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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 黃定洧 | zh_TW |
| dc.contributor.advisor | Ding-Wei Huang | en |
| dc.contributor.author | 黃以誠 | zh_TW |
| dc.contributor.author | Yi-Cheng Huang | en |
| dc.date.accessioned | 2025-08-21T16:09:09Z | - |
| dc.date.available | 2025-08-22 | - |
| dc.date.copyright | 2025-08-21 | - |
| dc.date.issued | 2025 | - |
| dc.date.submitted | 2025-07-31 | - |
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/99039 | - |
| dc.description.abstract | 隨著光通訊系統傳輸速率不斷提升，具備高頻寬、低功耗與高調制效率之電光調制器需求日益增加。本研究提出一種基於薄膜型鈮酸鋰 (Lithium Niobate on Insulator,LNOI) 之新型馬赫詹德調制器設計，採用狹縫波導 (Slot Waveguide) 結構，並於上方包覆高介電常數材料鈦酸鋇 (Barium Titanate, BTO) 與二氧化矽 (Silicon dioxide, SiO2) 形成複合包覆層，結合下潛式金屬電極以增強電場與光場之交互作用，藉此提升電光調制效率並拓展頻寬。
本研究首先透過 Lumerical 模擬平台進行模態分析與電場模擬，萃取有效折射率與相位變化，進一步計算調制效率 (𝑉π𝐿) 為 0.999 V·cm。接著以 RLGC 模型與傳輸線理論推導射頻參數，分析結構於 1–200 GHz 頻段內之阻抗匹配、傳播速度匹配與傳輸損耗，並量化射頻損耗對頻寬限制之影響。此外，藉由 INTERCONNECT 建立等效電路模型，模擬 NRZ 與 PAM4 調制格式下之眼圖， 評估其高速傳輸表現與消光比 (Extinction Ratio, ER)。 模擬結果顯示，本設計於 3 mm 調制長度下可達 191 GHz 的電光頻寬，並於 448 Gbps 資料速率下仍具良好眼圖開口，展現極佳的頻寬潛力與調制品質。與其他文獻中典型 LNOI 結構比較，本研究設計同時具備低 𝑉π𝐿、高頻寬與可接受之傳輸損耗，為未來應用於資料中心與矽光子平台整合之高效能電光調制器提 供可行方案。 | zh_TW |
| dc.description.abstract | With the increasing demands for high-speed and high-efficiency data transmission in optical communication systems, lithium niobate (LN)-based electro-optic modulators have attracted significant attention due to their superior modulation bandwidth and low drive voltage enabled by the Pockels effect. In this work, we propose and numerically demonstrate a high-performance thin-film lithium niobate (LNOI) Mach-Zehnder modulator (MZM) incorporating a slot waveguide structure, a composite cladding layer composed of high-permittivity Barium Titanate (BTO) and silicon dioxide (SiO2), and a sunken electrode configuration.
Through multiphysics simulations using the Lumerical platform, we extract the phase modulation efficiency and determine a half-wave voltage-length product (𝑉π𝐿) of 0.999 V·cm. The RLGC transmission line model is then applied to analyze frequency- dependent microwave properties-including impedance, group velocity, and attenuation- across the 1–200 GHz range. We quantify both the velocity mismatch and microwave loss limitations on modulation bandwidth. Subsequently, compact model parameters are used in INTERCONNECT to construct a complete modulator circuit, and time- domain eye diagram simulations are performed for both NRZ and PAM4 signaling formats. The proposed design achieves a 3-dB EO bandwidth of 191 GHz for a 3-mm modulation length, with a clear eye opening observed at 112 Gbps under PAM4 modulation. Compared to representative state-of-the-art LNOI modulators in the literature, our device simultaneously exhibits a low 𝑉π𝐿 , wide bandwidth, and acceptable insertion loss, demonstrating strong potential for integration in future high- speed silicon photonics and data center applications. | en |
| dc.description.provenance | Submitted by admin ntu (admin@lib.ntu.edu.tw) on 2025-08-21T16:09:09Z No. of bitstreams: 0 | en |
| dc.description.provenance | Made available in DSpace on 2025-08-21T16:09:09Z (GMT). No. of bitstreams: 0 | en |
| dc.description.tableofcontents | 致謝 .............................................................................................................................. I
中文摘要 ..................................................................................................................... II ABSTRACT................................................................................................................III 目次 ........................................................................................................................... IV 圖次 .......................................................................................................................... VII 表次 ........................................................................................................................... XI 第 1 章 緒論 ...........................................................................................................1 1.1 研究背景與動機 ...........................................................................................1 1.2 論文架構 .......................................................................................................3 第 2 章 背景理論與數值方法 ...............................................................................4 2.1 基礎理論 .......................................................................................................4 2.1.1 馬克斯威爾方程式 (Maxwell’s Equations) .........................................4 2.1.2 波動方程式 (Wave Equations) .............................................................5 2.1.3 電光調制器 (Electric-Optic Modulator)...............................................6 2.1.4 鈮酸鋰薄膜 (Thin-film Lithium Niobate) ............................................8 2.1.5 線性電光效應 (Electro-Optic Effect).................................................11 2.1.6 折射率橢球 (Index ellipsoid) .............................................................13 2.1.7 傳輸線 (Transmission Line) 的等效模型 (RLGC model)................17 2.1.8 調制器的效能指數 (Figure of Merit, FoM) .......................................20 2.2 數值方法 .....................................................................................................22 2.2.1 載子傳輸求解器 (Charge Transport Solver)......................................23 2.2.2 有限元素特徵模態法 (Finite Element Eigenmode Method, FEEM) .23 2.2.3 有限差分特徵模態 (Finite Difference Eigenmode, FDE) 求解器....24 第3章 文獻回顧 .....................................................................................................27 3.1 基於蝕刻狹縫與超薄矽膜之高性能鈮酸鋰薄膜電光調制器 ..................27 3.2 具下潛式電極結構之鈮酸鋰薄膜調制器之設計與性能分析 ..................29 3.3 具低半波電壓長度積之寬頻鈮酸鋰-鈦酸鋇混合型調制器最佳化設計..31 3.4 具高介電常數包覆層之高效率鈮酸鋰薄膜電光調制器 ..........................33 第4章 鈮酸鋰薄膜電光調制器 .............................................................................35 4.1 元件設計流程 .............................................................................................35 4.2 元件結構與原理分析 .................................................................................36 4.2.1 狹縫波導結構 (Slot Waveguide)........................................................37 4.2.2 下潛式電極結構 (Sunken Electrode) .................................................40 4.2.3 包覆層材料 (Cladding Material) ........................................................43 4.2.4 複合型包覆層 (Cladding Material: Composite Structures) ................47 4.2.5 電極結構設計 (Electrode Structure Design) ......................................52 4.3 電性模擬 (Electrical Simulation)................................................................62 4.4 光學模擬 (Optical Simulation) ...................................................................63 4.4.1 調制性能指標 (Modulation Metrics) .................................................65 4.5 射頻傳輸線之特性模擬 (RF Transmission Line Properties Simulation) ...72 4.5.1 RLGC 參數.........................................................................................72 4.5.2 群折射率 (Group Index).....................................................................78 4.5.3 射頻損耗 (RF Loss) ...........................................................................80 4.5.4 阻抗匹配 (Impedance Matching) .......................................................82 4.5.5 3-dB 頻寬 (3-dB bandwidth) .............................................................84 4.6 電路模擬 (Circuit Simulation)....................................................................87 4.7 與參考文獻中的馬赫-詹德型調制器效能比較 .........................................91 第5章 結語與未來展望 .........................................................................................92 5.1 結語 .............................................................................................................92 5.2 未來展望 .....................................................................................................92 參考文獻 ....................................................................................................................94 | - |
| dc.language.iso | zh_TW | - |
| dc.subject | 鈮酸鋰薄膜 | zh_TW |
| dc.subject | 電光調制器 | zh_TW |
| dc.subject | 馬赫詹德干涉儀 | zh_TW |
| dc.subject | LNOI | zh_TW |
| dc.subject | 鈦酸鋇包覆層 | zh_TW |
| dc.subject | 射頻損耗 | zh_TW |
| dc.subject | 狹縫波導 | zh_TW |
| dc.subject | 阻抗匹配 | zh_TW |
| dc.subject | 傳播速度匹配 | zh_TW |
| dc.subject | 眼圖 | zh_TW |
| dc.subject | Velocity Matching | en |
| dc.subject | Lithium Niobate | en |
| dc.subject | Electro-Optic Modulator | en |
| dc.subject | Mach-Zehnder Interferometer | en |
| dc.subject | LNOI | en |
| dc.subject | BTO Cladding | en |
| dc.subject | Slot Waveguide | en |
| dc.subject | Impedance Matching | en |
| dc.subject | Eye Diagram | en |
| dc.subject | RF Loss | en |
| dc.title | 高性能馬赫詹德行波電極型鈮酸鋰薄膜電光調制器 | zh_TW |
| dc.title | High-Performance Thin-film Lithium Niobate Mach-Zehnder Electro-Optic Modulator with Traveling-wave Electrodes | en |
| dc.type | Thesis | - |
| dc.date.schoolyear | 113-2 | - |
| dc.description.degree | 碩士 | - |
| dc.contributor.oralexamcommittee | 林建中;樊俊遠 | zh_TW |
| dc.contributor.oralexamcommittee | Chien-Chung Lin;Chun-Yuan Fan | en |
| dc.subject.keyword | 鈮酸鋰薄膜,電光調制器,馬赫詹德干涉儀,LNOI,鈦酸鋇包覆層,射頻損耗,狹縫波導,阻抗匹配,傳播速度匹配,眼圖, | zh_TW |
| dc.subject.keyword | Lithium Niobate,Electro-Optic Modulator,Mach-Zehnder Interferometer,LNOI,BTO Cladding,Slot Waveguide,Impedance Matching,Velocity Matching,RF Loss,Eye Diagram, | en |
| dc.relation.page | 100 | - |
| dc.identifier.doi | 10.6342/NTU202500270 | - |
| dc.rights.note | 未授權 | - |
| dc.date.accepted | 2025-08-04 | - |
| dc.contributor.author-college | 電機資訊學院 | - |
| dc.contributor.author-dept | 光電工程學研究所 | - |
| dc.date.embargo-lift | N/A | - |
| 顯示於系所單位： | 光電工程學研究所 | |
文件中的檔案：
| 檔案 | 大小 | 格式 | |
|---|---|---|---|
| ntu-113-2.pdf 未授權公開取用 | 13.04 MB | Adobe PDF |
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