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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 謝馬利歐 | zh_TW |
dc.contributor.advisor | Mario Hofmann | en |
dc.contributor.author | 林柏翰 | zh_TW |
dc.contributor.author | Po-Han Lin | en |
dc.date.accessioned | 2023-08-16T16:14:56Z | - |
dc.date.available | 2023-11-09 | - |
dc.date.copyright | 2023-08-16 | - |
dc.date.issued | 2023 | - |
dc.date.submitted | 2023-08-08 | - |
dc.identifier.citation | [1] K.S. Novoselov, A.K. Geim, S.V. Morozov, D.-e. Jiang, Y. Zhang, S.V. Dubonos, I.V. Grigorieva, A.A. Firsov, Electric field effect in atomically thin carbon films, science, 306 (2004) 666-669.
[2] A.K. Geim, Graphene: status and prospects, science, 324 (2009) 1530-1534. [3] D.R. Cooper, B. D’Anjou, N. Ghattamaneni, B. Harack, M. Hilke, A. Horth, N. Majlis, M. Massicotte, L. Vandsburger, E. Whiteway, Experimental review of graphene, International Scholarly Research Notices, 2012 (2012). [4] Z. Dong, H. Xu, F. Liang, C. Luo, C. Wang, Z.-Y. Cao, X.-J. Chen, J. Zhang, X. Wu, Raman characterization on two-dimensional materials-based thermoelectricity, Molecules, 24 (2018) 88. [5] L. Wang, X. Xu, L. Zhang, R. Qiao, M. Wu, Z. Wang, S. Zhang, J. Liang, Z. Zhang, Z. Zhang, Epitaxial growth of a 100-square-centimetre single-crystal hexagonal boron nitride monolayer on copper, Nature, 570 (2019) 91-95. [6] B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, A. Kis, Single-layer MoS2 transistors, Nature nanotechnology, 6 (2011) 147-150. [7] S. Tongay, W. Fan, J. Kang, J. Park, U. Koldemir, J. Suh, D.S. Narang, K. Liu, J. Ji, J. Li, Tuning interlayer coupling in large-area heterostructures with CVD-grown MoS2 and WS2 monolayers, Nano letters, 14 (2014) 3185-3190. [8] A.J. Mannix, Z. Zhang, N.P. Guisinger, B.I. Yakobson, M.C. Hersam, Borophene as a prototype for synthetic 2D materials development, Nature nanotechnology, 13 (2018) 444-450. [9] M. Batmunkh, M. Bat‐Erdene, J.G. Shapter, Phosphorene and phosphorene‐based materials–prospects for future applications, Advanced Materials, 28 (2016) 8586-8617. [10] M. Derivaz, D. Dentel, R. Stephan, M.-C. Hanf, A. Mehdaoui, P. Sonnet, C. Pirri, Continuous germanene layer on Al (111), Nano letters, 15 (2015) 2510-2516. [11] M. Chhowalla, H.S. Shin, G. Eda, L.-J. Li, K.P. Loh, H. Zhang, The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets, Nature chemistry, 5 (2013) 263-275. [12] H.R. Gutiérrez, N. Perea-López, A.L. Elías, A. Berkdemir, B. Wang, R. Lv, F. López-Urías, V.H. Crespi, H. Terrones, M. Terrones, Extraordinary room-temperature photoluminescence in triangular WS2 monolayers, Nano letters, 13 (2013) 3447-3454. [13] Q.H. Wang, K. Kalantar-Zadeh, A. Kis, J.N. Coleman, M.S. Strano, Electronics and optoelectronics of two-dimensional transition metal dichalcogenides, Nature nanotechnology, 7 (2012) 699-712. [14] Y. Guan, H. Yao, H. Zhan, H. Wang, Y. Zhou, J. Kang, Optoelectronic properties and strain regulation of the 2D WS2/ZnO Van der Waals heterostructure, RSC advances, 11 (2021) 14085-14092. [15] G. Fiori, F. Bonaccorso, G. Iannaccone, T. Palacios, D. Neumaier, A. Seabaugh, S.K. Banerjee, L. Colombo, Electronics based on two-dimensional materials, Nature nanotechnology, 9 (2014) 768-779. [16] C. Gong, Y. Zhang, W. Chen, J. Chu, T. Lei, J. Pu, L. Dai, C. Wu, Y. Cheng, T. Zhai, Electronic and optoelectronic applications based on 2D novel anisotropic transition metal dichalcogenides, Advanced Science, 4 (2017) 1700231. [17] S.-K. Su, C.-P. Chuu, M.-Y. Li, C.-C. Cheng, H.S.P. Wong, L.-J. Li, Layered semiconducting 2D materials for future transistor applications, Small Structures, 2 (2021) 2000103. [18] J. Shi, Y. Huan, X. Zhao, P. Yang, M. Hong, C. Xie, S. Pennycook, Y. Zhang, Two-dimensional metallic vanadium ditelluride as a high-performance electrode material, ACS nano, 15 (2021) 1858-1868. [19] Z. Zhang, Y. Gong, X. Zou, P. Liu, P. Yang, J. Shi, L. Zhao, Q. Zhang, L. Gu, Y. Zhang, Epitaxial growth of two-dimensional metal–semiconductor transition-metal dichalcogenide vertical stacks (VSe2/MX2) and their band alignments, ACS nano, 13 (2018) 885-893. [20] M.J. Mleczko, R.L. Xu, K. Okabe, H.-H. Kuo, I.R. Fisher, H.S.P. Wong, Y. Nishi, E. Pop, High current density and low thermal conductivity of atomically thin semimetallic WTe2, ACS nano, 10 (2016) 7507-7514. [21] C.-S. Lee, S.J. Oh, H. Heo, S.-Y. Seo, J. Kim, Y.H. Kim, D. Kim, O.F. Ngome Okello, H. Shin, J.H. Sung, Epitaxial van der Waals contacts between transition-metal dichalcogenide monolayer polymorphs, Nano Letters, 19 (2019) 1814-1820. [22] M.N. Ali, J. Xiong, S. Flynn, J. Tao, Q.D. Gibson, L.M. Schoop, T. Liang, N. Haldolaarachchige, M. Hirschberger, N.P. Ong, Large, non-saturating magnetoresistance in WTe2, Nature, 514 (2014) 205-208. [23] I. Pletikosić, M.N. Ali, A.V. Fedorov, R.J. Cava, T. Valla, Electronic structure basis for the extraordinary magnetoresistance in WTe2, Physical review letters, 113 (2014) 216601. [24] L.R. Thoutam, Y.L. Wang, Z.L. Xiao, S. Das, A. Luican-Mayer, R. Divan, G.W. Crabtree, W.K. Kwok, Temperature-dependent three-dimensional anisotropy of the magnetoresistance in WTe2, Physical review letters, 115 (2015) 046602. [25] Z. Zhao, H. Zhang, H. Yuan, S. Wang, Y. Lin, Q. Zeng, G. Xu, Z. Liu, G.K. Solanki, K.D. Patel, Pressure-induced metallization with absence of structural transition in layered molybdenum diselenide, Nature communications, 6 (2015) 7312. [26] D. Kang, Y. Zhou, W. Yi, C. Yang, J. Guo, Y. Shi, S. Zhang, Z. Wang, C. Zhang, S. Jiang, Superconductivity emerging from a suppressed large magnetoresistant state in tungsten ditelluride, Nature communications, 6 (2015) 7804. [27] A.A. Soluyanov, D. Gresch, Z. Wang, Q. Wu, M. Troyer, X. Dai, B.A. Bernevig, Type-II weyl semimetals, Nature, 527 (2015) 495-498. [28] L. Wang, I. Gutiérrez-Lezama, C. Barreteau, N. Ubrig, E. Giannini, A.F. Morpurgo, Tuning magnetotransport in a compensated semimetal at the atomic scale, Nature communications, 6 (2015) 8892. [29] Y. Wang, L. Wang, X. Liu, H. Wu, P. Wang, D. Yan, B. Cheng, Y. Shi, K. Watanabe, T. Taniguchi, Direct evidence for charge compensation-induced large magnetoresistance in thin WTe2, Nano letters, 19 (2019) 3969-3975. [30] Y. Zhao, H. Liu, J. Yan, W. An, J. Liu, X. Zhang, H. Wang, Y. Liu, H. Jiang, Q. Li, Anisotropic magnetotransport and exotic longitudinal linear magnetoresistance in WTe2 crystals, Physical Review B, 92 (2015) 041104. [31] R. Bi, Z. Feng, X. Li, J. Zhao, J. Fan, Y. Shi, D. Yu, X. Wu, Quantum oscillations of thermopower in WTe2 thin films, Physical Review B, 100 (2019) 235405. [32] J.B. Mc Manus, C. Ilhan, B. Balsamo, C. Downing, C.P. Cullen, T. Stimpel-Lindner, G. Cunningham, L. Peters, L. Jones, D. Mullarkey, Synthesis of tungsten ditelluride thin films and highly crystalline nanobelts from pre-deposited reactants, Tungsten, 2 (2020) 321-334. [33] J.-K. Huang, J. Pu, C.-L. Hsu, M.-H. Chiu, Z.-Y. Juang, Y.-H. Chang, W.-H. Chang, Y. Iwasa, T. Takenobu, L.-J. Li, Large-Area Synthesis of Highly Crystalline WSe2 Monolayers and Device Applications, ACS Nano, 8 (2014) 923-930. [34] K. Chen, Z. Chen, X. Wan, Z. Zheng, F. Xie, W. Chen, X. Gui, H. Chen, W. Xie, J. Xu, A Simple Method for Synthesis of High-Quality Millimeter-Scale 1T' Transition-Metal Telluride and Near-Field Nanooptical Properties, Advanced Materials, 29 (2017) 1700704. [35] S. Li, Y.-C. Lin, J. Hong, B. Gao, H.E. Lim, X. Yang, S. Liu, Y. Tateyama, K. Tsukagoshi, Y. Sakuma, K. Suenaga, T. Taniguchi, Mixed-Salt Enhanced Chemical Vapor Deposition of Two-Dimensional Transition Metal Dichalcogenides, Chemistry of Materials, 33 (2021) 7301-7308. [36] X.-C. Pan, X. Chen, H. Liu, Y. Feng, Z. Wei, Y. Zhou, Z. Chi, L. Pi, F. Yen, F. Song, X. Wan, Z. Yang, B. Wang, G. Wang, Y. Zhang, Pressure-driven dome-shaped superconductivity and electronic structural evolution in tungsten ditelluride, Nature Communications, 6 (2015) 7805. [37] C.-H. Lee, E.C. Silva, L. Calderin, M.A.T. Nguyen, M.J. Hollander, B. Bersch, T.E. Mallouk, J.A. Robinson, Tungsten Ditelluride: a layered semimetal, Scientific Reports, 5 (2015) 10013. [38] J.-X. Gong, J. Yang, M. Ge, Y.-J. Wang, D.-D. Liang, L. Luo, X. Yan, W.-L. Zhen, S.-R. Weng, L. Pi, C.-J. Zhang, W.-K. Zhu, Non-Stoichiometry Effects on the Extreme Magnetoresistance in Weyl Semimetal WTe2, Chinese Physics Letters, 35 (2018) 097101. [39] W. Zhang, Q. Wu, L. Zhang, S.-W. Cheong, A.A. Soluyanov, W. Wu, Quasiparticle interference of surface states in the type-II Weyl semimetal WTe2, Physical Review B, 96 (2017) 165125. [40] W. Lu, Y. Zhang, Z. Zhu, J. Lai, C. Zhao, X. Liu, J. Liu, D. Sun, Thin tungsten telluride layer preparation by thermal annealing, Nanotechnology, 27 (2016) 414006. [41] J.M. Woods, J. Shen, P. Kumaravadivel, Y. Pang, Y. Xie, G.A. Pan, M. Li, E.I. Altman, L. Lu, J.J. Cha, Suppression of Magnetoresistance in Thin WTe2 Flakes by Surface Oxidation, ACS Applied Materials & Interfaces, 9 (2017) 23175-23180. [42] Y. Zhao, H. Liu, J. Yan, W. An, J. Liu, X. Zhang, H. Wang, Y. Liu, H. Jiang, Q. Li, Y. Wang, X.-Z. Li, D. Mandrus, X.C. Xie, M. Pan, J. Wang, Anisotropic magnetotransport and exotic longitudinal linear magnetoresistance in WTe2 crystals, Physical Review B, 92 (2015) 041104. [43] J. Zhou, F. Liu, J. Lin, X. Huang, J. Xia, B. Zhang, Q. Zeng, H. Wang, C. Zhu, L. Niu, X. Wang, W. Fu, P. Yu, T.-R. Chang, C.-H. Hsu, D. Wu, H.-T. Jeng, Y. Huang, H. Lin, Z. Shen, C. Yang, L. Lu, K. Suenaga, W. Zhou, S.T. Pantelides, G. Liu, Z. Liu, Large-Area and High-Quality 2D Transition Metal Telluride, Advanced Materials, 29 (2017) 1603471. [44] J. Li, S. Cheng, Z. Liu, W. Zhang, H. Chang, Centimeter-Scale, Large-Area, Few-Layer 1T'-WTe2 Films by Chemical Vapor Deposition and Its Long-Term Stability in Ambient Condition, The Journal of Physical Chemistry C, 122 (2018) 7005-7012. [45] C.H. Naylor, W.M. Parkin, Z. Gao, H. Kang, M. Noyan, R.B. Wexler, L.Z. Tan, Y. Kim, C.E. Kehayias, F. Streller, Y.R. Zhou, R. Carpick, Z. Luo, Y.W. Park, A.M. Rappe, M. Drndić, J.M. Kikkawa, A.T.C. Johnson, Large-area synthesis of high-quality monolayer 1T’-WTe2 flakes, 2D Materials, 4 (2017) 021008. [46] C.-S. Lee, S.J. Oh, H. Heo, S.-Y. Seo, J. Kim, Y.H. Kim, D. Kim, O.F. Ngome Okello, H. Shin, J.H. Sung, S.-Y. Choi, J.S. Kim, J.K. Kim, M.-H. Jo, Epitaxial van der Waals Contacts between Transition-Metal Dichalcogenide Monolayer Polymorphs, Nano Letters, 19 (2019) 1814-1820. [47] O. de Melo, M. Sánchez, A. Borroto, C. de Melo, B.J. García, J.L. Pau, D. Horwat, WTe2 Synthesis by Tellurization of W Precursors Using Isothermal Close Space Vapor Transport Annealing, physica status solidi (a), 215 (2018) 1800425. [48] J.M. Woods, D. Hynek, P. Liu, M. Li, J.J. Cha, Synthesis of WTe2 Nanowires with Increased Electron Scattering, ACS Nano, 13 (2019) 6455-6460. [49] S. Song, Y. Sim, S.-Y. Kim, J.H. Kim, I. Oh, W. Na, D.H. Lee, J. Wang, S. Yan, Y. Liu, J. Kwak, J.-H. Chen, H. Cheong, J.-W. Yoo, Z. Lee, S.-Y. Kwon, Wafer-scale production of patterned transition metal ditelluride layers for two-dimensional metal–semiconductor contacts at the Schottky–Mott limit, Nature Electronics, 3 (2020) 207-215. [50] Y. Zhou, H. Jang, J.M. Woods, Y. Xie, P. Kumaravadivel, G.A. Pan, J. Liu, Y. Liu, D.G. Cahill, J.J. Cha, Direct Synthesis of Large-Scale WTe2 Thin Films with Low Thermal Conductivity, Advanced Functional Materials, 27 (2017) 1605928. [51] J. Kwak, Y. Jo, S. Song, J.H. Kim, S.-Y. Kim, J.-U. Lee, S. Lee, J. Park, K. Kim, G.-D. Lee, J.-W. Yoo, S.Y. Kim, Y.-M. Kong, G.-H. Lee, W.-G. Lee, J. Park, X. Xu, H. Cheong, E. Yoon, Z. Lee, S.-Y. Kwon, Single-Crystalline Nanobelts Composed of Transition Metal Ditellurides, Advanced Materials, 30 (2018) 1707260. [52] L.A. Walsh, R. Yue, Q. Wang, A.T. Barton, R. Addou, C.M. Smyth, H. Zhu, J. Kim, L. Colombo, M.J. Kim, R.M. Wallace, C.L. Hinkle, WTe2 thin films grown by beam-interrupted molecular beam epitaxy, 2D Materials, 4 (2017) 025044. [53] X. Zhu, S. Li, J. Li, R.N. Ali, H. Naz, P. Liu, C. Feng, B. Xiang, Free-standing WTe2 QD-doped NiSe/C nanowires for highly reversible lithium storage, Electrochimica Acta, 295 (2019) 22-28. [54] P.A. Vermeulen, J. Momand, B.J. Kooi, Low temperature epitaxy of tungsten–telluride heterostructure films, CrystEngComm, 21 (2019) 3409-3414. [55] Y. Chen, Y. Chen, J. Ning, L. Chen, W. Zhuang, L. He, R. Zhang, Y. Xu, X. Wang, Observation of Shubnikov-de Haas Oscillations in Large-Scale Weyl Semimetal WTe2 Films, Chinese Physics Letters, 37 (2020) 017104. [56] M. Srinivaas, C.-Y. Wu, J.-G. Duh, Y.-C. Hu, J.M. Wu, Multi-walled carbon-nanotube-decorated tungsten ditelluride nanostars as anode material for lithium-ion batteries, Nanotechnology, 31 (2020) 035406. [57] Y. Sun, K. Fujisawa, M. Terrones, R.E. Schaak, Solution synthesis of few-layer WTe2 and MoxW1−xTe2 nanostructures, Journal of Materials Chemistry C, 5 (2017) 11317-11323. [58] A. Giri, H. Yang, W. Jang, J. Kwak, K. Thiyagarajan, M. Pal, D. Lee, R. Singh, C. Kim, K. Cho, A. Soon, U. Jeong, Synthesis of Atomically Thin Transition Metal Ditelluride Films by Rapid Chemical Transformation in Solution Phase, Chemistry of Materials, 30 (2018) 2463-2473. [59] P. Lu, J.-S. Kim, J. Yang, H. Gao, J. Wu, D. Shao, B. Li, D. Zhou, J. Sun, D. Akinwande, D. Xing, J.-F. Lin, Origin of superconductivity in the Weyl semimetal WTe2 under pressure, Physical Review B, 94 (2016) 224512. [60] E.J. Sie, C.M. Nyby, C.D. Pemmaraju, S.J. Park, X. Shen, J. Yang, M.C. Hoffmann, B.K. Ofori-Okai, R. Li, A.H. Reid, S. Weathersby, E. Mannebach, N. Finney, D. Rhodes, D. Chenet, A. Antony, L. Balicas, J. Hone, T.P. Devereaux, T.F. Heinz, X. Wang, A.M. Lindenberg, An ultrafast symmetry switch in a Weyl semimetal, Nature, 565 (2019) 61-66. [61] W.-D. Kong, S.-F. Wu, P. Richard, C.-S. Lian, J.-T. Wang, C.-L. Yang, Y.-G. Shi, H. Ding, Raman scattering investigation of large positive magnetoresistance material WTe2, Applied Physics Letters, 106 (2015). [62] Q. Song, X. Pan, H. Wang, K. Zhang, Q. Tan, P. Li, Y. Wan, Y. Wang, X. Xu, M. Lin, X. Wan, F. Song, L. Dai, The In-Plane Anisotropy of WTe2 Investigated by Angle-Dependent and Polarized Raman Spectroscopy, Scientific Reports, 6 (2016) 29254. [63] J. Yang, X. Liu, Q. Dong, Y. Shen, Y. Pan, Z. Wang, K. Tang, X. Dai, R. Wu, Y. Jin, W. Zhou, S. Liu, J. Sun, Oxidations of two-dimensional semiconductors: Fundamentals and applications, Chinese Chemical Letters, 33 (2022) 177-185. [64] G. Algara-Siller, O. Lehtinen, F.C. Wang, R.R. Nair, U. Kaiser, H.A. Wu, A.K. Geim, I.V. Grigorieva, Square ice in graphene nanocapillaries, Nature, 519 (2015) 443-445. [65] W. Wang, Y. Zheng, X. Li, Y. Li, H. Zhao, L. Huang, Z. Yang, X. Zhang, G. Li, 2D AlN Layers Sandwiched Between Graphene and Si Substrates, Advanced Materials, 31 (2019) 1803448. [66] H.-T. Chin, M. Hofmann, S.-Y. Huang, S.-F. Yao, J.-J. Lee, C.-C. Chen, C.-C. Ting, Y.-P. Hsieh, Ultra-thin 2D transition metal monochalcogenide crystals by planarized reactions, npj 2D Materials and Applications, 5 (2021) 28. [67] Y.-P. Hsieh, C.-H. Shih, Y.-J. Chiu, M. Hofmann, High-Throughput Graphene Synthesis in Gapless Stacks, Chemistry of Materials, 28 (2016) 40-43. [68] I. Vlassiouk, M. Regmi, P. Fulvio, S. Dai, P. Datskos, G. Eres, S. Smirnov, Role of Hydrogen in Chemical Vapor Deposition Growth of Large Single-Crystal Graphene, ACS Nano, 5 (2011) 6069-6076. [69] Z. Yuan, Z. Pei, M. Shahbaz, Q. Zhang, K. Zhuo, C. Zhao, W. Zhang, X. Ma, S. Sang, Wrinkle Structured Network of Silver-Coated Carbon Nanotubes for Wearable Sensors, Nanoscale Research Letters, 14 (2019) 356. [70] S. Song, S.-Y. Kim, J. Kwak, Y. Jo, J.H. Kim, J.H. Lee, J.-U. Lee, J.U. Kim, H.D. Yun, Y. Sim, J. Wang, D.H. Lee, S.-H. Seok, T.-i. Kim, H. Cheong, Z. Lee, S.-Y. Kwon, Electrically Robust Single-Crystalline WTe2 Nanobelts for Nanoscale Electrical Interconnects, Advanced Science, 6 (2019) 1801370. [71] L. Sun, G. Yuan, L. Gao, J. Yang, M. Chhowalla, M.H. Gharahcheshmeh, K.K. Gleason, Y.S. Choi, B.H. Hong, Z. Liu, Chemical vapour deposition, Nature Reviews Methods Primers, 1 (2021) 5. [72] C.V. Raman, K.S. Krishnan, A New Type of Secondary Radiation, Nature, 121 (1928) 501-502. [73] G. Binnig, C.F. Quate, C. Gerber, Atomic Force Microscope, Physical Review Letters, 56 (1986) 930-933. [74] B.E. Brown, The crystal structures of WTe2 and high-temperature MoTe2, Acta Crystallographica, 20 (1966) 268-274. [75] W. Xu, S. Li, S. Zhou, J.K. Lee, S. Wang, S.G. Sarwat, X. Wang, H. Bhaskaran, M. Pasta, J.H. Warner, Large Dendritic Monolayer MoS2 Grown by Atmospheric Pressure Chemical Vapor Deposition for Electrocatalysis, ACS Applied Materials & Interfaces, 10 (2018) 4630-4639. [76] S. Wang, Y. Rong, Y. Fan, M. Pacios, H. Bhaskaran, K. He, J.H. Warner, Shape Evolution of Monolayer MoS2 Crystals Grown by Chemical Vapor Deposition, Chemistry of Materials, 26 (2014) 6371-6379. [77] M. Xu, B. Tang, Y. Lu, C. Zhu, Q. Lu, C. Zhu, L. Zheng, J. Zhang, N. Han, W. Fang, Y. Guo, J. Di, P. Song, Y. He, L. Kang, Z. Zhang, W. Zhao, C. Guan, X. Wang, Z. Liu, Machine Learning Driven Synthesis of Few-Layered WTe2 with Geometrical Control, Journal of the American Chemical Society, 143 (2021) 18103-18113. [78] J. Liu, Q. Yang, J. Liu, H.a. Luo, Enhanced photoelectrochemical water oxidation of WO3/R-CoO and WO3/B-CoO photoanodes with a type II heterojunction, Journal of Materials Science, 56 (2021) 8079-8090. [79] M.S. Dresselhaus, A. Jorio, M. Hofmann, G. Dresselhaus, R. Saito, Perspectives on Carbon Nanotubes and Graphene Raman Spectroscopy, Nano Letters, 10 (2010) 751-758. [80] Y. Zhou, X. Chen, N. Li, R. Zhang, X. Wang, C. An, Y. Zhou, X. Pan, F. Song, B. Wang, W. Yang, Z. Yang, Y. Zhang, Pressure-induced Td to 1T' structural phase transition in WTe2, AIP Advances, 6 (2016). [81] J. Xia, D.-F. Li, J.-D. Zhou, P. Yu, J.-H. Lin, J.-L. Kuo, H.-B. Li, Z. Liu, J.-X. Yan, Z.-X. Shen, Pressure-Induced Phase Transition in Weyl Semimetallic WTe2, Small, 13 (2017) 1701887. [82] F. Ye, J. Lee, J. Hu, Z. Mao, J. Wei, P.X.-L. Feng, Environmental Instability and Degradation of Single- and Few-Layer WTe2 Nanosheets in Ambient Conditions, Small, 12 (2016) 5802-5808. [83] A. Chen, H. Li, R. Huang, Y. Zhao, T. Liu, Z. Li, L. Wang, F. Chen, W. Ren, S. Lu, B. Yang, Z. Huang, S. Ding, F.-S. Li, Observation of band bending in WTe2 after surface oxidation, Surface Science, 716 (2022) 121956. [84] A. Berkdemir, H.R. Gutiérrez, A.R. Botello-Méndez, N. Perea-López, A.L. Elías, C.-I. Chia, B. Wang, V.H. Crespi, F. López-Urías, J.-C. Charlier, H. Terrones, M. Terrones, Identification of individual and few layers of WS2 using Raman Spectroscopy, Scientific Reports, 3 (2013) 1755. [85] Z. Lai, Q. He, T.H. Tran, D.V.M. Repaka, D.-D. Zhou, Y. Sun, S. Xi, Y. Li, A. Chaturvedi, C. Tan, B. Chen, G.-H. Nam, B. Li, C. Ling, W. Zhai, Z. Shi, D. Hu, V. Sharma, Z. Hu, Y. Chen, Z. Zhang, Y. Yu, X. Renshaw Wang, R.V. Ramanujan, Y. Ma, K. Hippalgaonkar, H. Zhang, Metastable 1T'-phase group VIB transition metal dichalcogenide crystals, Nature Materials, 20 (2021) 1113-1120. [86] R. Jha, P.K. Guha, An effective liquid-phase exfoliation approach to fabricate tungsten disulfide into ultrathin two-dimensional semiconducting nanosheets, Journal of Materials Science, 52 (2017) 7256-7268. [87] P. Tonndorf, R. Schmidt, P. Böttger, X. Zhang, J. Börner, A. Liebig, M. Albrecht, C. Kloc, O. Gordan, D.R.T. Zahn, S. Michaelis de Vasconcellos, R. Bratschitsch, Photoluminescence emission and Raman response of monolayer MoS2, MoSe2, and WSe2, Opt. Express, 21 (2013) 4908-4916. [88] A. Sierra-Castillo, E. Haye, S. Acosta, C. Bittencourt, J.-F. Colomer, Synthesis and Characterization of Highly Crystalline Vertically Aligned WSe2 Nanosheets, Applied Sciences, 10 (2020) 874. [89] F. Bozheyev, K. Harbauer, C. Zahn, D. Friedrich, K. Ellmer, Highly (001)-textured p-type WSe2 Thin Films as Efficient Large-Area Photocathodes for Solar Hydrogen Evolution, Scientific Reports, 7 (2017) 16003. [90] X. Zhang, B. Liu, L. Gao, H. Yu, X. Liu, J. Du, J. Xiao, Y. Liu, L. Gu, Q. Liao, Z. Kang, Z. Zhang, Y. Zhang, Near-ideal van der Waals rectifiers based on all-two-dimensional Schottky junctions, Nature Communications, 12 (2021) 1522. | - |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/88895 | - |
dc.description.abstract | 與其他Ⅵ族過渡金屬二硫屬化物不同,二碲化鎢是一種屬於斜方晶系 Td 相的半金屬。憑藉其非凡的性質,如 Weyl 半金屬態、巨磁阻和壓力誘發超導,二碲化鎢引起了人們的極大興趣。儘管具有豐富的獨特性質,快速氧化卻阻礙了功能性二碲化鎢元件向高性能方向發展。
在本研究中,我們通過固相反應實現了凡得瓦限制輔助二碲化鎢之合成。為了觀察壓力誘導的相變並降低二碲化鎢的氧化率,我們引入石墨烯作為自下而上的石墨烯/二碲化鎢異質結構的壓力源和鈍化層。與其他合成方法相比,選區電子衍射(SAED)和 X 射線光電子能譜(XPS)揭示了凡得瓦限制輔助合成的二碲化鎢具有單晶和較低的氧化率。 為了展示自下而上的石墨烯/二碲化鎢異質結構的元件性能,我們進行了析氫反應實驗。此外,我們還展示了透過硫屬原子取代二碲化鎢進行其他Ⅵ族鎢屬過渡金屬二硫屬化物的合成,為自下而上的橫向異質結構鋪路,並揭示了未來電子元件的可能性。 | zh_TW |
dc.description.abstract | Unlike other group Ⅵ transition metal dichalcogenides (TMDCs), tungsten ditelluride (WTe2) is a semimetal with an orthorhombic Td phase. With its extraordinary properties, such as the Weyl semimetal state, giant magnetoresistance, and pressure-induced superconductivity, WTe2 has provoked tremendous interests. Although WTe2 owns fruitful distinctive characteristics, rapid oxidation hinders functional WTe2 devices toward high performance.
In this study, we realize the van der Waals confinement-assisted synthesis of WTe2 by solid-state reaction. To observe the pressure-induced phase transition and decreases the oxidation ratio of WTe2, graphene is introduced as the pressure source and the passivation layer for the bottom-up graphene/WTe2 heterostructure. Compared to WTe2 synthesized by other methods, van der Waals confinement-assisted WTe2 with single crystalline and lower oxidation ratio has been revealed by the selected area electron diffraction (SAED) and X-ray photoelectron spectroscopy (XPS). Hydrogen evolution reaction experiment is conducted to demonstrate the device performance of bottom-up graphene/WTe2 heterostructure. Besides, other group Ⅵ W -based TMDCs synthesized by WTe2 through atomic substitution are demonstrated, paving the way for the bottom-up lateral heterostructure and unveiling the feasibility for the future electronics. | en |
dc.description.provenance | Submitted by admin ntu (admin@lib.ntu.edu.tw) on 2023-08-16T16:14:56Z No. of bitstreams: 0 | en |
dc.description.provenance | Made available in DSpace on 2023-08-16T16:14:56Z (GMT). No. of bitstreams: 0 | en |
dc.description.tableofcontents | 口試委員審定書 I
致謝 II 中文摘要 IV ABSTRACT V CONTENTS VII LIST OF FIGURES IX LIST OF TABLES XII Chapter 1 Introduction 1 1.1 Two-dimensional Material 1 1.2 Transition Metal Dichalcogenides (TMDCs) 3 1.3 Tungsten Ditelluride (WTe2) 7 1.3.1 Synthesis Method 7 1.3.2 Phase Transition 11 1.3.3 Raman Fingerprint 12 1.3.4 Degradation 14 1.4 Van der Waals Confinement 15 1.5 Hydrogen Evolution Reaction (HER) 16 1.6 Motivation 17 Chapter 2 Experimental 18 2.1 Scheme of Experimental Process 18 2.2 Synthesizing Experiment 21 2.2.1 Synthesis of Graphene 21 2.2.2 Growth of WTe2 23 2.3 Transfer Process 30 2.4 Synthesis and Characterization Apparatus 32 2.4.1 Electrochemical Polishing System 32 2.4.2 Chemical Vapor Deposition 33 2.4.3 Electron-beam Evaporator 33 2.4.4 Raman Scattering Spectrometer 34 2.4.5 Atomic Force Microscope (AFM) 37 2.4.6 X-ray Photoelectron Spectroscopy (XPS) 39 2.4.7 Transmission Electron Microscope (TEM) 41 2.5 Device Fabrication 43 2.5.1 Photolithography System 44 2.5.2 Thermal Evaporator 46 2.5.3 Electrical Measurement System 48 2.5.4 Electrochemical Measurement 49 Chapter 3 Results and Discussion 51 3.1 Characterization and Analysis of WTe2 51 3.1.1 Pristine WTe2 52 3.1.2 Copper-assisted WTe2 54 3.1.3 Thin Film WTe2 56 3.1.4 Comparison of the Electrical Property 59 3.2 Van der Waals Confinement-assisted WTe2 61 3.2.1 Optical Micrograph and Raman Spectrum 61 3.2.2 Pressure-Induced Raman Shift 62 3.2.3 Crystal Structure 64 3.2.4 Stability 64 3.2.5 Quality Comparison 66 3.3 HER Performance 68 3.4 Atomic Substitution 70 3.4.1 WS2 Synthesized by Atomic Substitution 70 3.4.2 WSe2 Synthesized by Atomic Substitution 72 3.4.3 Outlook 74 Chapter 4 Conclusion 75 REFERENCE 76 APPENDIX 84 | - |
dc.language.iso | en | - |
dc.title | 以凡得瓦限制輔助二碲化鎢之生長 | zh_TW |
dc.title | Van der Waals Confinement-Assisted Synthesis of Tungsten Ditelluride | en |
dc.type | Thesis | - |
dc.date.schoolyear | 111-2 | - |
dc.description.degree | 碩士 | - |
dc.contributor.oralexamcommittee | 謝雅萍;丁初稷;邱聖貴 | zh_TW |
dc.contributor.oralexamcommittee | Ya-Ping Hsieh;Chu-Chi Ting;Sheng-Kuei Chiu | en |
dc.subject.keyword | 凡得瓦限制,二碲化鎢,石墨烯,固相反應,氧化, | zh_TW |
dc.subject.keyword | van der Waals confinement,tungsten ditelluride,graphene,solid-state reaction,oxidation, | en |
dc.relation.page | 84 | - |
dc.identifier.doi | 10.6342/NTU202303291 | - |
dc.rights.note | 同意授權(限校園內公開) | - |
dc.date.accepted | 2023-08-10 | - |
dc.contributor.author-college | 理學院 | - |
dc.contributor.author-dept | 物理學系 | - |
顯示於系所單位: | 物理學系 |
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