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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/86977完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 莊東漢 | zh_TW |
| dc.contributor.advisor | Tung-Han Chuang | en |
| dc.contributor.author | 邱冠諭 | zh_TW |
| dc.contributor.author | Kuan-Yu Chiu | en |
| dc.date.accessioned | 2023-05-02T17:11:48Z | - |
| dc.date.available | 2023-11-09 | - |
| dc.date.copyright | 2023-05-02 | - |
| dc.date.issued | 2023 | - |
| dc.date.submitted | 2023-01-08 | - |
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/86977 | - |
| dc.description.abstract | 在功率元件與模組晶片與產品尺寸持續縮小化，卻同時需要具備高效能、低功耗的趨勢下，先進封裝技術的研究成為最有潛力的研究領域，然而先進封裝技術的發展受限於接合介面的介金屬化合物成長、熱影響、可靠度、電性等...相關的問題，使得在近年來BGBM(Backside Grinding & Backside Metallization)製程晶片與固液擴散接合 (SLID)引起了學術界與產業界的極大興趣，主要是因為在接合領域可以達到「低溫接合，高溫應用」的效果，能夠作為一種可靠的接合方法。
本研究在真空環境中通過 SLID 技術將以130℃蒸鍍優化的 BGBM wafer (Si/Ti/Ni/Ag/Sn，厚度分別為1, 3, 5, 14 KÅ)於DBC基板(Au/Pd/Ni/Cu/Al2O3，厚度分別為1, 0.75, 45, 750 KÅ)上接合，通過 SEM/EDX 觀察接合界面處的擴散現象，接合系統實現了具有超過 7.91 MPa 優異的平均接合強度且定義明確的層狀結合結構，觀察到Ag3Sn、Ni3Sn4和Ni3Sn2的介金屬化合物在 Si/Ti/Ni/Ag/Sn 晶片和 DBC 基板的接合界面之間，證明了SLID 接合系統是一項非常有利被應用於低溫接合中的材料，這項創新的接合技術在功率元件與模組、IGBT、微機電產業(MEMS)、光電產業、傳感器、對熱敏感之元件、3D IC以及各個領域的互聯應用顯示出巨大的潛力。 由於更低溫度的接合與實現更高的可靠度有利於技術的發展與提升產業利用性，因此將擴散焊接溫度進一步降低到 250°C，這將有利於更低的製程溫度與更低元件耐熱需求，有降低成本的優勢，完成接合的樣品投入嚴謹的可靠度驗證(高溫貯存試驗 High Temperature Storage Test 125°C、高溫水蒸汽壓力試驗Pressure Cook Test 121°C/100%R.H./2atm、溫度循環試驗Temperature Cycling Test -55°C - 125°C 溫變率大於20℃/min以上)後，藉以研究對接合處微結構演變的影響，通過 SEM/EDX 觀察分析接合界面處的介金屬化合物變化狀況，驗證了接合的可靠性。 此外本研究透過BGBM Si/Ti/Ni/Sn 與BGBM Si/Ti/Ni/Ag/Sn金屬化矽晶片與Ni/Pd/Au表面處理的DBC氧化鋁基板通過固液擴散接合，驗證在接合中間層加入Ag層所形成的Ag3Sn介金屬化合物夾層，可以有效防止接合介面處出現的孔洞和縫隙，在 Si/Ti/Ni/Ag/Sn 晶片和 DBC 襯底之間的接合界面上確定的介金屬化合物的相為Ag3Sn、Ni3Sn4 和 Ni3Sn2，推力測試的平均接合強度約為 19.75 MPa，最大接合強度達到 35.24 MPa。 考慮降低材料成本的可能性，採用BGBM Si/Ti/Ni/Cu/Sn 與Si/Ti/Ni/Cu/Ag/Sn DBC金屬化矽晶片與Ni/Pd/Au表面處理的DBC氧化鋁基板通過固液擴散接合進行探討。 本研究也加入了奈米銀燒接合技術試驗做相關系列的接合研究與探討，期望在學術界與產業界的能夠有進一步的貢獻。 | zh_TW |
| dc.description.abstract | Under the trend that the size of power components and module chips and products continues to shrink, but at the same time need to have high performance and low power consumption, the research of advanced packaging technology has become the most potential research field, but the development of advanced packaging technology is limited Problems related to the growth of intermetallic compounds at the bonding interface, thermal influence, reliability, electrical properties, etc. have made BGBM (Backside Grinding & Backside Metallization) process wafers and solid-liquid diffusion bonding (SLID) aroused academic circles in recent years. The great interest in the industry is mainly because the effect of "low-temperature bonding, high-temperature application" can be achieved in the field of bonding, and it can be used as a reliable bonding method.
In this study, optimized BGBM wafers (Si/Ti/Ni/Ag/Sn, with thicknesses of 1, 3, 5, and 14 KÅ) were deposited on DBC substrates (Au/Pd/ Ni/Cu/Al2O3 with thicknesses of 1, 0.75, 45, 750 KÅ) were bonded, and the diffusion phenomenon at the bonding interface was observed by SEM/EDX. The bonding system achieved an excellent average bonding strength of more than 7.91 MPa and a well-defined The layered bonding structure, intermetallic compounds of Ag3Sn, Ni3Sn4 and Ni3Sn2 were observed between the bonding interface of Si/Ti/Ni/Ag/Sn wafer and DBC substrate, proving that the SLID bonding system is a very favorable method to be applied at low-temperature Materials in bonding, this innovative bonding technology has shown great promise in power components and modules, IGBTs, MEMS, optoelectronics, sensors, heat-sensitive components, 3D ICs, and interconnection applications in potential various fields. Since lower temperature bonding and higher reliability are conducive to the development of technology and the improvement of industrial applicability, the diffusion soldering temperature is further reduced to 250°C, which will benefit lower process temperature and lower heat resistance of components demand, has the advantage of reducing costs, and the completed joint samples are put into rigorous reliability verification (high-temperature storage test 125°C, high-temperature water vapor pressure test Pressure Cook Test 121°C/100%R.H./2atm, temperature cycle After testing the Temperature Cycling Test -55°C - 125°C (temperature change rate greater than 20°C/min), it is used to study the influence on the microstructure evolution of the joint, and the change of the intermetallic compound at the joint interface is observed and analyzed by SEM/EDX, the reliability of the bonding was verified. In addition, this study uses solid-liquid diffusion bonding of BGBM Si/Ti/Ni/Sn and BGBM Si/Ti/Ni/Ag/Sn metalized silicon wafers and Ni/Pd/Au surface-treated DBC alumina substrates to verify that in the middle of bonding The Ag3Sn intermetallic compound interlayer formed by adding the Ag layer can effectively prevent holes and gaps at the joint interface, and the intermetallic determined on the joint interface between the Si/Ti/Ni/Ag/Sn wafer and the DBC substrate The phases of the compound are Ag3Sn, Ni3Sn4, and Ni3Sn2, the average joint strength of the thrust test is about 19.75 MPa, and the maximum joint strength reaches 35.24 MPa. Considering the possibility of reducing the cost of materials, BGBM Si/Ti/Ni/Cu/Sn and Si/Ti/Ni/Cu/Ag/Sn DBC metalized silicon wafers and DBC alumina substrates with Ni/Pd/Au surface treatment were adopted Solid-liquid diffusion bonding. This study also joined the nano-silver firing bonding technology experiment to do a series of bonding research and discussion, hoping to make further contributions in academia and industry. | en |
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| dc.description.provenance | Made available in DSpace on 2023-05-02T17:11:48Z (GMT). No. of bitstreams: 0 | en |
| dc.description.tableofcontents | 目錄 VI
圖目錄 IX 表目錄 XIV 第一章 前言 1 1.1 研究背景 1 1.1.1 電子構裝重要性 1 1.1.2 功率半導體的發展 3 1.1.3 功率元件IGBT的介紹 7 1.2 研究動機與目的 13 第二章 理論基礎與文獻回顧 15 2.1 絕緣柵雙極晶體管(Insulated gate bipolar transistor, IGBT) 的發展[4] 15 2.1.1 功率半導體IGBT的應用 15 2.1.2 功率半導體IGBT的演進 16 2.2 先進封裝BGBM(Backside Grinding & Backside Metallization)介紹 24 2.3 半導體接合技術的發展 26 2.4 固液擴散接合(Solid liquid Interdiffusion Bonding) 27 2.5 介金屬化合物(Intermetallic Compound)介紹 30 2.5.1 Ag-Sn SLID接合 30 2.5.2 Ni-Sn SLID接合 31 2.5.3 Cu-Sn SLID接合 33 2.6 奈米金屬顆粒焊膏低溫燒結連接介紹[59] 35 2.6.1 奈米金屬顆粒焊膏燒結連接機理 36 2.6.2 奈米金屬燒結焊膏顆粒尺寸 37 2.6.3 奈米金屬燒結焊膏燒結過程 38 第三章 實驗方法 40 3.1 實驗流程 40 3.1.1 總體實驗流程圖 40 3.1.2 實驗製程示意圖 41 3.2 材料種類及其預處理 42 3.2.1 基板 42 3.2.2 基板清潔 42 3.2.3 鍍膜靶材 43 3.2.4 BGBM晶片 43 3.2.5 奈米燒結銀膏 44 3.3 濺鍍設備與鍍膜製程 44 3.3.1 四腔磁控式濺鍍系統 44 3.3.2 鍍膜製程 45 3.4真空熱壓設備 46 3.5 時效試驗設備 47 3.6 研磨 48 3.7 材料性質分析設備 49 3.7.1 掃描式電子顯微鏡(Scanning Electron Microscope,SEM) 49 3.7.2 能量色散光譜儀(EDX) 50 3.7.3 接合強度測試(Dage 4000 die shear test) 53 3.8 可靠度試驗(Reliability experiment) 55 3.8.1 高溫貯存試驗(High temperature storage test, HTS) 55 3.8.2 溫度循環測試(Temperature cycling test, TCT) 56 3.8.3 高溫水蒸汽壓力試驗 (Pressure Cook Test, PCT) 57 第四章 結果與討論 58 4.1 SLID接合Si/Ti/Ni/Ag/Sn晶片與DBC Cu/Ni/Pd/Au的反應機制 58 4.1.1 接合介面的介金屬化合物(IMC)分析 58 4.1.2 接合介面的接合強度分析 59 4.2 SLID接合Si/Ti/Ni/Ag/Sn晶片與DBC/Cu/Ni/Pd/Au的時效試驗 60 4.2.1 時效試驗後接合介面的接合強度分析與IMC分析 60 4.3 提高Si/Ti/Ni/Ag/Sn與DBC/Cu/Ni/Pd/Au SLID接合溫度試驗 63 4.3.1 提高接合溫度後接合介面的介金屬化合物(IMC)分析 63 4.3.2 提高接合溫度後接合介面的接合強度分析 65 4.4 提高Ti/Ni/Ag/Sn與DBC SLID接合溫度試驗的時效試驗 66 4.4.1 提高接合溫度的400℃/500小時時效試驗後接合強度分析 66 4.4.2 提高接合溫度的400℃/500小時時效試驗後介金屬化合物(IMC)分析 67 4.4.3 提高接合溫度的400℃/1000小時時效試驗後接合強度分析 69 4.4.4 提高接合溫度的400℃/1000小時時效試驗後介金屬化合物(IMC)分析 70 4.5 Ti/Ni/Ag/Sn與DBC SLID接合的可靠度試驗 72 4.5.1 高溫貯存試驗(High temperature storage test, HTS) 72 4.5.2 溫度循環測試(Temperature cycling test, TCT) 74 4.5.3 高溫水蒸汽壓力試驗 (Pressure Cook Test, PCT) 77 4.6 Ti/Ni/Sn與DBC、Ti/Ni/Ag/Sn與DBC SLID接合試驗 79 4.6.1 接合介面的接合強度分析 79 4.6.2 接合介面的介金屬化合物(IMC)分析 81 4.7 Ti/Ni/Cu/Sn與DBC、Ti/Ni/Cu/Ag/Sn與DBC SLID接合試驗 86 4.7.1 接合介面的接合強度分析 86 4.7.2 接合介面的介金屬化合物(IMC)分析 89 4.8 奈米銀燒結的固晶研究實驗 93 4.8.1 接合時間固定60mins、無壓，接合溫度分別250℃、300℃、350℃試驗 94 4.8.2 接合溫度與時間採取Gradient Profile方式、無壓與有施加接合壓力試驗 95 4.8.3 接合溫度與時間採取Gradient Profile方式，不同接合壓力0~40MPa試驗 97 4.8.4 燒結接合的時間增加對接合強度影響的試驗 98 4.8.5 試驗加入厚度30KÅ的Sn鍍層，Si/Ti/Ni/Ag/Sn整體厚度1、3、5、30KÅ，接合條件Gradient Profile方式，無施加壓力 99 4.8.6 DBC基板表面鍍層對奈米銀燒結強度的影響 100 4.8.7 試驗於奈米銀膏當中添加10%錫膏作為複合接合材料 101 4.9 研究結果小結 103 第五章 結論 108 參考文獻 110 個人簡介 116 | - |
| dc.language.iso | zh_TW | - |
| dc.subject | SLID接合 | zh_TW |
| dc.subject | BGBM | zh_TW |
| dc.subject | 可靠度驗證 | zh_TW |
| dc.subject | 界面反應 | zh_TW |
| dc.subject | 奈米銀燒結 | zh_TW |
| dc.subject | Si/Ti/Ni/Ag/Sn | zh_TW |
| dc.subject | 介金屬化合物 | zh_TW |
| dc.subject | nano silver sintering | en |
| dc.subject | BGBM | en |
| dc.subject | SLID bonding | en |
| dc.subject | Si/Ti/Ni/Ag/Sn | en |
| dc.subject | interfacial reaction | en |
| dc.subject | intermetallic compound | en |
| dc.subject | reliability verification | en |
| dc.title | 背晶金屬化矽晶片與DBC陶瓷基板固晶接合研究 | zh_TW |
| dc.title | Study on Die Bonding of Backside Metallized Si Chip with DBC Ceramic Substrates | en |
| dc.type | Thesis | - |
| dc.date.schoolyear | 111-1 | - |
| dc.description.degree | 博士 | - |
| dc.contributor.oralexamcommittee | 施漢章;徐治平;吳子嘉;張世穎;曹龍泉;林修任;劉乃瑋;王彰盟 | zh_TW |
| dc.contributor.oralexamcommittee | Han-Chang Shih;Jyh-Ping Hsu;Tzu-Chia Wu;Shih-Ying Chang;Lung-Chuan Tsao;Hsiu-Jen Lin;Nai-Wei Liu;Chang-Meng Wang | en |
| dc.subject.keyword | BGBM,SLID接合,Si/Ti/Ni/Ag/Sn,界面反應,介金屬化合物,可靠度驗證,奈米銀燒結, | zh_TW |
| dc.subject.keyword | BGBM,SLID bonding,Si/Ti/Ni/Ag/Sn,interfacial reaction,intermetallic compound,reliability verification,nano silver sintering, | en |
| dc.relation.page | 121 | - |
| dc.identifier.doi | 10.6342/NTU202210181 | - |
| dc.rights.note | 同意授權(全球公開) | - |
| dc.date.accepted | 2023-01-10 | - |
| dc.contributor.author-college | 工學院 | - |
| dc.contributor.author-dept | 材料科學與工程學系 | - |
| 顯示於系所單位： | 材料科學與工程學系 | |
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| ntu-111-1.pdf | 5.99 MB | Adobe PDF | 檢視/開啟 |
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