高溫濺鍍生長氮氧化鎵於多晶矽基板上之發光二極體特性研究

Abstract

此論文主要探討利用射頻濺鍍系統及原子層沉積系統，透過量測系統討論發光二極體特性，製程上透過加熱基板溫度生長氮氧化鎵於多晶矽基板上，並利用光罩的圖形設計、改變濺鍍生長溫度及厚度、快速熱退火(Rapid thermal anneal，RTA)、氧化銦錫(ITO)共振特性探討及側壁保護改善電流等實驗，經過電性量測、光譜量測及ITO電阻率、穿透率比較後，製作出發光效率高的色心自發光二極體。 內容分為四部分，第一部分為介紹色心自發光二極體及Fabry-Perot共振腔原理；第二部分為製程機台介紹，包含濺鍍機、原子層沉積系統、量測系統及研磨機；第三部分為製程設計及完整製程步驟；第四部分為有助於特性優化的製程討論及電性與發光光譜分析，印證實驗結果。 有別於傳統GaN LED用藍光激發螢光粉或量子點材料產生指定波長的光譜，吾人以自身設計的製程方式與步驟製作色心自發光二極體產生特定波長於黃綠光波段(550nm)，首先先將元件生長於特殊磊晶之p-poly Si基板上，然後透過許多變因改進製程與元件設計，包含溫度、厚度及側壁保護等，已明顯有發光效率提升，注入電流也更加有效率的元件優化性能。元件發光經過基板共振腔後，發光光譜朝向多波段光譜、發光強度增強等效能提升邁進，使得色心自發光二極體未來發展更有前景。

This thesis discusses the use of material deposition methods composed of the radio frequency (RF) sputtering system and atomic layer deposition system (PE-ALD) with the measurement system to characterize the gallium oxynitride of color-center light-emitting diodes. The device processes contain the following steps: substrate heating at Tg= 500℃ for sputtering the gallium oxynitride on the polysilicon substrate, the indium tin oxide (ITO) current spreading layer, the use of rapid thermal annealing (RTA), and passivation to reduce side wall leakage was fabricated.

The contents of this thesis are divided into four parts. The first part introduces the principle of color center self-luminous diodes and Fabry-Perot resonant cavity. The second part introduces the process equipment, including RF sputter, atomic layer deposition system, measurement system and grinding machine. The third part is the process design and the complete fabrication steps. The fourth part is the electrical and spectrum analysis that help to optimize the device design.

Different from GaN pumped phosphors or quantum dot LEDs, we fabricate gallium oxynitride color-center self-luminous diodes to generate broad yellow-orange light band (550~700nm). The device is grown on a p-poly Si substrate, and the device performance can be improved through many factors, including temperature, thickness and passivation etc. The device electro-spectrum exhibit single or multi-band spectrum, reflecting the optical resonace effect with the cavity thickness in the vertical direction, which The latter makes the future development of color center self-luminous diodes more promising.