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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 曾雪峰 | zh_TW |
| dc.contributor.advisor | Snow H. Tseng | en |
| dc.contributor.author | 曾彥紳 | zh_TW |
| dc.contributor.author | Yen-Shen Tseng | en |
| dc.date.accessioned | 2023-08-01T16:29:38Z | - |
| dc.date.available | 2023-11-09 | - |
| dc.date.copyright | 2023-08-01 | - |
| dc.date.issued | 2023 | - |
| dc.date.submitted | 2023-06-29 | - |
| dc.identifier.citation | [1] Bourdillon, A., et al., A critical condition in Fresnel diffraction used for ultra-high resolution lithographic printing. Journal of Physics D: Applied Physics, 2000. 33(17): p. 2133.
[2] Deuter, V., et al., Computational proximity lithography with extreme ultraviolet radiation. Optics express, 2020. 28(18): p. 27000-27012. [3] Muffoletto, R.P., J.M. Tyler, and J.E. Tohline, Shifted Fresnel diffraction for computational holography. Optics Express, 2007. 15(9): p. 5631-5640. [4] Nesse, T., I. Simonsen, and B. Holst, Nanometer-resolution mask lithography with matter waves: Near-field binary holography. Physical Review Applied, 2019. 11(2): p. 024009. [5] Tan, X., et al., One-step mask-based diffraction lithography for the fabrication of 3D suspended structures. Nanoscale Research Letters, 2018. 13: p. 1-9. [6] Mack, C., Photoresist development. Fundamental Principles of Optical Lithography: The Science of Microfabrication, 2008: p. 257-296. [7] Tobey, A., Wafer stepper steps up yield and resolution in IC lithography. 1979. [8] Lyman, J., Optical lithography refuses to die. Electronics, 1985. 58(40): p. 36-39. [9] Fiebach, A., A. Glitzky, and A. Linke, Uniform global bounds for solutions of an implicit Voronoi finite volume method for reaction–diffusion problems. Numerische Mathematik, 2014. 128: p. 31-72. [10] Fuhrmann, J., et al., Acid diffusion effects between resists in freezing processes used for contact hole patterning. Microelectronic engineering, 2010. 87(5-8): p. 951-954. [11] Fiebach, A., A. Glitzky, and A. Linke, Convergence of an implicit V oronoi finite volume method for reaction–diffusion problems. Numerical Methods for Partial Differential Equations, 2016. 32(1): p. 141-174. [12] Thompson, L. and M. Bowden, The lithographic process: the physics. 1983, ACS Publications. [13] Hu, Y., et al. Research on photo-alignment process of liquid crystal. in 10th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced and Extreme Micro-Nano Manufacturing Technologies. 2021. SPIE. [14] Dill, F.H., et al., Characterization of positive photoresist. IEEE Transactions on electron devices, 1975. 22(7): p. 445-452. [15] Shaw, J.M., et al., Negative photoresists for optical lithography. IBM journal of Research and Development, 1997. 41(1.2): p. 81-94. [16] Popovic, Z.D., R.A. Sprague, and G.N. Connell, Technique for monolithic fabrication of microlens arrays. Applied optics, 1988. 27(7): p. 1281-1284. [17] Sangwal, K., Etching of crystals: theory, experiment and application. 2012: Elsevier. [18] Voelkel, R. Micro-optics: enabling technology for illumination shaping in optical lithography. in Optical Microlithography XXVII. 2014. SPIE. [19] Meiling, H., et al. Development of the ASML EUV alpha demo tool. in Emerging Lithographic Technologies IX. 2005. International Society for Optics and Photonics. [20] Chopra, J., Analysis of lithography based approaches in development of semi conductors. arXiv preprint arXiv:1502.05887, 2015. [21] Harriott, L.R., Limits of lithography. Proceedings of the IEEE, 2001. 89(3): p. 366-374. [22] de Zwart, G., et al. Performance of a step-and-scan system for DUV lithography. in Optical Microlithography X. 1997. International Society for Optics and Photonics. | - |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/88029 | - |
| dc.description.abstract | 近年來，由於疫情COVID-19影響和供應鏈短缺，並且伴隨著各種大量物聯網、車用半導體、雲端伺服器和深度學習伴隨著大量應用，因而造成半導體[2,3]需求大增，各國積極建設自己國家的半導體廠。其中，在中美貿易情況的惡劣環境下，中國大陸使用DUV可見光光刻機(193 nm波長光源)，即使在良率極低的情況下，依然曝出7 nm製程節點，這結果更是令人興奮。在這份研究中，我們使用Fresnel 所提出的光學繞射理論[1,4,5]，並搭配開發電腦MATLAB程式做數值計算，來計算並模擬分析DUV可見光光刻機在曝光7 nm製程電路設計圖案在光阻裡的模擬結果。希望能更進一步找出並了解DUV可見光光刻機曝光時候的7 nm製程下良率的最佳製程參數配置。 | zh_TW |
| dc.description.abstract | In this research, we used Matlab to simulate numerical calculation for the 7-nanometer deep ultraviolet (DUV) lithography process by the Fresnel diffraction theory. We used a 193-nanometer wavelength to etch the wafer pattern which was a simple vertical parallel arrangement of plural lines. As a result, we found the basic requirement for the 7-nanometer lithography process. It represented that the Fresnel propagation distance parameter had to meet 200-micrometer to 500-micrometer. We hoped it could be the suggestion for researchers or engineers to apply the DUV lithography process. | en |
| dc.description.provenance | Submitted by admin ntu (admin@lib.ntu.edu.tw) on 2023-08-01T16:29:38Z No. of bitstreams: 0 | en |
| dc.description.provenance | Made available in DSpace on 2023-08-01T16:29:38Z (GMT). No. of bitstreams: 0 | en |
| dc.description.tableofcontents | 致謝............................................................................................... II
中文摘要............................................................................................. III ABSTRACT ........................................................................................... IV 目錄................................................................................................. V 圖目錄............................................................................................... VI 表目錄............................................................................................... VII 第一章 序論 .......................................................................................... 1 1.1 研究動機.......................................................................................... 1 第二章 研究背景........................................................................................ 2 2.1 光學光刻與半導體製程的發展................................................................. 2 2.2 光刻機中使用之光學系統介紹................................................................. 6 2.3 DUV及EUV的介紹 ............................................................................... 11 第三章 模擬方法 ....................................................................................... 13 3.1 光學繞射光柵介紹................................................................................... 13 3.2 Fresnel method .................................................................................. 20 第四章 模擬結果分析 .................................................................................. 23 4.1 DUV顯影結果 ...................................................................................... 24 4.2 EUV顯影結果 ...................................................................................... 30 第五章 結論與未來展望 ................................................................................. 36 5.1 結論............................................................................................. 36 參考資料............................................................................................. 36 | - |
| dc.language.iso | zh_TW | - |
| dc.subject | Fresnel | zh_TW |
| dc.subject | Fresnel | en |
| dc.title | 透過Fresnel 光學模擬來找出先進節點7奈米製程的最佳焦距製程參數範圍 | zh_TW |
| dc.title | Optimal focal length search of advanced process nodes in 7nm lithography process based on numerical calculation of the Fresnel method | en |
| dc.type | Thesis | - |
| dc.date.schoolyear | 111-2 | - |
| dc.description.degree | 碩士 | - |
| dc.contributor.oralexamcommittee | 黃定洧;蕭惠心 | zh_TW |
| dc.contributor.oralexamcommittee | Ding-wei Huang;Hui-Hsin Hsiao | en |
| dc.subject.keyword | Fresnel, | zh_TW |
| dc.subject.keyword | Fresnel, | en |
| dc.relation.page | 38 | - |
| dc.identifier.doi | 10.6342/NTU202301175 | - |
| dc.rights.note | 同意授權(限校園內公開) | - |
| dc.date.accepted | 2023-06-30 | - |
| dc.contributor.author-college | 電機資訊學院 | - |
| dc.contributor.author-dept | 光電工程學研究所 | - |
| dc.date.embargo-lift | 2028-06-26 | - |
| 顯示於系所單位： | 光電工程學研究所 | |
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