射源,而在光路設計中本研究使用類似於顯微鏡系統之成像模組,用於在實驗中觀察和監測待測物(Device Under Test, DUT),還結合了可以進行XYZ三軸控制的移動平台,以此支援在測試中DUT的高精度移動和掃描功能,將這些不同模組整合之後,本研究完成了一個相比其他輻射測試驗證系統更高效,並且具有可靠性的雷射輻射驗證系統。
本篇論文討論的實驗成果,以及雷射驗證平台之測試對象,是取用台大電機系陳信樹老師團隊研發之抗輻射晶片作為DUT進行雷射測試, DUT的種類包含了傳統類比數位轉換器(Analog-to-digital converter, ADC)、有抗輻射設計之ADC、傳統數位類比轉換器(Digital to analog converter, DAC)以及有抗輻射設計之DAC,本研究透過多次的雷射實驗,探討雷射照射、掃描造成DUT訊號錯誤的關聯,通過本研究之雷射驗證平台快速、高效的測試,便有能力產生更多佐證具抗輻射設計之晶片的測試數據,可與其他如重離子或質子束之實驗成果作比對和驗證,因此本研究成果有望為抗輻射電子元件的設計與優化提供重要的依據或參考,可為相關測試技術發展奠定不少的基礎。 | zh_TW |
| dc.description.abstract | This study completed the design and setup of a short-pulse backside laser irradiation verification platform and its optical system. This optical experimental system is used for laser backside irradiation testing of printed circuit boards with various circuit designs and for analyzing the error rate of Single Event Effects induced by the laser on the circuits. The laser testing system in this study uses a femtosecond short-pulse laser with a wavelength of 1060 nm for chip testing. This laser wavelength has better penetration, making it more suitable as a laser source for backside chip irradiation. In the optical path design, this study uses an imaging module similar to a microscope system to observe and monitor the Device Under Test (DUT) during experiments. It also incorporates a movable platform with XYZ three-axis control to support high-precision movement and scanning of the DUT during testing. By integrating these different modules, this study has completed a laser radiation verification system that is more efficient and reliable compared to other radiation testing verification systems.
The experimental results discussed in this paper and the test subjects of the laser verification platform involve radiation-resistant chips developed by Professor Hsin-Shu Chens team from the Department of Electrical Engineering at National Taiwan University, used as the DUT for laser testing. The types of DUT include traditional analog-to-digital converters (ADCs), radiation-resistant ADCs, traditional digital-to-analog converters (DACs), and radiation-resistant DACs. Through multiple laser experiments, this study explores the correlation between laser irradiation, scanning, and signal errors in the DUT. The rapid and efficient testing provided by the laser verification platform in this study has the capability to generate more supporting test data for radiation-resistant chip designs, which can be compared and verified with other experimental results such as heavy ion or proton beam tests. Therefore, the results of this study are expected to provide important references or foundations for the design and optimization of radiation-resistant electronic components, laying a significant foundation for the development of related testing technologies. | en |
| dc.description.provenance | Submitted by admin ntu (admin@lib.ntu.edu.tw) on 2026-03-18T16:07:58Z No. of bitstreams: 0 | en |
| dc.description.provenance | Made available in DSpace on 2026-03-18T16:07:58Z (GMT). No. of bitstreams: 0 | en |
| dc.description.tableofcontents | 口試委員審定書 i
致謝 ii 中文摘要 iii ABSTRACT iv 目次 vi 圖次 vii 表次 x CHAPTER 1 緒論 1 1.1 研究背景及動機 1 1.2 文獻探討 2 1.2.1 輻射效應的類型 2 1.2.2 雷射產生SEE之探討 3 1.3 研究範疇 5 1.4 論文組織架構 5 CHAPTER 2 短脈衝雷射背面照射驗證系統 6 2.1 背面照射雷射驗證平台之理論探討 6 2.2 背面照射雷射驗證平台之架設準備與解析 9 2.3 背面照射雷射驗證平台之模組介紹 11 2.3.1 雷射光學光路模組 12 2.3.2 影像觀測模組 16 2.3.3 移動控制平台模組 17 2.4 背面照射雷射驗證平台之整體架設 18 2.4.1 實驗完整架設 18 2.4.2 實驗操作細節 25 CHAPTER 3 研究方法及討論 29 3.1 實驗待測物介紹 29 3.1.1 類比數位轉換器(Analog-to-Digital Converter, ADC) 29 3.1.2 數位類比轉換器(Digital-to-Analog Converter, DAC) 30 3.2 雷射實驗設計 31 3.2.1 雷射實驗的量化指標 31 3.2.2 實驗方法及流程 34 CHAPTER 4 實驗結果與討論 41 4.1 Conventional ADC的實驗結果 41 4.1.1 Core Region的實驗結果 42 4.1.2 All Chip的實驗結果 44 4.2 Radiation-Tolerant DAC的實驗結果 47 CHAPTER 5 總結與未來展望 49 5.1 總結 49 5.2 未來展望 49 參考資料 51 | - |
| dc.language.iso | zh_TW | - |
| dc.subject | 短脈衝背面照射雷射驗證平台 | - |
| dc.subject | 單事件效應 | - |
| dc.subject | 錯誤率分析 | - |
| dc.subject | 類比數位轉換器 | - |
| dc.subject | 數位類比轉換器 | - |
| dc.subject | Short Pulse Back-Irradiated Laser Verification Platform | - |
| dc.subject | Single Event Effects | - |
| dc.subject | Error Rate Analysis | - |
| dc.subject | Analog-To-Digital Converters | - |
| dc.subject | Digital-To-Analog Converters | - |
| dc.title | 背面照射雷射驗證平台實驗建立與晶片測試量化分析 | zh_TW |
| dc.title | Establishment of Backside Laser Verification Platform Experiment and Quantitative Analysis of Chip Testing | en |
| dc.type | Thesis | - |
| dc.date.schoolyear | 114-1 | - |
| dc.description.degree | 碩士 | - |
| dc.contributor.oralexamcommittee | 蕭惠心;陳信樹;蔡坤諭 | zh_TW |
| dc.contributor.oralexamcommittee | Hui-Hsin Hsiao ;Hsin-Shu Chen;Kuen-Yu Tsai | en |
| dc.subject.keyword | 短脈衝背面照射雷射驗證平台,單事件效應錯誤率分析類比數位轉換器數位類比轉換器 | zh_TW |
| dc.subject.keyword | Short Pulse Back-Irradiated Laser Verification Platform,Single Event EffectsError Rate AnalysisAnalog-To-Digital ConvertersDigital-To-Analog Converters | en |
| dc.relation.page | 55 | - |
| dc.identifier.doi | 10.6342/NTU202504744 | - |
| dc.rights.note | 同意授權(限校園內公開) | - |
| dc.date.accepted | 2025-12-02 | - |
| dc.contributor.author-college | 工學院 | - |
| dc.contributor.author-dept | 工程科學及海洋工程學系 | - |
| dc.date.embargo-lift | 2030-12-01 | - |
| 顯示於系所單位: | 工程科學及海洋工程學系 | |
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