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  1. NTU Theses and Dissertations Repository
  2. 電機資訊學院
  3. 電子工程學研究所
請用此 Handle URI 來引用此文件: http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/94613
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dc.contributor.advisor劉宗德zh_TW
dc.contributor.advisorTsung-Te Liuen
dc.contributor.author侯宏諭zh_TW
dc.contributor.authorHung-Yu Houen
dc.date.accessioned2024-08-16T17:02:59Z-
dc.date.available2024-08-17-
dc.date.copyright2024-08-16-
dc.date.issued2024-
dc.date.submitted2024-08-09-
dc.identifier.citation[1] J.-C. Chien, P. L. Mage, H. T. Soh, and A. Arbabian, "An aptamer-based electrochemical-sensing implant for continuous therapeutic-drug monitoring in vivo," in 2019 Symposium on VLSI Circuits, 2019: IEEE, pp. C312-C313.
[2] J.-C. Chien, S. W. Baker, H. T. Soh, and A. Arbabian, "Design and analysis of a sample-and-hold CMOS electrochemical sensor for aptamer-based therapeutic drug monitoring," IEEE journal of solid-state circuits, vol. 55, no. 11, pp. 2914-2929, 2020.
[3] Y.-T. Hsiao et al., "A CMOS/Microfluidics Point-of-Care SoC employing Square-Wave Voltcoulometry for Biosensing with Aptamers and CRISPR-Cas12a Enzymes," in 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023: IEEE, pp. 1-2.
[4] M. Kaisti, "Detection principles of biological and chemical FET sensors," Biosensors and Bioelectronics, vol. 98, pp. 437-448, 2017.
[5] Y.-C. Tsai, W.-Y. Weng, Y.-T. Yeh, and J.-C. Chien, "Dual-Aptamer Drift Canceling Techniques to Improve Long-Term Stability of Real-Time Structure-Switching Aptasensors," ACS sensors, vol. 8, no. 9, pp. 3380-3388, 2023.
[6] S. Pavan, N. Krishnapura, R. Pandarinathan, and P. Sankar, "A power optimized continuous-time ΔΣ ADC for audio applications," IEEE Journal of Solid-State Circuits, vol. 43, no. 2, pp. 351-360, 2008.
[7] S. Pavan and P. Sankar, "Power reduction in continuous-time delta-sigma modulators using the assisted opamp technique," IEEE Journal of Solid-State Circuits, vol. 45, no. 7, pp. 1365-1379, 2010.
[8] P. Shettigar and S. Pavan, "Design Techniques for Wideband Single-Bit Continuous-Time ΔΣ Modulators With FIR Feedback DACs," IEEE Journal of Solid-State Circuits, vol. 47, no. 12, pp. 2865-2879, 2012.
[9] A. Sukumaran and S. Pavan, "Low power design techniques for single-bit audio continuous-time delta sigma ADCs using FIR feedback," IEEE Journal of Solid-State Circuits, vol. 49, no. 11, pp. 2515-2525, 2014.
[10] C. De Berti, P. Malcovati, L. Crespi, and A. Baschirotto, "A 106 dB A-weighted DR low-power continuous-time ΔΣ modulator for MEMS microphones," IEEE Journal of Solid-State Circuits, vol. 51, no. 7, pp. 1607-1618, 2016.
[11] Y. H. Leow, H. Tang, Z. C. Sun, and L. Siek, "A 1 V 103 dB 3rd-order audio continuous-time ΔΣ ADC with enhanced noise shaping in 65 nm CMOS," IEEE Journal of Solid-State Circuits, vol. 51, no. 11, pp. 2625-2638, 2016.
[12] S. Loeda, J. Harrison, F. Pourchet, and A. Adams, "A 10/20/30/40 MHz Feedforward FIR DAC Continuous-Time ΔΣ ADC With Robust Blocker Performance for Radio Receivers," IEEE Journal of Solid-State Circuits, vol. 51, no. 4, pp. 860-870, 2016.
[13] S. Billa, A. Sukumaran, and S. Pavan, "Analysis and design of continuous-time delta–sigma converters incorporating chopping," IEEE Journal of Solid-State Circuits, vol. 52, no. 9, pp. 2350-2361, 2017.
[14] M. Jang, C. Lee, and Y. Chae, "Analysis and design of low-power continuous-time delta-sigma modulator using negative-R assisted integrator," IEEE Journal of Solid-State Circuits, vol. 54, no. 1, pp. 277-287, 2018.
[15] M. Jang, C. Lee, and Y. Chae, "A 134-μW 99.4-dB SNDR audio continuous-time delta-sigma modulator with chopped negative-R and tri-level FIR-DAC," IEEE Journal of Solid-State Circuits, vol. 56, no. 6, pp. 1761-1771, 2020.
[16] S. Pavan, R. Schreier, and G. C. Temes, Understanding delta-sigma data converters. John Wiley & Sons, 2017.
[17] S. Lee, J. Jeong, T. Kim, C. Park, T. Kim, and Y. Chae, "A 5.2-Mpixel 88.4-dB DR 12-in CMOS X-ray detector with 16-bit column-parallel continuous-time incremental ΔΣ ADCs," IEEE Journal of Solid-State Circuits, vol. 55, no. 11, pp. 2878-2888, 2020.
[18] M. A. Pertijs, K. A. Makinwa, and J. H. Huijsing, "A CMOS Smart Temperature Sensor with a 3 Inaccuracy of 0.1 C from− 55 C to 125 C," IEEE J. Solid-State Circuits, vol. 40, no. 12, pp. 2805-2815, 2005.
[19] S. Kamran, Y. Chae, and K. Makinwa, "A CMOS Temperature Sensor With a Voltage-Calibrated Inaccuracy of±0.15° C (3σ) From− 55° C to 125° C," in Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2012 IEEE International, 2012.
[20] B. Yousefzadeh and K. A. Makinwa, "A BJT-Based Temperature-to-Digital Converter With a ±0.25° C 3 sigma-Inaccuracy From− 40° C to+ 180° C Using Heater-Assisted Voltage Calibration," IEEE Journal of Solid-State Circuits, vol. 55, no. 2, pp. 369-377, 2019.
[21] T. Someya, V. Van Hoek, J. Angevare, S. Pan, and K. Makinwa, "A 210 nW NPN-based temperature sensor with an inaccuracy of±0.15° C (3σ) from− 15° C to 85° C utilizing dual-mode frontend," IEEE Solid-State Circuits Letters, vol. 5, pp. 272-275, 2022.
[22] N. G. Toth, Z. Tang, T. Someya, S. Pan, and K. A. Makinwa, "A PNP-Based Temperature Sensor With Continuous-Time Readout and pm 0.1°C (3sigma) Inaccuracy From -55 °C to 125 °C," IEEE Journal of Solid-State Circuits, 2024.
[23] T. Someya, A. K. M. M. Islam, T. Sakurai, and M. Takamiya, "An 11-nW CMOS Temperature-to-Digital Converter Utilizing Sub-Threshold Current at Sub-Thermal Drain Voltage," IEEE Journal of Solid-State Circuits, vol. 54, no. 3, pp. 613-622, 2019, doi: 10.1109/JSSC.2019.2891718.
[24] P. Bergveld, "Development of an ion-sensitive solid-state device for neurophysiological measurements," IEEE Transactions on biomedical engineering, no. 1, pp. 70-71, 1970.
[25] K. B. Parizi, A. J. Yeh, A. S. Poon, and H. P. Wong, "Exceeding Nernst limit (59mV/pH): CMOS-based pH sensor for autonomous applications," in 2012 International Electron Devices Meeting, 2012: IEEE, pp. 24.7. 1-24.7. 4.
[26] Y.-J. Huang et al., "High performance dual-gate ISFET with non-ideal effect reduction schemes in a SOI-CMOS bioelectrical SoC," in 2015 IEEE International Electron Devices Meeting (IEDM), 2015: IEEE, pp. 29.2. 1-29.2. 4.
[27] T. Kang et al., "A 1.74. 12 mm 3 fully integrated pH sensor for implantable applications using differential sensing and drift-compensation," in 2019 Symposium on VLSI Circuits, 2019: IEEE, pp. C310-C311.
[28] Y. Zhang, F. A. Cardoso, and K. L. Shepard, "A 0.72 nW, 1 sample/s fully integrated pH sensor with 65.8 LSB/pH sensitivity," in 2020 IEEE Symposium on VLSI Circuits, 2020: IEEE, pp. 1-2.
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dc.identifier.urihttp://tdr.lib.ntu.edu.tw/jspui/handle/123456789/94613-
dc.description.abstract本論文分為兩個部分:高解析度讀出電路用於電化學生物感測器,以及溫度和 pH 監測電路。
使用由合成核酸製成的適體的生物感測器來檢測目標分子的實時存在和濃度。這種檢測不需要試劑,因而適合於長期體內分子感測。本論文開發了一種高解析度類比數位轉換器,作為基於適體的電化學生物感測器的讀出電路,此電化學生物感測器採用方波伏安庫侖法進行電化學適體讀出。與方波伏安法讀出電路相比,SWVC讀出電路可以在不過度消耗功率的情況下將檢測信噪比提高超過100倍。
此類比數位轉換器由三階增量連續時間三角積分調變器實現。它採用切換負電阻來消除第一級積分器和負電阻的1/f噪聲。它還採用四抽頭FIR-DAC來減少切換混疊效應。為了減少補償FIR-DAC的面積,補償FIR-DAC中加入了一個衰減增益電阻。引入衰減增益電阻後,補償FIR-DAC的電阻減少了10倍。該類比數位轉換器在20 kHz頻寬內達到91.2 dB的信噪比,消耗功率為288.5 μW。此類比數位轉換器與8通道基於適體的電化學讀出電路集成。該電化學讀出電路將與256像素多電極陣列整合。
在第二部分中,為了補償適體的信號漂移,此系統內集成了pH和溫度傳感器。溫度傳感器採用基於BJT的方法。溫度誤差範圍在15到50℃之間為-1.24到+1.46℃。pH感測器採用準差分架構,由離子敏感場效應管和參考場效應管組成。兩個電極都塗有20納米的二氧化矽作為感測膜,感測區域僅為20 μm × 20 μm。pH感測器表現出59.6 mV/pH的靈敏度。為了放大溫度和pH傳感器的信號,使用了開關電容放大器。開關電容放大器的運算跨導放大器採用摺疊共源極架構。放大器的增益調節範圍為2到20。
zh_TW
dc.description.abstractThis thesis is divided into two parts: a high-resolution readout circuit for electrochemical biosensor and a temperature and pH monitoring circuit.
A biosensor utilizing aptamers made of synthetic nucleic acids is employed to detect the real-time presence and concentration of target molecules. This detection occurs without the requirement for reagents, rendering it well-suited for prolonged in vivo molecular sensing. This thesis develops a high-resolution ADC as the readout circuit of an aptamer-based electrochemical biosensor employing square-wave volt-coulometry (SWVC) for the electrochemical aptamer readout. In comparison to square-wave voltammetry (SWV) readout circuit, the SWVC readout circuit can boost the detection SNR by >100× without excessive power consumption.
This ADC is implemented with a 3rd order incremental continuous-time delta-sigma modulator. It employs a chopped negative-resistor (Neg-R) network to remove the 1/f noise of the first stage integrator as well as the Neg-R itself. The modulator also employs a 4-tap FIR-DAC to reduce the aliasing of the chopping ripple. To reduce the area of compensation FIR-DAC, an attenuated gain resistor is added to reduce the area by 10 times. The ADC achieves 91.2-dB SNR in 20 kHz bandwidth and consumes 288.5 μW. This ADC is integrated with an 8-channel aptamer-based electrochemical readout circuit. This electrochemical readout circuit will interface with a 256-pixel multi-electrode array.
In the second part, to compensate the aptamer signaling drift, a pH sensor and a temperature sensor are co-integrated in the same chip. The temperature sensor is designed using BJT-based approach. The temperature error ranges for a -1.24 to +1.46 ℃ within temperature range of 15 to 50 ℃. The pH sensor utilizes a pseudo-differential architecture consisting of an ion sensitive FET (ISFET) and a reference FET (REFET). Both electrodes are coated with 20-nm SiO2 as a sensing membrane at a sensing area of 20 μm × 20 μm. The pH sensor exhibits a sensitive 59.6 mV/pH. To amplify the signal of the temperature and pH sensor, a switch capacitor amplifier is employed. The OTA of the switch capacitor amplifier uses a fold cascode architecture. The amplifier gain turning range is 2 to 20.
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dc.description.provenanceSubmitted by admin ntu (admin@lib.ntu.edu.tw) on 2024-08-16T17:02:59Z
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dc.description.provenanceMade available in DSpace on 2024-08-16T17:02:59Z (GMT). No. of bitstreams: 0en
dc.description.tableofcontents口試委員會審定書 i
誌謝 ii
中文摘要 iii
ABSTRACT iv
CONTENTS vi
LIST OF FIGURES viii
LIST OF TABLES xii
Chapter 1 Introduction 1
1.1 Aptamer-Based Electrochemical Biosensor Readout Circuit 1
1.2 Temperature and pH Monitoring Circuits 4
Chapter 2 Aptamer-Based Electrochemical Biosensor Readout Circuit 6
2.1 System Architecture 6
2.2 Fundamentals of Delta-Sigma Modulator 7
2.2.1 Nyquist-rate sampling 7
2.2.2 Quantization 8
2.2.3 Oversampling 10
2.2.4 Noise-Shaping 12
2.2.5 Higher-Order Noise-Shaping Modulator 14
2.3 Design of a Continuous-Time Delta-Sigma Modulator 15
2.3.1 CTDSM Loop Filter 16
2.3.2 Negative Resistor 18
2.3.3 FIR-DAC 21
2.3.4 OTA of the First stage integrator 24
2.3.5 OTA of Second and Third Stage Integrator 25
2.3.6 Quantizer 27
2.3.7 Continuous-Time Incremental Delta-Sigma Modulator 27
2.4 Experimental Results 29
2.4.1 Die Photo and Measurement Setup 29
2.4.2 DSM Standalone Measurement 30
Chapter 3 Temperature and pH Monitoring Circuit 38
3.1 System Architecture 38
3.2 Temperature Monitor Circuit 39
3.2.1 Design of a Temperature Monitor Circuit 39
3.2.2 Switch-Capacitor Amplifier 42
3.2.3 Measurement Result 43
3.3 Off-chip Heater 45
3.4 pH Monitor Circuit 47
3.4.1 Ion Sensitive FET (ISFET) 47
3.4.2 pH Monitor Circuit 48
3.4.3 Chip Package 50
3.4.4 pH Sensor Measurement Result 52
Chapter 4 Conclusion 56
Chapter 5 Future Works 58
REFERENCE 59
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dc.language.isoen-
dc.subjectpH 監測電路zh_TW
dc.subject電化學生物感測器zh_TW
dc.subject高解析度讀出電路zh_TW
dc.subject溫度 監測電路zh_TW
dc.subjectpH monitoring circuiten
dc.subjecttemperature monitoring circuiten
dc.subjecthigh-resolution readout circuiten
dc.subjectelectrochemical biosensoren
dc.title整合高解析度讀出電路用於核酸電化學感測與溫度和 pH監控zh_TW
dc.titleIntegrated High-Resolution Readout Circuit for Aptamer-Based Electrochemical Sensing with Temperature and pH monitoringen
dc.typeThesis-
dc.date.schoolyear112-2-
dc.description.degree碩士-
dc.contributor.coadvisor簡俊超zh_TW
dc.contributor.coadvisorJun-Chau Chienen
dc.contributor.oralexamcommittee林宗賢;廖育德zh_TW
dc.contributor.oralexamcommitteeTsung-Hsien Lin;Yu-Te Liaoen
dc.subject.keyword電化學生物感測器,高解析度讀出電路,溫度 監測電路,pH 監測電路,zh_TW
dc.subject.keywordhigh-resolution readout circuit,electrochemical biosensor,temperature monitoring circuit,pH monitoring circuit,en
dc.relation.page60-
dc.identifier.doi10.6342/NTU202403232-
dc.rights.note未授權-
dc.date.accepted2024-08-12-
dc.contributor.author-college電機資訊學院-
dc.contributor.author-dept電子工程學研究所-
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