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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 白奇峰 | zh_TW |
| dc.contributor.advisor | Chi-Feng Pai | en |
| dc.contributor.author | 彭智晨 | zh_TW |
| dc.contributor.author | Chih-Chen Peng | en |
| dc.date.accessioned | 2025-06-18T16:11:05Z | - |
| dc.date.available | 2025-06-19 | - |
| dc.date.copyright | 2025-06-18 | - |
| dc.date.issued | 2025 | - |
| dc.date.submitted | 2025-06-06 | - |
| dc.identifier.citation | References
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/97448 | - |
| dc.description.abstract | 在現代與新興電子系統中,利用千兆赫茲(GHz)頻率的磁性元件至關重要。以積體電感為例,它可以儲存磁能,是無線通訊系統中不可或缺的元件。隨著系統對更高操作頻率與更小元件面積的需求日益提升,電感的設計也需要更加優化,而磁芯材料的導入正是一項可行的解決方案。此外,磁阻式隨機存取記憶體作為一種新穎的非揮發性記憶體,也經常透過GHz頻率範圍內的鐵磁共振(FMR)量測,來分析其中磁穿隧接面(MTJ)的特性。在此背景下,微磁模擬因具備解析奈米尺度磁性材料在高頻行為的能力,已成為推動相關技術發展的重要工具。
本論文運用微磁模擬來探討磁性材料在高頻下的共振行為,藉此連結材料層級的物理響應與實際元件的操作效能。對於電感中的磁芯材料,本研究系統性的分析粒徑、飽和磁化量、阻尼常數與幾何結構等變化,對磁奈米粒子(NP)與奈米線(NW)在有效磁導率、共振頻率及損耗表現上的影響。模擬結果顯示,雖然NP可藉由設計達到較高的共振頻率,但磁導率較低;相較之下,NW則在共振頻率與磁導率之間取得較好的平衡,因而更適合作為高頻電感的磁芯材料。另一方面,MTJ的模擬中,自由層與固定層呈現出不同的FMR訊號,其中自由層具有明顯的單一共振峰,固定層則出現不同模態的兩個較弱訊號。而在自由層無明顯響應的低頻區段,提升輸入功率可使固定層的訊號更容易被觀察到,對於產線上的量測應用具有參考價值。綜合上述,本研究有助於建立高頻磁性材料與元件的設計與量測架構。 | zh_TW |
| dc.description.abstract | Magnetic devices leveraging GHz frequencies play a key role in modern and emerging electronic systems. For instance, integrated inductors, which store magnetic energy and are indispensable in wireless communication systems demanding higher frequencies and smaller footprints, require careful design to ensure optimal performance, potentially including the use of magnetic cores. Furthermore, magnetoresistive random access memory, a novel type of non-volatile memory based on magnetic tunnel junctions (MTJs), also undergoes extensive characterization in this frequency regime through techniques such as ferromagnetic resonance (FMR) to evaluate magnetic properties and device performance. A critical challenge in advancing these technologies lies in controlling and tailoring their complex magnetization dynamics. In this context, micromagnetic simulations have become an valuable predictive tool, offering detailed insight into the dynamic behavior of magnetic materials at the nanoscale under GHz-frequency conditions.
In this thesis, micromagnetic simulations are used to explore these dynamics, focusing on resonance phenomena and aiming to bridge fundamental material-level responses with device-level performance. Regarding magnetic core materials for inductors, the research systematically examines how variations in parameters, such as particle size, saturation magnetization, damping constant, and structural geometry, affect the effective permeability, resonance frequency, and loss characteristics of magnetic nanoparticles (NPs) and nanowires (NWs). Findings indicate that while NPs can be engineered for higher resonance frequencies, they often suffer from reduced permeability. NWs, however, demonstrate a more favorable trade-off, positioning them as superior candidates for high-frequency inductors. For MTJs, simulations characterize distinct FMR signals from free layer and pinned layer. The free layer exhibits a strong single peak, while the pinned layer shows two weaker peaks associated with different dynamic modes. In low-frequency regimes where the free layer signal is absent, increasing the applied power enhances the detectability of the pinned layer signal, providing practical guidance for in-line characterization. These insights contribute to a comprehensive framework for designing and characterizing magnetic materials and devices operating at high frequencies. | en |
| dc.description.provenance | Submitted by admin ntu (admin@lib.ntu.edu.tw) on 2025-06-18T16:11:05Z No. of bitstreams: 0 | en |
| dc.description.provenance | Made available in DSpace on 2025-06-18T16:11:05Z (GMT). No. of bitstreams: 0 | en |
| dc.description.tableofcontents | Verification Letter from the Oral Examination Committee i
Acknowledgements iii 摘要 v Abstract vii Contents ix List of Figures xiii Denotation xxi Chapter 1 Introduction 1 1.1 Introduction to Magnetism 1 1.1.1 Dipolar Interaction 2 1.1.2 Exchange Interaction 2 1.1.3 Magnetic Anisotropy 4 1.1.4 Zeeman Energy 6 1.2 Magnetization Dynamics 7 1.2.1 Landau-Lifshitz-Gilbert Equation 7 1.2.2 Spin-Transfer Torque 8 1.2.3 Thermal Effect 9 1.3 Simulation for Magnetic Systems 10 1.3.1 Magnetization Switching 13 1.3.2 Resonance Phenomenon 15 1.4 Motivation 20 Chapter 2 Performance Analysis of Nanostructured Magnetic Cores for High-Frequency Inductors 23 2.1 Magnetic Core Materials: A Brief Overview 23 2.1.1 Design Consideration for High-Frequency Inductor 23 2.1.2 Snoek’s Limit 26 2.2 Nanoparticles 28 2.2.1 Simulation Protocol 28 2.2.2 Isolated Nanoparticles 29 2.2.3 Inter-particle Interactions and Volume Fraction Effects 33 2.3 Nanowires 38 2.3.1 Simulation Protocol 38 2.3.2 Isolated Nanowires 39 2.3.3 Dipolar Interaction and Volume Fraction Effects 42 2.4 Comparison of Nanoparticles and Nanowires 43 Chapter 3 Ferromagnetic Resonance Characterization in Magnetic Tunnel Junctions 47 3.1 Magnetic Tunnel Junction: A Brief Overview 47 3.1.1 Tunnel Magnetoresistance 48 3.1.2 Contemporary MTJ for MRAM Technology 49 3.1.3 In-line Inspection of MTJ 51 3.2 FMR Response Analysis of Free Layer 56 3.2.1 Simulation Protocol 56 3.2.2 Analysis of Frequency-Swept FMR in Free Layer 58 3.2.3 Analysis of Field-Swept FMR in Free Layer 60 3.2.4 Summary of Frequency-Swept and Field-Swept FMR in Free Layer 61 3.3 FMR Response Analysis of Pinned Layer 62 3.3.1 Simulation Protocol 62 3.3.2 Analysis of Frequency-Swept FMR in Pinned Layer 64 3.3.3 Analysis of Field-Swept FMR in Pinned Layer 66 3.3.4 Summary of Frequency-Swept and Field-Swept FMR in Pinned Layer 69 3.4 FMR Response Analysis of MTJ 70 3.4.1 Stray Field 70 3.4.2 Comparison of FMR Responses between Free Layer and Pinned Layer 71 3.4.3 Applied Power 73 Chapter 4 Conclusion 75 References 77 Appendix A — Complex Magnetic Susceptibility Calculation under a Sinusoidal Magnetic Field 89 | - |
| dc.language.iso | en | - |
| dc.subject | 磁穿隧接面 | zh_TW |
| dc.subject | 鐵磁共振 | zh_TW |
| dc.subject | 磁芯材料 | zh_TW |
| dc.subject | 磁化動力學 | zh_TW |
| dc.subject | 微磁模擬 | zh_TW |
| dc.subject | Ferromagnetic Resonance | en |
| dc.subject | Micromagnetic Simulation | en |
| dc.subject | Magnetization Dynamics | en |
| dc.subject | Magnetic Core Material | en |
| dc.subject | Magnetic Tunnel Junction | en |
| dc.title | 磁芯材料與磁穿隧接面中高頻磁化動態之微磁模擬 | zh_TW |
| dc.title | Exploring High-Frequency Magnetization Dynamics through Micromagnetic Simulations: from Magnetic Core Materials to Magnetic Tunnel Junctions | en |
| dc.type | Thesis | - |
| dc.date.schoolyear | 113-2 | - |
| dc.description.degree | 碩士 | - |
| dc.contributor.oralexamcommittee | 黃斯衍;胡宸瑜 | zh_TW |
| dc.contributor.oralexamcommittee | Ssu-Yen Huang;Chen-Yu Hu | en |
| dc.subject.keyword | 微磁模擬,磁化動力學,磁芯材料,磁穿隧接面,鐵磁共振, | zh_TW |
| dc.subject.keyword | Micromagnetic Simulation,Magnetization Dynamics,Magnetic Core Material,Magnetic Tunnel Junction,Ferromagnetic Resonance, | en |
| dc.relation.page | 90 | - |
| dc.identifier.doi | 10.6342/NTU202500929 | - |
| dc.rights.note | 同意授權(限校園內公開) | - |
| dc.date.accepted | 2025-06-06 | - |
| dc.contributor.author-college | 工學院 | - |
| dc.contributor.author-dept | 材料科學與工程學系 | - |
| dc.date.embargo-lift | 2030-06-06 | - |
| 顯示於系所單位: | 材料科學與工程學系 | |
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