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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 胡振國 | zh_TW |
| dc.contributor.advisor | Jenn-Gwo Hwu | en |
| dc.contributor.author | 林郁芹 | zh_TW |
| dc.contributor.author | Yu-Cin Lin | en |
| dc.date.accessioned | 2023-08-08T16:41:21Z | - |
| dc.date.available | 2023-11-09 | - |
| dc.date.copyright | 2023-08-08 | - |
| dc.date.issued | 2023 | - |
| dc.date.submitted | 2023-06-17 | - |
| dc.identifier.citation | [1] Y. -H. Tai, C. -C. Tu and S. Yeh, “Using Amorphous Silicon Gap-Type Thin Film Transistor as Ambient Light Sensors and Proximity Sensors for Smartphones,” IEEE Sensors Lett., vol. 3, no. 10, pp. 1-4, Oct. 2019, Art no. 1500304, doi: 10.1109/LSENS.2019.2940763.
[2] D. Joos, “Integrated EMI Detector as Essential Safety Mechanism in Automotive Sensor Applications,” ISEMC, 2022, pp. 451-456, doi: 10.1109/EMCEurope51680.2022.9901193. [3] F. -H. Chen et al., “Compact Optical Sensor Based on Thin-Film Transistors for Large Interactive Displays Using Red/Green/Blue Laser Pointers,” IEEE Electron Device Lett., vol. 41, no. 6, pp. 876-879, June 2020, doi: 10.1109/LED.2020.2987031. [4] A. Radoi, M. Dragoman and D. Dragoman, “Plasmonic ambient light sensing with MoS2-graphene heterostructures,” Phys. E, vol. 85, pp. 164-168, Jan. 2017, doi: 10.1016/j.physe.2016.08.026. [5] X. Mo et al., “Highly-efficient all-inorganic lead-free 1D CsCu2I3 single crystal for white-light emitting diodes and UV photodetection,” Nano Energy, vol. 81, pp. 105570, Mar. 2021, doi: 10.1016/j.nanoen.2020.105570. [6] W. Huang et al., “Facile fabrication and characterization of two-dimensional bis-muth (III) sulfide nanosheets for high-performance photodetector applications under ambient conditions,” Nanoscale, vol. 10, no. 5, pp. 2404-2412, Dec. 2017, doi: 10.1039/C7NR09046C. [7] Y. -K. Lin and J. -G. Hwu, “Photosensing by Edge Schottky Barrier Height Mod-ulation Induced by Lateral Diffusion Current in MOS(p) Photodiode,” IEEE Trans. Electron Devices, vol. 61, no. 9, pp. 3217- 3222, Sept. 2014, doi: 10.1109/TED.2014.2334704. [8] C.-H. Lin and C. W. Liu, “Metal-insulator-semiconductor photodetectors,” Sen-sors, vol. 10, no. 10, pp. 8797–8826, Sep. 2010, doi: 10.3390/s101008797. [9] C.-F. Yang and J.-G. Hwu, “Role of fringing field on the electrical characteristics of metal-oxide-semiconductor capacitors with co-planar and edge-removed ox-ides,” AIP Adv., vol. 6, no. 12, Dec. 2016, doi: 10.1063/1.4971845. [10] J. Wilson, J. F. Hawkes, Optoelectronics an introduction, 3rd ed., Prentice Hall, pp. 324-329, 1998. [11] C. -S. Liao and J. -G. Hwu, “Subthreshold Swing Reduction by Double Exponen-tial Control Mechanism in an MOS Gated-MIS Tunnel Transistor,” IEEE Trans. Electron Devices, vol. 62, no. 6, pp. 2061-2065, June 2015, doi: 10.1109/TED.2015.2424245. [12] J. -Y. Lin, “Effects of Neighboring Oxide Charge on The Characteristics of Met-al-Insulator-Semiconductor Tunnel Diode,” M. S. thesis, Dept. Elect. Eng. Nat. Taiwan Univ. Taipei, Taiwan, R.O.C., 2022, doi: 10.6342/NTU202201070. [13] W. -T. Hou and J.-G. Hwu, “Photo response enhancement in MIS(p) tunnel diode via coupling effect by controlling neighboring device inversion level,” ECS J. Solid State Sci. Technol., vol. 6, no. 10, pp. Q143–Q147, Nov. 2017, doi: 10.1149/2.0031712jss. [14] Y. -H. Chen and J. -G. Hwu, “Light Sensing Enhancement and Energy Saving Im-provement in Concentric Double-MIS(p) Tunnel Diode Structure With Inner Gate Outer Sensor Operation,” IEEE Trans. Electron Devices, vol. 65, no. 11, pp. 4910-4915, Nov. 2018, doi: 10.1109/TED.2018.2871071. [15] C. -Y. Huang and J. -G. Hwu, “Enhanced Photo Sensing and Lowered Power Con-sumption in Concentric MIS Devices by Monitoring Outer Ring Open-Circuit Voltage With Biased Inner Gate,” IEEE Trans. Electron Devices, vol. 68, no. 7, pp. 3417-3423, July 2021, doi: 10.1109/TED.2021.3082813. [16] M. -H. Yang and J. -G. Hwu, "Influence of neighboring coupling on met-al-insulator-semiconductor (MIS) deep-depletion tunneling current via Schottky barrier height modulation mechanism", J. Appl. Phys., vol. 121, no. 15, pp. 154504-1–154504-6, Apr. 2017, doi: 10.1063/1.4981891. [17] S. M. Sze and K. K. Ng, Physics of Semiconductor Devices, New York, NY, USA:Wiley, pp. 671-674, 2007. [18] Z. Bielecki et al., “Review of photodetectors characterization methods,” in Bull. Pol. Acad. Sci. Tech. Sci., 2022, vol. 70, no. 2, doi: 10.24425/bpasts.2022.140534 [19] C.-H. Oh, J.-I. Shim, and D.-S. Shin, “Current–voltage characteristics of InGaN/GaN blue light-emitting diodes investigated by photovoltaic parameters,” Jpn. J. Appl. Phys., vol. 58, no. 1, Nov. 2018, doi: 10.7567/1347-4065/aae92f. [20] M. A. Green, F. D. King and J. Shewchun, “Minority carrier MIS tunnel diodes and their application to electron-and photo-voltaic energy conversion—I. Theory,” Jpn. J. Appl. Phys., vol. 17, no. 6, pp. 551-561, June 1974, doi: 10.1016/0038-1101(74)90172-5. [21] M. A. Green, F. D. King and J. Shewchun, “Minority carrier MIS tunnel diodes and their application to electron-and photo-voltaic energy conversion—II. Ex-periment,” Jpn. J. Appl. Phys., vol. 17, no. 6, pp. 563-572, June 1974, doi: 10.1016/0038-1101(74)90173-7. [22] Yu-Hsuan Chen and Jenn-Gwo Hwu, “Roles of Inner and Outer Fringe and Asymmetric Coupling Effect in Concentric Double-MIS(p) Tunneling Diodes,” Electrochemical Society Transactions, Vol.89, No.3, 121~131, Jun. 2019, doi: 10.1149/MA2019-01/23/1199. | - |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/88186 | - |
| dc.description.abstract | 本篇論文主要探討同心圓金氧半穿隧二極體兩鄰近電極間的耦合效應以及耦合效應在光感測方面的影響及其應用。我們探討了一般元件以及去除邊緣氧化層之元件的特性差異,並利用短路電流量測證明耦合效應的存在,也觀察到在不同的閘極偏壓下,有不同的耦合效應機制,對元件電流造成的變化也不同。在累積區的耦合效應是由電子濃度梯度形成的擴散電流主導,而在深空乏區為邊緣電場所造成的電流來主導。其中,去除邊緣氧化物的元件在深空乏區由於邊緣電場分布較窄而缺乏耦合效應。
另外,以量測短路電流作為光感測的參數可以保持較好的線性度為動機,將內圓閘極施加正偏壓,一般元件的外環短路電流可以線性地隨著光強度增加由負增加到正,這種利用耦合效應由負切換到正的現象對於光感測辨識的靈敏度是很大的優勢;至於去除邊緣氧化層的元件,我們發現量測基板電流可以得到暗電流以內圓電流為主導、光電流以外環電流為主導的高光暗電流比。最後,除了短路電流量測,還提出了將基板浮動的特殊操作,藉由這種方式得到在正偏壓下以及負偏壓下都可以操作的光感測方式。相信本篇論文的分析對於光感測發展有其重要性。 | zh_TW |
| dc.description.abstract | This thesis explores the coupling effect between two neighboring electrodes of the concentric MIS(p) tunnel diode and its impact on photo sensing. Specifically, we dis-cuss the differences between general devices and devices with edge-removed oxide and demonstrate the existence of the coupling effect through short-circuit current. The coupling effect is dominated by distinct mechanisms in different regions. In the accu-mulation region, the diffusion current formed by the electron concentration gradient is the dominant mechanism, while in the deep depletion region, the fringe field domi-nates. However, devices with edge-removed oxide lack coupling effects in the deep depletion region due to the narrower fringing field distribution.
In addition, using short-circuit current as the photo sensing parameter can main-tain good linearity. By applying a positive bias to the inner gate, the short-circuit cur-rent of a general outer ring device increases linearly from negative to positive with increasing light intensity. This variable current polarity due to coupling effects pro-vides a notable sensitivity advantage. As for the devices with edge-removed oxide, measuring the substrate current can obtain a higher light-to-dark current ratio, because the photocurrent is dominated by the outer ring, and the dark current is dominated by the inner center. Additionally, we perform a special operation of substrate floating that enables our photo sensing can operate under both positive and negative bias voltages. It is believed that the analysis of this thesis has important implications for the devel-opment of photo sensing. | en |
| dc.description.provenance | Submitted by admin ntu (admin@lib.ntu.edu.tw) on 2023-08-08T16:41:21Z No. of bitstreams: 0 | en |
| dc.description.provenance | Made available in DSpace on 2023-08-08T16:41:21Z (GMT). No. of bitstreams: 0 | en |
| dc.description.tableofcontents | 口試委員會審定書 I
誌謝 II 摘要 III Abstract IV Contents VI Figure Captions VIII Chapter 1 Introduction 1 1-1 Motivation and Thesis Organization 2 1-2 Co-Planar and Edge-Removed Oxides 3 1-3 I-V Characteristics of MIS(p) Tunnel Diodes 4 1-3-1 Effect of Oxide Thickness 5 1-3-2 Fringing Field Effect 6 1-4 MIS(p) Tunnel Diodes for Photodetection 7 1-5 Photo Sensing Parameters 9 1-6 Summary 12 Chapter 2 Lateral Coupling Effect in Concentric MIS(p) Structure 21 2-1 Introduction 22 2-2 Experimental 22 2-3 Results and Discussion 23 2-3-1 Analysis of Coupling Effect by Short Circuit Current 23 2-3-2 Co-Planar Oxide 24 2-3-3 Edge-Removed Oxide 26 2-4 Summary 27 Chapter 3 Photo Sensing in Concentric Devices 35 3-1 Introduction 36 3-2 Short-Circuit Operation of Co-Planar Oxide 36 3-2-1 Current Polarity Changeable 36 3-2-2 Linear Photodetectivity 37 3-2-3 Power Consumption 38 3-3 Short-Circuit Operation of Edge-Removed Oxide Devices 39 3-3-1 Negligible Dark Current 39 3-3-2 Substrate Current Depending on Device Size 40 3-4 Substrate Floating Operation 41 3-5 Summary 44 Chapter 4 Conclusion and Future Work 61 4-1 Conclusion 62 4-2 Future Work 64 4-2-1 Experimental Limits 64 4-2-2 Effect of Device Size 64 4-2-3 Effect of Gap Oxide Thickness 65 References 69 | - |
| dc.language.iso | en | - |
| dc.subject | 耦合效應 | zh_TW |
| dc.subject | 邊緣電場 | zh_TW |
| dc.subject | 光感測器 | zh_TW |
| dc.subject | 短路電流 | zh_TW |
| dc.subject | 線性度 | zh_TW |
| dc.subject | 浮動基板 | zh_TW |
| dc.subject | 金氧半穿隧二極體 | zh_TW |
| dc.subject | coupling effect | en |
| dc.subject | fringing field | en |
| dc.subject | photo sensor | en |
| dc.subject | short-circuit current | en |
| dc.subject | linearity | en |
| dc.subject | floating substrate | en |
| dc.subject | MIS tunnel diodes | en |
| dc.title | 同心圓金氧半穿隧二極體耦合效應在光傳感中的應用 | zh_TW |
| dc.title | Applications of Concentric MIS(p) Tunnel Diode Coupling Effect on Photo Sensing | en |
| dc.type | Thesis | - |
| dc.date.schoolyear | 111-2 | - |
| dc.description.degree | 碩士 | - |
| dc.contributor.oralexamcommittee | 吳幼麟;胡璧合 | zh_TW |
| dc.contributor.oralexamcommittee | You-Lin Wu;Pi-Ho Hu | en |
| dc.subject.keyword | 金氧半穿隧二極體,耦合效應,邊緣電場,光感測器,短路電流,線性度,浮動基板, | zh_TW |
| dc.subject.keyword | MIS tunnel diodes,coupling effect,fringing field,photo sensor,short-circuit current,linearity,floating substrate, | en |
| dc.relation.page | 85 | - |
| dc.identifier.doi | 10.6342/NTU202300777 | - |
| dc.rights.note | 同意授權(全球公開) | - |
| dc.date.accepted | 2023-06-19 | - |
| dc.contributor.author-college | 電機資訊學院 | - |
| dc.contributor.author-dept | 電子工程學研究所 | - |
| 顯示於系所單位: | 電子工程學研究所 | |
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