U頻段線性化低雜訊放大器、天文接收機分佈式放大器及X頻段氮化鎵功率放大器之研究

Abstract

此論文由三個主要部分組成。第一部分介紹了以90-nm CMOS製程設計的40-56 GHz寬頻低雜訊放大器（LNA）及其線性化技術的設計和測量結果。第二部分描述了為X波段非均勻分佈功率放大器（NDPA），該放大器是使用0.25-μm GaN HEMT製程製造的。第三部分則討論了作為天文接收器寬帶中頻前級放大器的低功耗分佈放大器的設計和測量，其製程同樣為90-nm CMOS。 第一部分集中於使用兩級電流重用和一級共源極配置的寬帶低雜訊放大器（LNA），工作在40-56 GHz頻率範圍內，並在90-nm CMOS技術中採用了分佈式微分疊加（Distributed -DS）線性化技術。此外此電路也採用三繞組反饋變壓器的輸入匹配設計，能夠提供低雜訊指數（NF）、最佳化的輸入匹配和在寬頻帶內顯著的增益。該LNA在46 GHz時達到最高小訊號增益21.3 dB，3-dB帶寬範圍為40到56 GHz，48 GHz時最低NF為4.8 dB，整個頻段的平均NF為5.7 dB，且功耗僅為19.4 mW。當線性化器啟動時，LNA的輸入三階截斷點 (IIP3）為0 dBm。 第二部分介紹了針對X波段設計的功率放大器（PA），該放大器是使用0.25-μm GaN HEMT工藝製造的，旨在通過一級非均勻分佈放大器架構實現10W的輸出功率。設計中包含了一個專門的冷卻模組，有效管理熱量散失。該PA在6-12 GHz頻率範圍內展示了超過10.5 dB的小訊號增益，晶片面積為12 mm²，在9 GHz時達到23.4%的峰值功率轉換效率（PAE），飽和輸出功率超過38 dBm。本研究強調了非均勻分佈放大器（NDPA）在提高寬帶GaN基功率放大器的輸出功率和PAE方面的優勢。 最後一部分介紹了一個操作頻率範圍為6-58 GHz的分佈放大器（DA），在8 GHz時達到小信號峰值增益18.5 dB。該設計具有兩級傳統分佈放大器（CDA），提供低雜訊指數和高輸出功率等優勢。DA運行效率高，消耗的直流功率僅為36.2 mW，晶片尺寸為0.85 mm²。其支持的帶寬可達52 GHz，增益變化在操作範圍內保持在3-dB以內。

This thesis consists of three main parts. The first part presents the design and measurement results of 40-56 GHz broadband LNA with linearizer technique, fabricated in a 90-nm CMOS process. The second part discusses the design and measurement of a low-power distributed amplifier as wideband IF preamplifier for astronomical receivers, fabricated in a 90-nm CMOS process. The third part describes the design and measurement results of X-band non-uniform distributed power amplifier (NDPA) for high power-level system application, fabricated in 0.25-μm GaN HEMT process. The first part focuses on a broad band low-noise amplifier (LNA) by using two-stage current-reused and one-stage common source operating in the 40-56 GHz frequency range, utilizing the derivative superposition (DS) linearization technique in 90-nm CMOS technology. It also features an input matching design with a three-winding feedback transformer that provides low noise figure (NF), optimized input matching, and significant gain across a wide bandwidth. The LNA achieves a peak small signal gain of 21.3 dB at 46 GHz, with a 3-dB bandwidth from 40 to 56 GHz, a minimum NF of 4.8 dB at 48 GHz, and an average NF of 5.7 dB across the band, all while consuming only 19.4 mW of power. When the linearizer is active, the LNA exhibits an IIP3 of 0 dBm. The second part presents introduces This work presents a distributed amplifier (DA) operating in the 6-58 GHz frequency range, achieving a small signal peak gain of 18.5 dB at 8 GHz. The design features two stages of conventional distributed amplifiers (CDA), providing advantages like a low noise figure and high output power. The DA is efficient, consuming only 36.2 mW of DC power and having a compact chip size of 0.85 mm², including pads. It supports a bandwidth of up to 52 GHz, with gain variations maintained within 3-dB across the operating range. The last part presents This work presents a power amplifier (PA) designed for the X-band, fabricated using a 0.25-µm GaN HEMT process, aimed at achieving 10W output power through a one-stage non-uniform distributed amplifier architecture. The design includes a specialized cooling module to effectively manage heat dissipation. The PA demonstrates a small-signal gain exceeding 10.5 dB across the 6-12 GHz frequency range, with a die size of 12 mm², achieving a peak power-added efficiency (PAE) of 23.4% at 9 GHz and saturated output power exceeding 38 dBm. This research emphasizes the advantages of non-uniform distributed amplifiers (NDPA) in enhancing both output power and PAE in wideband GaN-based power amplifiers.