請用此 Handle URI 來引用此文件：
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/97292完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 白奇峰 | zh_TW |
| dc.contributor.advisor | Chi-Feng Pai | en |
| dc.contributor.author | 吉冠宇 | zh_TW |
| dc.contributor.author | Kuan-Yu Chi | en |
| dc.date.accessioned | 2025-04-02T16:19:45Z | - |
| dc.date.available | 2025-04-03 | - |
| dc.date.copyright | 2025-04-02 | - |
| dc.date.issued | 2025 | - |
| dc.date.submitted | 2025-03-03 | - |
| dc.identifier.citation | [1] Rajeev Balasubramonian, David Albonesi, Alper Buyuktosunoglu, and Sandhya Dwarkadas. Memory hierarchy reconfiguration for energy and performance in general-purpose processor architectures. In Proceedings of the 33rd annual ACM/IEEE international symposium on Microarchitecture, pages 245–257, 2000.
[2] Leland Chang, David M Fried, Jack Hergenrother, Jeffrey W Sleight, Robert H Dennard, Robert K Montoye, Lidija Sekaric, Sharee J McNab, Anna W Topol, Charlotte D Adams, et al. Stable sram cell design for the 32 nm node and beyond. In Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005., pages 128–129. IEEE, 2005. [3] Kinam Kim, Chang-Gyu Hwang, and Jong Gil Lee. Dram technology perspective for gigabit era. IEEE Transactions on Electron Devices, 45(3):598–608, 1998. [4] Qing Yang and Jin Ren. I-cash: Intelligently coupled array of ssd and hdd. In 2011 IEEE 17th International Symposium on High Performance Computer Architecture, pages 278–289. IEEE, 2011. [5] BN Engel, J Akerman, B Butcher, RW Dave, M DeHerrera, M Durlam, G Grynkewich, J Janesky, SV Pietambaram, ND Rizzo, et al. A 4-mb toggle mram based on a novel bit and switching method. IEEE Transactions on Magnetics, 41(1): 132–136, 2005. [6] Taehui Na, Seung H Kang, and Seong-Ook Jung. Stt-mram sensing: a review. IEEE Transactions on Circuits and Systems II: Express Briefs, 68(1):12–18, 2020. [7] Fabian Oboril, Rajendra Bishnoi, Mojtaba Ebrahimi, and Mehdi B Tahoori. Evaluation of hybrid memory technologies using sot-mram for on-chip cache hierarchy. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 34(3):367–380, 2015. [8] Wang Kang, Yi Ran, Youguang Zhang, Weifeng Lv, and Weisheng Zhao. Modeling and exploration of the voltage-controlled magnetic anisotropy effect for the next- generation low-power and high-speed mram applications. IEEE Transactions on Nanotechnology, 16(3):387–395, 2017. [9] Yan-Ting Liu, Chao-Chung Huang, Kuan-Hao Chen, Yu-Hao Huang, Chia-Chin Tsai, Ting-Yu Chang, and Chi-Feng Pai. Anatomy of type-x spin-orbit-torque switching. Physical Review Applied, 16(2):024021, 2021. [10] Chi-Feng Pai, Maxwell Mann, Aik Jun Tan, and Geoffrey S. D. Beach. Determination of spin torque efficiencies in heterostructures with perpendicular magnetic anisotropy. Phys. Rev. B, 93:144409, Apr 2016. doi: 10.1103/PhysRevB.93.144409. URL https://link.aps.org/doi/10.1103/PhysRevB.93.144409. [11] Amir Gholami, Zhewei Yao, Sehoon Kim, Coleman Hooper, Michael W. Mahoney, and Kurt Keutzer. Ai and memory wall. IEEE Micro, 44(1):33–39, 2024. doi: 10.1109/MM.2024.3373763. [12] Donghyuk Kim, Chengshuo Yu, Shanshan Xie, Yuzong Chen, Joo-Young Kim, Bongjin Kim, Jaydeep P. Kulkarni, and Tony Tae-Hyoung Kim. An overview of processing-in-memory circuits for artificial intelligence and machine learning. IEEE Journal on Emerging and Selected Topics in Circuits and Systems, 12(2):338–353, 2022. doi: 10.1109/JETCAS.2022.3160455. [13] Bowen Alpern, Larry Carter, Ephraim Feig, and Ted Selker. The uniform memory hierarchy model of computation. Algorithmica, 12(3):72–109, 1994. [14] C. Wann, R. Wong, D.J. Frank, R. Mann, Shang-Bin Ko, P. Croce, D. Lea, D. Hoyniak, Yoo-Mi Lee, J. Toomey, M. Weybright, and J. Sudijono. Sram cell design for stability methodology. In IEEE VLSI-TSA International Symposium on VLSI Technology, 2005. (VLSI-TSA-Tech)., pages 21–22, 2005. doi: 10.1109/VTSA. 2005.1497065. [15] Vinodh Cuppu, Bruce Jacob, Brian Davis, and Trevor Mudge. A performance comparison of contemporary dram architectures. In Proceedings of the 26th annual international symposium on Computer architecture, pages 222–233, 1999. [16] Nitin Agrawal, Vijayan Prabhakaran, Ted Wobber, John D Davis, Mark Manasse, and Rina Panigrahy. Design tradeoffs for {SSD} performance. In 2008 USENIX Annual Technical Conference (USENIX ATC 08), 2008. [17] Y Shiroishi, K Fukuda, I Tagawa, H Iwasaki, S Takenoiri, H Tanaka, H Mutoh, and N Yoshikawa. Future options for hdd storage. IEEE Transactions on Magnetics, 45 (10):3816–3822, 2009. [18] G Razavipour, Ali Afzali-Kusha, and Massoud Pedram. Design and analysis of two low-power sram cell structures. IEEE transactions on very large scale integration (VLSI) systems, 17(10):1551–1555, 2009. [19] Myoung Jin Lee, Seonghoon Jin, Chang-Ki Baek, Sung-Min Hong, Soo-Young Park, Hong-Hyun Park, Sang-Don Lee, Sung-Woong Chung, Jae-Goan Jeong, Sung-Joo Hong, et al. A proposal on an optimized device structure with experimental studies on recent devices for the dram cell transistor. IEEE Transactions on Electron Devices, 54(12):3325–3335, 2007. [20] Romain Corcolle, Erwan Salaün, Frédéric Bouillault, Yves Bernard, Claude Richard, Adrien Badel, and Daniel Guyomar. Modeling of a beam structure with piezoelectric materials: introduction to ssd techniques. COMPEL-The international journal for computation and mathematics in electrical and electronic engineering, 27(1):205–214, 2008. [21] Y Shiroishi, K Fukuda, I Tagawa, H Iwasaki, S Takenoiri, H Tanaka, H Mutoh, and N Yoshikawa. Future options for hdd storage. IEEE Transactions on Magnetics, 45 (10):3816–3822, 2009. [22] Daniel Christopher Worledge. Single-domain model for toggle mram. IBM journal of research and development, 50(1):69–79, 2006. [23] JM Slaughter, RW Dave, M Durlam, G Kerszykowski, K Smith, K Nagel, B Feil, J Calder, M De Herrera, B Garni, et al. High speed toggle mram with mgo-based tunnel junctions. In IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest., pages 873–876. IEEE, 2005. [24] Taehui Na, Seung H Kang, and Seong-Ook Jung. Stt-mram sensing: a review. IEEE Transactions on Circuits and Systems II: Express Briefs, 68(1):12–18, 2020. [25] WS Zhao, Yue Zhang, Thibaut Devolder, Jacques-Olivier Klein, Dafine Ravelosona, Claude Chappert, and Pascale Mazoyer. Failure and reliability analysis of stt-mram. Microelectronics Reliability, 52(9-10):1848–1852, 2012. [26] Jimmy J Kan, Chando Park, Chi Ching, Jaesoo Ahn, Yuan Xie, Mahendra Pakala, and Seung H Kang. A study on practically unlimited endurance of stt-mram. IEEE Transactions on Electron Devices, 64(9):3639–3646, 2017. [27] Fabian Oboril, Rajendra Bishnoi, Mojtaba Ebrahimi, and Mehdi B Tahoori. Evaluation of hybrid memory technologies using sot-mram for on-chip cache hierarchy. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 34(3):367–380, 2015. [28] M Gupta, M Perumkunnil, Kevin Garello, S Rao, F Yasin, GS Kar, and A Furnémont. High-density sot-mram technology and design specifications for the embedded domain at 5nm node. In 2020 IEEE international electron devices meeting (IEDM), pages 24–5. IEEE, 2020. [29] Zhezhi He, Yang Zhang, Shaahin Angizi, Boqing Gong, and Deliang Fan. Exploring a sot-mram based in-memory computing for data processing. IEEE Transactions on Multi-Scale Computing Systems, 4(4):676–685, 2018. [30] Kevin Garello, Farrukh Yasin, Hubert Hody, Sebastien Couet, Laurent Souriau, Shamin H Sharifi, Johan Swerts, Robert Carpenter, Sidharth Rao, Wonsub Kim, et al. Manufacturable 300mm platform solution for field-free switching sot-mram. In 2019 Symposium on VLSI Circuits, pages T194–T195. IEEE, 2019. [31] Wang Kang, Liang Chang, Youguang Zhang, and Weisheng Zhao. Voltage-controlled mram for working memory: Perspectives and challenges. In Design, Automation & Test in Europe Conference & Exhibition (DATE), 2017, pages 542–547. IEEE, 2017. [32] Wang Kang, Yi Ran, Youguang Zhang, Weifeng Lv, and Weisheng Zhao. Modeling and exploration of the voltage-controlled magnetic anisotropy effect for the next-generation low-power and high-speed mram applications. IEEE Transactions on Nanotechnology, 16(3):387–395, 2017. [33] Takayuki Nozaki, Tatsuya Yamamoto, Shinji Miwa, Masahito Tsujikawa, Masafumi Shirai, Shinji Yuasa, and Yoshishige Suzuki. Recent progress in the voltage-controlled magnetic anisotropy effect and the challenges faced in developing voltage-torque mram. Micromachines, 10(5):327, 2019. [34] K Nishioka, H Honjo, S Ikeda, T Watanabe, S Miura, H Inoue, T Tanigawa, Y Noguchi, M Yasuhira, H Sato, et al. Novel quad-interface mtj technology and its first demonstration with high thermal stability factor and switching efficiency for stt-mram beyond 2x nm. IEEE Transactions on Electron Devices, 67(3):995–1000, 2020. [35] Long You, OukJae Lee, Debanjan Bhowmik, Dominic Labanowski, Jeongmin Hong, Jeffrey Bokor, and Sayeef Salahuddin. Switching of perpendicularly polarized nano-magnets with spin orbit torque without an external magnetic field by engineering a tilted anisotropy. Proceedings of the National Academy of Sciences, 112(33):10310–10315, 2015. [36] Hyun-Joong Kim, Kyoung-Woong Moon, Bao Xuan Tran, Seongsoo Yoon, Chang-soo Kim, Seungmo Yang, Jae-Hyun Ha, Kyongmo An, Tae-Seong Ju, Jung-Il Hong, et al. Field-free switching of magnetization by tilting the perpendicular magnetic anisotropy of gd/co multilayers. Advanced Functional Materials, 32(26):2112561, 2022. [37] Elena Y Vedmedenko, Patricia Riego, Jon Ander Arregi, and Andreas Berger. Interlayer dzyaloshinskii-moriya interactions. Physical review letters, 122(25):257202, 2019. [38] Yu-Hao Huang, Chao-Chung Huang, Wei-Bang Liao, Tian-Yue Chen, and Chi-Feng Pai. Growth-dependent interlayer chiral exchange and field-free switching. Physical Review Applied, 18(3):034046, 2022. [39] Yaqin Guo, Jingyan Zhang, Qirui Cui, Ruoyang Liu, Yonglong Ga, Xiaozhi Zhan, Haochang Lyu, Chaoqun Hu, Jialiang Li, Jianjin Zhou, et al. Effect of interlayer dzyaloshinskii-moriya interaction on spin structure in synthetic antiferromagnetic multilayers. Physical Review B, 105(18):184405, 2022. [40] Simon Van Beek, Kaiming Cai, Siddharth Rao, Ganesh Jayakumar, Sebastien Couet, Nico Jossart, Adrian Chasin, and Gouri Sankar Kar. Mtj degradation in sot-mram by self-heating-induced diffusion. In 2022 IEEE International Reliability Physics Symposium (IRPS), pages 4A–2. IEEE, 2022. [41] Zhezhi He, Shaahin Angizi, Farhana Parveen, and Deliang Fan. High performance and energy-efficient in-memory computing architecture based on sot-mram. In 2017 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), pages 97–102. IEEE, 2017. [42] Lijun Zhu, Daniel C Ralph, and Robert A Buhrman. Maximizing spin-orbit torque generated by the spin hall effect of pt. Applied Physics Reviews, 8(3), 2021. [43] Jae Wook Lee, Young-Wan Oh, Seung-Young Park, Adriana I. Figueroa, Gerrit van der Laan, Gyungchoon Go, Kyung-Jin Lee, and Byong-Guk Park. Enhanced spin-orbit torque by engineering pt resistivity in Pt/Co/Alox structures. Phys. Rev. B, 96:064405, Aug 2017. doi: 10.1103/PhysRevB.96.064405. [44] Luqiao Liu, Chi-Feng Pai, Y. Li, H. W. Tseng, D. C. Ralph, and R. A. Buhrman. Spin-torque switching with the giant spin hall effect of tantalum. Science, 336(6081): 555–558, 2012. doi: 10.1126/science.1218197. [45] Yutaro Takeuchi, Chaoliang Zhang, Atsushi Okada, Hideo Sato, Shunsuke Fukami, and Hideo Ohno. Spin-orbit torques in high-resistivity-w/ cofeb/ mgo. Applied Physics Letters, 112(19):192408, 05 2018. ISSN 0003-6951. doi: 10.1063/1.5027855. [46] Jiawei Yu, Xuepeng Qiu, William Legrand, and Hyunsoo Yang. Large spin-orbit torques in pt/co-ni/w heterostructures. Applied Physics Letters, 109(4):042403, 07 2016. ISSN 0003-6951. doi: 10.1063/1.4959958. [47] Mark Lohmann, Darshana Wickramaratne, Jisoo Moon, Mehmet Noyan, Hsun-Jen Chuang, Berend T. Jonker, and Connie H. Li. Highly efficient spin–orbit torque switching in bi2se3/fe3gete2 van der waals heterostructures. ACS Nano, 18(1):680–690, 2024. doi: 10.1021/acsnano.3c09041. [48] Chen-Yu Hu, Yu-Fang Chiu, Chia-Chin Tsai, Chao-Chung Huang, Kuan-Hao Chen, Cheng-Wei Peng, Chien-Min Lee, Ming-Yuan Song, Yen-Lin Huang, Shy-Jay Lin, and Chi-Feng Pai. Toward 100% spin–orbit torque efficiency with high spin–or bital hall conductivity pt–cr alloys. ACS Applied Electronic Materials, 4(3):1099–1108, 2022. doi: 10.1021/acsaelm.1c01233. [49] B. Coester, G.D.H. Wong, Z. Xu, J. Tang, W.L. Gan, and W.S. Lew. Enhanced spin hall conductivity in tungsten-copper alloys. Journal of Magnetism and Magnetic Materials, 523:167545, 2021. ISSN 0304-8853. doi: https://doi.org/10.1016/j.jmmm.2020.167545. [50] Edurne Sagasta, Yasutomo Omori, Saül Vélez, Roger Llopis, Christopher Tollan, Andrey Chuvilin, Luis E. Hueso, Martin Gradhand, YoshiChika Otani, and Fèlix Casanova. Unveiling the mechanisms of the spin hall effect in ta. Phys. Rev. B, 98:060410, Aug 2018. doi: 10.1103/PhysRevB.98.060410. [51] Lijun Zhu, Daniel. C. Ralph, and Robert A. Buhrman. Highly efficient spin-current generation by the spin hall effect in au1−xptx. Phys. Rev. Appl., 10:031001, Sep 2018. doi: 10.1103/PhysRevApplied.10.031001. [52] Lijun Zhu, Lujun Zhu, Shengjie Shi, Daniel C. Ralph, and Robert A. Buhrman. Energy-efficient ultrafast sot-mrams based on low-resistivity spin hall metal au0.25pt0.75. Advanced Electronic Materials, 6(2):1901131, 2020. doi: https: //doi.org/10.1002/aelm.201901131. [53] Lijun Zhu, Kemal Sobotkiewich, Xin Ma, Xiaoqin Li, Daniel C. Ralph, and Robert A. Buhrman. Strong damping-like spin-orbit torque and tunable dzyaloshinskii –moriya interaction generated by low-resistivity pd1−pt alloys. Advanced Functional Materials, 29(16):1805822, 2019. doi: https://doi.org/10.1002/adfm. 201805822. [54] Minh-Hai Nguyen, Mengnan Zhao, D. C. Ralph, and R. A. Buhrman. Enhanced spin hall torque efficiency in pt100−xalx and pt100−xhfx alloys arising from the intrinsic spin hall effect. Applied Physics Letters, 108(24):242407, 06 2016. ISSN 00036951. doi: 10.1063/1.4953768. [55] Hao-Kai Chang, Kuan-Yu Chi, Yu-Lon Lin, Yu-Hsien Lai, Yen-Lin Huang, Chi-Feng Pai, and Chao-Yao Yang. Spin–orbit torque booster in an antiferromagnet via facilitating a global antiferromagnetic order: A route toward an energy-efficient memory. ACS Applied Materials & Interfaces, 16(47):65037–65045, 2024. doi: 10.1021/acsami.4c15453. [56] Lijun Zhu, Lujun Zhu, and Robert A. Buhrman. Fully spin-transparent magnetic interfaces enabled by the insertion of a thin paramagnetic nio layer. Phys. Rev. Lett., 126:107204, Mar 2021. doi: 10.1103/PhysRevLett.126.107204. [57] B. Cantor and R.W. Cahn. Metastable alloy phases by co-sputtering. Acta Metallurgica, 24(9):845–852, 1976. ISSN 0001-6160. doi: https://doi.org/10.1016/0001-6160(76)90051-1. [58] Donald M. Mattox. Physical vapor deposition (pvd) processes. Metal Finishing, 100:394–408, 2002. ISSN 0026-0576. doi: https://doi.org/10.1016/S0026-0576(02) 82043-8. [59] Anand Sekar, Usha Rani Muthurakku, and Kalainathan Sivaperuman. An overview on recent trends in deep-ultraviolet (duv) and ultraviolet (uv) nonlinear optical crystals. ChemistrySelect, 6(39):10688–10716, 2021. doi: https://doi.org/10.1002/slct. 202101065. [60] Dae-Yun Kim, Duck-Ho Kim, Joon Moon, and Sug-Bong Choe. Determination of magnetic domain-wall types using dzyaloshinskii–moriya-interaction-induced domain patterns. Applied Physics Letters, 106(26):262403, 06 2015. ISSN 0003-6951. doi: 10.1063/1.4922943. [61] Chi-Feng Pai, Maxwell Mann, Aik Jun Tan, and Geoffrey S. D. Beach. Determination of spin torque efficiencies in heterostructures with perpendicular magnetic anisotropy. Phys. Rev. B, 93:144409, Apr 2016. doi: 10.1103/PhysRevB.93.144409. [62] R. H. Koch, J. A. Katine, and J. Z. Sun. Time-resolved reversal of spin-transfer switching in a nanomagnet. Phys. Rev. Lett., 92:088302, Feb 2004. doi:10.1103/PhysRevLett.92.088302. [63] Sutapa Dutta and Ashwin A. Tulapurkar. Observation of nonlocal orbital transport and sign reversal of dampinglike torque in nb/ni and ta/ni bilayers. Phys. Rev. B, 106: 184406, Nov 2022. doi: 10.1103/PhysRevB.106.184406. [64] R. Yu, B. F. Miao, L. Sun, Q. Liu, J. Du, P. Omelchenko, B. Heinrich, Mingzhong Wu, and H. F. Ding. Determination of spin hall angle and spin diffusion length in β-phase-dominated tantalum. Phys. Rev. Mater., 2:074406, Jul 2018. doi: 10.1103/PhysRevMaterials.2.074406. [65] Chi-Feng Pai, Luqiao Liu, Y. Li, H. W. Tseng, D. C. Ralph, and R. A. Buhrman. Spin transfer torque devices utilizing the giant spin hall effect of tungsten. Applied Physics Letters, 101(12):122404, 09 2012. ISSN 0003-6951. doi: 10.1063/1.4753947. | - |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/97292 | - |
| dc.description.abstract | 5d過渡金屬鉑因其強烈的自旋霍爾效應，在自旋軌道扭矩裝置中發揮了關鍵作用。然而，與具有-0.3阻尼類自旋霍爾效率（ξDL）的鎢相比，鉑的ξDL僅約為0.1，使其在實際應用中相對不利。除了具備較高的類阻尼效率外，鉑合金還具有更低的電阻率和更大的可調性（ρxx = 48.0~215.4 μΩ·cm），相較於鎢更具優勢。透過摻雜技術，鉑合金在與鎢相當的電阻率下可以達到更高的類阻尼效率（ξDL = 0.618）。例如，Pt0.8MgO0.2表現出低臨界SOT驅動切換電流密度Jc0 = 1.85 x 10^10 A·m–2。在本研究中，我們探索了多種摻雜元素，包括氧化物（氧化鎳 (ξDL= 0.410)、氧化鎂 (ξDL = 0.618)）、5d過渡金屬（鉭 (ξDL = 0.374)、鎢 (ξDL = 0.284)）、鐵磁材料（鈷 (ξDL = 0.071)、鈷鐵硼 (ξDL = 0.276)）及4d過渡金屬（鈮 (ξDL = 0.457)）。研究結果顯示，摻雜MgO氧化物最能有效提升整體類阻尼效率，並透過特定的薄膜結構設計實現無場切換，同時顯著降低切換電流密度。 | zh_TW |
| dc.description.abstract | The 5d transition metal platinum (Pt) plays a crucial role in spin-orbit torque (SOT) devices due to its strong spin Hall effect. However, compared to tungsten (W), which has a damping-like spin Hall efficiency (ξDL) of -0.3, the ξDL of Pt is only around 0.1, making it less favorable for practical applications. In addition to its high DL efficiency, Pt alloys offers lower resistivity and greater tunability (ρxx = 48.0~215.4 μΩ·cm) compared to W. By utilizing doping techniques, Pt alloys can achieve higher DL efficiency (ξDL = 0.618) even at resistivity levels comparable to W. A low critical SOT-driven switching current density of Jc0 ≈ 1.85 × 1010 A·m–2 is also demonstrated for Pt0.8MgO0.2. In this work, we explored various dopants, including oxides (NiO (ξDL= 0.410), MgO (ξDL = 0.618)), 5d transition metals (Ta (ξDL = 0.374), W (ξDL = 0.284)), ferromagnetic materials (Co (ξDL = 0.071), CoFeB (ξDL = 0.276)), and 4d transition metals (Nb (ξDL = 0.457)). Our findings indicate that doping with MgO oxide most effectively enhances the overall damping-like efficiency and facilitates field-free switching through specific thin-film structure designs, while also significantly reducing the switching current density. | en |
| dc.description.provenance | Submitted by admin ntu (admin@lib.ntu.edu.tw) on 2025-04-02T16:19:45Z No. of bitstreams: 0 | en |
| dc.description.provenance | Made available in DSpace on 2025-04-02T16:19:45Z (GMT). No. of bitstreams: 0 | en |
| dc.description.tableofcontents | Contents
Verification Letter from the Oral Examination Committee i Acknowledgements iii 摘要 v Abstract vii Contents ix List of Figures xi Denotation xv Chapter 1 Introduction 1 1.1 Modern Memory . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.2 Magnetic Random Access Memory . . . . . . . . . . . . . . . . . . 2 1.3 Different types of MTJ . . . . . . . . . . . . . . . . . . . . . . . . . 4 1.4 Different ways to improve SOT efficiency . . . . . . . . . . . . . . . 6 1.5 The doping method in this work . . . . . . . . . . . . . . . . . . . . 6 Chapter 2 Sample preparation 7 2.1 Lift-off process . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.2 Lift-off devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.3 Magnetron sputtering . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2.4 Fabrication process of Hall bar devices . . . . . . . . . . . . . . . . 10 2.5 Preparation of multilayer structure . . . . . . . . . . . . . . . . . . . 11 Chapter 3 Measurement 13 3.1 Schematics of current-induced domain wall motion in a magnetic het- erostructure with PMA . . . . . . . . . . . . . . . . . . . . . . . . . 13 3.2 Hysteresis loop measurement . . . . . . . . . . . . . . . . . . . . . 14 3.3 Current induced magnetization switching . . . . . . . . . . . . . . . 17 3.4 Field free switching . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Chapter 4 Results and Discussion 21 4.1 Pt-4d Transition Metal Alloy(Nb) . . . . . . . . . . . . . . . . . . . 21 4.2 Pt-5d Transition Metal Alloy(Ta) . . . . . . . . . . . . . . . . . . . 23 4.3 Pt-5d Transition Metal alloy(W) . . . . . . . . . . . . . . . . . . . . 24 4.4 Pt-Ferromagnetic Material Alloy(Co) . . . . . . . . . . . . . . . . . 26 4.5 Pt-Ferromagnetic Material Alloy(CoFeB) . . . . . . . . . . . . . . . 27 4.6 Pt-Oxides Alloy(NiO) . . . . . . . . . . . . . . . . . . . . . . . . . 29 4.7 Pt-Oxides Alloy(MgO) . . . . . . . . . . . . . . . . . . . . . . . . . 31 Chapter 5 Supplementary of Results 33 5.1 Spin diffusion length . . . . . . . . . . . . . . . . . . . . . . . . . . 33 5.2 XRD measurement . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 Chapter 6 Conclusion 37 6.1 Resistivity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 6.2 DL-SOT efficiency . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 References 41 | - |
| dc.language.iso | en | - |
| dc.subject | 無場翻轉 | zh_TW |
| dc.subject | 自旋軌道矩 | zh_TW |
| dc.subject | 自旋霍爾效應 | zh_TW |
| dc.subject | 類阻尼效率 | zh_TW |
| dc.subject | Spin Orbit Torque | en |
| dc.subject | Spin Hall Effect | en |
| dc.subject | Field-Free Switching | en |
| dc.subject | Damping-like efficiency | en |
| dc.title | 透過摻雜提升鉑合金的自旋軌道扭矩效率以降低切換電流密度 | zh_TW |
| dc.title | Enhancing Spin-Orbit Torque Efficiency in Platinum Alloys through Doping for Reduced Switching Current Density | en |
| dc.type | Thesis | - |
| dc.date.schoolyear | 113-2 | - |
| dc.description.degree | 碩士 | - |
| dc.contributor.oralexamcommittee | 楊朝堯;胡宸瑜 | zh_TW |
| dc.contributor.oralexamcommittee | Chao-Yao Yang;Chen-Yu Hu | en |
| dc.subject.keyword | 自旋軌道矩,自旋霍爾效應,類阻尼效率,無場翻轉, | zh_TW |
| dc.subject.keyword | Spin Orbit Torque,Spin Hall Effect,Damping-like efficiency,Field-Free Switching, | en |
| dc.relation.page | 52 | - |
| dc.identifier.doi | 10.6342/NTU202500257 | - |
| dc.rights.note | 未授權 | - |
| dc.date.accepted | 2025-03-04 | - |
| dc.contributor.author-college | 工學院 | - |
| dc.contributor.author-dept | 材料科學與工程學系 | - |
| dc.date.embargo-lift | N/A | - |
| 顯示於系所單位： | 材料科學與工程學系 | |
文件中的檔案：
| 檔案 | 大小 | 格式 | |
|---|---|---|---|
| ntu-113-2.pdf 未授權公開取用 | 4.06 MB | Adobe PDF |
系統中的文件，除了特別指名其著作權條款之外，均受到著作權保護，並且保留所有的權利。