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標題: | 二氧化鋯鉿材料之鐵電穿隧接面之電性分析及可靠度測試 The Electrical Characterization and Reliability Test of HZO Ferroelectric Tunneling Junctions |
作者: | 王姬 Ji Wang |
指導教授: | 劉致為 Chee-Wee Liu |
關鍵字: | 二氧化鋯鉿,鐵電穿隧接面,P-V量测,I-V掃描曲线,極化量測,極性翻轉,耐久度,鐵電電流,穿隧電流, hafnium zirconium dioxide(HZO),ferroelectric tunneling junction,P-V hysteresis loop,I-V sweep curve,poling measurement,polarization switching,endurance,ferroelectric current,tunneling current, |
出版年 : | 2022 |
學位: | 碩士 |
摘要: | 鐵電材料具有可被高於矯頑電壓驅動極性翻轉的特性。其憑藉數據編輯速度快,讀寫能量低,高耐久度的特性作為新型非揮發性記憶體具有廣闊的應用前景。不同結構的鐵電材料穿隧介面的表現和其適用的量測條件均不相同。
本論文是基於二氧化鋯鉿材料之鐵電穿隧接面的電性量測和可靠度分析。利用多種電性量測手段對不同結構的鐵電穿隧界面進行測試分析,歸納其讀取性能與極化特性對開關電流及耐久度產生的影響。並針對串並聯電阻對其電性量測造成的影響進行定量分析。對電性量測結果進行分析,尋找適合的量測條件,並探究極化反轉行為對耐久度影響,有助於未來分析不同元件的電性結果並追求更高的記憶體讀取性能。 本文第二章以TIN/HZO/TIN結構鐵電穿隧介面為量測對象,介紹了P-V和I-V的量測機制,利用方波脈衝量測進行電流讀取,尋找更快的切換速度以及更低讀取電壓,同時保證良好的開關電流比率。結合上述電性量測結果篩選出適合讀取條件進行耐久性的可靠度量測。設計對照實驗研究極化反轉對耐久度的影響。最後對比兩種鐵電層厚度的電性量測及其可靠度結果。 第三章以TIN/HZO/W結構鐵電穿隧介面為量測對象,以第一部分的電性量測為基礎,結合脈衝與IV量測,設計了用於直觀探究不同脈衝條件下極化反轉對讀取電流的影響的極化量測,研究不同脈衝條件對極化反轉強度的影響,尋找更適合的讀取條件。並結合耐久度量測結果,總結其極化反轉程度對耐久度的影響。 第四部分,首先以TIN/HZO/N+GE結構鐵電穿隧介面為量測對象,針對其面積變化帶來的磁滯曲線量測結果進行分析。為了佐證分析,以TIN/HZO/TIN結構鐵電穿隧介面為量測對象,分別串聯並聯電阻進行定量量測。總結電阻及掃描電壓週期對磁滯曲線影響的規律。 Ferroelectric materials can be polarization switching driven by voltages higher than the coercivity voltage. With its fast data programming speed, low read/write energy, and high endurance, ferroelectric materials are promising for new non-volatile memory applications. The tunneling performance and the applicable measurement conditions for different structures of ferroelectric materials are diverse. This thesis is based on the electrical measurements and reliability analysis of the ferroelectric tunneling junction of hafnium zirconium dioxide materials. Various electrical measurement methods are used to analyze different structures of ferroelectric tunneling and to summarize their characteristics in terms of readout, polarization on the switching current, and endurance. Quantitative analysis of the effects of series and parallel resistance on electrical measurements is also performed. The electrical measurement results are analyzed to find suitable measurement conditions and to investigate the effect of polarization reversal on endurance, which will help to analyze the electrical results of different components and to pursue higher memory reading performance in the future. The second chapter of this paper introduces the P-V, and I-V measurement mechanisms using the TiN/HZO/TiN structured ferroelectric tunneling junction as the measurement target and uses square-wave pulse measurement for current readout to find faster-switching speed and lower reading voltage while ensuring better switching current ratio. The above electrical measurement results filter out suitable reading conditions for endurance reliability measurement. A control experiment was designed to study the effect of polarization reversal on endurance. Finally, the electrical measurements of the two ferroelectric layer thicknesses and their reliability results are compared. The third chapter uses the TiN/HZO/W structured ferroelectric tunneling interface as the measurement target. Based on the electrical measurements in the first part, the poling measurements are designed to visually investigate the effect of polarization reversal on the reading current under different pulsing conditions. The effect of polarization reversal on reading current under different pulsing conditions is investigated to find more suitable reading conditions. The effect of polarization reversal on endurance is summarized by combining the endurance measurement results. In the fourth chapter, firstly, the TiN/HZO/n+Ge structured ferroelectric tunneling junction is used as the measurement target, and the hysteresis curves brought by the area variation are analyzed. In order to support the evaluation, the TiN/HZO/TiN structured ferroelectric tunneling junction is used as the measurement target, and the series and parallel resistances are measured separately. The resistances and sweeping voltage periods are summarized to show the effect of hysteresis curves. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/89688 |
DOI: | 10.6342/NTU202203365 |
全文授權: | 同意授權(限校園內公開) |
顯示於系所單位: | 光電工程學研究所 |
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