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標題: | 以三異丙基矽烷駢苯與鈣鈦礦多晶開發全色光感應電晶體 Development of Panchromatic Phototransistors Using Triisopropylsilyl-Acenes and Perovskite Polycrystals |
作者: | 張艾群 Ai-Chun Chang |
指導教授: | 陳文章 Wen-Chang Chen |
關鍵字: | 三異丙基矽烷駢苯,浮動式閘極,光感式電晶體,光記憶體,單重態裂變,自組裝單分子層,無機鈣態礦,光感測器, TIPS-acenes,floating gate electret,phototransistor,photomemory,singlet fission,self-assembly monolayer,inorganic perovskite,photodetector, |
出版年 : | 2023 |
學位: | 碩士 |
摘要: | 憑藉高寬頻和快速傳輸信號的能力,光已成為操作電子元件時極具吸引力的選擇。由於本身對於光訊號的靈敏度,光感式電晶體已然成為發展光電元件中最重要的角色之一。然而,傳統光感式電晶體的感測範圍通常僅限於特定的光譜範圍,限制了它們在實際環境中的應用性。為了解決上述的困境並推動光電子領域的發展,全色光感式電晶體的開發至關重要。本論文使用了有機小分子(第二章)和鈣鈦礦多晶薄膜(第三章)作為開發全色光感式電晶體的材料。上述材料因為其獨特的光電特性和溶液製程性使它們成為發展光感式電晶體時極具競爭力的選擇之一。
在第二章中,我們使用了三異丙基矽烷駢苯作為光感式電晶體中的駐極體,並使用了聚苯乙烯作為浮動式閘極中的絕緣體。三異丙基矽烷的結構使駢苯具有溶液製程性,而聚苯乙烯可以提高電荷存取的效率。在所研究的三種小分子之中,三異丙基矽烷四駢苯具有最好的記憶體效能和光響應,不僅在450 nm藍光的操作下展現了50 V的內存窗口,也能在長時間下(10000 秒)維持105的開關比,達到穩定資料保存的目標。三異丙基矽烷四駢苯出色的記憶體效果主要歸因於與半導體層良好的能階匹配。此外,其獨特的單重態裂變機制在照光下展現了動態平衡,延長了激子的壽命,有利於記憶體層與半導體層之間的電荷轉移。 在第三章中,我們首次在鈣鈦礦多晶薄膜光感式電晶體感測器採用了自組裝單分子層界面工程。不同自組裝單分子層的尾端官能基使得氧化鋁改質後有不同的表面能。較高的表面能有利於鈣鈦礦多晶薄膜的形成。在一系列磷酸自組裝單分子層之中,採用具有羥基的自組裝單分子層((4-羥基苯基)磷酸)改質後的鈣鈦礦多晶薄膜有更均勻的形貌及晶粒分布,改善的薄膜品質也使鈣鈦礦有更好的光致發光量子產率及電荷轉移效率。因此,利用(4-羥基苯基)磷酸改質後的鈣鈦礦多晶薄膜光感式電晶體在450 nm藍光照射下達到了高達0.8 cm2 V−1 s−1 的電子遷移率。除此之外,此鈣鈦礦多晶薄膜光感式電晶體也具備出色的感測器效能,在18 μW cm−2 的弱光條件下實現了小於14 ms的超高感測速度、5600 AW−1的高光響應、以及5.9 × 10^10 Jones的高偵測度,同時展示了穩定的重複操作性。我們成功利用引入自組裝單分子層後的低偶極矩、高載子轉移率、和匹配的能階開發了具備極佳光響應和感測器性能的鈣鈦礦多晶薄膜光感式電晶體。以上的研究不僅為全色光感式電晶體提供了新穎的概念,也顯示了全色光感式電晶體在光電元件應用的重要性。 With broad bandwidth and ability to transmit signals quickly, light has emerged as a highly attractive option for operating electronic devices. In particular, phototransistors have emerged as a promising candidate for constructing optoelectronic devices as they possess high sensitivity to light. However, conventional phototransistors are typically limited to narrow spectral ranges, which restricts their applicability in practical settings. To address this limitation, development of panchromatic phototransistors is highly desirable for advancing the field of optoelectronics. This thesis focuses on the development of panchromatic phototransistor-based devices using organic small molecules (Chapter 2) and perovskite polycrystalline films (Chapter 3). These materials were chosen for their unique photoelectric properties and their ability to be processed via solution, which makes them attractive alternatives for a range of optoelectronic applications. In Chapter 2, the use of TIPS-functionalized organic small molecules, including 9,10-bis[(triisopropylsilyl)ethynyl]anthracene (TIPS-3), 5,12-bis((triisopropylsilyl)ethynyl)tetracene (TIPS-4), and 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-5), as photogates in phototransistor memory devices were investigated. Polystyrene (PS) was employed as the insulator in the floating gate electrets to enhance charge trapping efficiency. The TIPS-functionalized structure allowed for solution-processable acenes, while PS facilitated efficient charge trapping. Among the studied materials, TIPS-4 demonstrated the most effective memory performance and photoresponse, with a stable current contrast of 105 over 104 s and a large shift in threshold voltage of 50 V to 450-nm light. The exceptional charge-trapping capability of TIPS-4 was attributed to favorable energy level alignment with the semiconducting layer. Furthermore, the significant photoresponse was related to the singlet fission to triplet photodynamics of TIPS-4, which displayed a delayed exciton lifetime, providing extensive time for charge transfer to the channel layer. Next, in Chapter 3, we explore the potential of interfacial engineering using self-assembled monolayers (SAMs) in enhancing the performance of CsPbBr3-Cs4PbBr6 phototransistors. SAMs with different tailoring groups exhibited different surface energy of the dielectric layers and resulted in decreased exciton lifetime of perovskite due to exciton transfer between CsPbBr3-Cs4PbBr6 and SAM. CsPbBr3-Cs4PbBr6 phototransistor modified with (4-hydroxyphenyl)phosphonic acid (OH) exhibited the highest electron mobility of 0.8 cm2 V−1 s−1 under 450-nm light illumination. Additionally, OH showed great detector performance, with ultrafast photoresponse of less than 14 ms, high photoresponsivity of 5600 AW−1, and high specific detectivity of 5.9 × 10^10 Jones under a low light intensity of 18 μW cm−2. Remarkable endurance and stability were also demonstrated. The excellent photoresponse and detector performance were attributed to the high surface energy of OH, the resultant uniform morphology of perovskite films, the high CTE, and favorable energy levels alignment. Our studies provide new prospects for panchromatic phototransistor-based devices, paving the way for the evolution of optoelectronics. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/88725 |
DOI: | 10.6342/NTU202300803 |
全文授權: | 同意授權(限校園內公開) |
顯示於系所單位: | 化學工程學系 |
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