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標題: | 碳化矽基板上氮化鎵高電子遷移率電晶體與以二氧化矽製作之T型閘極之研究 Investigation of GaN High Electron Mobility Transistors on SiC and T-Gate Utilizing Silicon Dioxide |
作者: | 莊崵喆 Yang-Che Chuang |
指導教授: | 管傑雄 Chieh-Hsiung Kuan |
關鍵字: | 碳化矽基板,氮化鋁鎵/氮化鎵高電子遷移率電晶體,T型閘極,GaN-on-SiC,電子束微影技術, Silicon Carbide substrate,aluminum gallium nitride/gallium nitride high electron mobility transistor,T-gate,GaN-on-SiC,EBL, |
出版年 : | 2023 |
學位: | 碩士 |
摘要: | 隨著科技日新月異的發展,氮化鋁鎵/氮化鎵的高頻、高功率元件正被廣泛的應用,如何微縮元件的尺寸,以及提升元件的表現,是目前大家所探討的重點。
這篇文章製作了以4H-SiC作為基板的高電子移動率電晶體(High electron mobility transistors, HEMTs),並與其他論文以及文獻進行電性的比較,並在之後以純矽片(Silicon)進行T型閘極參數的測試,成功完成了閘極線寬(LG)70奈米的閘極開發,未來工作將以此開發的T型閘極集成在4H-SiC基板上之HEMT磊晶層上方,方能進一步的進行元件性能比較。 With the rapid development of science and technology, AlGaN/GaN high-frequency and high-power devices are being widely utilized. The miniaturization of device dimensions and enhancement of device performance are currently the key areas of exploration. This article presents the fabrication of high electron mobility transistors (HEMTs) using a 4H-SiC substrate, and compares their electrical characteristics with other literatures. Subsequently, T-gate parameter testing was conducted on pure silicon (Si) wafers. Successful development of a T-gate with a gate width (LG) of 70 nanometers was achieved. Future work will involve integrating this developed T-gate onto the epitaxial layer of the HEMT on a 4H-SiC substrate, enabling further comparison of device performance. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/88939 |
DOI: | 10.6342/NTU202303108 |
全文授權: | 未授權 |
顯示於系所單位: | 電子工程學研究所 |
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ntu-111-2.pdf 目前未授權公開取用 | 2.79 MB | Adobe PDF |
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