量子點光阻對於新穎砷化鎵太陽能電池之影響及應用

Abstract

在我的研究中做出了1mm,2mm3mm三種尺寸以及square,hollow square, cross及u-shape四種形狀的砷化鎵(GaAs)太陽能電池，分別用了兩種anti-reflection coating(ALD+PECVD/PECVD)並研究其在側面加上量子點光阻(QDPR)後的各種特性改變，包含了短路電流、開路電壓、暗電流、量子效率、填充因子、理想因子跟串聯電阻等。期望可以利用Luminescent down-shifting效應來幫助元件達成更高的效率。 其中在回字形2000um的元件我們觀察到最佳的表現，短路電流密度從13.6mA/〖cm〗^2上升到19.8 mA/〖cm〗^2。相當於45%的提升，其他形狀的元件也有一定的提升，我們從中看到了很大的潛力，未來會朝著優化製程找到最佳參數以及嘗試更多層量子點光阻繼續努力，我們也嘗試了triple junctionSolar cell的製程，目前尚未找到正確的製程方法。我們討論了試過的方法，並持續搜尋可能的解答。

In this study, we fabricated GaAs solar cells of three different sizes and four different shapes, applying two types of anti-reflection coatings (ALD+PECVD/PECVD). We investigated the changes in various characteristics after adding quantum dot photoresist (QDPR) to the sidewalls, including short-circuit current, open-circuit voltage, dark current, quantum efficiency, fill factor, ideality factor, and series resistance. The goal is to enhance device efficiency using the luminescent down-shifting (LDS) effect. Among the devices, the 2000 µm ring-shaped cell demonstrated the best performance, with the short-circuit current density increasing from 13.6 mA/cm² to 19.8 mA/cm², representing a 45% improvement. Other device shapes also showed significant improvements, indicating great potential. In the future, we aim to optimize the fabrication process to determine the best parameters and explore the use of multiple layers of quantum dot photoresist. We also attempted to fabricate triple-junction solar cells but have not yet identified the correct process. Finally, we discussed the methods we tried and continue to explore possible solutions.