以原子層沉積GaON於多晶矽基板之發光二極體特性研究

Abstract

本論文主要探討利用原子層沉積系統(ALD)，在多晶矽基板上製作氮氧化鎵色心發光二極體元件，利用調整ALD氧氣/氨氣流量比、混和射頻濺鍍系統(RF-Sputter)沉積複合式氮氧化鎵色心源、氧化銦錫(ITO)披覆層厚度調整共振腔結構及ALD鈍化層披覆等優化元件實驗，透過電流-電壓及光譜的量測，製作能調整發光波段且發光效率高的色心自發光二極體。 內容分為五部份，第一部分介紹色心光源輻射機制與Fabry-Perot共振腔原理；第二部分介紹沉積薄膜機台，原子層沉積系統與射頻濺鍍系統原理；第三部分為元件結構介紹與分析ITO披覆層材料電性及穿透率，第四部份為元件電性量測與驗證，第五部份為針對色心自發光二極體元件進行優化與分析。 不同於傳統GaN藍光發光二極體激發螢光粉，或Micro LED藉由紅綠藍三色晶粒組成，產生寬頻譜波段的全彩光源，吾人製作出直接生長於矽基板與多晶矽玻璃基板的氮氧化鎵色心自發光二極體，經基板與元件結構共振後，使其發光光譜半高寬縮窄與發光強度增強，波段約落在綠光(550nm)位置。藉由調整披覆層ITO厚度，對於共振出光源的波長調整，元件達到全彩的發光波段，再經由一系列元件優化的調整，製作出高發光效率的氮氧化鎵自發光二極體，應用於未來頭戴AR/VR小尺寸顯示器將有更進一步發展。

This thesis discusses the fabrication and characterization of Gallium oxynitride(GaON)/polysilicon color-center light-emitting diode prepared by using a plasma-enhanced atomic layer deposition (PE-ALD) system. To improve the carrier-injection efficiency and reduce the leakage current, we adjust the O2:NH3 ratio, and combinatory use of ALD/RF sputter for material deposition. We further introduce indium tin oxide (ITO) current spreading resonance properties and hafnium oxide (HfO2) side-wall passivation layers. Through the measurement of current-voltage and spectrum, we can manufacture the GaON color-center self-luminous devices exhibit diode characteristics and exhibit broad emission spectra from 450 to 700nm The contents of this thesis are divided into five parts. The first part introduces the principle of color-center self-luminous diodes and Fabry-Perot resonant cavity; The second part introduces the deposition equipment, including the principle of ALD and RF sputtering system. The third part describes the fabrication and characterization of gallium oxynitride/polysilicon light-emitting diode and ITO electrical properties and transmittance experiments. The fourth part is the electrical measurement and verification of components. The fifth part is to optimize and analyze the color center self-luminous diode components. Different from traditional GaN blue light-emitting diodes to excite phosphors or Micro LED is composed of red, green and blue three-color crystals to produce a full-color light source with a wide spectrum band. We fabricated gallium oxynitride color center self-emitting diodes grown directly on silicon substrates and polysilicon substrates. After the resonance between the substrate and the element structure, the full width at half maximum of the luminous spectrum is narrowed and the luminous intensity is enhanced. The gallium oxynitride light-emitting diodes emit yellow-green peak(550nm) wavelength. By adjusting the thickness of the ITO coating layer, the wavelength of the resonant light source can be adjusted, and the component can achieve a full-color light-emitting band. Through a series of optimization and adjustment of components, a gallium oxynitride self-luminous diode is produced, which will be further developed in the small-sized display of AR/VR head-mounted in the future.