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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 管傑雄(Chieh-Hsiung Kuan) | |
dc.contributor.advisor | 管傑雄(Chieh-Hsiung Kuan | chkuan@ntn.edu.tw | ), | |
dc.contributor.author | Chao-Ying Li | en |
dc.contributor.author | 李昭穎 | zh_TW |
dc.date.accessioned | 2023-03-19T22:26:43Z | - |
dc.date.copyright | 2022-09-07 | |
dc.date.issued | 2022 | |
dc.date.submitted | 2022-08-31 | |
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Li, X., et al., Graphene and related two-dimensional materials: Structure-property relationships for electronics and optoelectronics. Applied Physics Reviews, 2017. 4(2): p. 021306. 8. Blomquist, N., Large-Scale Nanographite Exfoliation for Low-Cost Metal-Free Supercapacitors. 2016. 9. Du, H., et al., Recent Development in Black Phosphorus Transistors. J. Mater. Chem. C, 2015. 3. 10. Kadantsev, E.S. and P. Hawrylak, Electronic structure of a single MoS2 monolayer. Solid State Communications, 2012. 152(10): p. 909-913. 11. Splendiani, A., et al., Emerging Photoluminescence in Monolayer MoS2. Nano Letters, 2010. 10(4): p. 1271-1275. 12. Minzioni, P., et al., Roadmap on all-optical processing. Journal of Optics, 2019. 21(6): p. 063001. 13. Kim, S.H., et al., All-optical half adder using cross gain modulation in semiconductor optical amplifiers. Optics Express, 2006. 14(22): p. 10693-10698. 14. Taraphdar, C., T. Chattopadhyay, and J.N. Roy, Mach–Zehnder interferometer-based all-optical reversible logic gate. Optics & Laser Technology, 2010. 42(2): p. 249-259. 15. Zeng, S., et al., Ultrasmall optical logic gates based on silicon periodic dielectric waveguides. Photonics and Nanostructures, 2010. 8: p. 32-37. 16. Li, M., et al., The fabrication of a self-powered CuInS2/TiO2 heterojunction photodetector and its application in visible light communication with ultraviolet light encryption. Journal of Materials Chemistry C, 2021. 9(41): p. 14613-14622. 17. Li, H., et al., From Bulk to Monolayer MoS2: Evolution of Raman Scattering. Advanced Functional Materials, 2012. 22(7): p. 1385-1390. 18. Tang, D., et al., Field effect properties of single-layer MoS2(1−x)Se2x nanosheets produced by a one-step CVD process. Journal of Materials Science, 2018. 53. 19. Lopez-Sanchez, O., et al., Ultrasensitive photodetectors based on monolayer MoS2. Nature Nanotechnology, 2013. 8(7): p. 497-501. 20. Vaquero, D., et al., Fast response photogating in monolayer MoS2 phototransistors. Nanoscale, 2021. 13(38): p. 16156-16163. 21. Late, D.J., et al., Hysteresis in Single-Layer MoS2 Field Effect Transistors. ACS Nano, 2012. 6(6): p. 5635-5641. 22. Huang, Y., et al., Van der Waals Coupled Organic Molecules with Monolayer MoS2 for Fast Response Photodetectors with Gate-Tunable Responsivity. ACS Nano, 2018. 12(4): p. 4062-4073. 23. Sekatskii, S.K. and V.S. Letokhov, Electron tunneling time measurement by field-emission microscopy. Physical Review B, 2001. 64(23): p. 233311. 24. Yang, K.N., et al. Edge hole direct tunneling in off-state ultrathin gate oxide p-channel MOSFETs. in International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138). 2000. 25. Chanana, R., et al., Fowler–Nordheim hole tunneling in p-SiC/SiO2 structures. Applied Physics Letters, 2000. 77: p. 2560-2562. 26. Chiu, F.-C., A Review on Conduction Mechanisms in Dielectric Films. Advances in Materials Science and Engineering, 2014. 2014: p. 1-18. 27. Özavcı, E., et al., A detailed study on current–voltage characteristics of Au/n-GaAs in wide temperature range. Sensors and Actuators A: Physical, 2013. 194: p. 259-268. 28. Mathai, A.J., C.K. Sumesh, and B.P. Modi, Schottky Barriers on Layered Anisotropic Semiconductor ¨C WSe<sub>2</sub> ¨C with 1000 Å Indium Metal Thickness. Materials Sciences and Applications, 2011. Vol.02No.08: p. 7. 29. Kim, H., et al., Temperature-Dependent Electrical Characteristics of Ag Schottky Contacts to Differently Grown O-Polar Bulk ZnO. Journal of Electronic Packaging, 2013. 135: p. 011010. 30. Xie, Y., et al., Ultrabroadband MoS2 Photodetector with Spectral Response from 445 to 2717 nm. Advanced Materials, 2017. 29(17): p. 1605972. 31. Xie, Y., et al., Room-Temperature Ultrabroadband Photodetection with MoS2 by Electronic-Structure Engineering Strategy. Advanced Materials, 2018. 30(50): p. 1804858. 32. Liu, X., et al., Self-powered, high response and fast response speed metal–insulator–semiconductor structured photodetector based on 2D MoS2. RSC Advances, 2018. 8(49): p. 28041-28047. 33. Zhang, X.-M., S.-H. Tseng, and M.-Y. Lu, Large-Area Ultraviolet Photodetectors Based on p-Type Multilayer MoS2 Enabled by Plasma Doping. Applied Sciences, 2019. 9(6): p. 1110. 34. Huang, Z., et al., Amorphous MoS2 Photodetector with Ultra-Broadband Response. ACS Applied Electronic Materials, 2019. 1(7): p. 1314-1321. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/84808 | - |
dc.description.abstract | 近年來電子邏輯門控在準確和快速計算方面開始面臨限制,難以支撐未來對廣泛數據處理的爆炸性需求,為了因應速度的需求於是光子傳輸訊號的方式成了討論話題,雖然全光邏輯門控看來是有利候選者之一,然而不論是聚光或是收光都需要複雜的光學組件來構建,實務上不易於實踐,因此近期一種光電邏輯門控受到關注,不僅不需像全光邏輯閘複雜的組件問題,也具備了光子在速度上的優勢,因而備受矚目,近期相關研究由於材料多屬於單向傳輸運行,研究大都僅展現了AND 或 OR 邏輯閘功能,但這樣遠遠不夠,因此如何實現多功能的光電邏輯閘是目前較為迫切的問題。 二硫化鉬由於其具備的半導體性質以及原子級厚度為現今討論度最高的二維材料之一,且具備可見光波段的發光能力適合作為光偵測器,然而傳統以橫向傳輸為主的二硫化鉬電晶體易受水氣分子極性以及介面陷阱影響,容易在電子傳輸時發生持續光傳導(Persistent Photo Conductive, PPC) 效應,導致光響應時間非常慢(約45.7s)。 在此,本研究探討一種垂直傳輸的單層二硫化鉬元件,避開了傳統橫向傳輸面臨的持續光傳導(PPC)的影響,我們利用薄約30nm厚度之二氧化矽作為絕緣層,使熱電子發射機制主導的暗電流藉由可見光的激發能夠引起FN穿隧的光電流,不僅極大的減少了其光響應時間(上升時間約3.52ms以及下降時間約1.54ms),還達到了光響應度約0.3 A/W 以及偵測度約7.4 x 109 Jones,更有趣的是,藉由結構中二硫化鉬的載子受光激發後產生的穿隧電流展現了雙向光響應性質,根據此特性我們將元件組合成4種基本光邏輯閘(OR、AND、NOR、NAND),得以利用二硫化鉬元件實現多功能的光電邏輯閘。 | zh_TW |
dc.description.abstract | In recent years, electronic logic gate begins to face limitations in accurate and fast computation, and it is difficult to support the explosive demand for extensive data processing in the future. In order to meet the demand for speed, photon transmission has become a topic of discussion, although all-optical logic gate seems to be a great candidate, however, both concentrating and receiving light require complex optical components to construct, which is not easy to implement. Therefore, a photoelectric logic gate has recently attracted lots of attention, which not only does not need to face the complex components of all-optical logic gate, and it also has the advantage of photons in speed, so it has attracted much attention. Since most of the recent related researches are unidirectional transmission operation, most of the researches only show the function of AND or OR logic gate, but this is far from enough, so how to realize multifunctional photoelectric logic gate is a more urgent problem at present. Molybdenum disulfide (MoS2) is one of the most discussed two-dimensional materials due to its semiconducting properties and atomic thickness, and its luminescence in the visible light band is suitable for use as a photodetector. However, the traditional lateral transmission-based MoS2 photodetector are easily affected by the polarity of water vapor molecules and interface traps, and are prone to persistent photoconductive (PPC) effect during electron transport, resulting in a very slow photo response time (about 45.7s). Here, this study investigates a vertically transported single-layer MoS2 device, which avoids the influence of PPC. We use a thin SiO2 with a thickness of about 30 nm as an insulating layer, so that the dark current dominated by the thermionic emission mechanism is transmitted by the excitation of visible light can induce the photocurrent of FN tunneling, which not only greatly reduces its photo response time (rise time is about 3.52ms and fall time is about 1.54ms), but also achieves responsivity of about 0.3 A/W and detectivity of about 7.4 x 109 Jones. What is more interesting is that the tunneling current which is induced by photo shows bidirectional photo response properties. Finally, we successfully combine the three MoS2 device to implement four basic optical logic gates (OR, AND, NOR, NAND). | en |
dc.description.provenance | Made available in DSpace on 2023-03-19T22:26:43Z (GMT). No. of bitstreams: 1 U0001-2408202201030900.pdf: 3550881 bytes, checksum: 396e5e504cc1af20b6f6ddfbd6a09790 (MD5) Previous issue date: 2022 | en |
dc.description.tableofcontents | 口試委員審定書 ii 致謝 iii 中文摘要 iv Abstract v 目錄 vii 圖目錄 x 表目錄 xiii 第1章 緒論 14 1.1 二維材料發展及潛力 15 1.2 二維材料種類及介紹 16 1.3 光電邏輯門介紹 20 第2章 理論基礎 22 2.1 二硫化鉬材料分析 22 2.1.1 二硫化鉬拉曼(Raman)量測 22 2.1.2 二硫化鉬光致發光(Photoluminescence, PL)量測 24 2.1.3 二硫化鉬X射線光電子能譜學(XPS) 25 2.2 二硫化鉬電晶體電特性 27 2.2.1 二硫化鉬持續光傳導 (PPC) 效應 27 2.2.2 光響應度與偵測度 28 2.3 量子穿隧機制 30 2.3.1 直接穿隧(Direct tunneling) 31 2.3.2 Folwer – Nordheim穿隧(FN tunneling) 32 2.3.3 熱電子發射(TE) 33 2.4 元件設計與機制 35 第3章 儀器介紹與製成方式 38 3.1 製成儀器介紹 38 3.1.1 旋轉塗佈機(Spin Coater) 38 3.1.2 電子束微影系統(Electron Beam Lithography) 39 3.1.3 熱蒸鍍機(Thermal Evaporator) 40 3.2 量測儀器介紹 41 3.2.1 微拉曼光譜量測系統(μ-Raman) 41 3.2.2 電性量測系統(Electrical measurement) 42 3.3 製成步驟 43 3.3.1 底層基板製作 43 3.3.2 二硫化鉬製備 43 3.3.3 二硫化鉬轉移方式 44 3.3.4 電極設計 46 3.3.5 光電基本邏輯閘 48 第4章 實驗結果與分析 50 4.1 二硫化鉬材料性質分析 50 4.1.1 二硫化鉬拉曼(Raman)訊號 50 4.1.2 二硫化鉬光致發光(PL)訊號 51 4.1.3 二硫化鉬X射線光電子能譜學(X-ray photoelectron spectroscopy, XPS)分析 51 4.2 元件光電特性分析 52 4.2.1 三端/兩端電性量測 52 4.2.2 響應時間 54 4.2.3 電性理論分析 55 4.2.4 溫度效應 58 4.2.5 不同功率雷射光之光響應 60 4.2.6 響應度、偵測度 61 4.2.7 二硫化鉬光偵測器性能比較 63 4.3 光電邏輯閘 64 第5章 結論與未來展望 66 參考文獻 67 | |
dc.language.iso | zh-TW | |
dc.title | 應用於光電邏輯閘之光致量子隧穿二硫化鉬元件 | zh_TW |
dc.title | Photo induced quantum tunneling MoS2 device for optoelectronic logic gate applications | en |
dc.type | Thesis | |
dc.date.schoolyear | 110-2 | |
dc.description.degree | 碩士 | |
dc.contributor.coadvisor | 藍彥文(Yann-Wen Lan) | |
dc.contributor.oralexamcommittee | 蘇炎坤(YAN-KUN SU) | |
dc.subject.keyword | 單層二硫化鉬光感測器,FN穿隧電流,光響應,光偵測度,光電邏輯閘, | zh_TW |
dc.subject.keyword | Monolayer molybdenum disulfide photodetector,Fowler-Nordheim Tunneling,Optoelectronic logic gate,Responsivity,Detectivity, | en |
dc.relation.page | 70 | |
dc.identifier.doi | 10.6342/NTU202202735 | |
dc.rights.note | 同意授權(限校園內公開) | |
dc.date.accepted | 2022-08-31 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
dc.date.embargo-lift | 2022-09-07 | - |
顯示於系所單位: | 電子工程學研究所 |
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