請用此 Handle URI 來引用此文件:
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/88704
完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 謝馬利歐 | zh_TW |
dc.contributor.advisor | Mario Hofmann | en |
dc.contributor.author | 黃品儒 | zh_TW |
dc.contributor.author | Pin-Ju Huang | en |
dc.date.accessioned | 2023-08-15T17:26:31Z | - |
dc.date.available | 2023-11-09 | - |
dc.date.copyright | 2023-08-15 | - |
dc.date.issued | 2023 | - |
dc.date.submitted | 2023-08-01 | - |
dc.identifier.citation | [1] R. R. Schaller, "Moore's law: past, present and future," IEEE Spectrum, vol. 34, no. 6, pp. 52-59, 1997, doi: 10.1109/6.591665.
[2] "Moore's Law," Wikipedia, https://en.wikipedia.org/wiki/Moore%27s_law, (2023, June 26). [3] T. Wei, Z. Han, X. Zhong, Q. Xiao, T. Liu, and D. Xiang, "Two dimensional semiconducting materials for ultimately scaled transistors," iScience, vol. 25, no. 10, p. 105160, 2022/10/21/ 2022, doi: https://doi.org/10.1016/j.isci.2022.105160. [4] F. Zhang and J. Appenzeller, "Tunability of Short-Channel Effects in MoS2 Field-Effect Devices," Nano Letters, vol. 15, no. 1, pp. 301-306, 2015/01/14 2015, doi: 10.1021/nl503586v. [5] K. S. Novoselov et al., "Electric Field Effect in Atomically Thin Carbon Films," Science, vol. 306, no. 5696, pp. 666-669, 2004, doi: doi:10.1126/science.1102896. [6] B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, "Single-layer MoS2 transistors," Nature Nanotechnology, vol. 6, no. 3, pp. 147-150, 2011/03/01 2011, doi: 10.1038/nnano.2010.279. [7] M. Chhowalla, D. Jena, and H. Zhang, "Two-dimensional semiconductors for transistors," Nature Reviews Materials, vol. 1, no. 11, p. 16052, 2016/08/17 2016, doi: 10.1038/natrevmats.2016.52. [8] N. C. Wang, S. Sinha, B. Cline, C. D. English, G. Yeric, and E. Pop, "Replacing copper interconnects with graphene at a 7-nm node," in 2017 IEEE International Interconnect Technology Conference (IITC), 16-18 May 2017 2017, pp. 1-3, doi: 10.1109/IITC-AMC.2017.7968949. [9] K. Nagashio and A. Toriumi, "Density-of-States Limited Contact Resistance in Graphene Field-Effect Transistors," Japanese Journal of Applied Physics, vol. 50, no. 7R, p. 070108, 2011/07/20 2011, doi: 10.1143/JJAP.50.070108. [10] Y. Zheng, J. Gao, C. Han, and W. Chen, "Ohmic Contact Engineering for Two-Dimensional Materials," Cell Reports Physical Science, vol. 2, no. 1, p. 100298, 2021/01/20/ 2021, doi: https://doi.org/10.1016/j.xcrp.2020.100298. [11] C. Hu, Modern semiconductor devices for integrated circuits. Upper Saddle River, N.J.: Prentice Hall (in eng), 2010. [12] J. Bardeen, "Surface States and Rectification at a Metal Semi-Conductor Contact," Physical Review, vol. 71, no. 10, pp. 717-727, 05/15/ 1947, doi: 10.1103/PhysRev.71.717. [13] V. Heine, "Theory of Surface States," Physical Review, vol. 138, no. 6A, pp. A1689-A1696, 06/14/ 1965, doi: 10.1103/PhysRev.138.A1689. [14] L. Huang et al., "Role of defects in enhanced Fermi level pinning at interfaces between metals and transition metal dichalcogenides," Physical Review B, vol. 96, no. 20, p. 205303, 11/14/ 2017, doi: 10.1103/PhysRevB.96.205303. [15] C. Kim et al., "Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides," ACS Nano, vol. 11, no. 2, pp. 1588-1596, 2017/02/28 2017, doi: 10.1021/acsnano.6b07159. [16] C. Gong, L. Colombo, R. M. Wallace, and K. Cho, "The Unusual Mechanism of Partial Fermi Level Pinning at Metal–MoS2 Interfaces," Nano Letters, vol. 14, no. 4, pp. 1714-1720, 2014/04/09 2014, doi: 10.1021/nl403465v. [17] D. S. Schulman, A. J. Arnold, and S. Das, "Contact engineering for 2D materials and devices," Chemical Society Reviews, 10.1039/C7CS00828G vol. 47, no. 9, pp. 3037-3058, 2018, doi: 10.1039/C7CS00828G. [18] J. Kang, W. Liu, and K. Banerjee, "High-performance MoS2 transistors with low-resistance molybdenum contacts," Applied Physics Letters, vol. 104, no. 9, 2014, doi: 10.1063/1.4866340. [19] C. D. English, G. Shine, V. E. Dorgan, K. C. Saraswat, and E. Pop, "Improving contact resistance in MoS2 field effect transistors," in 72nd Device Research Conference, 22-25 June 2014 2014, pp. 193-194, doi: 10.1109/DRC.2014.6872363. [20] Y. Matsuda, W.-Q. Deng, and W. A. Goddard, III, "Contact Resistance for “End-Contacted” Metal−Graphene and Metal−Nanotube Interfaces from Quantum Mechanics," The Journal of Physical Chemistry C, vol. 114, no. 41, pp. 17845-17850, 2010/10/21 2010, doi: 10.1021/jp806437y. [21] Z. Yang et al., "A Fermi-Level-Pinning-Free 1D Electrical Contact at the Intrinsic 2D MoS2–Metal Junction," Advanced Materials, vol. 31, no. 25, p. 1808231, 2019, doi: https://doi.org/10.1002/adma.201808231. [22] B. H. Moon et al., "Junction-Structure-Dependent Schottky Barrier Inhomogeneity and Device Ideality of Monolayer MoS2 Field-Effect Transistors," ACS Applied Materials & Interfaces, vol. 9, no. 12, pp. 11240-11246, 2017/03/29 2017, doi: 10.1021/acsami.6b16692. [23] P.-C. Shen et al., "Ultralow contact resistance between semimetal and monolayer semiconductors," Nature, vol. 593, no. 7858, pp. 211-217, 2021/05/01 2021, doi: 10.1038/s41586-021-03472-9. [24] A. S. Chou et al., "Antimony Semimetal Contact with Enhanced Thermal Stability for High Performance 2D Electronics," in 2021 IEEE International Electron Devices Meeting (IEDM), 11-16 Dec. 2021 2021, pp. 7.2.1-7.2.4, doi: 10.1109/IEDM19574.2021.9720608. [25] Y. Nguyen et al., "Characterizing carrier transport in nanostructured materials by force-resolved microprobing," Scientific Reports, vol. 10, no. 1, p. 14177, 2020/08/25 2020, doi: 10.1038/s41598-020-71147-y. [26] K. Technology, "APS Manual," Manual 2019. [27] G. K. Reeves and H. B. Harrison, "Obtaining the specific contact resistance from transmission line model measurements," IEEE Electron Device Letters, vol. 3, no. 5, pp. 111-113, 1982, doi: 10.1109/EDL.1982.25502. [28] S. Grover, "Effect of Transmission Line Measurement (TLM) Geometry on Specific Contact Resistivity Determination," Theory of Computing Systems \/ Mathematical Systems Theory, p. 35, 2016. [29] M. Scimeca, S. Bischetti, H. K. Lamsira, R. Bonfiglio, and E. Bonanno, "Energy Dispersive X-ray (EDX) microanalysis: A powerful tool in biomedical research and diagnosis," (in eng), Eur J Histochem, vol. 62, no. 1, p. 2841, Mar 15 2018, doi: 10.4081/ejh.2018.2841. [30] M. Rycenga et al., "Controlling the Synthesis and Assembly of Silver Nanostructures for Plasmonic Applications," Chemical Reviews, vol. 111, no. 6, pp. 3669-3712, 2011/06/08 2011, doi: 10.1021/cr100275d. [31] K.-C. Lee, S.-J. Lin, C.-H. Lin, C.-S. Tsai, and Y.-J. Lu, "Size effect of Ag nanoparticles on surface plasmon resonance," Surface and Coatings Technology, vol. 202, no. 22, pp. 5339-5342, 2008/08/30/ 2008, doi: https://doi.org/10.1016/j.surfcoat.2008.06.080. [32] B.-K. Kim et al., "Origins of genuine Ohmic van der Waals contact between indium and MoS2," npj 2D Materials and Applications, vol. 5, no. 1, p. 9, 2021/01/08 2021, doi: 10.1038/s41699-020-00191-z. [33] T. Kulikova, A. Mayorova, A. Shubin, V. Bykov, and K. Shunyaev, "Bismuth-indium system: thermodynamic properties of liquid alloys," Kovove Materialy, vol. 53, no. 3, pp. 133-137, 2015. [34] R. K. Khisamov et al., "Work function of chemical compounds of aluminum-magnesium system," IOP Conference Series: Materials Science and Engineering, vol. 1008, no. 1, p. 012032, 2020/12/01 2020, doi: 10.1088/1757-899X/1008/1/012032. [35] R. F. Minibaev, A. A. Bagatur’yants, D. I. Bazhanov, A. A. Knizhnik, and M. V. Alfimov, "First-principles investigation of the electron work function for the (001) surface of indium oxide In2O3 and indium tin oxide (ITO) as a function of the surface oxidation level," Nanotechnologies in Russia, vol. 5, no. 3, pp. 185-190, 2010/04/01 2010, doi: 10.1134/S1995078010030055. [36] A. Allain, J. Kang, K. Banerjee, and A. Kis, "Electrical contacts to two-dimensional semiconductors," Nature Materials, vol. 14, no. 12, pp. 1195-1205, 2015/12/01 2015, doi: 10.1038/nmat4452. | - |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/88704 | - |
dc.description.abstract | 摩爾定律預測同一晶片上的晶體管數量將每1.5年增加一倍,自1965年提出以來,至今依然有效。然而,隨著矽基元件規模達到奈米級大小,已經達到了許多物理本身的理論限制。石墨烯和二硫化鉬(MoS2)等二維材料擁有許多新穎的性質,例如其原子級厚度,使其具有替代矽的潛力。然而,金屬電極與MoS2等二維材料之間的接觸電阻遠遠高於三維傳統的矽半導體。高接觸電阻的問題顯著抑制了金屬電極和二維半導體或石墨烯通道之間的電荷注入,因此阻礙了二維半導體元件未來的發展。以二硫化鉬為例,表面的電偶極生成、缺陷和金屬引起之間隙能階(metal-induced gap states),造成費米能階被釘住,使的蕭基能障高度(Schottky barrier height)無法隨著金屬接觸之功函數調整。
我們開發了一種新的蒸鍍金屬電極的技術,使我們能夠在一個樣品上製造由兩種不同金屬,以不同比例組成的電極。接下來我們可以對這些合金電極和二維材料的接觸進行電性量測,以比較何種金屬有較低的接觸電阻,或找出是否有任何特定組成的合金可以改善電荷注入並降低接觸電阻。在接下來的實驗中,我們成功地進行了鈦和銀對於石墨烯的接觸電阻的優劣比較,以及發現了一種特定的銦和鉍金屬元素組成的合金電極,可以改善MoS2和電極的電荷注入效率。 | zh_TW |
dc.description.abstract | Moore’s Law, which predicts that the numbers of transistors on the same chip will increase by 2-fold every 1.5 years, has remained valid since it was proposed in 1965. However, as the scale of the Silicon based devices reaches a few nanometers, many theoretical limits have also been reached. 2D materials, such as graphene and MoS2, have the potential of replacing Silicon-based devices due to their atomic-scale thickness and other interesting properties. However, the contact resistance between metal contacts and 2D materials such as MoS2 is way higher than that of the Silicon bulk counterpart. This problem of high contact resistance significantly suppresses the charge injection between the metal electrode and the 2D-semiconductor channel and therefore limits future developments of 2D-devices. Take an example from MoS2, the surface dipole formation, defects, and metal-induced gap states (MIGS) cause fermi level pinning, which means that we can no longer adjust the Schottky barrier height by changing the work function of our metal contacts.
We developed a new deposition technique which allows us to produce a matrix of electrodes made by different compositions of two metals on a single sample. We can then characterize these alloy contacts either to compare the contact resistance of the two metals, or to find out if there is any specific composition of alloy that can improve the charge injection and lower the contact resistance. In the following experiments, we successfully compared the contact resistance of graphene between Titanium and Silver, and identified a specific composition of Indium and Bismuth which improves the charge injection between MoS2 and our contacts. | en |
dc.description.provenance | Submitted by admin ntu (admin@lib.ntu.edu.tw) on 2023-08-15T17:26:31Z No. of bitstreams: 0 | en |
dc.description.provenance | Made available in DSpace on 2023-08-15T17:26:31Z (GMT). No. of bitstreams: 0 | en |
dc.description.tableofcontents | 1.INTRODUCTION 1
1.1 Issue of High Contact Resistance of Metal-2D materials 4 1.2 Fermi Level Pinning 9 1.3 Methods of Depinning the Fermi Level 11 1.3.1 Insulating layer 11 1.3.2 Hybridization and Phase Engineering 12 1.3.3 Edge Contact 14 1.4 Role of Semimetal in reducing Contact Resistance of TMDs 15 1.5 Attempt to Analyze M-MoS2 contact using Density Functional Theory 18 1.6 Introducing Novel Method to Examine Contact Resistance 22 2.EXPERIMENTAL METHODS 25 2.1 Growth of MoS2 and the Deposition of Metal 25 2.1.1 Chemical Vapor Deposition 25 2.1.2 Photolithography 26 2.3 Thermal Evaporation 28 2.4 Atomic Force Microscopy 28 2.5 Kelvin Probe 29 2.6 UV-visible Spectrum 31 2.6.1 Localized Surface Plasmonic Resonance 31 2.6.2 Absorption spectra of UV-Visible light 32 2.7 Transmission Line Measurement 33 2.8 Energy Dispersive X-Ray Spectroscopy 35 3.RESULT AND DISCUSSIONS 36 3.1 Gradient Deposition 36 3.1.1 Producing Gradient Samples 36 3.1.2 Radial Gradient Deposition 40 3.1.3 Tangential Gradient Deposition 42 3.1.4 Controlling the Stepper Motor 48 3.2 Evaluating the Validity of the Gradient deposition with Experimental Instruments 49 3.2.1 By Absorption spectra of UV-visible Range 49 3.2.2 By AFM 53 3.3 First Test: Ti-Ag Gradient Deposition of Graphene Edge Contact 55 3.4 Gradient Deposition of In-Bi to Contact MoS2 64 3.4.1 Work Function Analysis of Bi-In Gradient 66 3.4.2 Resistance Measurements of Bi-In gradient Contacts on MoS2 72 4.CONCLUSION AND FUTURE WORKS 82 References 84 | - |
dc.language.iso | en | - |
dc.title | 探討與二維材料接觸之金屬接面成分以改善電荷載子的注入 | zh_TW |
dc.title | Exploring the Compositions of Contacts on 2D Materials to Improve Charge Injection | en |
dc.type | Thesis | - |
dc.date.schoolyear | 111-2 | - |
dc.description.degree | 碩士 | - |
dc.contributor.oralexamcommittee | 謝雅萍;丁初稷;邱聖貴 | zh_TW |
dc.contributor.oralexamcommittee | Ya-Ping Hsieh;Chu-Chi Ting;Sheng-Kuei Chiu | en |
dc.subject.keyword | 二維材料,二硫化鉬,石墨烯,接觸電阻,蕭基能障,費米能階被釘住,鉍, | zh_TW |
dc.subject.keyword | 2D materials,MoS2,graphene,contact resistance,Schottky barrier,Fermi level pinning,Bismuth, | en |
dc.relation.page | 87 | - |
dc.identifier.doi | 10.6342/NTU202302570 | - |
dc.rights.note | 同意授權(限校園內公開) | - |
dc.date.accepted | 2023-08-04 | - |
dc.contributor.author-college | 理學院 | - |
dc.contributor.author-dept | 物理學系 | - |
顯示於系所單位: | 物理學系 |
文件中的檔案:
檔案 | 大小 | 格式 | |
---|---|---|---|
ntu-111-2.pdf 授權僅限NTU校內IP使用(校園外請利用VPN校外連線服務) | 4.77 MB | Adobe PDF | 檢視/開啟 |
系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。