光電可控發光電阻式記憶體

Abstract

電阻式隨機存取記憶體憑藉其快速、提升成本效益以及與當前科技的兼容性等諸多優勢，成為半導體行業未來發展的決定性因素。然而隨機存取記憶體的電讀取陣列通常是以串聯的方法連接，這限制了它的最大數據存儲密度和處理速度。這項缺點可以通過可光學讀取的存儲設備來克服。在這個研究裡，我們展現了一種前所未有的光電可控發光電阻式隨機存取記憶體。該元件採用串聯結構，由發光電阻式隨機存取記憶體和鈣鈦礦型太陽能電池組成。元件的狀態可以通過電學和光學兩種方式進行編碼，分為高電阻態和低電阻態。有趣的是，該器件在低電阻狀態下可展現電致發光，這提供了以光學方式讀取編碼信號的能力。通過與太陽能電池的整合，整個設備能夠輔助發光的電阻式隨機存取記憶體進而實現光學寫入的獨特功能。與傳統一般的記憶體相比，我們設計的具有光/電編碼和電/光讀取功能的設備對於下一代通訊技術的發展是非常有幫助且適時的。

Resistive random access memory (RRAM) emerges as a decisive player for the future development of semiconductor industry due to its many advantages, such as high speed, cost effectiveness, excellent scalability and compatibility with current technology. However, the electrical reading of RRAM array is usually in series sequence, which limits its maximum data storage density and processing speed. This drawback can be solved by optically readable memory devices. Herein, we demonstrate an unprecedented optically and electrically controllable light emitting RRAM. This device uses a tandem structure which is composed of a light emitting RRAM and a perovskite solar cell (PSC). The state of the device can be encoded by both electrically and optically, with high resistive state and low resistive state. Interestingly, the device exhibits electroluminescence (EL) in the low resistive state, which provides the capability for reading the encoded signal optically. By integrating with a solar cell, the whole device enables to assist on the light emitting RRAM to achieve the unique feature of optical writing. Compared with conventional memory, our designed device with multiple functionalities of optical/electrical encoding and electrical/optical reading should be very useful and timely for the development of next generation information technology.