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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/91451完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 李俊興 | zh_TW |
| dc.contributor.advisor | Chun-Hsing Li | en |
| dc.contributor.author | 林志學 | zh_TW |
| dc.contributor.author | Chih-Hsueh Lin | en |
| dc.date.accessioned | 2024-01-26T16:34:00Z | - |
| dc.date.available | 2024-03-30 | - |
| dc.date.copyright | 2024-01-26 | - |
| dc.date.issued | 2024 | - |
| dc.date.submitted | 2024-01-22 | - |
| dc.identifier.citation | [1] T. Nakamura “5G Evolution and 6G” Symposium on VLSI Technology Proceeding, pp., June 2020
[2] 2020_Samsung_6G White Paper. [3] Wei-Heng Lin, Hong-Yuan Yang, Jeng-Han Tsai, Tian-Wei Huang, and Huei Wang, “1024-QAM High Image Rejection V-Band Sub-Harmonic IQ Modulator and Transmitter in 65-nm CMOS Process,” IEEE Trans. Microw. Theory Techn., vol. 61, no. 11, pp. 457-463, July 2013 [4] Z. -M. Tsai, H. -C. Liao, Y. -H. Hsiao, and H. Wang, “V-Band High Data-Rate I/Q Modulator and Demodulator with a Power-Locked Loop LO Source in 0.15-/spl mu/m GaAs pHEMT Technology,” IEEE Trans. Microw. Theory Techn., vol. 61, no. 7, pp. 2670-2684, July 2013 [5] D. Zhao and P. Reynaert, “A 40 nm CMOS E-Band transmitter with compact and symmetrical layout floor-plans,” IEEE J. Solid-State Circuits, vol. 50, no. 11, pp. 2560-2571, Nov. 2015. [6] S. Kang, S. V. Thyagarajan, and A. M. Niknejad, “A 240 GHz fully integrated wideband QPSK transmitter in 65 nm CMOS,” IEEE J. Solid-State Circuits, vol. 50, no. 10, pp. 2256-2267, Oct. 2015. [7] S. V. Thyagarajan, S. Kang, and A. M. Niknejad, “A 240 GHz Fully Integrated Wideband QPSK Receiver in 65 nm CMOS,” IEEE J. Solid-State Circuits, vol. 50, no. 10, pp. 2268-2280, Oct. 2015. [8] N. Sarmah et al., “A Fully Integrated 240-GHz Direct-Conversion Quadrature Transmitter and Receiver Chipset in SiGe Technology,” IEEE Trans. Microw. Theory Techn., vol. 64, no. 2, pp. 562-574, Feb. 2016. [9] K. Katayama et al., “A 300 GHz CMOS Transmitter with 32-QAM 17.5 Gb/s/ch Capability Over Six Channels,” IEEE J. Solid-State Circuits, vol. 51, no. 12, pp. 3037-3048, Dec. 2016. [10] R. Wu et al., “64-QAM 60-GHz CMOS Transceivers for IEEE 802.11ad/ay,” IEEE J. Solid-State Circuits, vol. 52, no. 11, pp. 2871-2891, Nov. 2017. [11] S. Shopov, O. D. Gurbuz, G. M. Rebeiz, and S. P. Voinigescu, “A D -Band Digital Transmitter with 64-QAM and OFDM Free-Space Constellation Formation,” IEEE J. Solid-State Circuits, vol. 53, no. 7, pp. 2012-2022, July 2018. [12] H. Mohammadnezhad, H. Wang, A. Cathelin, and P. Heydari, “A 115–135-GHz 8PSK Receiver Using Multi-Phase RF-Correlation-Based Direct-Demodulation Method,” IEEE J. Solid-State Circuits, vol. 54, no. 9, pp. 2435-2448, Sept. 2019. [13] H. Wang, H. Mohammadnezhad, and P. Heydari, “Analysis and Design of High-Order QAM Direct-Modulation Transmitter for High-Speed Point-to-Point mm-Wave Wireless Links,” IEEE J. Solid-State Circuits, vol. 54, no. 11, pp. 3161-3179, Nov. 2019. [14] Sangyeop Lee et al., “An 80-Gb/s 300-GHz-band single-chip CMOS transceiver,” IEEE J. Solid-State Circuits, vol. 54, no. 12, pp. 3577-3588, Dec. 2019. [15] Stefan Malz, Ph.D. Dissertation, Wuppertal 2019. [16] P. Nazari, S. Jafarlou, and P. Heydari, “A CMOS Two-Element 170-GHz Fundamental-Frequency Transmitter with Direct RF-8PSK Modulation,” IEEE J. Solid-State Circuits, vol. 55, no. 2, pp. 282-297, Feb. 2020. [17] A. Standaert and P. Reynaert, “A 390-GHz Outphasing Transmitter in 28-nm CMOS,” IEEE J. Solid-State Circuits, vol. 55, no. 10, pp. 2703-2713, Oct. 2020. [18] P. Rodriguez-Vazquez, J. Grzyb, B. Heinemann, and U. R. Pfeiffer, “A QPSK 110-Gb/s Polarization-Diversity MIMO Wireless Link with a 220–255 GHz Tunable LO in a SiGe HBT Technology,” IEEE Trans. Microw. Theory Techn., vol. 68, no. 9, pp. 3834-3851, Sept. 2020. [19] P. Zhou et al., “A 150-GHz Transmitter with 12-dBm Peak Output Power Using 130-nm SiGe BiCMOS Process,” IEEE Trans. Microw. Theory Techn., vol. 68, no. 7, pp. 3056-3067, July 2020. [20] H. Li et al., “A 250-GHz Differential SiGe Amplifier with 21.5-dB Gain for Sub-THz Transmitters,” IEEE Trans. Microw. Theory Techn., vol. 10, no. 6, pp. 624-633, Nov. 2020. [21] M. H. Eissa et al., “Frequency Interleaving IF Transmitter and Receiver for 240-GHz Communication in SiGe BiCMOS,” IEEE Trans. Microw. Theory Techn., vol. 68, no. 1, pp. 239-251, Jan. 2020. [22] J. Yu et al., “A 300-GHz Transmitter Front End With −4.1-dBm Peak Output Power for Sub-THz Communication Using 130-nm SiGe BiCMOS Technology,” IEEE Trans. Microw. Theory Techn., vol. 69, no. 11, pp. 4925-4936, Nov. 2021. [23] J. Grzyb, P. Rodríguez-Vázquez, S. Malz, M. Andree, and U. R. Pfeiffer, “A SiGe HBT 215–240 GHz DCA IQ TX/RX Chipset with Built-In Test of USB/LSB RF Asymmetry for 100+ Gb/s Data Rates,” IEEE Trans. Microw. Theory Techn., vol. 70, no. 3, pp. 1696-1714, March 2022. [24] S. Li, Z. Zhang, and G. M. Rebeiz, “An Eight-Element 136–147 GHz Wafer-Scale Phased-Array Transmitter with 32 dBm Peak EIRP and >16 Gbps 16QAM and 64QAM Operation,” IEEE J. Solid-State Circuits, vol. 57, no. 6, pp. 1635-1648, June 2022. [25] H. Li et al., “W-band Scalable 2×2 Phased-Array Transmitter and Receiver Chipsets in SiGe BiCMOS for High Data-Rate Communication,” IEEE J. Solid-State Circuits, vol. 57, no. 9, pp. 2685-2701, Sept. 2022. [26] Stephen Maas, Nonlinear Microwave and RF Circuits, 2nd Edition. Artech, 2003. [27] Juo-Jung Hung, T. M. Hancock, and G. M. Rebeiz, “High-power high-efficiency SiGe Ku- and Ka-band balanced frequency doublers,” IEEE Trans. Microw. Theory Techn., vol. 53, no. 2, pp. 754-761, Feb. 2005. [28] B. Cetinoneri, Y. A. Atesal, A. Fung, and G. M. Rebeiz, “W-Band Amplifiers with 6-dB Noise Figure and Milliwatt-Level 170–200-GHz Doublers in 45-nm CMOS,” IEEE Trans. Microw. Theory Techn., vol. 60, no. 3, pp. 692-701, March 2012. [29] H. -C. Lin and Gabriel M. Rebeiz, “A 135–160 GHz balanced frequency doubler in 45 nm CMOS with 3.5 dBm peak power.” IEEE MTT-S Int. Microwave Symp. Dig., 2014, pp. 1-4. [30] G. Liu, J. Jayamon, J. Buckwalter, and P. Asbeck, “Frequency doublers with 10.2/5.2 dBm peak power at 100/202 GHz in 45nm SOI CMOS,” in Proc. IEEE Radio Freq. Integr. Circuits Symp. (RFIC), May. 2015, pp. 271-274. [31] H. -C. Lin and G. M. Rebeiz, “A SiGe Multiplier Array with Output Power of 5–8 dBm at 200–230 GHz,” IEEE Trans. Microw. Theory Techn., vol. 64, no. 7, pp. 2050-2058, July 2016. [32] K. Wu, S. Muralidharan, and M. M. Hella, “A Wideband SiGe BiCMOS Frequency Doubler with 6.5-dBm Peak Output Power for Millimeter-Wave Signal Sources,” IEEE Trans. Microw. Theory Techn., vol. 66, no. 1, pp. 187-200, Jan. 2018. [33] C. -H. Li and W. -M. Wu, “A Balunless Frequency Multiplier with Differential Output by Current Flow Manipulation,” IEEE Trans. Very Large Scale Integr. (VLSI) Syst., vol. 26, no. 7, pp. 1391-1402, July 2018. [34] B. -H. Ku, H. Chung, and G. M. Rebeiz, “A Milliwatt-Level 70–110 GHz Frequency Quadrupler with >30 dBc Harmonic Rejection,” IEEE Trans. Microw. Theory Techn., vol. 68, no. 5, pp. 1697-1705, May 2020. [35] S. G. Rao, M. Frounchi, and J. D. Cressler, “Triaxial Balun with Inherent Harmonic Reflection for Millimeter-Wave Frequency Doublers,” IEEE Trans. Microw. Theory Techn., vol. 69, no. 6, pp. 2822-2831, June 2021. [36] J. Yu et al., “A 212–260 GHz broadband frequency multiplier chain (×4) in 130-nm BiCMOS technology,” IEEE Int. Microwave Symp., Jun. 2021, pp. 454–457. [37] R. Dong et al., “A 213–233 GHz ×9 frequency multiplier chain with 4.1 dBm output power in 40nm bulk CMOS,” IEEE Int. Microwave Symp., Jun. 2021, pp. 458–461. [38] E. Turkmen et al., “A 220–261 GHz frequency multiplier chain (×18) with 8-dBm peak output power in 130-nm SiGe,” IEEE Microw. Wireless Compon. Lett., vol. 32, no. 7, pp. 895–898, Jul. 2022. [39] A. Gadallah et al., “A 250–300 GHz frequency multiplier-by-8 chain in SiGe technology,” IEEE Int. Microwave Symp., Jun. 2022, pp. 657–660. [40] R. Dong et al., “A 260-GHz four-way phase compensated CMOS frequency multiplier chain,” IEEE Trans. THz Sci. Technol., vol. 13, no. 1, pp. 20–27, Jan. 2023. [41] Z. Li et al., “A 205–273-GHz frequency multiplier chain (×6) with 9-dBm output power and 1.92% DC-to-RF efficiency in 0.13-µm SiGe BiCMOS,” IEEE Trans. Microw. Theory Techn., vol. 71, no. 7, pp. 2909–2919, July 2023. [42] Steve Cripps, RF Power Amplifiers for Wireless Communications, 2nd Edition. Artech, 2006. [43] C. -H. Li, Y. -L. Liu, and C. -N. Kuo, “A 0.6-V 0.33-mW 5.5-GHz Receiver Front-End Using Resonator Coupling Technique,” IEEE Trans. Microw. Theory Techn., vol. 59, no. 6, pp. 1629-1638, June 2011. [44] C. -H. Li, C. -N. Kuo, and M. -C. Kuo, “A 1.2-V 5.2-mW 20–30-GHz Wideband Receiver Front-End in 0.18-μm CMOS,” IEEE Trans. Microw. Theory Techn., vol. 60, no. 11, pp. 3502-3512, Nov. 2012. [45] H. Wang, C. Sideris, and A. Hajimiri, “A CMOS Broadband Power Amplifier with a Transformer-Based High-Order Output Matching Network,” IEEE J. Solid-State Circuits, vol. 45, no. 12, pp. 2709-2722, Dec. 2010. [46] A. Agah, H. Dabag, B. Hanafi, P. Asbeck, L. Larson, and J. Buckwalter, “A 34% PAE, 18.6dBm 42–45GHz stacked power amplifier in 45nm SOI CMOS,” in Proc. IEEE Radio Freq. Integr. Circuits Symp. (RFIC), June. 2012, pp. 57-60. [47] J. Oh, B. Ku, and S. Hong, “A 77-GHz CMOS Power Amplifier with a Parallel Power Combiner Based on Transmission-Line Transformer,” IEEE Trans. Microw. Theory Techn., vol. 61, no. 7, pp. 2662-2669, July 2013. [48] H. -T. Dabag, B. Hanafi, F. Golcuk, A. Agah, J. F. Buckwalter, and P. M. Asbeck, “Analysis and Design of Stacked-FET Millimeter-Wave Power Amplifiers,” IEEE Trans. Microw. Theory Techn., vol. 61, no. 4, pp. 1543-1556, April 2013. [49] W. Ye, K. Ma, K. S. Yeo, and Q. Zou, “A 65 nm CMOS Power Amplifier with Peak PAE above 18.9% From 57 to 66 GHz Using Synthesized Transformer-Based Matching Network,” IEEE Trans. Circuits Syst. I, Reg. Papers, vol. 62, no. 10, pp. 2533-2543, Oct. 2015. [50] D. Zhao and P. Reynaert, “An E-Band Power Amplifier with Broadband Parallel-Series Power Combiner in 40-nm CMOS,” IEEE Trans. Microw. Theory Techn., vol. 63, no. 2, pp. 683-690, Feb. 2015. [51] H. Jia, C. C. Prawoto, B. Chi, Z. Wang, and C. P. Yue, “A Full Ka-Band Power Amplifier with 32.9% PAE and 15.3-dBm Power in 65-nm CMOS,” IEEE Trans. Circuits Syst. I, Reg. Papers, vol. 65, no. 9, pp. 2657-2668, Sept. 2018. [52] C. -W. Wu, Y. -H. Lin, Y. -H. Hsiao, C. -F. Chou, Y. -C. Wu, and H. Wang, “Design of a 60-GHz High-Output Power Stacked- FET Power Amplifier Using Transformer-Based Voltage-Type Power Combining in 65-nm CMOS,” IEEE Trans. Microw. Theory Techn., vol. 66, no. 10, pp. 4595-4607, Oct. 2018. [53] Y. Chang, B. -Z. Lu, Y. Wang, and H. Wang, “A Ka-Band Stacked Power Amplifier with 24.8-dBm Output Power and 24.3% PAE in 65-nm CMOS Technology,” IEEE MTT-S Int. Microwave Symp. 2019, pp. 316-319. [54] Y. Chang, Y. Wang, C. -N. Chen, Y. -C. Wu, and H. Wang, “A V-Band Power Amplifier with 23.7-dBm Output Power, 22.1% PAE, and 29.7-dB Gain in 65-nm CMOS Technology,” IEEE Trans. Microw. Theory Techn., vol. 67, no. 11, pp. 4418-4426, Nov. 2019. [55] Y. Yu et al., “A 68.5~90 GHz High-Gain Power Amplifier with Capacitive Stability Enhancement Technique in 0.13 μm SiGe BiCMOS,” IEEE Trans. Microw. Theory Techn., vol. 68, no. 12, pp. 5359-5370, Dec. 2020. [56] C. Zhao, X. Zhang, H. Liu, Y. Yu, Y. Wu, and K. Kang, “A SiGe Power Amplifier with Double Gain Peaks Based on the Control of Stationary Points of Impedance Transformation,” IEEE Trans. Microw. Theory Techn., vol. 69, no. 4, pp. 2279-2290, April 2021. [57] S. Li and G. M. Rebeiz, “High Efficiency D-Band Multiway Power Combined Amplifiers with 17.5–19-dBm Psat and 14.2–12.1% Peak PAE in 45-nm CMOS RFSOI,” IEEE J. Solid-State Circuits, vol. 57, no. 5, pp. 1332-1343, May 2022. [58] T. Dinc, S. Kalia, S. Akhtar, B. Haroun, B. Cook, and S. Sankaran, “High-Efficiency Class-E Power Amplifiers for mmWave Radar Sensors: Design and Implementation,” IEEE J. Solid-State Circuits, vol. 57, no. 5, pp. 1291-1299, May 2022. [59] J. S. Park and H. Wang, “A Transformer-Based Poly-Phase Network for Ultra-Broadband Quadrature Signal Generation,” IEEE Trans. Microw. Theory Techn., vol. 63, no. 12, pp. 4444-4457, Dec. 2015. [60] G. H. Park, C. W. Byeon, and C. S. Park, “A 60-GHz Low-Power Active Phase Shifter with Impedance-Invariant Vector Modulation in 65-nm CMOS,” IEEE Trans. Microw. Theory Techn., vol. 68, no. 12, pp. 5395-5407, Dec. 2020. [61] R. C. Frye, S. Kapur, and R. C. Melville, “A 2-GHz quadrature hybrid implemented in CMOS technology,” IEEE J. Solid-State Circuits, vol. 38, no. 3, pp. 550-555, March 2003. [62] J. S. Park and H. Wang, “A Transformer-Based Poly-Phase Network for Ultra-Broadband Quadrature Signal Generation,” IEEE Trans. Microw. Theory Techn., vol. 63, no. 12, pp. 4444-4457, Dec. 2015. | - |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/91451 | - |
| dc.description.abstract | 6G預計可以提供超過100 Gb/s的資料傳輸速率,因此需要使用到太赫茲的頻段來獲得大量的頻寬。然而太赫茲收發機仍然面臨許多挑戰如製程限制。40-nm CMOS的fmax約為260~290 GHz,故操作在200 GHz以上的發射機無法實現傳統的功率放大器後架構。本論文提出一個240 GHz發射機,使用混頻器後的架構以確保系統可以提供高階數位調變,並使用直接升頻的方式來減少系統複雜度。
第二章呈現了一個235 GHz的倍頻鏈,由一個疊接功率放大器和三倍頻器所組成。其中三倍頻器使用自混和最佳諧波阻抗匹配的技巧可以提升5.7 dBm的模擬輸出功率。在234 GHz時,量測的峰值轉換增益為-5 dBm、輸出功率為-5.4 dBm而3-dB頻寬為34 GHz。 第三章將此倍頻鏈整合進發射機的LO端並加入相位校正機制,同時說明耦合器和混頻器的設計以及晶片封裝。在240 GHz時,量測的轉換增益為-14.2 dB、1-dB壓縮點為-15.7 dBm、RF輸出頻寬為20 GHz、LO洩漏為-25 dBc、鏡像抑制比為-33.5 dB。有線資料傳輸的量測受到儀器的限制,最高的資料傳輸速率為400 Mb/s使用16QAM的調變方式。在驗證此發射機的性能後加入一個240 GHz的功率放大器來提升發射機的輸出功率。此放大器最佳化電晶體佈局可以改善fmax至380 GHz,另外使用嵌入式網路來增加增益。量測結果顯示峰值轉換增益的頻率飄移至220 GHz以下,因此仍需改善功率放大器的電晶體模型和設計。 | zh_TW |
| dc.description.abstract | 6G is expected to provide the data rate exceeding 100 Gb/s, necessitating the use of the terahertz frequency range to achieve significant bandwidth. However, terahertz transceivers still face various challenges, such as process limitations. The fmax of 40-nm CMOS is approximately 260-290 GHz, making it challenging to achieve traditional PA-last transmitters above 200 GHz. This paper proposes a 240 GHz transmitter using mixer-last architecture to ensure the system can support high-level digital modulation and employs direct up-conversion to reduce system complexity.
Chapter 2 presents a 235 GHz frequency multiplier chain consisting of a cascode power amplifier and a tripler. The tripler utilizes self-mixing and optimal harmonic impedance matching techniques, resulting in a simulated output power improvement of 5.7 dBm. The measured peak conversion gain at 234 GHz is -5 dBm, with an output power of -5.4 dBm and a 3-dB bandwidth of 34 GHz. Chapter 3 integrates the frequency tripler chain into the LO of transmitter, and introduces a phase calibration mechanism. The design of coupler, mixer and packaging will also be explained. At 240 GHz, the measured conversion gain is -14.2 dB, the 1-dB compression point is -15.7 dBm, RF bandwidth is 20 GHz, LO leakage is -25 dBc, and image rejection ratio is -33.5 dB. The limitation of instrument constrains the wired data transmission measurement, resulting in a highest data rate of 400 Mb/s with 16QAM modulation. After validating the transmitter’s performance, a 240 GHz power amplifier is added to enhance the transmitter's output power. Optimization of the transistor layout in this amplifier improves fmax to 380 GHz, and embedded networks are employed to increase gain. Measurement results indicate that the peak conversion gain frequency has shifted below than 220 GHz. Therefore, improvements are necessary in the design and modeling of the power amplifier | en |
| dc.description.provenance | Submitted by admin ntu (admin@lib.ntu.edu.tw) on 2024-01-26T16:34:00Z No. of bitstreams: 0 | en |
| dc.description.provenance | Made available in DSpace on 2024-01-26T16:34:00Z (GMT). No. of bitstreams: 0 | en |
| dc.description.tableofcontents | 口試委員審定書 i
誌謝 ii 中文摘要 iii ABSTRACT iv CONTENTS vi LIST OF FIGURES ix LIST OF TABLES xiii Chapter 1 Introduction 1 1.1 6G Background and Motivation 1 1.2 Literature Survey 2 1.3 Thesis Organization 5 Chapter 2 A 235 GHz Frequency Multiplier Chain (×3) with Optimal Harmonic Impedance Matching Network in 40-nm CMOS 6 2.1 Introduction 6 2.2 40-nm CMOS Technology 7 2.3 Power Amplifier Design 10 2.3.1 Cascode Topology 10 2.3.2 Power Cell Design 11 2.3.3 Neutralization Technique 12 2.3.4 Layout Consideration 14 2.3.5 Transformer Matching Network 16 2.3.6 Simulation Results 18 2.4 Tripler Design 20 2.4.1 Tripler Cell Design 21 2.4.2 Self-mixing Technique 23 2.4.3 Optimal harmonic Impedance Matching 24 2.4.4 Marchand Balun 27 2.5 Stability Check 29 2.5.1 Inter-stage Stability 30 2.5.2 Differential-mode Stability 30 2.5.3 Common-mode stability 30 2.6 Simulation and Measurement Results 31 Chapter 3 A 240 GHz Sub-THz CMOS Transmitter with I/Q LO Phase Calibration for 6G Applications 38 3.1 Introduction 38 3.2 Transformer-based Hybrid Coupler 40 3.3 LO Chain with Phase Calibration 43 3.3.1 LO Chain 43 3.3.2 Phase Calibration 44 3.4 I/Q Up-conversion Mixer 47 3.5 Packaging 50 3.5.1 Overall Packaging 50 3.5.2 IF Matching Filter 51 3.6 Simulation and Measurement Results 53 3.7 Wired Data transmission Measurement 60 3.8 240 GHz PA-Last Transmitter 63 Chapter 4 Conclusion and Future Work 66 4.1 Conclusion 66 4.2 Future Work 67 REFERENCE 69 | - |
| dc.language.iso | en | - |
| dc.subject | 倍頻鏈 | zh_TW |
| dc.subject | 直接升頻 | zh_TW |
| dc.subject | 混頻器 | zh_TW |
| dc.subject | 功率放大器 | zh_TW |
| dc.subject | 發射機 | zh_TW |
| dc.subject | 太赫茲 | zh_TW |
| dc.subject | 互補式金屬氧化物半導體製程 | zh_TW |
| dc.subject | 6G | zh_TW |
| dc.subject | 三倍頻器 | zh_TW |
| dc.subject | power amplifier | en |
| dc.subject | 6G | en |
| dc.subject | CMOS technology | en |
| dc.subject | THz | en |
| dc.subject | transmitter | en |
| dc.subject | mixer | en |
| dc.subject | direct up-conversion | en |
| dc.subject | frequency multiplier chain | en |
| dc.subject | tripler | en |
| dc.title | 應用於6G通訊具LO I/Q相位校正之240 GHz次太赫茲CMOS發射機 | zh_TW |
| dc.title | A 240-GHz Sub-THz CMOS Transmitter with LO I/Q Phase Calibration for 6G Communication Applications | en |
| dc.type | Thesis | - |
| dc.date.schoolyear | 112-1 | - |
| dc.description.degree | 碩士 | - |
| dc.contributor.oralexamcommittee | 郭建男;劉怡君 | zh_TW |
| dc.contributor.oralexamcommittee | Chien-Nan Kuo;Yi-Chun Liu | en |
| dc.subject.keyword | 6G,互補式金屬氧化物半導體製程,太赫茲,發射機,功率放大器,混頻器,直接升頻,倍頻鏈,三倍頻器, | zh_TW |
| dc.subject.keyword | 6G,CMOS technology,THz,transmitter,power amplifier,mixer,direct up-conversion,frequency multiplier chain,tripler, | en |
| dc.relation.page | 76 | - |
| dc.identifier.doi | 10.6342/NTU202400151 | - |
| dc.rights.note | 同意授權(限校園內公開) | - |
| dc.date.accepted | 2024-01-23 | - |
| dc.contributor.author-college | 電機資訊學院 | - |
| dc.contributor.author-dept | 電信工程學研究所 | - |
| dc.date.embargo-lift | 2029-01-27 | - |
| 顯示於系所單位: | 電信工程學研究所 | |
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