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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/9416完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 劉致為(Liu, Cheewee) | |
| dc.contributor.author | Enrique Encinas Pollos | en |
| dc.contributor.author | 殷瑞 | zh_TW |
| dc.date.accessioned | 2021-05-20T20:21:35Z | - |
| dc.date.available | 2009-02-12 | |
| dc.date.available | 2021-05-20T20:21:35Z | - |
| dc.date.copyright | 2009-02-12 | |
| dc.date.issued | 2009 | |
| dc.date.submitted | 2009-02-03 | |
| dc.identifier.citation | C.-H. Lin, Y.-J. Yang, E. Encinas, W.-Y. Chen, J.-J. Tsai, and C.W. Liu, “Single crystalline film on glass for thin film solar cells,” 2nd International Conference on Surfaces,Coatings and Nanostructured Materials, 2007.
Martin A.Green, “Solar Cells Operating Principles, Technology and System Applications.”, A. Luque, S. Hegedus, “Handbook of Photovoltaic Science and Engineering.”, 2003, M.A.Green, F.D. King and J Shewchun “Minority carrier MIS tunnerl diodes and their application to electron and photovoltaic energy conversion – I Theory” Mohamed Yehya Doghish and Fat Duen Ho “A Comprehensive Analytical Model for Metal-Insulator-Semiconductor (MIS) Devices: A solar cell application” 1993 S. Yoshitomi, S. Tomioka, and N. Haneji, ISDRS., p. 22, 1992. C. –F. Yeh, C. –L. Chen, and G. –H. Lin, J. Electrochem. Soc., 141, 3177 (1994). J. D. Bernstein, S. Qin, C. Chan, and T.-J. King, IEEE Electron Device Letters 16, pp. 421-423, Oct. 1995. Zhineng Fan, Gang Zhao,Paul K. Chu, Zhonghe Jin, Hoi S. Kwok, and Man Wong, Floating low-temperature radio-frequency plasma oxidation of polycrystalline silicon-germanium, Applied Physics Letters Vol 73, No 3, pp 360-362, July 1998 Jingbao Liu et al: 'Formation of Buried Oxide in Siliconusing Separation by Plasma Implantation of Oxygen', Applied Physics Letters, vol. 67, Nol. 16, Oct. 16, 1995, pp. 2361-2363 X. Lu, S. S. K. Iyer, J. B. Liu, C. M. Hu, N. W. Cheung, J. Min, and P. K. Chu, “Separation by plasma implantation of oxygen to form silicon on insulator,” Appl. Phys. Lett., vol. 70, no. 13, pp. 1748–1750, 1997. B. Mizuno, I. Nakayama, N. Aoi, M. Kubota and T. Komeda. Appl. Phys. Lett. 53 (1988), p. 2059. S. Qin and C. Chan,”Plasma Doping for Ultra Shallow Junctions” J. Vac. Sci. Technol. B 12, 962 (1994). S.E. Thompson, G. Sun, K. Wu, J. Lim, and T. Nishida “Key Differences For Process-induced Uniaxial vs. Substrate- induced Biaxial Stressed Si and Ge Channel MOSFETs” S.E. Thompson, et al.,“Key Differences for Process-induced Uniaxial vs. Substrate-induced Biaxial Stressed Si and Ge Channel MOSFETs,” S.E. Thompson, et al. “Future of Strained Si/Semiconductors in Nanoscale MOSFETs,” M. V. Fischettia and S. E. Laux“Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys.” Tsai, Jyun-Jhe (Master Thesis) “Characterization of Crystalline Silicon-Based P-N Junction Solar Cells and Fabrication of Germanium MIS Thin Film Solar Cells” Chris G. Van de Walle “Band Lineups and Deformation Potentials in the Model-Solid Theory” | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/9416 | - |
| dc.description.abstract | 在本論文中，提出三種方法來改善矽晶圓太陽能電池效率：金氧半結構太陽電池、利用浸沒式電漿離子佈值技術鈍化修補太陽電池表面缺陷和施加外應力於太陽電池以增加載子遷移率。
在結構上，製作了Al/SiO2/ p-type與ITO/SiO2/ n-type 兩種不同金氧半結構太陽電池元件，相較於鋁電極來說，因為ITO電極材料的介面特性，缺陷數較多，並無得到較鋁電極佳的光電轉換效率，亦透過ISE模擬軟體理論分析金氧半結構太陽電池。 製程上，利用浸沒式電漿離子佈值技術，對太陽能電池表面做氫鈍化層保護，降低表面複合速率，藉以增加光電流，太陽電池的光電效率可增強約16%。表面複合速率對太陽能電池參數影響透過模擬軟體研究。 最後，將現今廣泛應用於邏輯電路元件的應變矽技術，施加於矽晶圓太陽能電池上，藉由模擬軟體(ISE)來模擬與研究，模擬結果顯示此應力將會減少半導體能隙並增加光吸收，同時增強載子的遷移率，效率提升大約1.5%。 | zh_TW |
| dc.description.abstract | In the present document, three different initiatives taken on behalf of efficiency improvement of wafer based solar cells are presented. First, MIS Solar cells are theoretically analyzed and the outcome is verified by means of TCAD simulation software. Al/SiO2/ptype Si and ITO/SiO2/nType Si devices are constructed and tested obtaining negative results that discard the utilization of transparent conductive oxides as promising contact materials for MIS solar cells.
The influence of front surface recombination on solar cell behavior is examined and an improvement methodology for this parameter by means of PIII technology is derived. PIII acts as a passivation method that tends to decrease the surface defects and hence decreases the surface recombination velocity. Experimental results reflect an efficiency increase of 16%. Finally the impact of mechanically induced strain on solar cells is studied and modeled by software means. Results reveal a reduction in the semiconductor bandgap and a modification of the carrier mobilities that are translated into a 1.5% efficiency augmentation. | en |
| dc.description.provenance | Made available in DSpace on 2021-05-20T20:21:35Z (GMT). No. of bitstreams: 1 ntu-98-J95921060-1.pdf: 23015171 bytes, checksum: 19e9c8d4a4858162bec44e04cacf890b (MD5) Previous issue date: 2009 | en |
| dc.description.tableofcontents | Contents
List of Figures VI List of Tables IX Chapter 1 Introduction 1.1Motivation 1 1.2 Outline 2 Chapter 2 MIS Solar Cells 2.1 Introduction 3 2.2 Theoretical Examination of MIS Solar Cell 4 2.2.1 Dark current Analysis 5 2.2.2 Illuminated Characteristics 9 2.2.3 Effect of Density of Interface Traps 10 2.3 Simulation 10 2.3.1 Dark Current Analysis 11 2.3.2 Dit ( Trap Density ) 13 2.3.2.1 No illumination 13 2.3.2.2 Under Illumination 15 2.4 Experiments 17 2.4.1 Procedure 17 2.4.2 Results 18 2.4.2.1 Aluminum 19 2.4.2.2 ITO 21 2.5 Summary 22 2.6 Discussion 22 References 23 Chapter 3 PIII Passivation for Solar Cells 3.1 Introduction 25 3.2 Theoretical Considerations 26 3.2.1 Surface Recombination 26 3.2.2 Influence on Solar Cell main parameters 30 3.2.3 Plasma Immersion Ion implantation (PIII) 34 3.3 Surface Recombination Velocity Simulation Results 35 3.3.1 Short Circuit Current (Isc) 35 3.3.2 Open Circuit Voltage (Voc) 37 3.3.3 Field Factor (FF) 38 3.3.4 Efficiency (Eff) 39 3.3.5 Conclusions 41 3.4 Experiments 41 3.4.1 Procedure 41 3.4.2 Results 43 3.5 Discussion 45 3.6 Summary 47 References 48 Chapter 4 Strain Technology in Photovoltaics 4.1 Introduction 50 4.2 - Strain Effect Theoretical Background 52 4.2.1 Strain Effect Theoretical Background 52 4.2.2 Impact on Carrier Mobilities 54 4.2.3 Effect on solar cell behavior 56 4.3 Simulation Outcome 58 4.3.1 Short Circuit Current (Isc) 59 4.3.2 Open Circuit Voltage (Voc) 60 4.3.3 Field Factor (FF) 61 4.3.4 Efficiency (Eff) 62 4.4 Discussion 63 4.5 Summary 66 References 67 Chapter 5 Summary and Future Work 5.1 Summary 68 5.2 Future Work 69 | |
| dc.language.iso | en | |
| dc.title | 光伏效率之快速提升技術 | zh_TW |
| dc.title | Efficiency Boosting Approaches for Photovoltaic Technology | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 97-1 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 管傑雄(Kuan, Chieh-Hsiung),劉志文(Liu, Chih-Wen),黃家華(Huang,Chia-Hua),林智玲(Lin, Jyh-Ling) | |
| dc.subject.keyword | 太陽能電池,轉換效率,金屬-氧化物-半導體,電漿離子佈植,應變,雙軸,表面復合, | zh_TW |
| dc.subject.keyword | Solar cells,Efficiency,Metal Insulator Semiconductor,Plasma Immersion Ion Implantation,Strain,Biaxial,Surface Recombination, | en |
| dc.relation.page | 70 | |
| dc.rights.note | 同意授權(全球公開) | |
| dc.date.accepted | 2009-02-04 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 電機工程學研究所 | zh_TW |
| 顯示於系所單位： | 電機工程學系 | |
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