請用此 Handle URI 來引用此文件：
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/97803完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 周必泰 | zh_TW |
| dc.contributor.advisor | Pi-Tai Chou | en |
| dc.contributor.author | 鄭靜暄 | zh_TW |
| dc.contributor.author | Ching-Hsuan Cheng | en |
| dc.date.accessioned | 2025-07-17T16:04:34Z | - |
| dc.date.available | 2025-07-18 | - |
| dc.date.copyright | 2025-07-17 | - |
| dc.date.issued | 2025 | - |
| dc.date.submitted | 2025-07-08 | - |
| dc.identifier.citation | (1) E. I. A. U.S. power generation from renewables. 2023.
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/97803 | - |
| dc.description.abstract | 本論文探討在硫化鉛膠體量子點 (PbS CQD) 太陽能電池中，導入兩種結構相似的近紅外光 (NIR) 非富勒烯受體 (NFA) —BTPV-4F 與 BATPV-4F，並結合非富勒烯供體 PTB7-Th 及富勒烯受體PC71BM組成本體異質結型電洞傳輸層 (BHJ-HTL)。NFAs 除了能擴展太陽光譜的NIR吸收範圍，亦可形成三維電荷傳輸通道，提升裝置的光電流(JSC)。GIWAXS 與 AFM/KPFM 結果顯示，於 HTL 中引入 NFAs 並經由溶劑蒸氣退火 (SVA) 後處理，可有效縮短 π–π 堆疊距離並延長晶體干涉長度(CCL)，使 NFA 分子排列呈現長程有序的 face-on 堆疊，來縮短分子間電荷跳躍距離以促進電洞傳輸。此外，由X 射線光電子能譜 (XPS) 推測，PbS CQD 表面缺陷的鈍化主要來自於 Pb–S (BTPV-4F) 及 Pb–O ( BATPV-4F) 之間的相互作用。基態螢光光譜 (PL) 與飛秒瞬態吸收光譜 (fs-TA) 結果亦驗證NFAs 的導入可顯著提升 PbS CQD 激子解離並抑制非輻射複合，以達成 PbS/BHJ-HTL 界面鈍化，進而有效提升元件之開路電壓 (VOC) 與填充因子 (FF)。最終，採用 BTPV-4F NFA BHJ-HTL的 PbS CQD太陽能電池展現出高達 14.02 % 的光電轉換效率，亦具備優異的環境穩定性與熱穩定性。 | zh_TW |
| dc.description.abstract | This study investigates the bulk heterojunction (BHJ)-type hole-transporting layer (HTL) of lead sulfide colloidal quantum dot (PbS CQD) solar cells via incorporating two structurally similar near-infrared (NIR) non-fullerene acceptors (NFAs), BTPV-4F and BATPV-4F, blended with non-fullerene polymer donor PTB7-Th and fullerene acceptor PC71BM as hole-transporting materials (HTMs). In addition to broadening the NIR absorption range of the solar spectrum, NFAs could also construct three-dimensional charge transport channels that enhance the photocurrent (JSC) of the devices. Results from the Grazing-Incidence Wide-Angle X-ray Scattering (GIWAXS) and the Atomic Force Microscopy / Kelvin Probe Force Microscopy (AFM/KPFM) reveal that incorporating NFAs into the HTL, followed by the solvent vapor annealing (SVA) treatment, effectively reduces the π–π stacking distance and increases the crystal coherence length (CCL). SVA treatment promotes the NFA molecules’ long-range ordered face-on orientation, thereby shortening intermolecular charge hopping distances and facilitating hole transport. Moreover, we suggest that the passivation of surface defects on PbS CQDs is primarily achieved through Pb–S (with BTPV-4F) and Pb–O (with BATPV-4F) interactions through X-ray Photoelectron Spectroscopy (XPS) analysis. Steady-state photoluminescence (PL) spectrum and Femtosecond-Transient Absorption Spectroscopy (fs-TA) further confirm that the incorporation of NFAs significantly enhances exciton dissociation of PbS CQDs and suppresses non-radiative recombination, contributing to interfacial defect passivation at the PbS/BHJ-HTL interface. The above evidence shows noteworthy improvements in the open-circuit voltage (VOC) and fill factor (FF) of devices. As a result, the PbS CQD solar cell employing BTPV-4F NFA for BHJ-HTL achieves a high power conversion efficiency (PCE) of 14.02 %, along with excellent environmental and thermal stability. | en |
| dc.description.provenance | Submitted by admin ntu (admin@lib.ntu.edu.tw) on 2025-07-17T16:04:34Z No. of bitstreams: 0 | en |
| dc.description.provenance | Made available in DSpace on 2025-07-17T16:04:34Z (GMT). No. of bitstreams: 0 | en |
| dc.description.tableofcontents | 口試委員議定書 i
致謝 ii 中文摘要 iii Abstract iv Content v List of Figures vii List of Tables xi Chapter 1. Introduction 1 1.1 Energy Crisis 1 1.2 Evolution of Solar Cell Technologies 3 1.2.1 First Generation: Crystalline Silicon Solar Cells 3 1.2.2 Second Generation: Thin-Film Solar Cells 3 1.2.3 Third Generation: Emerging Photovoltaic Technologies 4 1.3 Quantum Dot Properties and Synthesis Control 6 1.3.1 Size and Quantum Confinement Effects of Quantum Dots 6 1.3.2 Mechanism of Multiple Exciton Generation (MEG) 8 1.3.3 Synthesis Control of Quantum Dots 10 1.4 Quantum Dots Ligand Exchange Engineering 14 1.4.1 Solid-State Ligand Exchange 14 1.4.2 Solution-Phase Ligand Exchange 16 1.5 The Principle of Solar Cell 18 1.5.1 Solar Spectrum 18 1.5.2 Solar Cell Parameters 21 1.5.3 Working Principles of Quantum Dot Solar Cells 23 1.6 Quantum Dot Solar Cell Architectures Evolution 27 1.6.1 Quantum-Dot-Sensitized Solar Cell (QDSSCs) 27 1.6.2 Schottky CQD Solar Cells 28 1.6.3 Heterojunction CQD Solar Cells 31 1.6.4 Homojunction-like CQD Solar cells 34 1.7 Development of Polymer-Based Hole Transport Layers 40 1.8 The Development of Non-fullerene Acceptors 48 1.8.1 IDIC-Based NFAs 49 1.8.2 ITIC-based NFA 49 1.8.3 Y6-based NFA 51 1.9 Ternary Organic Solar Cells (OSCs) 60 1.10 Motivation 63 Chapter 2. Experiment Part 65 2.1 Experiment Materials 65 2.2 PbS Quantum Dots Synthesis 66 2.3 PbS CQD Active Layer Ligand Exchange 67 2.4 Synthesis of IZO Films 68 2.5 Device Fabrication of PbS QD Solar Cell 69 2.6 Analysis Instruments 71 2.6.1 PbS QD & HTL Thin Films Analysis 71 2.6.2 Solar Cell Device Measurement 75 Chapter 3. Result and Discussion 81 3.1 Non-fullerene Electron Acceptors 81 3.1.1 Synthesis of Non-fullerene Electron Acceptors 82 3.1.2 Non-fullerene Electron Acceptors: Properties and Characterization 84 3.2 Lead Sulfide Colloidal Quantum Dots (PbS CQD) Properties and Characterization 87 3.3 Bulk Heterojunction-type Hole Transport Layer, BHJ-HTL 89 3.3.1 Absorption Spectra and Band Alignment Design of BHJ-HTL 89 3.3.2 2D-GIWAXS Analysis of BHJ-HTL 93 3.3.3 AFM/KPFM Analysis of BHJ-HTL 98 3.3.4 XPS Analysis of BHJ-HTL Interactions 102 3.4 PbS CQD BHJ-HTL Solar Cell Device Performance and Spectral Dynamic Analysis 109 3.4.1 Photovoltaic Performance 109 3.4.2 External Quantum Efficiency Improvement 112 3.4.3 Space-charge-limited-current (SCLC) Analysis 114 3.4.4 Electrochemical Impedance Spectroscopy (EIS) Analysis 116 3.4.5 Photoluminescence of PbS CQD with Different BHJ-HTL Effect 118 3.4.6 Femto-second Transient Absorption (fs-TA) Analysis 121 3.4.7 Device Stability 131 Chapter 4. Conclusion 132 Reference 134 | - |
| dc.language.iso | en | - |
| dc.subject | 非富勒烯受體 | zh_TW |
| dc.subject | 電荷轉移 | zh_TW |
| dc.subject | 飛秒瞬態吸收光譜 | zh_TW |
| dc.subject | 掠入射廣角 X 射線散射 | zh_TW |
| dc.subject | 電洞傳輸層 | zh_TW |
| dc.subject | 硫化鉛膠體量子點太陽能電池 | zh_TW |
| dc.subject | femtosecond transient absorption spectroscopy | en |
| dc.subject | hole-transporting layer | en |
| dc.subject | non-fullerene acceptors | en |
| dc.subject | PbS CQDs solar cells | en |
| dc.subject | GIWAXS analysis | en |
| dc.subject | charge transfer | en |
| dc.title | 透過在電洞傳輸層中引入近紅外光非富勒烯受體以實現對硫化鉛量子點本體異質接面太陽能電池的協同鈍化 | zh_TW |
| dc.title | Synergistic Passivation of PbS Quantum Dot Bulk-heterojunction Solar Cell via Incorporating NIR Non-fullerene Acceptors into Hole-transporting Layer | en |
| dc.type | Thesis | - |
| dc.date.schoolyear | 113-2 | - |
| dc.description.degree | 碩士 | - |
| dc.contributor.oralexamcommittee | 吳典霖;陳協志 | zh_TW |
| dc.contributor.oralexamcommittee | Tien-Lin Wu;Hsieh-Chih Chen | en |
| dc.subject.keyword | 硫化鉛膠體量子點太陽能電池,非富勒烯受體,電洞傳輸層,掠入射廣角 X 射線散射,飛秒瞬態吸收光譜,電荷轉移, | zh_TW |
| dc.subject.keyword | PbS CQDs solar cells,non-fullerene acceptors,hole-transporting layer,GIWAXS analysis,femtosecond transient absorption spectroscopy,charge transfer, | en |
| dc.relation.page | 143 | - |
| dc.identifier.doi | 10.6342/NTU202501544 | - |
| dc.rights.note | 未授權 | - |
| dc.date.accepted | 2025-07-08 | - |
| dc.contributor.author-college | 理學院 | - |
| dc.contributor.author-dept | 化學系 | - |
| dc.date.embargo-lift | N/A | - |
| 顯示於系所單位： | 化學系 | |
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