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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 胡振國 | zh_TW |
dc.contributor.advisor | Jenn-Gwo Hwu | en |
dc.contributor.author | 林軒毅 | zh_TW |
dc.contributor.author | Hsuan-Yi Lin | en |
dc.date.accessioned | 2023-09-22T17:13:52Z | - |
dc.date.available | 2023-11-09 | - |
dc.date.copyright | 2023-09-22 | - |
dc.date.issued | 2023 | - |
dc.date.submitted | 2023-08-14 | - |
dc.identifier.citation | [1] D. Hisamoto et al., "FinFET-a self-aligned double-gate MOSFET scalable to 20 nm," in IEEE Transactions on Electron Devices, vol. 47, no. 12, pp. 2320-2325, Dec. 2000, doi: 10.1109/16.887014.
[2] N. Loubet et al., "Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET," 2017 Symposium on VLSI Technology, Kyoto, Japan, 2017, pp. T230-T231, doi: 10.23919/VLSIT.2017.7998183. [3] J. R. Tucker, Chinlee Wang, P. Scott Carney; Silicon field‐effect transistor based on quantum tunneling. Appl. Phys. Lett. 1 August 1994; 65 (5): 618–620. https://doi.org/10.1063/1.112250 [4] M. A. Green, F. D. King, and J. Shewchun, "Minority carrier MIS tunnel diodes and their application to electron- and photo-voltaic energy conversion—I. Theory," Solid-State Electron., vol. 17, no. 6, pp. 551–561, Jun. 1974, doi: 10.1016/0038-1101(74)90172-5. [5] J. Shewchun, M.A. Green, and F.D. King, "Minority carrier MIS tunnel diodes and their application to electron- and photo-voltaic energy conversion—II. Experiment, " Solid-State Electron., vol. 17, no. 6, pp. 563–572, Jun. 1974, doi: org/10.1016/0038-1101(74)90173-7. [6] M. Y. Doghish and F. D. Ho, "A comprehensive analytical model for metal-insulator-semiconductor (MIS) devices," in IEEE Transactions on Electron Devices, vol. 39, no. 12, pp. 2771-2780, Dec. 1992, doi: 10.1109/16.168723. [7] M. Y. Doghish and F. D. Ho, "A comprehensive analytical model for metal-insulator-semiconductor (MIS) devices: a solar cell application," in IEEE Transactions on Electron Devices, vol. 40, no. 8, pp. 1446-1454, Aug. 1993, doi: 10.1109/16.223704. [8] C. -S. Liao and J. -G. Hwu, "Remote Gate-Controlled Negative Transconductance in Gated MIS Tunnel Diode," in IEEE Transactions on Electron Devices, vol. 63, no. 7, pp. 2864-2870, July 2016, doi: 10.1109/TED.2016.2565688. [9] K. -W. Lin, K. -C. Chen and J. -G. Hwu, "An Analytical Model for the Electrostatics of Reverse-Biased Al/SiO₂/Si(p) MOS Capacitors With Tunneling Oxide," in IEEE Transactions on Electron Devices, vol. 69, no. 4, pp. 1972-1978, April 2022, doi: 10.1109/TED.2022.3147747. [10] Y. -K. Lin and J. -G. Hwu, "Photosensing by Edge Schottky Barrier Height Modulation Induced by Lateral Diffusion Current in MOS(p) Photodiode," in IEEE Transactions on Electron Devices, vol. 61, no. 9, pp. 3217-3222, Sept. 2014, doi: 10.1109/TED.2014.2334704. [11] C. -Y. Huang and J. -G. Hwu, "Enhanced Photo Sensing and Lowered Power Consumption in Concentric MIS Devices by Monitoring Outer Ring Open-Circuit Voltage With Biased Inner Gate," in IEEE Transactions on Electron Devices, vol. 68, no. 7, pp. 3417-3423, July 2021, doi: 10.1109/TED.2021.3082813. [12] Yen-Hao Shih and Jenn-Gwo Hwu, "An on-chip temperature sensor by utilizing a MOS tunneling diode," in IEEE Electron Device Letters, vol. 22, no. 6, pp. 299-301, June 2001, doi: 10.1109/55.924848. [13] Y. -K. Lin and J. -G. Hwu, "Role of Lateral Diffusion Current in Perimeter-Dependent Current of MOS(p) Tunneling Temperature Sensors," in IEEE Transactions on Electron Devices, vol. 61, no. 10, pp. 3562-3565, Oct. 2014, doi: 10.1109/TED.2014.2346238. [14] K. -H. Tseng, C. -S. Liao and J. -G. Hwu, "Enhancement of Transient Two-States Characteristics in Metal-Insulator-Semiconductor Structure by Thinning Metal Thickness," in IEEE Transactions on Nanotechnology, vol. 16, no. 6, pp. 1011-1015, Nov. 2017, doi: 10.1109/TNANO.2017.2740943. [15] Y.-C. Yang, K.-W. Lin, and J.-G. Hwu, “Transient two-state characteristics in MIS(p) tunnel diode with edge-thickened oxide (ETO) structure,” ECS J. Solid State Sci. Technol., vol. 9, no. 10, Nov. 2020, Art. no. 103006, doi: 10.1149/2162-8777/abc576. [16] J. -Y. Lin and J. -G. Hwu, "Enhanced Transient Behavior in MIS(p) Tunnel Diodes by Trench Forming at the Gate Edge," in IEEE Transactions on Electron Devices, vol. 68, no. 9, pp. 4189-4194, Sept. 2021, doi: 10.1109/TED.2021.3095052. [17] S. -W. Huang and J. -G. Hwu, "Transient Current Enhancement in MIS Tunnel Diodes With Lateral Electric Field Induced by Designed High-Low Oxide Layers," in IEEE Transactions on Electron Devices, vol. 68, no. 12, pp. 6580-6585, Dec. 2021, doi: 10.1109/TED.2021.3122814. [18] S. -W. Huang and J. -G. Hwu, "Improved Two States Characteristics in MIS Tunnel Diodes by Oxide Local Thinning Enhanced Transient Current Behavior," in IEEE Transactions on Electron Devices, vol. 69, no. 12, pp. 7107-7112, Dec. 2022, doi: 10.1109/TED.2022.3215103. [19] C. -S. Liao and J. -G. Hwu, "Subthreshold Swing Reduction by Double Exponential Control Mechanism in an MOS Gated-MIS Tunnel Transistor," in IEEE Transactions on Electron Devices, vol. 62, no. 6, pp. 2061-2065, June 2015, doi: 10.1109/TED.2015.2424245. [20] T. -H. Chiang and J. -G. Hwu, "Ultra-Low Subthreshold Swing in Gated MIS(p) Tunnel Diodes With Engineered Oxide Local Thinning Layers," in IEEE Transactions on Electron Devices, vol. 67, no. 4, pp. 1887-1893, April 2020, doi: 10.1109/TED.2020.2976119. [21] Y.-K. Lin, L. Lin, and J.-G. Hwu, “Minority carriers induced Schottky barrier height modulation in current behavior of metal-oxide-semiconductor tunneling diode,” ECS J. Solid State Sci. Technol., vol. 3, no. 6, pp. Q132–Q135, May 2014, doi: 10.1149/2.019406jss. [22] K. -C. Chen and J. -G. Hwu, "Schottky Barrier Height Modulation (SBHM) Induced Photon Current Gain in MIS(p) Tunnel Diodes for Low Operation Voltage," in IEEE Sensors Journal, vol. 22, no. 4, pp. 3164-3171, 15 Feb.15, 2022, doi: 10.1109/JSEN.2022.3141409. [23] C. -W. Lee and J. -G. Hwu, "A Comprehensive Quantum-Mechanical Model for C-V and I-V Characteristics in Ultrathin MOS Structure and Experiment Verification," M.S. thesis, Dept. Elect. Eng. Nat. Taiwan Univ. Taipei, Taiwan, R.O.C., 2013. [24] C. -S. Liao, W. -C. Kao and J. -G. Hwu, "Energy-Saving Write/Read Operation of Memory Cell by Using Separated Storage Device and Remote Reading With an MIS Tunnel Diode Sensor," in IEEE Journal of the Electron Devices Society, vol. 4, no. 6, pp. 424-429, Nov. 2016, doi: 10.1109/JEDS.2016.2591956. [25] J.-H. Chen, K.-C. Chen, and J.-G. Hwu, “Fringing field induced current coupling in concentric metal–insulator–semiconductor (MIS) tunnel diodes with ultra-thin oxide.” AIP Adv., 12, 045116 (2022). [26] C.-F. Yang and J.-G. Hwu, ‘‘Role of fringing field on the electrical characteristics of metal-oxide-semiconductor capacitors with co-planar and edge-removed oxides,’’ AIP Adv., vol. 6, no. 12, Dec. 2016, Art. no. 125017, doi: 10.1063/1.4971845. [27] G. C. Jain, A. Prasad and B. C. Chakravarty, “On the mechanism of the anodic oxidation of Si at constant voltage,” J. Electrochem. Soc., Vol. 126, pp. 89-92, 1979. [28] M. Grecea, C. Rotaru, N. Nastase, and G. Craciun, “Physical properties of SiO2 thin films obtained by anodic oxidation,” Journal of Molecular Structure, pp. 607-610, 1999. [29] K. J. Yang and Chenming Hu, "MOS capacitance measurements for high-leakage thin dielectrics," in IEEE Transactions on Electron Devices, vol. 46, no. 7, pp. 1500-1501, July 1999, doi: 10.1109/16.772500. [30] C. -F. Yang and J. -G. Hwu, ‘‘Tunable Negative Differential Resistance in MISIM Tunnel Diodes Structure With Concentric Circular Electrodes Controlled by Designed Substrate Bias,’’ IEEE Trans. Electron Devices, vol. 64, no. 12, pp. 5230-5235, Dec. 2017, doi: 10.1109/TED.2017.2757506. [31] B. Majkusiak, “Experimental and theoretical study of the current-voltage characteristics of the MISIM tunnel transistor,” IEEE Trans. Electron Devices, vol. 45, no. 9, pp. 1903–1911, Sep. 1998, doi: 10.1109/16.711354. [32] C. L. Shieh and S. Wagner, “A lateral metal–insulator–p-Si tunnel transistor,” IEEE Electron Device Lett., vol. EDL-4, no. 7, pp. 228–230, Jul. 1983, doi: 10.1109/EDL.1983.25714. | - |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/90056 | - |
dc.description.abstract | 本論文旨在探討金屬-氧化層-半導體穿隧二極體元件移除閘極外圍氧化層後之強化暫態電流及側向電流研究。在第一章中,我們首先探討了傳統共用氧化層的金氧半穿隧二極體元件基礎電性,例如在逆偏壓下產生的厚度與電流關係及深空乏效應,並提及了近期特殊結構的金氧半穿隧二極體在暫態記憶體相關的應用及挑戰。在第二章中,我們提出了一個移除閘極外圍氧化層的金氧半穿隧二極體結構,並探討了其基礎電性與共用氧化層金氧半穿隧二極體的差異,電性差異可歸因於邊緣氧化層移除造成的少數載子缺乏,以及額外的邊緣缺陷形成的漏電流通道,都使得移除閘極外圍氧化層金氧半穿隧二極體有較低的逆偏壓電流及深空乏現象。在第三章中,我們透過同心圓閘極金氧半穿隧二極體結構探討了側向電流與氧化層移除之關係,並發現在較薄的共用氧化層金氧半穿隧二極體當中,中心至環狀閘極之側向電流會遠大於中心閘極之垂直電流,我們將此現象歸因於閘極外圍氧化層之介面正電荷所引起之額外電子流通道。並且也透過電腦模擬及機制說明佐證此一現象。在第四章中,我們對移除閘極外圍氧化層金氧半穿隧二極體進行了強化暫態行為之研究,透過深空乏效應在電壓切換時能有較大的變化以及較低的漏電流,我們展示了移除閘極外圍氧化層金氧半穿隧二極體作為動態存取記憶體之潛力,並對氧化層厚度對暫態行為之影響有進一步的研究。 | zh_TW |
dc.description.abstract | The purpose of this thesis is to investigate the enhanced transient current and lateral current of the metal-insulator-semiconductor tunnel diode (MISTD) after removing the oxide layer outside the gate edge. In the first chapter, we first discussed the basic electrical properties of the traditional planar MISTD, such as the relationship between thickness and current under reverse bias and the deep depletion phenomenon. We also mentioned the recent applications and challenges of special structure MISTDs in transient memory. In the second chapter, we proposed an edge-removed (ER) MISTD structure and discussed its basic electrical properties and differences from the planar MISTD. The electrical differences can be attributed to the lack of minority carriers caused by the removal of the edge oxide layer, and the additional leakage current channel formed by the edge defects, both of which make the ER MISTD have a lower reverse bias current and deeper depletion phenomenon. In the third chapter, we explored the relationship between lateral current and oxide layer removal through the concentric MISIM TD structure and found that in the thinner planar MISTD, the center-to-ring current is much larger than the vertical current of the center gate. We attribute this phenomenon to the additional electron flow channel caused by the positive interface charge of the oxide layer outside the gate. This phenomenon is also supported by TCAD simulations and mechanism explanations. In the fourth chapter, we conducted a study on the enhanced transient behavior of the ER MISTD. Through the deeper depletion effect, there can be a larger change when switching voltage and a reduced leakage current. We demonstrated the potential of the ER MISTD as a dynamic random-access memory and further studied the impact of oxide thickness on transient behavior. | en |
dc.description.provenance | Submitted by admin ntu (admin@lib.ntu.edu.tw) on 2023-09-22T17:13:52Z No. of bitstreams: 0 | en |
dc.description.provenance | Made available in DSpace on 2023-09-22T17:13:52Z (GMT). No. of bitstreams: 0 | en |
dc.description.tableofcontents | 摘要 I
Abstract II Contents IV Figure Captions VI Chapter 1:Introduction 1 1-1 Motivation 2 1-2 Fundamentals of Metal-Insulator-Semiconductor Tunnel Diodes 4 1-2-1 Oxide Thickness Influence on Reverse Bias Current 4 1-2-2 Perimeter Influence on Reverse Bias Current 5 1-2-3 Deep Depletion Phenomenon 6 1-2-4 Applications 6 1-2-5 Experimental Methodology 8 1-3 Summary 9 Chapter 2:The Electrical Characteristics and Mechanism of Edge-removed (ER) MISTD 17 2-1 Introduction 18 2-2 Experimental 18 2-3 Results and Discussion 19 2-3-1 Steady Electrical Characteristics of ER MISTD 19 2-3-2 Mechanism 20 2-4 Summary 21 Chapter 3:Lateral Current Coupling of MIS-Insulator-Metal (MISIM) Tunnel Diodes with Concentric Gate under Floating and Grounded Substrate Bias 30 3-1 Introduction 31 3-2 Experimental 32 3-3 Results and Discussion 32 3-3-1 Vertical and Lateral Current Behavior 33 3-3-2 Current under Grounded Substrate and Ring bias 34 3-3-3 Comparison and Mechanism 36 3-3-4 N-type MISIM Current 38 3-3-5 Voltage Sensing 38 3-4 Summary 40 Chapter 4:Enhancement of Transient Current Behavior in MIS(p) Tunneling Diode by Oxide Removal at the Gate Edge 50 4-1 Introduction 51 4-2 Design Motivations 51 4-3 Results and Discussion 52 4-3-1 I-V and C-V Characteristics at EOT = 3.0 nm 52 4-3-2 Deep Depletion Phenomenon 53 4-3-3 Transient Current Behaviors 54 4-3-4 Endurance Measurements 55 4-3-5 EOT Dependencies of Transient Current Behavior 55 4-3-6 TCAD Simulation 56 4-4 Summary 56 Chapter 5:Conclusion and Future Work 64 5-1 Conclusion 65 5-2 Future Work 66 Reference 69 | - |
dc.language.iso | en | - |
dc.title | 閘極外圍氧化層移除之金氧半穿隧二極體之強化暫態電流行為及側向電流研究 | zh_TW |
dc.title | Enhanced Transient Current Behavior and Lateral Current Investigation of MIS(p) Tunnel Diode by Oxide Removal at the Gate Edge Diodes | en |
dc.type | Thesis | - |
dc.date.schoolyear | 111-2 | - |
dc.description.degree | 碩士 | - |
dc.contributor.oralexamcommittee | 林浩雄;吳幼麟 | zh_TW |
dc.contributor.oralexamcommittee | Hao-Hsiung Lin;You-Lin Wu | en |
dc.subject.keyword | 金氧半穿隧二極體,閘極外圍氧化層移除,氧化層電荷,深空乏效應,記憶體,暫態行為,側向電流, | zh_TW |
dc.subject.keyword | metal-insulator-semiconductor (MIS) tunnel diode (TD),edge-removed (ER) structure,oxide charges,deep depletion phenomenon,memory,transient behavior,lateral current, | en |
dc.relation.page | 74 | - |
dc.identifier.doi | 10.6342/NTU202304165 | - |
dc.rights.note | 同意授權(全球公開) | - |
dc.date.accepted | 2023-08-14 | - |
dc.contributor.author-college | 電機資訊學院 | - |
dc.contributor.author-dept | 電子工程學研究所 | - |
顯示於系所單位: | 電子工程學研究所 |
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