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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 吳志毅 | zh_TW |
| dc.contributor.advisor | Chih-I Wu | en |
| dc.contributor.author | 甄劭桓 | zh_TW |
| dc.contributor.author | Shao-Heng Chen | en |
| dc.date.accessioned | 2026-03-05T16:13:56Z | - |
| dc.date.available | 2026-03-06 | - |
| dc.date.copyright | 2026-03-05 | - |
| dc.date.issued | 2026 | - |
| dc.date.submitted | 2026-02-04 | - |
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/101858 | - |
| dc.description.abstract | 本研究利用化學氣相沉積（Chemical Vapor Deposition, CVD）方法成功合成大面積單層 WSe₂ 薄膜，並針對 WO₃ 及 Se 區溫度、壓力與載氣流速等參數進行優化。Raman 與 PL 量測證實所得薄膜具有單層結構，其 E₂g 與 A₁g 峰分別位於約 250 與 260 cm⁻¹，且 PL 峰位約 1.63–1.64 eV，符合直接能隙材料特徵。XPS 分析顯示 Se/W 原子比穩定接近 2.0，證明材料具良好化學計量性。
進一步製作背閘極場效電晶體後，長通道元件展現載子遷移率 20–30 cm²/V·s 及 10⁷–10⁸ 等級之開關電流比，顯示其優異的半導體表現。為抑制曝光過程造成之DIGS，本研究於接觸製程引入原子層沉積（ALD）形成之 AlOx 作為保護層，元件顯示明顯 n 型摻雜行為與電性提升。另一方面，於 WSe₂ 與 Pd 之間導入 Te–TeOx 作為接觸緩衝層以降低 MIGS，並改善能帶彎曲與接觸電阻。最後再結合紫外臭氧（Ultraviolet Ozone, UVO）處理形成薄 WOₓ 層，引入可控制 p 型摻雜，使元件閾值電壓正向位移並改善飽和電流與次臨界特性。接觸電阻則分別以 Y-function 與 TLM 進行交叉驗證，最終最低可達約 2 kΩ·μm；兩方法雖有微小差異，但趨勢一致，顯示多層次介面工程之有效性。 綜言之，本研究成功建立以 AlOx 保護層、Te–TeOx 緩衝層與 UVO 摻雜調控 為核心之接觸工程策略，能同時緩解 MIGS 與 DIGS 並調控能帶排列，顯著提升 WSe₂ 電晶體電性表現。本成果顯示二維半導體若能兼顧材料品質與介面設計，將可望於未來低功耗與高效能電子元件中展現高度應用潛力。 | zh_TW |
| dc.description.abstract | Monolayer WSe₂ films were synthesized via chemical vapor deposition (CVD), and the influences of WO₃ and Se source temperatures, chamber pressure, and carrier gas flow rate were systematically optimized. Raman spectroscopy revealed characteristic E₂g and A₁g phonon modes at ~250 and ~260 cm⁻¹, respectively, while photoluminescence (PL) exhibited a strong direct bandgap emission near 1.63–1.64 eV. X-ray photoelectron spectroscopy (XPS) confirmed a stable Se/W atomic ratio close to 2.0, indicating good chemical stoichiometry and process reproducibility.
Back-gated WSe₂ FETs fabricated using wet transfer exhibited field-effect mobility values of ~20–30 cm²/V·s and on/off current ratios exceeding 10⁷, demonstrating excellent semiconducting behavior. To mitigate DIGS generated during lithography, an AlOx protective layer was introduced, effectively reducing interface trap density and inducing an n-type doping effect. In addition, an ultrathin Te–TeOx interlayer was inserted between Pd and WSe₂ to suppress MIGS and smooth the band-bending profile, thereby lowering the contact resistance. Subsequent ultraviolet-ozone (UVO) treatment generated a thin WOₓ surface layer that provided controllable p-type doping, shifting the threshold voltage toward the positive direction and further improving the device switching behavior. Contact resistance was extracted using both the Y-function and transfer-length method (TLM), with the optimized structure achieving a minimum value of ~2 kΩ·μm. Slight deviations between the two extraction methods were attributed to modeling assumptions in the Y-function approach, while both showed consistent trends. In conclusion, this work establishes an integrated contact-interface engineering strategy combining AlOx encapsulation, Te–TeOx buffer layers, and UVO-induced doping control, effectively suppressing both MIGS and DIGS while optimizing band alignment and reducing contact resistance. These results demonstrate that high-quality WSe₂, when coupled with well-designed contact engineering, holds strong potential for future low-power and high-performance electronic applications. | en |
| dc.description.provenance | Submitted by admin ntu (admin@lib.ntu.edu.tw) on 2026-03-05T16:13:56Z No. of bitstreams: 0 | en |
| dc.description.provenance | Made available in DSpace on 2026-03-05T16:13:56Z (GMT). No. of bitstreams: 0 | en |
| dc.description.tableofcontents | 誌謝 i
摘要 iii Abstract iv 目次 vi 圖次 ix 表次 xiii Chapter 1 緒論 1 1.1 二維材料簡介 1 1.1.1 二維材料背景簡介 1 1.1.2 半導體摩爾定律與極限 3 1.1.3 二維材料之優勢及潛力 6 1.2 過渡金屬二硫族化合物 10 1.2.1 過度金屬二硫族化合物結構及基本性質 10 1.2.2 過渡金屬二硫族化合物製備 13 1.3 過鍍金屬二硫族化物：二硒化鎢 15 1.3.1 二硒化鎢之能帶結構及基本性質 15 1.3.2 二硒化鎢的應用及優勢 16 1.4 研究動機 17 1.4.1 大規模單層二硒化鎢薄膜製備 17 1.4.2 金屬二維半導體材料之界面能障 18 1.4.3 降低接觸電阻之方法研究 19 Chapter 2 實驗設備與理論基礎 22 2.1 製程設備簡介 22 2.1.1 化學氣相沉積系統 22 2.1.2 快速熱退火系統 24 2.1.3 步進式微影製程 25 2.1.4 氦離子束顯微鏡及氦離子束微影製程 26 2.1.5 熱蒸鍍機 28 2.2 量測設備簡介 30 2.2.1 拉曼光譜與光致發光光譜儀 30 2.2.2 穿隧式電子顯微鏡 32 2.2.3 原子力顯微鏡 34 2.2.4 X射線光電子能譜儀 35 2.2.5 紫外光電子能譜儀 37 2.2.6 電性量測系統 38 2.3 單層二硒化鎢濕式轉移法 40 2.4 場效電晶體電性參數萃取方法 41 2.4.1 閾值電壓 41 2.4.2 場效載子遷移率 43 2.4.3 電流開關比 44 2.4.4 次臨界擺幅 45 2.4.5 本徵載子遷移率 45 2.4.6 接觸電阻 46 Chapter 3 大規模單層二硒化鎢的合成 49 3.1 研究背景 49 3.2 化學氣相沉積法 49 3.2.1 三氧化鎢製程溫度 51 3.2.2 硒粉之工作溫度 53 3.2.3 成長壓力 55 3.3 二硒化鎢材料分析 57 3.3.1 拉曼光譜分析 57 3.3.2 光致發光光譜分析 60 3.3.3 X射線光電子能譜分析 62 3.4 二硒化鎢場效電晶體 63 3.4.1 濕式轉移製程 64 3.4.2 場效電晶體製程 65 3.4.3 電性萃取分析 66 Chapter 4 界面保護層與臭氧調控摻雜 69 4.1 研究動機 69 4.2 氧化鋁保護層 70 4.3 氧化鋁保護層對元件電性與摻雜 71 4.4 氧化鋁摻雜之光譜佐證 74 4.5 臭氧處理對元件電性與摻雜影響 76 4.6 臭氧誘發摻雜之光譜驗證 79 Chapter 5 接觸工程於二硒化鎢元件之電性調控 82 5.1 研究背景 82 5.2 碲接觸緩衝層對元件之影響 83 5.3 結合氧化鋁保護層與碲接觸緩衝層之元件電性表現 84 5.4 Te–TeOx接觸緩衝層之界面與能帶分析 85 5.5 結合 UVO 處理之最終接觸工程優化與接觸電阻萃取 89 Chapter 6 結論與未來展望 95 6.1 研究結論 95 6.2 未來展望 97 6.3 結語 98 Reference 99 | - |
| dc.language.iso | zh_TW | - |
| dc.subject | 二硒化鎢 | - |
| dc.subject | 二維材料 | - |
| dc.subject | 接觸工程 | - |
| dc.subject | 紫外臭氧處理 | - |
| dc.subject | 場效電晶體 | - |
| dc.subject | 金屬誘發能隙態 | - |
| dc.subject | WSe₂ | - |
| dc.subject | two-dimensional semiconductors | - |
| dc.subject | contact engineering | - |
| dc.subject | UVO treatment | - |
| dc.subject | field-effect transistors | - |
| dc.subject | MIGS | - |
| dc.title | 單層二硒化鎢合成研究與 二維P型電晶體元件之接觸工程 | zh_TW |
| dc.title | Synthesis of Monolayer WSe2 for Two-Dimensional P-Type Transistors with Contact Engineering | en |
| dc.type | Thesis | - |
| dc.date.schoolyear | 114-1 | - |
| dc.description.degree | 碩士 | - |
| dc.contributor.oralexamcommittee | 吳肇欣;楊伯康;周昂昇 | zh_TW |
| dc.contributor.oralexamcommittee | Chao-Hsin Wu;Po-Kang Yang;Ang-Sheng Chou | en |
| dc.subject.keyword | 二硒化鎢,二維材料接觸工程紫外臭氧處理場效電晶體金屬誘發能隙態 | zh_TW |
| dc.subject.keyword | WSe₂,two-dimensional semiconductorscontact engineeringUVO treatmentfield-effect transistorsMIGS | en |
| dc.relation.page | 103 | - |
| dc.identifier.doi | 10.6342/NTU202600401 | - |
| dc.rights.note | 同意授權(全球公開) | - |
| dc.date.accepted | 2026-02-06 | - |
| dc.contributor.author-college | 電機資訊學院 | - |
| dc.contributor.author-dept | 光電工程學研究所 | - |
| dc.date.embargo-lift | 2026-03-06 | - |
| 顯示於系所單位： | 光電工程學研究所 | |
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