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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 毛明華 | zh_TW |
| dc.contributor.advisor | Ming-Hua Mao | en |
| dc.contributor.author | 賴郁宜 | zh_TW |
| dc.contributor.author | Yu-Yi Lai | en |
| dc.date.accessioned | 2024-09-15T16:09:50Z | - |
| dc.date.available | 2024-09-16 | - |
| dc.date.copyright | 2024-09-14 | - |
| dc.date.issued | 2024 | - |
| dc.date.submitted | 2024-08-10 | - |
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/95623 | - |
| dc.description.abstract | 於本篇論文中，我們以側壁遮罩法(Sidewall Mask Technology)製作矽奈米線元件，將元件作為感測器的應用，並藉由液態閘極(Liquid-Gate)的控制以提高感測靈敏度。透過側壁遮罩法的製程，我們利用傳統的黃光微影技術，搭配圖案反轉(image reversal)、SU8平坦化及側壁遮罩的最佳參數，製成品質良好的奈米線陣列。當奈米線尺寸微縮後，在相同大小的感測區域內可提高奈米線密度，進而增加量測靈敏度。
完成奈米線製程後，我們做pH酸鹼溶液的量測。首先，將元件視為一個電阻(resistor)，在滴上不同pH值的酸鹼溶液後，量奈米線兩端金屬電極之間的電流-電壓特性曲線(I-V curve)。接著，在pH溶液中放入一端電極，形成液態閘極(Liquid-Gate)的架構，量測其電性變化趨勢，並針對施加液態閘極的延遲時間和積分時間對元件特性的影響做測試。最後，計算出酸鹼響應度，兩端點電阻式靈敏度為31%⁄pH，而加上液態閘極後靈敏度獲得大幅提升至55%⁄pH，我們分析其中的原理與變化趨勢，再與文獻上的結果做比較。 | zh_TW |
| dc.description.abstract | In this paper, we adopt Sidewall Mask Technology for fabricating silicon nanowire devices, applying these devices as sensors, and enhancing their sensitivity through the control of a liquid gate. By employing the sidewall mask process, we utilize conventional photolithography, coupled with image reversal, SU8 planarization, and optimized sidewall masking parameters to produce high-quality nanowire arrays. By reducing the dimensions of the nanowires, we increase the density within the same sensing area, thereby enhancing the measurement sensitivity.
After completing the nanowire fabrication, we conducted measurements in pH solutions. Initially, we treated the device as a resistor, measuring the current-voltage (I-V) characteristics of the nanowires after applying various pH solutions. Subsequently, we placed one electrode in the pH solution to create a Liquid-Gate configuration and measured the electrical property trends. We also investigated the effects of the delay and integration times of applying the liquid gate on the device characteristics. Finally, we calculated the pH response ratio, the endpoint resistive sensitivity was 31% per pH, which significantly increased to 55% per pH with the control of the liquid gate. We analyze the underlying principles and trends of these changes and compare them with results from the literature. | en |
| dc.description.provenance | Submitted by admin ntu (admin@lib.ntu.edu.tw) on 2024-09-15T16:09:50Z No. of bitstreams: 0 | en |
| dc.description.provenance | Made available in DSpace on 2024-09-15T16:09:50Z (GMT). No. of bitstreams: 0 | en |
| dc.description.tableofcontents | 致謝 i
摘要 ii Abstract iii 目次 iv 圖次 vii 表次 x 第一章 序論 1 1.1 積體電路的改革與發展 1 1.2 側壁遮罩法與奈米線元件 2 1.3 奈米線的製備 4 1.3.1 Top-Down由上而下製程 4 1.3.2 Bottom-Up由下而上製程 6 1.4 奈米線感測器應用 7 1.4.1 酸鹼感測器 7 1.4.2 濕度感測器 8 1.5 研究動機 9 1.6 論文架構 10 第二章 理論介紹 11 2.1 側壁遮罩法Sidewall Mask Technology 11 2.2 光阻圖案反轉Image Reversal Photoresist 14 2.3 液態閘極 Liquid-Gate 15 2.4 奈米線酸鹼感測器機制與原理 18 第三章 元件製程與實驗方法 21 3.1 晶圓與材料的採用 21 3.2 元件製程 23 3.2.1 圖案反轉 23 3.2.2 SU8平坦化 26 3.2.3 奈米線陣列形成 30 3.2.4 製作電極與保護層 31 第四章 量測結果與討論 34 4.1 元件電流-電壓特性 34 4.2 pH酸鹼量測架構 35 4.3 矽奈米線電晶體pH酸鹼感測器量測結果 37 4.3.1 兩端點電阻式量測 37 4.3.2 液態閘極量測 40 4.3.3 時間對響應的影響 43 第五章 結論 48 5.1 總結 48 5.2 未來方向 48 參考文獻 50 | - |
| dc.language.iso | zh_TW | - |
| dc.subject | 酸鹼感測器 | zh_TW |
| dc.subject | 液態閘極 | zh_TW |
| dc.subject | 測壁遮罩法 | zh_TW |
| dc.subject | 矽奈米線 | zh_TW |
| dc.subject | pH sensor | en |
| dc.subject | Silicon nanowire | en |
| dc.subject | Sidewall Mask Technology | en |
| dc.subject | Liquid-Gate | en |
| dc.title | 具液態閘極控制並以側壁遮罩法製備之奈米線感測器 | zh_TW |
| dc.title | Liquid-Gate-Controlled Silicon Nanowire Sensor Fabricated by Sidewall Mask Technology | en |
| dc.type | Thesis | - |
| dc.date.schoolyear | 112-2 | - |
| dc.description.degree | 碩士 | - |
| dc.contributor.oralexamcommittee | 林浩雄;陳奕君 | zh_TW |
| dc.contributor.oralexamcommittee | Hao-Hsiung Lin;I-Chun Cheng | en |
| dc.subject.keyword | 矽奈米線,測壁遮罩法,液態閘極,酸鹼感測器, | zh_TW |
| dc.subject.keyword | Silicon nanowire,Sidewall Mask Technology,Liquid-Gate,pH sensor, | en |
| dc.relation.page | 55 | - |
| dc.identifier.doi | 10.6342/NTU202403382 | - |
| dc.rights.note | 未授權 | - |
| dc.date.accepted | 2024-08-13 | - |
| dc.contributor.author-college | 電機資訊學院 | - |
| dc.contributor.author-dept | 電子工程學研究所 | - |
| 顯示於系所單位： | 電子工程學研究所 | |
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