常壓介電質放電噴射電漿表面改質BCP緩衝層應用於p-i-n倒置鈣鈦礦太陽能電池

Abstract

Bathocuproine (BCP)常用作PC61BM和銀電極之間的p-i-n倒置結構鈣鈦礦太陽能電池中的電洞阻擋層。在蒸鍍銀電極之前，我們使用低溫(<40°C)大氣壓介質阻擋放電射流(DBDjet)以不同的掃描速率處理BCP薄膜。這樣做的主要目的是通過使用DBDjet進行表面改質來改變BCP薄膜和銀電極之間的接觸電阻。在2 cm/s的 DBDjet掃描速率下實現了13.11%的最佳功率轉換效率。在氦氣介電質放電噴射電漿處理下，活性氮於BCP薄膜形成C–N鍵結並在BCP薄膜上產生凹坑。這惡化了BCP薄膜與銀電極之間的界面。與未在BCP薄膜上進行電漿處理之元件相比，於BCP薄膜上進行氦氣介電質放電噴射電漿處理可減小光電流遲滯現象，但降低太陽能電池之填充因子和光電轉換效率。

A Bathocuproine (BCP) layer is common hole-blocking layer in p-i-n structure perovskite solar cells (PSCs). In this paper, BCP layer was set between the electron transport layer (PC61BM) and top electrodes (Ag) and treated by a low-temperature (<40 ◦C) atmospheric-pressure dielectric barrier discharge jet (DBDjet) with different scan rates (3, 2, 1 and 0.5 cm/s). Through surface modification using a He DBDjet, the p-i-n structure PSCs achieved the best power conversion efficiency (PCE) of 13.11% at a DBDjet scan rate of 2 cm/s. In SEM and XPS results, we find the formation of C-N bonds and pits on the BCP layer through the He DBDjet treatment, causing the deterioration of the interface between the BCP and the follow-up deposited-Ag top electrode. Although the photocurrent hysteresis decreased in comparison with the device without the plasma treatment on the BCP layer, the fill factor and the efficiency of the PSCs degraded.