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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 彭隆瀚 | zh_TW |
| dc.contributor.advisor | Lung-Han Peng | en |
| dc.contributor.author | 王俊閔 | zh_TW |
| dc.contributor.author | Jun-Min Wang | en |
| dc.date.accessioned | 2025-08-18T01:04:01Z | - |
| dc.date.available | 2025-08-19 | - |
| dc.date.copyright | 2025-08-15 | - |
| dc.date.issued | 2025 | - |
| dc.date.submitted | 2025-08-06 | - |
| dc.identifier.citation | 參考文獻
[1] "LED Chips - Market Share Analysis, Industry Trends & Statistics, Growth Forecasts (2025 - 2030)." Mordor Intelligence. 檢自 https://www.gii.tw/report/moi1641966-led-chips-market-share-analysis-industry-trends.html [2] S. Nakamura, S. Pearton, and G. Fasol, "The blue laser diode. The complete story," Measurement Science and Technology, Vol. 12, p. 218 (2001). [3] T. Minami, "Transparent conducting oxide semiconductors for transparent electrodes," Semiconductor science and technology, Vol. 20, p. S35 (2005). [4] B. Durazzo and B. Durazzo, "Contemporary applications of light-emitting diodes in horticulture: A review on LED lighting technology and the use of wavelength band and irradiance modulation to study plant photobiology," Preprint, Vol. 10 (2021). [5] C. Franchini, M. Reticcioli, M. Setvin, and U. Diebold, "Polarons in materials," Nature Reviews Materials, Vol. 6, pp. 560–586 (2021). [6] I. Chatratin et al., "Role of point defects in the electrical and optical properties of In 2 O 3," Physical Review Materials, Vol. 3, p. 074604 (2019). [7] J. B. Varley, A. Janotti, C. Franchini, and C. G. Van de Walle, "Role of self-trapping in luminescence and p-type conductivity of wide-band-gap oxides," Physical Review B—Condensed Matter and Materials Physics, Vol. 85 (2012). [8] S. Lany and A. Zunger, "Dopability, intrinsic conductivity, and nonstoichiometry of transparent conducting oxides," Physical Review Letters, Vol. 98, p. 045501-3 (2007). [9] S. Li, J. Luo, J. Liu, and J. Tang, "Self-trapped excitons in all-inorganic halide perovskites: fundamentals, status, and potential applications," The journal of physical chemistry letters, Vol. 10, pp. 1999–2007 (2019). [10] E. Hecht, Optics. Pearson Education India,p437 (2012). [11] J. Wu, L. Register, and E. Rosenbaum, "Trap-assisted tunneling current through ultra-thin oxide," in 1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No. 99CH36296): IEEE, pp. 389–395,(1999). [12] H. Ghazal and N. Sohail, "Sputtering Deposition," in Thin Films-Deposition Methods and Applications: IntechOpen,p.12 (2022). [13] S. Heil, "Plasma-assisted atomic layer deposition of metal oxides and nitrides,"p.7 (2008). [14] 蕭健男 et al., "PEALD 系統研製," 真空科技, Vol. 22, pp. 39–44 (2009). [15] 李柏廷, "電漿輔助型原子層沉積之發光二極體特性研究," 臺灣大學光電工程學研究所學位論文,Vol.2014, p. 19 (2014). [16] F. M. Altincicek, Synthesis And Characterization Of Quasi-Two-Dimensional Chromium Sulfides. The University of North Dakota,p.8 (2019). [17] W.-J. Chen et al., "Influence of Nitrogen Annealing Treatment on Optical, Microstructural, and Chemical Properties of Ga2O3 Film Grown by Plasma-Enhanced Atomic Layer Deposition," The Journal of Physical Chemistry C, Vol. 127 (2023). [18] F. H. Wang, K. N. Chen, C. M. Hsu, M. C. Liu, and C. F. Yang, "Investigation of the Structural, Electrical, and Optical Properties of the Nano-Scale GZO Thin Films on Glass and Flexible Polyimide Substrates," Nanomaterials (Basel), Vol. 6 (2016) [19] J. Mitrić, "Properties and characterization of rare-earth-activated phosphors," in Rare-Earth-Activated Phosphors: Elsevier, pp. 43–58 (2022). [20] S. Liu and Y. Wang, "Application of AFM in microbiology: a review," Scanning, Vol. 32, pp. 61–73 (2010). [21] 侯秉宏, "於多晶矽基板上生長GaOx之發光二極體特性研究," 碩士, 光電工程學研究所, 國立臺灣大學 (2021). [22] W. Yong-qiang, Z. Tai-ping, C. Xiao-ming, M. Zhen-chang, Z. Wan-hua, and Q. Guo-gang, "Electroluminescence from Indium Tin Oxide Film/Nanoscale Si Oxide/p-Si Structure," Chinese physics letters, Vol. 16, p. 605 (1999). [23] 謝䔶如, "在多晶矽基板上以剝離成形法製成具分佈式布拉格反射鏡之矽基氧化鎵發光元件," 碩士, 光電工程學研究所, 國立臺灣大學 (2022). [24] Y.-H. Peng, C.-C. He, Y.-J. Zhao, and X.-B. Yang, "Multi-peak emission of In2O3 induced by oxygen vacancy aggregation," Journal of Applied Physics, Vol. 133 (2023). | - |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/98609 | - |
| dc.description.abstract | 本研究主要探討了以氧氮化鎵(GaON)與氧化銦(In2O3)色心發光元件所製的色心自發光白光二極體。先採用 250 °C的電漿輔助原子層沉積系統(PE-ALD)調整 O₂/NH₃ 流量控制缺陷組態，並以 XPS、PL解析整體的發光效果。結果顯示，多氧空缺可形成覆蓋 400~800 nm 的連續能階，配合氧化銦錫(ITO:Indium tin oxide) 與氧化鎵摻雜鋅(GZO:Ga-doped ZnO)透明導電層及 Fabry-Perot 共振腔設計，可以大幅度改變整體的發光光譜，同時於在厚度約10nm下的 GaON 薄膜觀測到了大量的負微分電阻情形，此類情形可以使用穿隧效應來解釋，並且使用不同的基板結構配合AFM進行量測驗證。及在較高厚度下的單一負微分電阻，證實缺陷捕獲釋放載子所誘發的發光行為。綜合以上，本研究說明 GaON、In2O3寬能隙半導體色心白光發光機制與缺陷光譜，提供了更多種類型的全彩光譜選擇。
本文主要分為五個章節，第一章講述了LED簡介及研究動機，最後提到了整體論文的大綱。第二章講述了LED的發光原理及本次研究的色心發光原理、共振腔模型。第三章介紹了本次實驗使用的機台，包含了濺鍍機，電漿輔助原子層沉積系統。第四章節說明了本次元件的製作方法及透明導電薄膜的量測，最後第五章說明了整體的量測系統，搭配了量測數據進而驗證整體內容的正確性。最後一章為結論與未來展望，希望以此結構讓白光LED能有更進一步的發展。 | zh_TW |
| dc.description.abstract | This study investigates color-center light-emitting diodes fabricated from gallium oxynitride (GaON) and indium oxide (In₂O₃). A 250 °C Plasma-Enhanced Atomic Layer Deposition (PE-ALD) process was used to modulate defect configurations by tuning the O₂/NH₃ flow ratio, and the resulting optical properties were systematically analyzed with X-ray photoelectron spectroscopy (XPS), photoluminescence (PL) spectroscopy.
The results show that aggregated oxygen vacancies generate a quasi-continuous defect band spanning a spectral range from 400 to 800 nm. When combined with indium–tin oxide (ITO) and Ga-doped ZnO (GZO) transparent conductive layers and a Fabry–Perot resonant-cavity design, the overall emission spectrum can be extensively tailored. In ~10 nm-thick GaON films, pronounced many negative differential resistance (NDR) was observed,this behavior is attributed to tunneling effects and was verified by AFM measurements on devices with different substrate architectures. Large film thicknesses, a single NDR peak is shown to be related to vacancy-mediated carrier capture-and-release–induced luminescence in summary. These findings elucidate the white-light emission mechanism and defect spectra of wide-band-gap GaON and In₂O₃ color-center devices, offering an expanded palette of full-color spectral options. This thesis is organized into five chapters. Chapter 1 provides an introduction to LEDs, outlines the research motivation, and presents the overall framework of the dissertation. Chapter 2 details the luminescence mechanisms of LEDs, focusing on the color-center emission process examined in this work and the associated Fabry–Perot cavity model. Chapter 3 describes the experimental equipment employed, including the sputtering system and the plasma-enhanced atomic layer deposition (PE-ALD) system. Chapter 4 explains the device fabrication procedures and the characterization of the transparent conductive films. Chapter 5 discusses the comprehensive measurement setup and analyzes the collected data to verify the validity of the study. The final section offers conclusions and future prospects, aiming to advance the development of white-light LEDs based on the proposed structure. | en |
| dc.description.provenance | Submitted by admin ntu (admin@lib.ntu.edu.tw) on 2025-08-18T01:04:01Z No. of bitstreams: 0 | en |
| dc.description.provenance | Made available in DSpace on 2025-08-18T01:04:01Z (GMT). No. of bitstreams: 0 | en |
| dc.description.tableofcontents | 摘要.........................................................................................................i
Abstract............................................................................................... iii 目次........................................................................................................v 圖次.................................................................................................... viii 表次.......................................................................................................xi 第一章 緒論 ..................................................................................1 1.1 簡介 .................................................................................................. 1 1.2 研究動機與目的 .............................................................................. 2 1.3 論文內容概述 .................................................................................. 3 第二章 色心輻射元件發光原理..................................................4 2.1 發光二極體 ...................................................................................... 4 2.2 色心發光原理 .................................................................................. 4 2.3 Fabry-Perot 共振腔原理.................................................................... 8 2.4 氧化物的穿隧效應 ........................................................................ 10 第三章 實驗機台介紹................................................................13 3.1 濺鍍機原理 .................................................................................... 13 3.1.1 濺鍍機種類 .................................................................................... 15 3.2 原子層沉積系統概述 .................................................................... 16 3.2.1 Thermal ALD.................................................................................. 17 3.2.2 Radical enhanced ALD................................................................... 17 3.2.3 Direct plasma ALD......................................................................... 18 3.2.4 Remote plasma ALD ...................................................................... 19 3.2.5 ALD 成長機制與參數................................................................... 21 3.3 PEALD 材料分析 ............................................................................. 23 3.3.1 X 射線光電子能譜 XPS（X-ray Photoelectron Spectroscopy）. 23 3.3.2 光致螢光分析( Photoluminescence，PL ).................................... 27 3.3.3 原子力顯微鏡技術(Atomic Force Microscope，AFM)............... 30 第四章 發光二極體元件製作與分析........................................33 4.1 元件製作流程 ................................................................................ 33 4.2 透明導電薄膜 ................................................................................ 41 4.2.1 電阻率量測 .................................................................................... 41 4.2.2 穿透率量測 .................................................................................... 43 第五章 二極體電性、光譜量測分析........................................45 5.1 系統量測架構 ................................................................................ 45 5.1.1 Keithley 238 電性量測系統 .......................................................... 45 5.1.2 脈衝電壓光譜量測系統 ................................................................ 46 5.1.3 4155C 電性量測系統..................................................................... 47 5.2 發光二極體分析 ............................................................................ 48 5.2.1 純 GaON 穿隧元件........................................................................ 48 5.2.2 純 ITO 元件.................................................................................... 50 5.2.3 PE-ALD 環境對 GaON 影響......................................................... 52 5.2.4 缺陷電洞捕捉電子模型 ................................................................ 56 5.2.5 改變上方透明導電薄膜 ................................................................ 60 5.2.6 In2O3主動層元件........................................................................... 61 第六章 結論與未來展望.............................................................64 參考文獻 ......................................................................................65 | - |
| dc.language.iso | zh_TW | - |
| dc.subject | 發光二極體 | zh_TW |
| dc.subject | 氮氧化鎵 | zh_TW |
| dc.subject | 穿隧效應 | zh_TW |
| dc.subject | LED | en |
| dc.subject | GaON | en |
| dc.subject | quantum tunneling | en |
| dc.title | 電漿原子層沉積之氮氧銦鎵薄膜與發光二極體特性研究 | zh_TW |
| dc.title | Characterization of InGaON Films and Light Emitting Diodes Grown by the Plasma-Enhanced Atomic Layer Deposition Method | en |
| dc.type | Thesis | - |
| dc.date.schoolyear | 113-2 | - |
| dc.description.degree | 碩士 | - |
| dc.contributor.oralexamcommittee | 葉伯淳;黃玉林 | zh_TW |
| dc.contributor.oralexamcommittee | Bo-Chun Yeh;Yue-Lin Huang | en |
| dc.subject.keyword | 發光二極體,穿隧效應,氮氧化鎵, | zh_TW |
| dc.subject.keyword | LED,quantum tunneling,GaON, | en |
| dc.relation.page | 67 | - |
| dc.identifier.doi | 10.6342/NTU202503429 | - |
| dc.rights.note | 同意授權(全球公開) | - |
| dc.date.accepted | 2025-08-09 | - |
| dc.contributor.author-college | 電機資訊學院 | - |
| dc.contributor.author-dept | 光電工程學研究所 | - |
| dc.date.embargo-lift | 2025-08-19 | - |
| 顯示於系所單位： | 光電工程學研究所 | |
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