請用此 Handle URI 來引用此文件：
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/86075完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 陳奕君(I-Chun Cheng) | |
| dc.contributor.author | Chun-Wei Chang | en |
| dc.contributor.author | 張鈞維 | zh_TW |
| dc.date.accessioned | 2023-03-19T23:35:40Z | - |
| dc.date.copyright | 2022-10-14 | |
| dc.date.issued | 2022 | |
| dc.date.submitted | 2022-09-28 | |
| dc.identifier.citation | [1] S. Sakai, and R. Ilangovan, “Metal-ferroelectric-insulator-semiconductor memory FET with long retention and high endurance,” IEEE Electron Device Lett., vol. 25, no. 6, pp. 369-371, Jun. 2004, doi: 0.1109/LED.2004.828992. [2] S. Sakai and M. Takahashi, “Recent progress of ferroelectric-gate field-effect transistors and applications to nonvolatile logic and FeNAND flash memory,” Materials, vol. 3, no. 11, pp. 4950-4964, Oct. 2010, doi: 10.3390/ma3114950. [3] D. Kim, Y. R. Jeon, B. Ku, C. Chung, T. H. Kim, S. Yang, U. Won, T. Jeong, and C. Choi, “Analog Synaptic Transistor with Al-Doped HfO2 Ferroelectric Thin Film,” ACS Appl. Mater. Interfaces, vol. 13, no. 44, pp. 52743-52753, Nov. 2021, doi: 10.1021/acsami.1c12735. [4] C. Sun et al., “First Demonstration of BEOL-Compatible Ferroelectric TCAM Featuring a-IGZO Fe-TFTs with Large Memory Window of 2.9 V, Scaled Channel Length of 40 nm, and High Endurance of 108 Cycles,” IEEE in 2021 Symposium on VLSI Technology, Aug. 2021, pp. 1-2. [5] A. P. P. Correia, P. Barquinha, and J. C. da Palma Goes, “Thin-Film Transistors,” in A Second-Order Σ∆ ADC Using Sputtered IGZO TFTs.: Springer International Publishing, pp. 5-15, 2016. [6] L. Petti, N. Munzenrieder, C. Vogt, H, Faber, L. Buthe, G. Cantarella, F. Bottacchi, Thomas D. Anthopoulos, and Gerhard Troste, “Metal oxide semiconductor thin-film transistors for flexible electronics,” Appl. Phys. Rev., vol. 3, no. 2, p. 021303, Jun. 2016, doi: 10.1063/1.4953034. [7] W. Xu, H. Li, J.-B. Xu, and L. Wang, “Recent advances of solution-processed metal oxide thin-film transistors,” ACS Appl. Mater. Interfaces, vol. 10, no. 31, pp. 25878-25901, May 2018, doi: 10.3390/nano10050965. [8] E. Fortunato, P. Barquinha, and R. Martins, “Oxide semiconductor thin‐film transistors: a review of recent advances,” Adv. Mater., vol. 24, no. 22, pp. 2945-2986, Jun. 2012, doi: 10.1002/adma.201103228. [9] C. G. Van de Walle, “Hydrogen as a cause of doping in zinc oxide,” Phys. Rev. Lett., vol. 85, no. 5, p. 1012, Jul. 2000, doi: 10.1103/PhysRevLett.85.1012. [10] K. S. Son, T. S. Kim, J. S. Jung, M. K. Ryu, K. B. Park, B. W. Yoo, J. W. Kim, Y. G. Lee, J. Y. Kwon, S. Y. Lee, and J. M. Kim, “42.4 L: Late‐News Paper: 4 inch QVGA AMOLED Driven by the Threshold Voltage Controlled Amorphous GIZO (Ga2O3‐In2O3‐ZnO) TFT,” in SID Symposium Digest of Technical Papers, Jul. 2008, vol. 39, no. 1: Wiley Online Library, pp. 633-636, doi: 10.1889/1.3069743. [11] J. Park, S. Kim, C. Kim, S. Kim, I. Song, H. Yin, K. K. Kim, S. Lee, K. Hong, J. Lee, J. Jung, E. Lee, K. W. Kwon, and Y. Park, “High-performance amorphous gallium indium zinc oxide thin-film transistors through N2O plasma passivation,” Appl. Phys. Lett., vol. 93, no. 5, p. 053505, Aug. 2008, doi: 10.1063/1.2962985. [12] J. L, F. Zhou, H. P. Lin, W. Q. Zhu, J. H. Zhang, X. Y. Jiang, and Z. L. Zhang, “Effect of reactive sputtered SiOx passivation layer on the stability of InGaZnO thin film transistors,” Vacuum, vol. 86, no. 12, pp. 1840-1843, Jul. 2012, doi: 10.1016/j.vacuum.2012.04.009. [13] D. Lehninger, M. Ellinger, T. Ali, S. Li, K. Mertens, M. Lederer, R. Olivio, T. Kämpfe, N. Hanisch, K. Biedermann, M. Rudolph, V. Brackmann, S. Sanctis, Michael P. M. Jank, and K. Seidel, “A fully integrated ferroelectric thin-film-transistor-influence of device scaling on threshold voltage compensation in displays,” Adv. Electron. Mater., vol. 7, no. 6, p. 2100082, Jun. 2021, doi: 0.1002/aelm.202100082. [14] T. Böscke, J. Müller, D. Bräuhaus, U. Schröder, and U. Böttger, “Ferroelectricity in hafnium oxide thin films,” Appl. Phys. Lett., vol. 99, no. 10, p. 102903, Sep. 2011, doi: 10.1063/1.3634052. [15] M. H. Park, Y. H. Lee, T. Mikolajick, U. Schroeder, and C. S. Hwang, “Thermodynamic and kinetic origins of ferroelectricity in fluorite structure oxides,” Adv. Electron. Mater., vol. 5, no. 3, p. 1800522, Mar. 2019, doi: 10.1002/aelm.201800522. [16] Y. Lee, Y. Goh, J. Hwang, D. Das, and S. Jeon, “The influence of top and bottom metal electrodes on ferroelectricity of hafnia,” IEEE Trans. Electron Devices, vol. 68, no. 2, pp. 523-528, Feb. 2021, doi: 10.1109/TED.2020.3046173. [17] P. Hidnert and W. Sweeney, Thermal expansion of tungsten (no. 515). US Government Printing Office, 1925. [18] P. Hidnert and W. Gero, Thermal expansion of molybdenum (no. 488). US Government Printing Office, 1924. [19] H. O. Pierson, Handbook of refractory carbides & nitrides: properties, characteristics, processing and applications. William Andrew, 1996. [20] J. W. Hwang, “Thermal expansion of nickel and iron, and the influence of nitrogen on the lattice parameter of iron at the Curie temperature,” University of Missouri--Rolla, 1972. [21] T. Shiraishi, K. Katayama, T. Yokouchi, T. Shimizu, T. Oikawa, O. Sakata, H. Uchida, Y. Imai, T. Kiguchi, Toyohiko J. Konno, and H. Funakubo, “Impact of mechanical stress on ferroelectricity in (Hf0.5Zr0.5)O2 thin films,” Appl. Phys. Lett., vol. 108, no. 26, p. 262904, Jun. 2016, doi: 10.1063/1.4954942. [22] S. J. Kim, D. Narayan, J. G. Lee, J. Mohan, Joy S. Lee, J. Lee, Harrison S. Kim, Y. C. Byun, Antonio T. Lucero, Chadwin D. Young, Scott R. Summerfelt, T. San, L. Colombo, and J. Kim, “Large ferroelectric polarization of TiN/Hf0.5Zr0. 5O2/TiN capacitors due to stress-induced crystallization at low thermal budget,” Appl. Phys. Lett., vol. 111, no. 24, p. 242901, Dec. 2017, doi: 10.1063/1.4995619. [23] M. H. Park, H. J. Kim, Y. J. Kim, T. Moon, and C. S. Hwang, “The effects of crystallographic orientation and strain of thin Hf0. 5Zr0. 5O2 film on its ferroelectricity,” Appl. Phys. Lett., vol. 104, no. 7, p. 072901, Feb. 2014 2014, doi: 10.1063/1.4866008. [24] H. J. Kim, M. H. Park , Y. J. Kim , Y. H. Lee , T. Moon , K. D. Kim , S. D. Hyun, and C. S. Hwang, “A study on the wake-up effect of ferroelectric Hf0.5Zr 0.5O2 films by pulse-switching measurement,” Nanoscale, vol. 8, no. 3, pp. 1383-1389, 2016, doi: 10.1039/c5nr05339k. [25] T. Kim and S. Jeon, “Pulse switching study on the HfZrO ferroelectric films with high pressure annealing,” IEEE Trans. Electron Devices, vol. 65, no. 5, pp. 1771-1773, May 2018, doi: 10.1109/TED.2018.2816968. [26] M. Fitsilis, “Scaling of the ferroelectric field effect transistor and programming concepts for non-volatile memory applications,” Bibliothek der RWTH Aachen, 2005. [27] K. Ni, P. Sharma, J. Zhang, M. Jerry, Jeffery A. Smith, K. Tapily, R. Clark, S. Mahapatra, and S. Datta, “Critical role of interlayer in Hf0.5Zr0.5O2 ferroelectric FET nonvolatile memory performance,” IEEE Trans. Electron Devices, vol. 65, no. 6, pp. 2461-2469, Jun. 2018, doi: 10.1109/TED.2018.2829122. [28] Y. Li, R. Liang, J. Wang, Y. Zhang, H. Tian, H. Liu, S. Li, W. Mao, Y. Pang, Y. Li, Y. Tang, and T. L. Ren, “A ferroelectric thin film transistor based on annealing-free HfZrO film,” IEEE J. Electron Devices Soc., vol. 5, no. 5, pp. 378-383, Sep. 2017, doi: 10.1109/JEDS.2017.2732166. [29] W. Xia, C. Liu, Y. Peng, S. Zheng, Q. Feng, C. Zhang, J. Zhang, Y. Hao, M. Liao, and Y. Zhou, “Performance improvement of Hf0.5Zr0.5O2-based ferroelectric-field-effect transistors with ZrO2 seed layers,” IEEE Electron Device Lett., vol. 40, no. 5, pp. 714-717, May 2019, doi: 10.1109/LED.2019.2903641. [30] T. Ali, P. Polakowski , K. Kühnel, M. Czernohorsky, T. Kämpfe, M. Rudolph, B. Pätzold1, D. Lehninger, F. Müller, R. Olivo, M. Lederer, R. Hoffmann, P. Steinke, K. Zimmermann, U. Mühle, K. Seidel, and J. Müller, “A multilevel FeFET memory device based on laminated HSO and HZO ferroelectric layers for high-density storage,” in 2019 IEEE Int. Electron Devices Meet., Dec. 2019: IEEE, pp. 28.7.1-28.7.4, doi: 10.1109/IEDM19573.2019.8993642. [31] H. Mulaosmanovic, E. T. Breyer, T. Mikolajick, and S. Slesazeck, “Ferroelectric FETs with 20-nm-thick HfO2 layer for large memory window and high performance,” IEEE Trans. Electron Devices, vol. 66, no. 9, pp. 3828-3833, Sep. 2019, doi: 10.1109/TED.2019.2930749. [32] C. Y. Chan, K. Y. Chen, H. K. Peng, and Y. H. Wu, “FeFET memory featuring large memory window and robust endurance of long-pulse cycling by interface engineerlng using high-k AlON,” in 2020 IEEE Symposium on VLSI Technology, Dec. 2020: IEEE, pp. 1-2, doi: 10.1109/VLSITechnology18217.2020.9265103. [33] A. J. Tan, Y. H. Liao, L. C. Wang, N. Shanker, J. H. Bae, C. Hu, and S. Salahuddin, “Ferroelectric HfO2 memory transistors with high-κ interfacial layer and write endurance exceeding 1010 cycles,” IEEE Electron Device Lett., May. 2021, doi: 10.1109/LED.2021.3083219. [34] A. J. Tan, K. Chatterjee , J. Zhou , D. Kwon , Y. H. Liao , S. Cheema , C. Hu, and S. Salahuddin “Experimental demonstration of a ferroelectric HfO2-based content addressable memory cell,” IEEE Electron Device Lett., vol. 41, no. 2, pp. 240-243, Feb. 2019, doi: 10.1109/LED.2019.2963300. [35] H. K. Peng, T. H. Kao, Y. C. Kao, P. J. Wu, and Y. H. Wu, “Reduced asymmetric memory window between Si-based n-and p-FeFETs with scaled ferroelectric HfZrOₓ and AlON interfacial layer,” IEEE Electron Device Lett., vol. 42, no. 6, pp. 835-838, Jun. 2021, doi: 10.1109/LED.2021.3074434. [36] C. Sun, Z. Zheng, K. Han, S. Samanta, J. Zhou, Q. Kong, J. Zhang, H. Xu, A. Kumar, C. Wang, and X. Gong “Temperature-dependent operation of InGaZnO ferroelectric thin-film transistors with a metal-ferroelectric-metal-insulator-semiconductor structure,” IEEE Electron Device Lett., Oct. 2021, doi: 10.1109/LED.2021.3121677. [37] R. Zhao, X. Zhao, H. Liu, M. Shao , Q. Feng, T. Liu, T. Lu, X. Wu , Y. Yi, and T. L. Ren, “Reconfigurable logic-memory hybrid device based on ferroelectric Hf0.5Zr0.5O2,” IEEE Electron Device Lett., Aug. 2021, doi: 10.1109/LED.2021.3089326. [38] M. K. Kim, I. J. Kim, and J. S. Lee, “CMOS-compatible ferroelectric NAND flash memory for high-density, low-power, and high-speed three-dimensional memory,” Sci. Adv., vol. 7, no. 3, p. eabe1341, Jan. 2021, doi: 10.1126/sciadv.abe1341. [39] J. Wu, F. Mo, T. Saraya, T. Hiramoto, M. Ochi, Hi Goto, and M. Kobayashi, “Mobility-enhanced FET and wakeup-free ferroelectric capacitor enabled by Sn-doped InGaZnO for 3D embedded RAM application,” IEEE in 2021 Symposium on VLSI Technology, 2021, pp. 1-2. [40] K. Toprasertpong, K. Tahara, T. Fukui, Z. Lin, K. Watanabe, M. Takenaka, and and S. Takagi, “Improved ferroelectric/semiconductor interface properties in Hf0.5Zr0.5O2 ferroelectric FETs by low-temperature annealing,” IEEE Electron Device Lett., vol. 41, no. 10, pp. 1588-1591, Oct. 2020, doi: 10.1109/LED.2020.3019265. [41] E. Yurchuk, J. Müller, S. Müller, J. Paul, M. Pešic, R. Bentum, U. Schroeder, and T. Mikolajick, “Charge-trapping phenomena in HfO2-based FeFET-type nonvolatile memories,” IEEE Trans. on Electron Devices, vol. 63, no. 9, pp. 3501-3507, Sep. 2016, doi: 10.1109/TED.2016.2588439. [42] G. G. Lee, E. Tokumitsu, S. M. Yoon, Y. Fujisaki, J. W. Yoon, and H. Ishiwara, “The flexible non-volatile memory devices using oxide semiconductors and ferroelectric polymer poly (vinylidene fluoride-trifluoroethylene),” Appl. Phys. Lett., vol. 99, no. 1, p. 012901, Jul. 2011, doi: 10.1063/1.3608145. [43] L. Petti, N. Münzenrieder, G. A. Salvatore, C. Zysset, T. Kinkeldei, L. Büthe, and G. Tröster “Influence of mechanical bending on flexible InGaZnO-based ferroelectric memory TFTs,” IEEE Trans. on Electron Devices, vol. 61, no. 4, pp. 1085-1092, Apr. 2014, doi: 10.1109/TED.2014.2304307. [44] H. Ohigashi, K. Koga, M. Suzuki, T. Nakanishi, K. Kimura, and N. Hashimoto, “Piezoelectric and ferroelectric properties of P(VDF-TrFE) copolymers and their application to ultrasonic transducers,” Ferroelectrics, vol. 60, no. 1, pp. 263-276, 1984. [45] K. Omote, H. Ohigashi, and K. Koga, “Temperature dependence of elastic, dielectric, and piezoelectric properties of “single crystalline’’films of vinylidene fluoride trifluoroethylene copolymer,” J. Appl. Phys., vol. 81, no. 6, pp. 2760-2769, 1997. [46] N. Münzenrieder, L. Petti, C. Zysset, D. Görk, L. Büthe, G. A. Salvatore, and G. Tröster, “Investigation of gate material ductility enables flexible a-IGZO TFTs bendable to a radius of 1.7 mm,” in 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC), May 2013: IEEE, pp. 362-365, doi: 10.1109/ESSDERC.2013.6818893. [47] D. Kim, , B.U. Hwang, J.S. Park, H.S. Jeon, B.S. Bae, H.J. Lee , and N. E. Lee, “Mechanical bending of flexible complementary inverters based on organic and oxide thin film transistors,” Org. Electronic., vol. 13, no. 11, pp. 2401-2405, Nov. 2012, doi: 10.1016/j.orgel.2012.06.038. [48] K. H. Lee, G. Lee, K. Lee, M. S. Oh, S. Im, and S. M. Yoon, “High‐mobility nonvolatile memory thin‐film transistors with a ferroelectric polymer interfacing ZnO and pentacene channels,” Adv. Mater., vol. 21, no. 42, pp. 4287-4291, Nov. 2009, doi: 10.1002/adma.200900398. [49] S. M. Yoon, S. Yang, and S. H. K. Park, “Flexible nonvolatile memory thin-film transistor using ferroelectric copolymer gate insulator and oxide semiconducting channel,” J. Electrochem. Soc., vol. 158, no. 9, pp. H892-H896, 2011, doi: 10.1149/1.3609842. [50] A. van Breeme, B. Kam, B. Cobb, F. G. Rodriguez, G. van Heck, K. Myny, A. Marrani, V. Vinciguerra, and G. Gelinck, “Ferroelectric transistor memory arrays on flexible foils,” Org. Electronic., vol. 14, no. 8, pp. 1966-1971, Aug. 2013, doi: 10.1016/j.orgel.2013.04.025. [51] J. A. Caraveo-Frescas, M. Khan, and H. N. Alshareef, “Polymer ferroelectric field-effect memory device with SnO channel layer exhibits record hole mobility,” Sci. Rep., vol. 4, no. 1, p. 5243, Jun. 2014, doi: 10.1038/srep05243. [52] S. W. Jung, J. B. Koo, C. W. Park, B. S. Na, J. Y. Oh, and S. S. Lee, “Flexible nonvolatile memory transistors using indium gallium zinc oxide-channel and ferroelectric polymer poly (vinylidene fluoride-co-trifluoroethylene) fabricated on elastomer substrate,” J. Vac. Sci. & Technolo. B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, vol. 33, no. 5, p. 051201, Sep. 2015, doi: 10.1116/1.4927367. [53] C. Ren, G. Zhong, Q. Xiao, C. Tan, M. Feng, X. Zhong, F. An, J. Wang, M. Zi, M. Tang, Y. Tang, T. Jia, and J. Li, “Highly Robust Flexible Ferroelectric Field Effect Transistors Operable at High Temperature with Low‐Power Consumption,” Adv. Funct. Mater., vol. 30, no. 1, pp. 1906131, Jan. 2020, doi: 10.1002/adfm.201906131. [54] Y. Chen, Y. Yang, P. Yuan, P. Jiang, Y. Wang, Y. Xu, S. Lv, Y. Ding, Z. Dang, Z. Gao, T. Gong, Y. Wang, and Q. Luo, “Flexible Hf0.5Zr0.5O2 ferroelectric thin films on polyimide with improved ferroelectricity and high flexibility,” Nano Res., vol. 15, no. 4, pp. 2913-2918, Apr 2022, doi: 10.1007/s12274-021-3896-8. [55] H. Liu, T. Lu, Y. Li, Z. Ju, R. Zhao, J. Li, M. Shao, H. Zhang, R. Liang, X. R. Wang, R. Guo, J. Chen, Y. Yang, and T. L. Ren, “Flexible quasi‐van der waals ferroelectric hafnium‐based oxide for integrated high‐performance nonvolatile memory,” Adv. Sci., vol. 7, no. 19, p. 2001266, Oct. 2020, doi: 10.1002/advs.202001266. [56] W. Xiao, C. Liu, Y. Peng, S. Zheng, Q. Feng, C. Zhang, J. Zhang, Y. Hao, M. Liao, and Y. Zhou, “Memory window and endurance improvement of Hf0.5Zr0.5O2-based FeFETs with ZrO2 seed layers characterized by fast voltage pulse measurements,” Nanoscale Res. Lett., vol. 14, no. 1, pp. 1-7, Jul. 2019, doi: 10.1186/s11671-019-3063-2. [57] K. Tsuchiya, T. Kitagawa, and E. Nakamachi, “Development of RF magnetron sputtering method to fabricate PZT thin film actuator,” Precis Eng., vol. 27, no. 3, pp. 258-264, Jul. 2003, doi: 10.1016/S0141-6359(03)00006-0. [58] R. W. Johnson, A. Hultqvist, and S. F. Bent, “A brief review of atomic layer deposition: from fundamentals to applications,” Mater. today, vol. 17, no. 5, pp. 236-246, Jun. 2014, doi: 10.1016/j.mattod.2014.04.026. [59] M. Meyyappan, L. Delzeit, A. Cassell, and D. Hash, “Carbon nanotube growth by PECVD: a review,” Plasma Sources Sci. Technol., vol. 12, no. 2, p. 205, May 2003, doi: 10.1088/0963-0252/12/2/312. [60] M. Shearn, X. Sun, M. D. Henry, A. Yariv, and A. Scherer, Advanced plasma processing: etching, deposition, and wafer bonding techniques for semiconductor applications. InTech New York, 2010. [61] K. Chae, J. Hwang, E. Chagarov, A. Kummel, and K. Cho, “Stability of ferroelectric and antiferroelectric hafnium–zirconium oxide thin films,” J. Appl. Phys., vol. 128, no. 5, p. 054101, 2020, doi: 10.1063/5.0011547. [62] S. Y. Huang, “Analyzing the current crowding effect induced by oxygen adsorption of amorphous InGaZnO thin film transistor by capacitance–voltage measurements,” Solid-state Electron., vol. 69, pp. 11-13, Mar. 2012, doi: 10.1016/j.sse.2011.11.005. [63] C. Y. Liao, K. Y. Hsiang, F. C. Hsieh, S. H. Chiang, S. H. Chang, J. H. Liu, C. F. Lou, C. Y. Lin, T. C. Chen, and C. S. Chang, “Multibit ferroelectric FET based on nonidentical double HfZrO2 for high-density nonvolatile memory,” IEEE Electron Device Lett., vol. 42, no. 4, pp. 617-620, Apr. 2021, doi: 10.1109/LED.2021.3060589. [64] Y. S. Jiang , K. W. Huang, S. H. Yi, C. I. Wang, T. J. Chang, W. C. Kao, C. Y. Wang, Y. T. Yin, J. Shieh, and M. J. Chen, “Ferroelectric ZrO2 ultrathin films on silicon for metal-ferroelectric-semiconductor capacitors and transistors,” J. Eur. Ceram. Soc., Jul. 2022, doi: 10.1016/j.jeurceramsoc.2022.07.031. [65] H. Mulaosmanovic, J. Ocker, S. Müller, U. Schroeder, J. Müller, P. Polakowski, S. Flachowsky, R. van Bentum, T. Mikolajick, and S. Slesazeck, “Switching kinetics in nanoscale hafnium oxide based ferroelectric field-effect transistors,” ACS Appl. Mater. Interfaces, vol. 9, no. 4, pp. 3792-3798, Feb. 2017, doi: 10.1021/acsami.6b13866. [66] H. Mulaosmanovic, E. T. Breyer, S. Dünkel, S. Beyer, T. Mikolajick, and S. Slesazeck, “Ferroelectric field-effect transistors based on HfO2: a review,” Nanotechnol., Dec. 2021, doi: 10.1088/1361-6528/ac189f. [67] M. Jerry, P. Y. Chen, J. Zhang, P. Sharma, K. Ni, S. Yu, and S. Datta, “Ferroelectric FET analog synapse for acceleration of deep neural network training,” in 2017 IEEE Int. Electron Devices Meet., Jan. 2017: IEEE, pp. 6.2. 1-6.2. 4, doi: 10.1109/IEDM.2017.8268338. [68] T. Ali, K. Kühnel, R. Olivo, D. Lehninger, F. Müller, M. Lederer, M. Rudolph, S. Oehler, K. Mertens, R. Hoffmann, K. Zimmermann, P. Schramm, J. Metzger, R. Binder, M. Czernohorsky, T. Kämpfe, K. Seidel, J. Müller, J. V. Houdt, and L. M. Eng, “Impact of the ferroelectric stack lamination in Si doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based FeFETs: toward high-density multi-level cell and synaptic storage,” Electron. Mater., vol. 2, no. 3, pp. 344-369, Jul. 2021, doi: 10.3390/electronicmat2030024. [69] K. Ni, J. Smith, H. Ye, B. Grisafe, G. Bruce Rayner, A. Kummel, and S. Datta, “A novel ferroelectric superlattice based multi-level cell non-volatile memory,” in 2019 IEEE Int. Electron Devices Meet., Feb. 2019: IEEE, pp. 28.8. 1-28.8. 4, doi: 10.1109/IEDM19573.2019.8993670. [70] 國立台灣科技大學貴重儀器中心, “多功能高功率X光繞射儀,” Retrieved September 17, 2022, from https://sppic.ntust.edu.tw/p/406-1058-81296,r1589.php?Lang=zh-tw [71] 郭雨鑫, “以氧化銦鎵鋅作為通道層之鐵電氧化鉿鋯薄膜電晶體之研究, ” 碩士論文, 光電工程研究所, 國立台灣大學, pp. 75-80, 2021. [72] 國家研究實驗室,“E-beam 結構與操作原理,” Retrieved September 18, 2022 fromhttps://www.narlabs.org.tw/xcscience/cont?xsmsid=0I148638629329404252&sid=0K267578927213565139 [73] M. M. Hasan, C. W. Ahn, T. H. Kim, and J. Jang, “Solution processed high performance ferroelectric Hf0.5Zr0.5O2 thin film transistor on glass substrate,” Appl. Phys. Lett., vol. 118, no. 15, p. 152901, Apr. 2021, doi: 10.1063/5.0035653. [74] J. H. Choi, Y. Mao, J.P. Chang, “ Development of hafnium based high-k materials- A review, ” Mater. Sci. Eng. R Rep., vol. 72, no. 6, pp.97-136, Jul. 2011, doi: 10.1016/j.mser.2010.12.001 | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/86075 | - |
| dc.description.abstract | 本研究主要探討可撓性鐵電電晶體在記憶體之應用。以金屬 / 鐵電材料 / 金屬 / 介電層 / 半導體( Metal - Ferroelectric - Metal - Insulator - Semiconductor, M - F - M - I - S )之結構於聚醯亞胺軟性基板( Polyimide, PI )製備鐵電電晶體( Ferroelectric Thin - Film Transistor, FeTFT )，由於PI基板其玻璃轉移溫度( Glass transition temperature, Tg )的限制，可耐受之製程溫度需控制約在400OC，故開發350OC低溫製程，並對鐵電層加入一介面層( Interface layer, IL )期望增加記憶窗口( Memory window, MW )。本研究使用Al2O3以及ZrO2兩種不同介面層，探討封裝前後對記憶窗口之影響，成功在加入介面層後使記憶窗口增加，在背通道裸露情況，其記憶窗口以ZrO2做為介面層之HZO鐵電層參數達4.3 V。待IGZO背通道經SiO2封裝後，去除外界水氣、氧氣等環境影響，並且由於300OC的封裝製程， 對於IGZO主動層以及鐵電層亦具有退火處理效果，使得三種鐵電層參數之記憶窗口皆有增加趨勢，尤其以Al2O3做為介面層之HZO鐵電層為最大，達5.8 V。除此之外，記憶窗口的增加實現多層式存儲操作( multilevle cell/code operation, MLC )，利用鐵電材料中電偶極部分翻轉特性，增加記憶密度，於multi - state VTH在無介面層及以ZrO2為介面層之鐵電電晶體達到2 bit；而以Al2O3做為介面層之鐵電電晶體則可達到3 bit。 | zh_TW |
| dc.description.abstract | In this work, ferroelectric thin-film transistors ( Fe - TFTs ) with metal / ferroelectric / metal / insulator / semiconductor ( M - F - M - I - S ) structure are developed by monolithically integrating HfZrO2 ( HZO ) ferroelectric capacitors with amorphous indium-gallium-zinc oxide ( a-IGZO ) TFTs on Polyimide ( PI ) substrates. Since the PI substrate can withstand temperatures only up to ~400C, a low-temperature (350C ) process is developed for the Fe – TFTs. In addition, an interlayer is introduced to enlarge the memory window (MW). Al2O3 and ZrO2 are used as the interface layer here. The MW of back-channel exposed a-IGZO TFT with an ZrO2 interface layer, reaches 4.3 V. The MWs are enlarged after the back-channel is passivated by SiO2. In particular, the MW of the a-IGZO TFT with an Al2O3 interface layer achieves 5.8 V. This can be attributed to the protection of channel against the influence of moisture and oxygen and the annealing effect during the deposition of passivation layer at 300C. The large MW can enable multilevel cell/code operation ( MLC ). The partial flipping of ferroelectric dipoles can be applied to high-density memory applications. Finally, 2 - bit operation is demonstrated in the Fe-TFT without the interface layer or with a ZrO2 interface layer, and 3 - bit operation is achieved in the Fe - TFT with an Al2O3 interface layer. | en |
| dc.description.provenance | Made available in DSpace on 2023-03-19T23:35:40Z (GMT). No. of bitstreams: 1 U0001-2609202213345500.pdf: 7467969 bytes, checksum: 1e43ea8ce803619e9bf27ef17988eabf (MD5) Previous issue date: 2022 | en |
| dc.description.tableofcontents | 誌謝 I 摘要 II Abstract III 目錄 IV 圖目錄 VIII 表目錄 XIV 第一章 緒論 1 1.1 研究背景 1 1.2 研究動機與目的 3 1.3 論文架構 5 第二章 理論基礎與文獻回顧 7 2.1 薄膜電晶體簡介 7 2.1.1 薄膜電晶體之元件結構 7 2.1.2 薄膜電晶體之工作原理 9 2.1.3 薄膜電晶體之介電層電性分析 10 2.1.4 薄膜電晶體之特徵參數 11 2.2 鈍化層對於氧化銦鎵鋅薄膜電晶體之影響 15 2.3 氧化鉿基之鐵電特性 17 2.3.1 氧化鉿基之鐵電材料 17 2.3.2 退火處理對HZO之鐵電性形成機制 17 2.3.3 鐵電電容其上下電極材料對HZO薄膜之影響 21 2.4 氧化物半導體作為通道之HZO鐵電電晶體式記憶體 25 2.4.1 鐵電電晶體式記憶體 25 2.4.2 M - F - I - S結構之鐵電電晶體式記憶體 27 2.4.3 M - F - M - I - S之鐵電電晶體式記憶體 30 2.4.4 溫度之於鐵電電電晶體之電性表現 33 2.5 低溫製程下之可撓性鐵電電晶體 36 2.5.1 有機鐵電材料 36 2.5.2 氧化鉿鋯鐵電材料 39 2.6 Interface layer對於鐵電電晶體之影響 43 第三章 實驗方法與步驟 47 3.1 薄膜沉積方法 47 3.1.1 電子束蒸鍍系統 47 3.1.2 射頻磁控濺鍍系統 48 3.1.3 原子層沉積系統 49 3.1.4 電漿輔助化學氣相沉積系統 50 3.1.5 X光繞射分析儀 52 3.2 黃光微影製程 53 3.3 蝕刻製程 55 3.3.1 濕式蝕刻製程 55 3.3.2 乾式蝕刻製程 56 3.4 金屬 / 介電層 / 金屬( M - I - M )電容製備流程 58 3.5 GIXRD量測分析鐵電層薄膜製備流程 60 3.6 鐵電電容串聯IGZO TFT之製備流程 61 3.6.1 鐵電電容串聯IGZO TFT之尺寸介紹 61 3.6.2 PI軟性基板、鐵電電容與IGZO TFT製作流程 63 3.7 量測分析 71 3.7.1 電容-電壓（C-V）量測方法 71 3.7.2 M - F - M鐵電電容P - V Curve量測方法 72 3.7.3 IGZO薄膜電晶體量測方法 73 3.7.4 鐵電電容串聯IGZO TFT量測方法 74 3.7.5 鐵電電晶體之Multilevel of Endurance量測方法 75 3.7.6 鐵電電容串聯IGZO TFT之Multi - state of VTH 量測方法 76 第四章 結果與討論 77 4.1 鐵電電容特性分析 77 4.1.1 鐵電層之晶相特性分析 77 4.1.2 鐵電層之C-V特性分析 80 4.1.3 鐵電層之P-V特性分析 82 4.2 IGZO TFT元件特性分析 84 4.2.1 介電層之C-V特性分析 84 4.2.2 IGZO TFT 背通道裸露與封裝SiO2電性分析 85 4.3 鐵電電晶體封裝前後之特性分析 90 4.3.1 背通道層裸露之鐵電電晶體特性 91 4.3.2 封裝後鐵電電晶體之特性 104 4.4 鐵電電晶體之記憶效應 119 4.5 鐵電電晶體之Multi-state of VTH 分析[63] 123 4.6 鐵電電晶體之Endurance分析 128 4.6.1 短Pulse Width之Stress的Multilevel of Endurance量測 128 4.6.2 長Pulse Width之Stress的Multilevel of Endurance量測 130 第五章 結論 134 5.1 結論 134 5.2 未來展望 136 A. 附錄 138 I.以GIXRD分析金屬應力對鐵電層結晶之影響 138 II.ZrO2之C - V特性量測 140 III.可撓性電性量測分析 141 參考文獻 147 | |
| dc.language.iso | zh-TW | |
| dc.title | 以氧化銦鎵鋅作為通道層之可撓性氧化鉿鋯鐵電薄膜電晶體之研究 | zh_TW |
| dc.title | Flexible HfZrO2 Ferroelectric Thin-Film Transistors Based on InGaZnO Channels | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 110-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 陳建彰(Jian-Zhang Chen),李敏鴻(Min-Hung Lee) | |
| dc.subject.keyword | M - F - M - I - S,可撓性基板,鐵電薄膜電晶體,氧化鉿鋯,氧化銦鎵鋅,介面層Al2O3 & ZrO2,多層式存儲, | zh_TW |
| dc.subject.keyword | M - F - M - I - S,Flexible substrate,Fe - TFT,HZO,IGZO,Interface layer Al2O3 & ZrO2,Multilevel cell/code operation, | en |
| dc.relation.page | 154 | |
| dc.identifier.doi | 10.6342/NTU202204083 | |
| dc.rights.note | 同意授權(全球公開) | |
| dc.date.accepted | 2022-09-29 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
| dc.date.embargo-lift | 2024-09-28 | - |
| 顯示於系所單位： | 光電工程學研究所 | |
文件中的檔案：
| 檔案 | 大小 | 格式 | |
|---|---|---|---|
| U0001-2609202213345500.pdf | 7.29 MB | Adobe PDF | 檢視/開啟 |
系統中的文件，除了特別指名其著作權條款之外，均受到著作權保護，並且保留所有的權利。