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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 李尉彰 | zh_TW |
| dc.contributor.advisor | Wei-Chang Li | en |
| dc.contributor.author | 蔡淳樸 | zh_TW |
| dc.contributor.author | Chun-Pu Tsai | en |
| dc.date.accessioned | 2026-01-27T16:14:47Z | - |
| dc.date.available | 2026-01-28 | - |
| dc.date.copyright | 2026-01-27 | - |
| dc.date.issued | 2026 | - |
| dc.date.submitted | 2026-01-19 | - |
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/101365 | - |
| dc.description.abstract | 做為微機電振撞共振器的分支，原子力顯微鏡透過共振操作懸臂樑量測樣品奈米尺度元件之表面拓譜與材料性質，從而推動了軟物質、物理學、材料科學和奈米磨擦學巨大的發展；射頻開關透過低損失和高隔離的導通/開路狀態切換操作，成為無線通訊系統與元件快速測試平台中的關鍵元件；能量擷取器、致動器與慣性開關透過設計此一強非線性碰撞操作提高元件輸出、精密度或頻寬。雖然已經有許多文獻探討振撞共振器的系統行為，隨著元件尺度的縮小，靜電非線性、幾何非線性與材料非線性將影響系統行為並使得元件響應複雜而難以設計與優化。
本研究針對微機電振撞共振器進行了深度的探索並拓展對其系統響應於週期驅動下之了解。開發、設計與探討兩種新型元件—微機電共振開關與吸引子交換器—之性能、應用與理論基礎。基於互補式金屬氧化物半導體-微機電系統製程平台，本研究理論與實驗性地揭示了摺疊樑梳狀電極制動微機電振撞共振器於非線性操作下的系統響應。基於平均法與SIMULINK系統級別模型，元件輕敲操作下之頻譜響應、暫態行為、穩態行為與其於穩態峰值排斥力的模型已被分析並與實驗結果比較。 基於操作豐富的非線性行為，本研究設計與應用微機電共振開關—內嵌電性操作地微機電振撞共振器於喚醒接收器與脈波密度調變器，機械式地簡化複雜電子電路元件。此外，透過對系統進一步的了解，本研究提出間隙連續式與振撞擾動式吸引子交換器。此二吸引子交換器透過不同操作原理對元件施加擾動，於開迴路狀況下控制一非線性元件於多穩態條件下之運動狀態。這些結果促進了微機電振撞共振器與共振開關之理解和進步，為開發高性能共振開關與擾動式非線性元件控制奠定了基礎。 | zh_TW |
| dc.description.abstract | In previous few decades, various micromechanical structures and systems that utilize parts with mechanical vibro-impact have been proposed and developed, including vibro-impact energy harvesters, impact actuators, inertial switch, just to name a few. In particular, the tapping-mode atomic force microscopy (AFM) and radio frequency (RF) switch are two of great importance invention in which the AFM spurred on the development of nanoscience and nanotribology while RF switch become the key component on the wireless communications/production test supporting the integration of multiple radios/device that use a single antenna/instrument. Although, some of the underlying mechanism already developed in previous works, there is a gap to develop micro-electro-mechanical systems (MEMS) resoswitch, a particular case of MEMS vibro-impact resonators that incorporate with electrical hot-switching operation, as the device’s dimension shrinks day by day.
This work delves into the MEMS vibro-impact resonator under periodic excitation to enhance the understanding of its system response further, motivated by the need for optimizing of the device performance and nonlinear behavior of MEMS resoswitches. Utilizing the CMOS-MEMS process platform, this work theoretically, numerically and experimentally examines the nonlinearity of a folded-beam comb-driven vibro-impact resonator. Based on a 1-DOF lumped governing equation, the work predicts, through the method of averaging and SIMULINK system-level simulation platform, the tapping mode frequency response, transient motion and steady-state peak repulsive force. These predictions are compared to experimental results and show a good agreement. Nevertheless, this work designs, evaluates and develops two novel components— all-mechanical pulse density modulator and attractor exchangers. By leveraging the complex nonlinear behavior, the designed resoswitch is implemented as a pulse density modulator to simplify intricate electronic circuit components mechanically. Additionally, this work proposes innovative devices, namely, gap-continuous and vibro-impact perturbation attractor exchangers. These attractor exchangers control the state of nonlinear devices in a multi-stable region under open-loop operations through distinct operating principles. These findings advance the understanding of MEMS vibro-impact resonators and resoswitch, laying the groundwork for the development of high-performance resoswitch and perturbation-based control of nonlinear devices. | en |
| dc.description.provenance | Submitted by admin ntu (admin@lib.ntu.edu.tw) on 2026-01-27T16:14:47Z No. of bitstreams: 0 | en |
| dc.description.provenance | Made available in DSpace on 2026-01-27T16:14:47Z (GMT). No. of bitstreams: 0 | en |
| dc.description.tableofcontents | 口試委員審定書 i
致謝 ii 摘要 xii Abstract xiv Contents xvi List of Figures xxii List of Tables xlvi List of Abbreviations xlviii List of Notations and Symbols li VITA lxv 1 General Introduction 1 1.1 Motivation and Objectives 5 1.2 Dissertation Organization 7 2 Foundations and Background 10 2.1 Introduction 10 2.2 Characteristics and Analysis Tools 13 2.2.1 Model and Behavior Representation 13 2.2.2 Analysis Tools for Specific Parameters 16 2.2.2.1 Time Series and Phase Portraits 16 2.2.2.2 Poincaré Map 18 2.2.3 Analysis Tools for Varying Parameters 19 2.2.3.1 Frequency Response and Bifurcation Diagram 20 2.2.3.2 Basins of Attraction 23 2.2.4 The Effect of Intrinsic Nonlinearity in MEMS Vibro-impact Resonators 26 2.3 Interaction Force Formulation 27 2.3.1 Classical Contact Models 29 2.3.1.1 Rigid Contact (The Coefficient of Restitution) 32 2.3.1.2 Elastic and Inelastic Contact (w/o or w/ Dampers) 33 2.3.1.3 Hertz Model 35 2.3.2 Modified Hertz Contact Models 37 2.3.2.1 JKR Model 37 2.3.2.2 DMT Model 38 2.3.2.3 Intermolecular Pair Potentials for Adhesive Contact 39 2.3.2.4 Amendments and Remarks 41 2.4 Analytical and Numerical Method 45 2.4.1 Analytical Approximation Methods 47 2.4.2 Finite Difference and Finite Element Methods 49 2.4.3 Parameter Continuation Method 52 2.5 Micromechanical Vibro-Impact Applications 53 2.5.1 Tapping-mode Atomic Force Microscope (AFM) 53 2.5.2 Impact Microactuators 57 2.5.3 Impacting Energy Harvesters 59 2.5.4 Vibro-impact Resonators and Resoswitches (Resonant Switches) 62 2.5.5 RF Switches and Inertial Force Switches 65 2.6 Discussion and Conclusion 67 3 Developments on Dynamical Modeling 70 3.1 Introduction 70 3.2 Device Design, Implementation, and Operation 74 3.2.1 Comb-driven Folded-beam Resonator 74 3.2.2 Device Implementation 76 3.2.3 Linear Operation 83 3.3 Modeling of Resoswitches 89 3.3.1 Contact Surface Interaction Force and Contact Area 89 3.3.2 Stiffness and Damping Nonlinearities 94 3.3.3 Electrical Contact Resistance and Material Selection 97 3.3.4 The Effect of the Back-end RC Circuit 99 3.4 Theoretical Analysis of Resoswitches 104 3.4.1 Numerical simulation Set-up 104 3.4.2 Force-Distance Plot 108 3.4.3 Hot Switching Responses 109 3.4.4 Frequency Responses 112 3.4.5 Steady-State Peak Repulsive Force 115 3.5 Device Characterization 119 3.5.1 Measurement Set-up 119 3.5.2 Ring-Down Responses 122 3.5.3 Frequency Domain Response and Electrical Model 123 3.5.4 Forced Time-Transient Responses 130 3.5.5 Hot Switching Output 133 3.6 Discussion 137 3.6.1 Influence of Effective Q on Contact Force and Switching Behavior 137 3.6.2 Impact of Period-Doubling on Contact Force and Switching Voltage 139 3.6.3 Resoswitch Modulation Techniques for Communication Applications 140 3.6.4 The Role of Viscoelastic Damping in Phase Response 143 3.6.5 Contact Material Considerations 143 3.7 Conclusion 144 4 Developments on MEMS All-mechanical Circuits 146 4.1 Resoswitch-embedded Wake-up Receiver 146 4.1.1 Introduction 146 4.1.2 Resonant Switch as a Filtering Amplifier 148 4.1.3 Structure and Operation 149 4.1.4 Experimental Results 150 4.1.5 Conclusions 153 4.2 Pulse Density Modulator 155 4.2.1 Introduction 156 4.2.2 Period-Doubling Bifurcation 157 4.2.3 Structure and Operation 159 4.2.4 Experimental Results 159 4.2.5 Conclusions 161 5 Developments on MEMS Attractor Exchangers 163 5.1 Gap-Continuation Based Attractor Exchanger 163 5.1.1 Introduction 163 5.1.2 Gap-spacing Sweeping Technique 165 5.1.3 Structure and Operation 167 5.1.4 Experimental Results 167 5.1.5 Conclusions 170 5.2 Vibro-Impact Perturbation-Based Attractor Exchanger 171 5.2.1 Introduction 171 5.2.2 Vibro-impact Perturbation Technique 173 5.2.3 Structure and Operation 175 5.2.4 Experimental Results 176 5.2.5 Conclusions 178 6 Conclusions and Remarks 180 6.1 Results Summary 180 6.2 Future Research Directions 180 6.2.1 Model and Simulation Capability Improvement 181 6.2.1.1 Material Properties Investigation 181 6.2.1.2 Modal Analysis and Optimization for the Resoswitch 181 6.2.1.3 Surface Roughness and Time-Dependent Contact Physics 182 6.2.1.4 Prediction of the Maximum Peak Repulsive Force in the Transient State 182 6.2.2 Reliability and Sensitivity Improvements 183 6.2.2.1 Contact Material Engineering 183 6.2.2.2 Optimized Bleeding Circuit and Time Constant 184 6.2.2.3 Mechanical Engineering on the Output Electrode 184 6.2.3 Packaging and Integration 186 6.2.4 On-Chip Vibro-impact Perturbation-based Stiction Solver 186 Appendix A: Time and Frequency Domain Responses of Single-DOF m-b-k Systems 188 A.1 Linear Frequency Response 189 A.2 Linear Time Response and Switching Time 196 A.3 Ring-down Response 202 A.4 Beating Phenomenon and Transient Response 206 A.5 Stability of 1-DOF Linear and Nonlinear Systems 208 Appendix B: Equivalent Circuit, Two-Port Networks, Transmission, and Parameter Extraction 211 B.1 Wave Analogy for Few Types of Energy 213 B.2 Introduction to the Network Analyzer 240 B.3 Matrix Representation of the Electrical Power Wave 244 B.4 Practice, Error Source and Correction 259 B.5 Equivalent Circuit of Linear Electrostatic MEMS Resonators 271 B.6 Parameter Extraction and Initial Guess 284 B.7 Multiple Ports, Multiple DOF and Coupled Systems 288 B.8 Lorentzian Response and Application of FFT 293 Appendix C: Introduction to the Surface Interaction Forces 296 Appendix D: Characteristic of Vibro-impact Resonators 305 D.1 Parametrically Numerical Investigations 305 D.2 Periodic-Doubling Bifurcation and Comb Generation 322 D.3 Double-sided Vibro-Impact Resonator 334 Appendix E: Introduction to Perturbation Theory 344 E.1 Illustrative Example based on Asymptotic Analysis 345 E.2 Nondimensionalization Technique 350 E.3 Method of Multiple Scale 353 E.4 Method of Averaging (MOA) 360 E.5 Stability Analysis based on Slowly Varying Equation 372 E.6 Nonlinear Ring-down Envelop Equation 375 E.7 Jump-up Frequency of Duffing Oscillators 377 Appendix F: Derivation of Peak Repulsive Force Formulas and Scaling Laws 380 F.1 Governing Equation, Assumptions and Remarks 380 F.2 Main Derivation on Peak Repulsive Force Formulars 385 F.3 Arranging, Extension and Discussion 391 Appendix G: The Temperature Coefficient of Frequency and Abnormal Frequency Responses 392 G.1 TCF and TCQ of the Comb-driven Resonator 392 G.2 Influence of Parasitic Current on the Tapping-mode Frequency Response 392 Reference 396 | - |
| dc.language.iso | en | - |
| dc.subject | CMOS-MEMS | - |
| dc.subject | 振撞共振器 | - |
| dc.subject | 共振開關 | - |
| dc.subject | 吸引子交換器 | - |
| dc.subject | CMOS-MEMS | - |
| dc.subject | Vibro-impact resonator | - |
| dc.subject | Resoswitch | - |
| dc.subject | Attractor exchanger | - |
| dc.title | CMOS-MEMS振撞共振器 | zh_TW |
| dc.title | CMOS-MEMS Vibro-Impact Resonators | en |
| dc.type | Thesis | - |
| dc.date.schoolyear | 114-1 | - |
| dc.description.degree | 博士 | - |
| dc.contributor.oralexamcommittee | 張培仁;方維倫;李昇憲;李銘晃;曾聖翔;李世偉;葉勝凱 | zh_TW |
| dc.contributor.oralexamcommittee | Pei-Zen Chang;Weileun Fang;Sheng-Shian Li;Ming-Huang Li;Sheng-Hsiang Tseng;Shih-Wei Lee;Sheng-Kai Yeh | en |
| dc.subject.keyword | CMOS-MEMS,振撞共振器共振開關吸引子交換器 | zh_TW |
| dc.subject.keyword | CMOS-MEMS,Vibro-impact resonatorResoswitchAttractor exchanger | en |
| dc.relation.page | 437 | - |
| dc.identifier.doi | 10.6342/NTU202600018 | - |
| dc.rights.note | 同意授權(全球公開) | - |
| dc.date.accepted | 2026-01-20 | - |
| dc.contributor.author-college | 工學院 | - |
| dc.contributor.author-dept | 應用力學研究所 | - |
| dc.date.embargo-lift | 2026-01-28 | - |
| 顯示於系所單位： | 應用力學研究所 | |
文件中的檔案：
| 檔案 | 大小 | 格式 | |
|---|---|---|---|
| ntu-114-1.pdf | 25.84 MB | Adobe PDF | 檢視/開啟 |
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