請用此 Handle URI 來引用此文件：
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/101682完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 邱雅萍 | zh_TW |
| dc.contributor.advisor | Ya-Ping Chiu | en |
| dc.contributor.author | 楊子良 | zh_TW |
| dc.contributor.author | Zi-Liang Yang | en |
| dc.date.accessioned | 2026-02-26T16:40:43Z | - |
| dc.date.available | 2026-02-27 | - |
| dc.date.copyright | 2026-02-26 | - |
| dc.date.issued | 2026 | - |
| dc.date.submitted | 2026-02-09 | - |
| dc.identifier.citation | Chapter 1
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Program SEMITIP version 6, <available at http://www.andrew.cmu.edu/user/feenstra/> (2011). 22 Lattyak, C., Gehrke, K. & Vehse, M. Layer-thickness-dependent work function of MoS2 on metal and metal oxide substrates. The Journal of Physical Chemistry C 126, 13929–13935 (2022). 23 Lee, S. Y. et al. Large work function modulation of monolayer MoS2 by ambient gases. Acs Nano 10, 6100–6107 (2016). 24 Smithe, K. K. H., English, C. D., Suryavanshi, S. V. & Pop, E. Intrinsic electrical transport and performance projections of synthetic monolayer MoS2 devices. 2D Materials 4, 011009 (2016). 25 Yuan, H. et al. Field effects of current crowding in metal-MoS2 contacts. Applied Physics Letters 108, 103505 (2016). 26 Moon, I. et al. Analytical measurements of contact resistivity in two-dimensional WSe2 field-effect transistors. 2D Materials 8, 045019 (2021). 27 Mitta, S. B. et al. Electrical characterization of 2D materials-based field-effect transistors. 2D Materials 8, 012002 (2021). 28 Shen, P. C. et al. Ultralow contact resistance between semimetal and monolayer semiconductors. Nature 593, 211–217 (2021). 29 Szabó, Á., Jain, A., Parzefall, M., Novotny, L. & Luisier, M. Electron Transport through Metal/MoS2 Interfaces: Edge- or Area-Dependent Process? Nano Letters 19, 3641–3647 (2019). 30 Badaroglu, M. et al. More Moore. International Roadmap for Devices and Systems 2024 (2024). 31 Wu, W.-C. et al. in 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits). 1–2 (IEEE). 32 English, C. D., Shine, G., Dorgan, V. E., Saraswat, K. C. & Pop, E. Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition. Nano Letters 16, 3824–3830 (2016). 33 Schranghamer, T. F. et al. Ultrascaled Contacts to Monolayer MoS2 Field Effect Transistors. Nano Letters (2023). 34 De La Rosa, C. J. L. et al. Insight on the Characterization of MoS2 Based Devices and Requirements for Logic Device Integration. ECS Journal of Solid State Science and Technology 5, Q3072–Q3081 (2016). 35 Kaushik, N., Karmakar, D., Nipane, A., Karande, S. & Lodha, S. Interfacial n-doping using an ultrathin TiO2 layer for contact resistance reduction in MoS2. ACS applied materials & interfaces 8, 256–263 (2016). 36 Smithe, K. K., English, C. D., Suryavanshi, S. V. & Pop, E. High-field transport and velocity saturation in synthetic monolayer MoS2. Nano letters 18, 4516–4522 (2018). 37 Smets, Q. et al. in 2019 IEEE International Electron Devices Meeting (IEDM). (IEEE). 38 Yang, N. et al. Ab Initio Computational Screening and Performance Assessment of van der Waals and Semimetallic Contacts to Monolayer WSe2 P-Type Field-Effect Transistors. IEEE Transactions on Electron Devices 70, 2090–2097 (2023). 39 Liu, Y. et al. Low-resistance metal contacts to encapsulated semiconductor monolayers with long transfer length. Nature Electronics 5, 579–585 (2022). Chapter 4 1 Albert L. Sino, P. et al. 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Physical Review B 106, 235414 (2022). 7 Yin, K. et al. Effects of Se substitution on the Schottky barrier of a MoSxSe(2−x)/graphene heterostructure. Journal of Physics D: Applied Physics 54, 265302 (2021). 8 Feenstra, R. M. Tunneling spectroscopy of the (110) surface of direct-gap III-V semiconductors. Physical Review B 50, 4561–4570 (1994). 9 Peng, W. et al. Recent Progress on the Scanning Tunneling Microscopy and Spectroscopy Study of Semiconductor Heterojunctions. Small 17, 2100655 (2021). 10 Chen, C. J. Scanning tunneling microscopy: A chemical perspective. Scanning microscopy 7, 4 (1993). 11 Chen, C. J. Introduction to Scanning Tunneling Microscopy. (2007). 12 Chiu, M.-H. et al. Determination of band alignment in the single-layer MoS2/WSe2 heterojunction. Nature Communications 6, 7666 (2015). 13 Murray, C. et al. Comprehensive tunneling spectroscopy of quasifreestanding MoS2 on graphene on Ir(111). Physical Review B 99 (2019). 14 Chiu, Y.-P., Huang, H.-W. & Wu, Y.-R. Utilizing the Janus MoSSe surface polarization in designing complementary metal-oxide-semiconductor field-effect transistors. Physical Review Applied 21, 044046 (2024). 15 Farkous, M. et al. Anisotropy of effective masses induced by strain in Janus MoSSe and WSSe monolayers. Physica E: Low-dimensional Systems and Nanostructures 134, 114826 (2021). 16 Qin, X. et al. InSb/Janus MoSSe van der Waals heterostructure: First-principles calculation study of electronic structure and optical properties. Solid State Communications 401, 115921 (2025). 17 Zhang, X. et al. The electronic properties of hydrogenated Janus MoSSe monolayer: a first principles investigation. Materials Research Express 6, 105055 (2019). 18 Trainer, D. J. et al. Visualization of defect induced in-gap states in monolayer MoS2. npj 2D Materials and Applications 6 (2022). 19 Kozhakhmetov, A. et al. Controllable p‐Type Doping of 2D WSe2 via Vanadium Substitution. Advanced Functional Materials, 2105252 (2021). 20 Schuler, B. et al. How Substitutional Point Defects in Two-Dimensional WS2 Induce Charge Localization, Spin-Orbit Splitting, and Strain. ACS Nano 13, 10520–10534 (2019). 21 Feenstra, R. M. Electrostatic potential for a hyperbolic probe tip near a semiconductor. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 21, 2080 (2003). 22 Qiu, Z. et al. Giant gate-tunable bandgap renormalization and excitonic effects in a 2D semiconductor. Sci. Adv. 5, eaaw2347 (2019). 23 Hu, B. et al. Quasiparticle Band Structure, Exciton, and Optical Property in Janus Structures of Transition-Metal Dichalcogenide Monolayers. ACS Omega 10, 30924–30934 (2025). 24 Li, F., Wei, W., Huang, B. & Dai, Y. Excited-State Properties of Janus Transition-Metal Dichalcogenides. The Journal of Physical Chemistry C 124, 1667–1673 (2020). 25 Long, C., Dai, Y. & Jin, H. Effect of point defects on electronic and excitonic properties in Janus-MoSSe monolayer. Physical Review B 104 (2021). 26 Raja, A. et al. Coulomb engineering of the bandgap and excitons in two-dimensional materials. Nature Communications 8, 15251 (2017). 27 Itzhak, R. et al. Exciton Manipulation via Dielectric Environment Engineering in 2D Semiconductors. ACS Applied Optical Materials 3, 1330–1338 (2025). 28 Sayyad, M. et al. The Defects Genome of Janus Transition Metal Dichalcogenides. Advanced Materials 36 (2024). 29 Xiao, S. et al. Atomic-layer soft plasma etching of MoS2. Scientific Reports 6, 19945 (2016). 30 Kim, B. H., Gu, H. H. & Yoon, Y. J. Atomic rearrangement of a sputtered MoS2 film from amorphous to a 2D layered structure by electron beam irradiation. Scientific Reports 7 (2017). 31 Shao, R. et al. Direct observation of structural transitions in the phase change material Ge2Sb2Te5. Journal of Materials Chemistry C 4, 9303–9309 (2016). 32 Schmeink, J., Osterfeld, J., Kharsah, O., Sleziona, S. & Schleberger, M. Unraveling the influence of defects in Janus MoSSe and Janus alloys MoS2(1−x)Se2x. npj 2D Materials and Applications 8, 67 (2024). 33 Xu, J. et al. Frenkel-defected monolayer MoS2 catalysts for efficient hydrogen evolution. Nature Communications 13 (2022). 34 Luo, N., Chen, C., Yang, D., Hu, W. & Dong, F. S defect-rich ultrathin 2D MoS2: The role of S point-defects and S stripping-defects in the removal of Cr(VI) via synergistic adsorption and photocatalysis. Applied Catalysis B: Environmental 299, 120664 (2021). 35 Nhiem, L. T., Khanh Linh, D. T., Nguyen, H. & Hieu, N. H. Defect-Driven MoS2 Nanosheets toward Enhanced Sensing Sensitivity. ACS Omega 9, 27065–27070 (2024). 36 Farronato, M. et al. Reservoir Computing with Charge‐Trap Memory Based on a MoS2 Channel for Neuromorphic Engineering. Advanced Materials 35, 2205381 (2023). 37 Oh, D. et al. Synaptic MoS2 transistors based on charge trapping two-dimensionally confined in Sr2-xCox Nb3O10 nanosheets. Materials Science in Semiconductor Processing 160, 107424 (2023). Chapter 5 1. Rybalchenko, Y. et al. Scanning tunneling microscopy for imaging and quantification of defects in as-deposited MoS2. Solid-State Electronics 209, 108781 (2023). 2 Purckhauer, K., Maier, S., Merkel, A., Kirpal, D. & Giessibl, F. J. Combined atomic force microscope and scanning tunneling microscope with high optical access achieving atomic resolution in ambient conditions. Rev Sci Instrum 91, 083701 (2020). 3 Auer, A., Eder, B. & Giessibl, F. J. Electrochemical AFM/STM with a qPlus sensor: A versatile tool to study solid-liquid interfaces. The Journal of Chemical Physics 159 (2023). 4 Schelchshorn, M., Stilp, F., Weiss, M. & Giessibl, F. J. On the origin and elimination of cross coupling between tunneling current and excitation in scanning probe experiments that utilize the qPlus sensor. Review of Scientific Instruments 94 (2023). 5 Berweger, S. et al. Microwave near-field imaging of two-dimensional semiconductors. Nano Lett 15, 1122–1127 (2015). 6 Wu, D. et al. Uncovering edge states and electrical inhomogeneity in MoS2 field-effect transistors. Proc Natl Acad Sci U S A 113, 8583–8588 (2016). 7 Xu, K. et al. Validating the Use of Conductive Atomic Force Microscopy for Defect Quantification in 2D Materials. ACS Nano 17, 24743–24752 (2023). 8 Yang, Y. et al. Atomic Defect Quantification by Lateral Force Microscopy. ACS Nano 18, 6887–6895 (2024). 9 Minj, A. et al. Direct Assessment of Defective Regions in Monolayer MoS2 Field-Effect Transistors through In Situ Scanning Probe Microscopy Measurements. ACS nano 18, 10653–10666 (2024). 10 Lu, A. Y. et al. Unraveling the Correlation between Raman and Photoluminescence in Monolayer MoS2 through Machine‐Learning Models. Advanced Materials 34, 2202911 (2022). 11 Chiang, C. C. et al. Design and Process Co-Optimization of 2-D Monolayer Transistors via Machine Learning. Ieee Transactions on Electron Devices 70, 5991–5996 (2023). 12 Smalley, D. et al. Detecting atomic-scale surface defects in STM of TMDs with ensemble deep learning. MRS Advances 9, 890–896 (2024). 13 Narasimha, G. et al. Uncovering multiscale structure-property correlations via active learning in scanning tunneling microscopy. npj Computational Materials 11 (2025). 14 Sung, J. et al. Autonomous AI‐Driven Measurement and Characterization of 2D Materials Using Scanning Probe Microscopy. Small Structures (2025). | - |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/101682 | - |
| dc.description.abstract | 隨著半導體技術逼近物理極限，二維材料因其優異的靜電控制能力被視為關鍵解方。然而，在實際應用上，「金屬接觸的微縮極限」與「新穎材料的缺陷電子特性」仍是兩大挑戰。本論文利用掃描穿隧顯微鏡與掃描穿隧能譜技術，針對上述議題進行了元件與材料的原子級探討。首先，針對元件層級的接觸電阻與傳輸機制，本研究開發了剖面臨場掃描穿隧顯微鏡技術 (STM/STS)。我們成功在超高真空環境下，對運作中的鉍接觸單層二硫化鉬電晶體進行量測，首次直接觀測到載子由金屬注入二維通道的距離變化，並精確量測出其特徵傳輸長度僅約 2.0 nm。此結果證實了二維材料搭配鉍接觸具有符合未來 1 nm 製程節點需求的微縮潛力。此外，針對材料層級的本質特性，本研究探討了具備內建電場的新穎 Janus MoSSe 單層材料。利用 STM/STS，我們首次解析了其複雜的缺陷電子結構。實驗發現，合成過程中的殘留硫摻雜會在價帶附近產生非均勻分布的淺層能隙態。我們進一步分析，鑑定出兩類本徵電荷缺陷：一類作為導電電荷陷阱，會顯著縮減局部能隙；而另一類則作為絕緣散射中心，具有較低的態密度特徵。本論文結合了創新的量測技術與微觀物理分析，探討原子級特徵如何影響二維材料與元件的巨觀表現，為下世代電子材料與元件的設計揭示了關鍵的研究方向。
本研究強調了單層硫硒化鉬的電子結構對奈米尺度組成和結構變化的高度敏感性，並展示了掃描穿隧式顯微鏡和掃描穿隧式光譜在原子尺度解析這些效應中的應用潛力。這些發現為理解二維詹努斯過渡金屬硫族化合物及其在電子學和光電子學中的潛在應用提供了重要的貢獻。 | zh_TW |
| dc.description.abstract | As semiconductor technology approaches its physical limits, two-dimensional (2D) materials are viewed as a key solution due to their superior electrostatic control capabilities. However, in practical applications, the "scaling limits of metal contacts" and the "defect electronic properties of novel materials" remain two major challenges. This dissertation utilizes Scanning Tunneling Microscopy (STM) and Scanning Tunneling Spectroscopy (STS) to conduct an atomic-scale investigation into both "devices" and "materials" regarding these issues. First, we addressed contact resistance and investigate transport behaviors at the device level. This study developed an Operando Cross-Sectional Scanning Tunneling Microscopy (Operando XSTM) technique. We successfully measured an operating bismuth (Bi)-contacted monolayer molybdenum disulfide (MoS2) transistor in an ultra-high vacuum environment. For the first time, we directly observed the carrier injection from the metal into the 2D channel and precisely measured the characteristic transfer length (LT) to be only approximately 2.0 nm. This result confirms the potential of 2D materials combined with Bi contacts to meet the scaling requirements of future 1 nm technology nodes. Furthermore, regarding the intrinsic properties at the material level, this research explored novel monolayer Janus MoSSe materials possessing an intrinsic electric field. Using STM/STS, we unraveled their complex defect electronic structure for the first time. Experiments revealed that residual sulfur dopants from the synthesis process generate non-uniformly distributed shallow in-gap states near the valence band. Further analysis identified two types of native charge defects: Type A (selenium vacancies) act as conductive charge traps that significantly reduce the local bandgap, while Type B (structural disorder) functions as insulating scattering centers with lower density of states features. Combining innovative measurement techniques with microscopic physical analysis, this dissertation investigates how atomic-scale features influence the macroscopic performance of 2D materials and devices, revealing key research directions for the design of next-generation electronic materials and devices. This study highlights the high sensitivity of the electronic structure of monolayer MoSSe to nanoscale compositional and structural variations, demonstrating the potential of STM and STS in resolving these effects at the atomic scale. These findings provide significant contributions to understanding 2D Janus transition metal dichalcogenides and their potential applications in electronics and optoelectronics. | en |
| dc.description.provenance | Submitted by admin ntu (admin@lib.ntu.edu.tw) on 2026-02-26T16:40:43Z No. of bitstreams: 0 | en |
| dc.description.provenance | Made available in DSpace on 2026-02-26T16:40:43Z (GMT). No. of bitstreams: 0 | en |
| dc.description.tableofcontents | 摘要 i
Abstract ii Content iv List of Figures x List of Tables xiii Chapter 1 Introduction 1 1.1 The Rise of Two-Dimensional Materials 1 1.1.1 Beyond Silicon: The Post-Moore’s Law Era 1 1.1.2 Opportunities for Two-Dimensional Materials 1 1.2 Technical Bottlenecks in 2D Devices: From Channel to Contact 2 1.2.1 Progress in Channel Scaling 2 1.2.2 The Challenge of Contact Resistance and Transfer Length 3 1.2.3 The Need for Direct Atomic-Scale Measurement 4 1.3 Exploration of Advanced Materials: The Rise of 2D Janus Materials 5 1.3.1 Beyond Traditional TMDs: Structural Engineering 5 1.3.2 Symmetry Breaking and Unique Properties 6 1.3.3 The Gap Between Theory and Reality: The Role of Defects 6 1.3.4 The Necessity of Atomic-Scale Investigation 7 1.4 Scanning Tunneling Microscopy (STM): Probing at the Atomic Limit 8 1.4.1 History of STM and cross-sectional STM 8 1.4.2 The Applications of STM in 2D Materials Research 11 1.5 Research Objectives and Thesis Organization 14 1.5.1 Research Objectives 14 1.5.2 Thesis Organization 15 References of Chapter 1: 16 Chapter 2 Experimental Methods 22 2.1 TMDs Synthesis 22 2.1.1 CVD Growth of Monolayer MoS2 22 2.1.2 Plasma-Assisted Conversion for Janus MoSSe 23 2.2 Device Fabrication 25 2.2.1 Two-Dimensional Material Transfer 25 2.2.2 Lithography and Metal Deposition 26 2.3 Material Characterization 28 2.3.1 Atomic Force Microscopy (AFM) 28 2.3.2 Raman and Photoluminescence Spectroscopy 29 2.3.3 Transmission Electron Microscopy (TEM) and Elemental Analysis 30 2.4 Scanning Tunneling Microscopy (STM) 31 2.4.1 Principles and Applications of STM 31 2.4.1.1 Quantum Tunneling and Tunneling Current 32 2.4.1.2 Constant Current Mode (CCM) 33 2.4.1.3 Scanning Tunneling Spectroscopy (STS) and Lock-in Amplifier Technique 34 2.4.1.4 Current Imaging Tunneling Spectroscopy (CITS) 35 2.4.1.5 Tip-Induced Band Bending (TIBB) 36 2.4.2 Cross-Sectional STM (XSTM) 38 2.4.3 Development of Operando XSTM 39 2.4.4 Operando XSTM Workflow for Bi–MoS2 Transistors 46 2.4.4.1 Cleavage Preparation and UHV Cleaving 47 2.4.4.2 Electrical Integrity Check Before, During and After Operando XSTM 49 2.4.4.3 Navigation on the Cross-Section 52 2.4.4.4 Identifying the MoS2 Monolayer Region 55 2.4.4.5 Probing the Contact Edge 57 2.4.4.6 Assigning Source and Drain and Defining the Voltage/Energy Reference in Operando STS 60 2.4.4.7 Operando STS Acquisition Strategy 62 2.4.4.8 Definition of Band Edges and Uncertainty Estimation 68 2.4.4.9 Transfer-Length Fitting Procedure for Band-Edge Bending 71 2.4.4.10 Gate-Bias Selection for Operando STS: Comparability and Reliability Considerations 72 2.4.4.11 Practical Summary and Success Checklist 76 2.5 Experimental Procedures for Specific Studies 78 2.5.1 Experimental Details of Study 1: Direct Probing of Transfer Length in Bi-MoS2 Transistors 79 2.5.1.1 Chemical vapor deposition (CVD) of monolayer MoS2 and WSe2 monolayers. 79 2.5.1.2 Standard chip fabrication. 81 2.5.1.3 MoS2/SiO2 devices fabrication for electrical characterization. 82 2.5.1.4 Transfer method of monolayer MoS2 or WSe2 onto dielectric/Si substrates for XSTM measurement device. 83 2.5.1.5 MoS2/SiO2 and MoS2/HfO2 Device fabrication for XSTM measurement. 83 2.5.1.6 XSTM measurement setup. 84 2.5.2 Experimental Details of Study 2: Electronic Structure in Plasma-Assisted 2D Janus MoSSe Monolayers 85 2.5.2.1 Chemical Vapor Deposition (CVD) of Monolayer MoS2. 85 2.5.2.2 Janus Conversion Process. 86 2.5.2.3 STM Measurement Setup. 87 2.5.2.4 Materials Characterization. 87 2.5.2.5 DFT Computational Detail 88 References of Chapter 2: 89 Chapter 3 Directly Probing Carrier Transfer Length in Bi-MoS2 Transistors 94 3.1 Introduction 94 3.1.1 The Contact Scaling Limit 94 3.1.2 Limitations of Macroscopic Models 94 3.1.3 Chapter Objective 95 3.2 Device Performance of MoS2 Transistor with Bi Metal Contact 95 3.3 XSTM Measurement 99 3.3.1 Probing The Interface and Layers Identification 102 3.4 Operando XSTM/STS 102 3.4.1 Band Edge Evolution in MoS2 Devices with Different Operating Conditions and Under Different Regions. 103 3.4.2 Why Does Band Edge Shift Around Contact Edges? 105 3.4.3 Carrier Injection Induced Band Edge Shifting 106 3.4.4 Exclusion of Dopants, Disorder and Artifact 112 3.4.5 XSTM Measurement Under Various VG and VDS: Reproducibility Verification 115 3.5 Transfer Length Analysis Based on The Results of Operando XSTM 115 3.5.1 Transfer Length Varying under Different Operating Conditions 119 3.5.2 TLM Model vs. Direct Measurement 119 3.5.2.1 Metallization of MoS2 under Bi contact and its implication to contact modeling 120 3.5.2.2 Mechanism and implications for contact-length scaling: linking XSTM-derived LT to TLM 122 3.5.3 Operando XSTM Measurement on Bi-contacted MoS2 n-Type Device with HfO2 Dielectric and Pd/Sb Contacted WSe2 p-type Transistor 125 3.6 Summary 127 References of Chapter 3: 129 Chapter 4 Atomic-Scale Characterization of Defects and Electronic Properties in Monolayer Janus MoSSe 132 4.1 Introduction 132 4.1.1 The Gap Between Theory and Reality 132 4.1.2 Microscopic Electronic Insight 132 4.1.3 Chapter Objective 133 4.2 Synthesis and Material Characterization 133 4.2.1 Plasma-Assisted Selenization Process (PASP) 133 4.2.2 Monolayer Janus MoSSe Characterization 134 4.3 STM/S Measurement on Janus MoSSe Monolayer 136 4.3.1 In-gap States Induced by Intrinsic Sulfur Dopants 139 4.3.2 Hypothesis Verified by DFT Calculations 142 4.3.3 Origin of In-Gap States in Janus MoSSe: Reasoning and Experimental Validation 145 4.4 Impact of The Intrinsic Dipole on STS and The Investigation on Excitonic Effect 147 4.4.1 The Influence of The Out-of-plane Dipole on STS Band Edge Determination 148 4.4.2 Excitonic Effect in The Janus system 149 4.5 Charged Defects: Identification and Spectroscopic Characteristics 150 4.5.1 Bias-Dependent Imaging and LDOS Fingerprints 150 4.5.2 Electronic Structure Evolutions Near Defects 152 4.5.3 Visualization Band Alignments of Defects 155 4.5.4 Assignment of Type A and Type B Defects: Rationale and Criteria 157 4.6 Summary 162 References of Chapter 4: 163 Chapter 5 Conclusion and Future Outlook 167 5.1 Summary of Key Findings 167 5.2 Future Outlook 168 References of Chapter 5: 171 References 173 | - |
| dc.language.iso | en | - |
| dc.subject | 掃描式穿隧顯微鏡 | - |
| dc.subject | 二維材料 | - |
| dc.subject | 單層硫硒化鉬 | - |
| dc.subject | 電晶體 | - |
| dc.subject | 二硫化鉬 | - |
| dc.subject | 金屬接觸工程 | - |
| dc.subject | 元件微縮 | - |
| dc.subject | Scanning Tunneling Microscopy (STM) | - |
| dc.subject | Janus | - |
| dc.subject | 2D material | - |
| dc.subject | Monolayer MoSSe | - |
| dc.subject | Transistor | - |
| dc.subject | MoS2 | - |
| dc.subject | Contact Engineering | - |
| dc.subject | Device Scaling | - |
| dc.title | 二維材料與元件之原子級解析：二硫化鉬電晶體金屬接觸之傳輸機制與雙面硫硒化鉬之缺陷調控電子結構 | zh_TW |
| dc.title | Atomic-Scale Insights of 2D Materials and Devices: Transport Mechanisms in Metal Contacts of MoS2 Transistors and Defect-Modulated Electronic Structures of Janus MoSSe | en |
| dc.type | Thesis | - |
| dc.date.schoolyear | 114-1 | - |
| dc.description.degree | 博士 | - |
| dc.contributor.oralexamcommittee | 林麗瓊;陳貴賢;闕郁倫;藍彥文 | zh_TW |
| dc.contributor.oralexamcommittee | Li-Chyong Chen;Kuei-Hsien Chen;Yu-Lun Chueh;Yann-Wen Lan | en |
| dc.subject.keyword | 掃描式穿隧顯微鏡,二維材料單層硫硒化鉬電晶體二硫化鉬金屬接觸工程元件微縮 | zh_TW |
| dc.subject.keyword | Scanning Tunneling Microscopy (STM),Janus2D materialMonolayer MoSSeTransistorMoS2Contact EngineeringDevice Scaling | en |
| dc.relation.page | 173 | - |
| dc.identifier.doi | 10.6342/NTU202600714 | - |
| dc.rights.note | 未授權 | - |
| dc.date.accepted | 2026-02-10 | - |
| dc.contributor.author-college | 重點科技研究學院 | - |
| dc.contributor.author-dept | 奈米工程與科學學位學程 | - |
| dc.date.embargo-lift | N/A | - |
| 顯示於系所單位： | 奈米工程與科學學位學程 | |
文件中的檔案：
| 檔案 | 大小 | 格式 | |
|---|---|---|---|
| ntu-114-1.pdf 未授權公開取用 | 20.18 MB | Adobe PDF |
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