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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 陳敏璋(Miin-Jang Chen) | |
| dc.contributor.author | Wei-Chung Kao | en |
| dc.contributor.author | 高偉中 | zh_TW |
| dc.date.accessioned | 2023-03-19T23:25:43Z | - |
| dc.date.copyright | 2022-04-26 | |
| dc.date.issued | 2022 | |
| dc.date.submitted | 2022-03-07 | |
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/85830 | - |
| dc.description.abstract | 三族氮化物半導體由於具有寬能隙、較強的鍵結、以及良好導熱特性等優越的物理性質，因此於高頻、高功率的應用具有良好的前景。本論文透過電漿輔助原子層沉積結合創新的原子層退火技術，開發高品質的氮化鋁磊晶薄膜以及氮化鋁/氮化鎵超晶格結構，並利用大面積電子束退火成長出高品質氮化鋁磊晶薄膜。本論文第一部分，我們透過原子層退火技術進行原位、逐層電漿退火處理，成功於攝氏300度的低溫，於碳化矽基板上成長出厚度僅20奈米的高品質氮化鋁磊晶薄膜。本論文第二部分的研究主題為電子束退火技術。我們利用大面積電子束照射位於藍寶石基板上的氮化鋁奈米薄膜，大幅提高氮化鋁薄膜的結晶品質。研究結果顯示大面積、快速的電子束退火，對於低熱預算的退火製程是相當關鍵的技術。接下來，本論文利用電漿增強原子層沉積技術成長氮化鋁/氮化鎵超晶格結構，並透過原子層退火處理來提升磊晶品質。我們能透過改變氮化鋁與氮化鎵的厚度以達到微調其能隙的目的。本研究將原子層退火技術的應用從薄膜擴展到超晶格結構，成功在低溫下成長出能隙可調控的高品質氮化鋁/氮化鎵超晶格磊晶層。最後，我們透過對三甲基鋁前驅物時進行電漿處理，使得使用原子層沉積技術所成長之氮化鋁薄膜的成長速度得到提升，並大幅提升氮化鋁薄膜的結晶品質。 | zh_TW |
| dc.description.abstract | Because of excellent physical properties such as wide bandgap, strong bonds, and good thermal conductivity, group-III nitride semiconductors have been wide recognized as very promising materials for high-frequency and high-power applications. By utilizing plasma enhanced atomic layer deposition (PEALD) along with the atomic layer annealing (ALA) technique, we are able to deposit AlN and AlN/GaN superlattice with excellent epitaxial quality in this thesis. In addition, high quality AlN epilayers are achieved via the large-area electron beam annealing (EBA) technique. In the first part of this thesis, the growth of high quality AlN epilayers on SiC wafer at a temperature as low as 300 °C were realized by incorporating the in-situ, layer-by-layer plasma treatment referred to as the ALA technique. In the second part of this thesis, electron irradiation in a large EBA system was used to greatly improve the crystalline quality of the AlN thin films on sapphire substrates. The research results demonstrate that the large-area, rapid EBA system is a critical technique for the annealing process with a low thermal budget. Next, we utilized the PEALD and ALA techniques to deposit AlN/GaN superlattice structure with a high crystallinity. The bandgap energy can be tailored by changing the thickness of each layer. The result indicates that the applications of the ALA technique have been extended from nanoscale thin films to superlattice structures, and high-quality superlattice epilayers with adjustable bandgap energy have also been achieved. Finally, the growth per cycle (GPC) and the crystallinity of AlN thin films prepared by PEALD were significantly enhanced by the plasma treatment on the trimethylaluminum precursor. This research demonstrates that the growth rate and the crystal quality of nanoscale thin films can be tailored by the plasma treatment on the precursors used in the ALD process. | en |
| dc.description.provenance | Made available in DSpace on 2023-03-19T23:25:43Z (GMT). No. of bitstreams: 1 U0001-0403202215071300.pdf: 4604405 bytes, checksum: 45c6ff8c08ac74806fc331cc9cd2b7d7 (MD5) Previous issue date: 2022 | en |
| dc.description.tableofcontents | 致謝 i 摘要 ii Abstract iii Content v List of Figures vii Chapter 1 Introduction 1 1.1 Motivation 1 1.2 Outline of this thesis 3 Chapter 2 Background 5 2.1 III-Nitride semiconductors 5 2.1.1 Introduction 5 2.1.2 Gallium nitride 8 2.1.3 Aluminum Nitride 10 2.1.4 AlGaN alloy 11 2.1.5 Superlattice 12 2.1.6 Substrates for III-nitride epitaxy 14 2.2 Atomic Layer Deposition 18 2.2.1 Introduction 18 2.2.2 Mechanism 22 Chapter 3 AlN on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing 30 3.1 Introduction 30 3.2 Experimental Section 33 3.3 Results and discussions 35 3.4 Conclusion 43 Chapter 4 High-quality AlN epilayer via rapid large-area electron beam annealing 44 4.1 Introduction 44 4.2 Experimental Section 46 4.3 Results and discussions 48 4.4 Conclusion 57 Chapter 5 AlN/GaN superlattice via Atomic layer Annealing 59 5.1 Introduction 59 5.2 Experimental Section 60 5.3 Results and discussions 62 5.4 Conclusion 71 Chapter 6 AlN nanofilms with TMA plasma treatment and in-situ atomic layer annealing for enhanced growth rate and crystal quality 72 6.1 Introduction 72 6.2 Experimental Section 74 6.3 Results and discussions 75 6.4 Conclusion 83 Chapter 7 Summary 84 References 86 | |
| dc.language.iso | zh-TW | |
| dc.subject | 原子層退火技術 | zh_TW |
| dc.subject | 電子束退火技術 | zh_TW |
| dc.subject | 氮化鋁/氮化鎵超晶格 | zh_TW |
| dc.subject | 氮化鋁 | zh_TW |
| dc.subject | 原子層沉積技術 | zh_TW |
| dc.subject | electron beam annealing | en |
| dc.subject | atomic layer deposition (ALD) | en |
| dc.subject | AlN | en |
| dc.subject | AlN/GaN superlattice | en |
| dc.subject | atomic layer annealing (ALA) | en |
| dc.title | 以原子層磊晶與電子束退火成長高品質氮化鋁磊晶薄膜及氮化鋁/氮化鎵超晶格 | zh_TW |
| dc.title | High quality AlN epilayer and AlN/GaN superlattice via atomic layer epitaxy and electron beam annealing | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 110-2 | |
| dc.description.degree | 博士 | |
| dc.contributor.author-orcid | 0000-0002-6601-8786 | |
| dc.contributor.oralexamcommittee | 吳肇欣(Chao-Hsin Wu),李志偉(Jyh-Wei Lee),陳良益(Liang-Yih Chen),陳建彰(Jian-Zhang Chen) | |
| dc.subject.keyword | 原子層沉積技術,原子層退火技術,氮化鋁,氮化鋁/氮化鎵超晶格,電子束退火技術, | zh_TW |
| dc.subject.keyword | atomic layer deposition (ALD),atomic layer annealing (ALA),AlN,AlN/GaN superlattice,electron beam annealing, | en |
| dc.relation.page | 99 | |
| dc.identifier.doi | 10.6342/NTU202200616 | |
| dc.rights.note | 同意授權(全球公開) | |
| dc.date.accepted | 2022-03-07 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 材料科學與工程學研究所 | zh_TW |
| dc.date.embargo-lift | 2022-04-26 | - |
| 顯示於系所單位： | 材料科學與工程學系 | |
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