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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/82994完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 陳敏璋(Miin-Jang Chen) | |
| dc.contributor.author | Wei-Hao Lee | en |
| dc.contributor.author | 李偉豪 | zh_TW |
| dc.date.accessioned | 2022-11-25T08:04:32Z | - |
| dc.date.copyright | 2021-04-28 | |
| dc.date.issued | 2021 | |
| dc.date.submitted | 2021-04-28 | |
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S., Modeling of threading dislocation reduction in growing GaN layers. J. Cryst. Growth 2001, 231 (3), 371-390. [157]Andre, Y.; Trassoudaine, A.; Tourret, J.; Cadoret, R.; Gil, E.; Castelluci, D.; Aoude, O.; Disseix, P., Low dislocation density high-quality thick hydride vapour phase epitaxy (HVPE) GaN layers. J. Cryst. Growth 2007, 306 (1), 86-93. [158]Chen, Y.; Chen, Z.; Li, J.; Chen, Y.; Li, C.; Zhan, J.; Yu, T.; Kang, X.; Jiao, F.; Li, S.; Zhang, G.; Shen, B., A study of GaN nucleation and coalescence in the initial growth stages on nanoscale pa……… | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/82994 | - |
| dc.description.abstract | "半個世紀以來，在積體電路的特徵尺度積極地微縮下，使得電子元件的許多應用有了快速的發展，大大地改變了人類的生活。由於三五族氮化物材料具有寬能隙與熱穩定性佳等優勢，成為具有良好發展前景的重要第三代半導體材料。另一方面，由於原子層沉積(atomic layer deposition, ALD)是具有精準製備奈米等級薄膜的優秀技術，本論文藉由發展基本的ALD技術，進一步開發出許多進階的原子層技術，如原子層退火(atomic layer annealing, ALA)、原子層磊晶(atomic layer epitaxy, ALE)、與區域選擇性原子層沉積(area-selective atomic layer deposition, AS-ALD)等等，並應用於製備高品質三五族氮化物薄膜。 在本論文第一部分，我們成功開發具有逐層(layer-by-layer)、原位(in-situ)處理特性的ALA與ALE技術，在低的成長溫度(300oC)實現在藍寶石基板上高品質奈米GaN磊晶薄膜。我們在每個 ALD 周期中加入低功率電漿的逐層、原位氦氣與氬氣(He/Ar)混合電漿ALA 處理，Ar 之解離率可以透過「潘尼效應」(Penning effect)因處於介穩(metastable)態的He離子的存在而提高，將能量由電漿轉移到沉積薄膜表面上，從而改善 GaN薄膜的結晶品質與薄膜特性。 本論文第二部分對於加熱深度小於5個原子層之ALA技術進行了描述和論證。我們在ALD 製程的每個周期中加入逐層、原位氬氣電漿轟擊(即ALA處理)，使得AlN 薄膜的結晶度、薄膜密度、介電常數都有顯著地提升，並且漏電流密度與缺陷密度亦能有效被抑制；研究顯示，ALA技術的影響深度，隨著轟擊間格(cycle spacing)的上升而降低，從而得知ALA之加熱深度約小於5個原子層。結果表明，具有精確控制次奈米加熱深度的ALA技術，對實現高品質的奈米材料和元件是關鍵技術。 本論文的第三部分藉由大面積、快速電子束退火(electron beam annealing, EBA)技術，顯著提高在藍寶石基板上奈米GaN薄膜的晶體品質。GaN薄膜的X-ray搖動曲線(rocking curve)的半高寬度僅為185 arcsec，顯示GaN薄膜具有高結晶品質，可歸因於電子照射到薄膜表面導致高效的能量傳輸。在高解析度穿透式電子顯微鏡影像中，可以觀察到非常清晰的晶格條紋，也顯示具有高結晶品質的GaN薄膜。經由快速EBA處理後的GaN薄膜，其表面依舊平滑，表示快速EBA處理並沒有造成對薄膜明顯的損害。實驗結果說明了具有低損傷、大面積、快速處理特性的EBA技術，對於需要低熱預算的退火製程是至關重要的技術。 最後，我們提出了原子層成核工程(atomic layer nucleation engineering, ALNE)，實現了無選擇性損失(selectivity loss)的AS-ALD技術。其關鍵是藉由通過基板射頻偏壓(substrate RF bias)在沉積區域與非沉積區域表面前驅物(precursor)吸附強度的差異，來造成薄膜的成核的差異，因此實現AlN薄膜在SiO2與Pt表面的AS-ALD，在SiO2和Pt表面之間的AlN薄膜厚度差高達約8.7 nm。結果表示，將ALNE技術加入ALD製程當中，為實現無選擇性損失的AS-ALD技術敞開了一道明窗。" | zh_TW |
| dc.description.provenance | Made available in DSpace on 2022-11-25T08:04:32Z (GMT). No. of bitstreams: 1 U0001-2804202103442100.pdf: 7259485 bytes, checksum: 08df69b3e7dfca640324c81bcfdbb093 (MD5) Previous issue date: 2021 | en |
| dc.description.tableofcontents | "口試委員會審定書 i 致謝 ii 摘要 iii Abstract vi Content ix List of figures xi Chapter 1 Introduction 1 1.1 Motivation 1 1.2 Outline of this thesis 3 Chapter 2 Background 6 2.1 Group-III Nitride 6 2.1.1 Introduction 6 2.1.2 Basic characteristic of III Nitrides 8 2.1.3 Defects in Group-III Nitride Hetero-structures 12 2.2 Atomic Layer Deposition (ALD) 23 2.2.1 Introduction 23 2.2.2 Mechanism 27 2.2.3 Advanced ALD 37 Chapter 3 Nanoscale GaN epilayer grown by atomic layer annealing and epitaxy at low temperature 45 3.1 Introduction 45 3.2 Methods 48 3.3 Results and discussions 51 3.3.1 Structure and crystal quality of the GaN layers grown by ALAE 51 3.3.2 Chemical composition, depth profile, and chemical bonding of the GaN epilayer grown by ALAE 62 3.3.3 Optical and electrical properties of the GaN epilayer grown by ALAE 66 3.4 Conclusion 68 Chapter 4 Sub-nanometer heating depth of atomic layer annealing 69 4.1 Introduction 69 4.2 Methods 72 4.3 Results and discussions 76 4.3.1 Structure and crystal quality of the AlN layers 76 4.3.2 X-ray reflectivity profile of the AlN layers 83 4.3.3 Reduction in threading dislocation (TD) density in the AlN epilayer 86 4.3.4 Chemical composition and chemical bonding of the AlN 89 4.4 Conclusion 91 Chapter 5 Large area and rapid electron beam annealing for high-quality epitaxial GaN layer 92 5.1 Introduction 92 5.2 Methods 95 5.3 Results and discussions 97 5.3.1 Structure and crystal quality of the GaN layers 97 5.3.2 Surface morphology and roughness of the GaN layers 101 5.3.3 Chemical composition and chemical bonding of the GaN layers treated by EBA 105 5.3.4 Optical characteristic of the GaN layers treated by EBA 106 5.4 Conclusion 108 Chapter 6 Selective-area growth of AlN by atomic layer nucleation engineering 110 6.1 Introduction 110 6.2 Methods 112 6.3 Results and discussions 115 6.3.1 Thickness characterization of high-selectivity AS-ALD 115 6.3.2 Chemical composition analysis of ~100% selectivity AS-ALD without selectivity loss 120 6.3.3 Accomplishment of AS-ALD on patterned substrates 122 6.4 Conclusion 124 Chapter 7 Summary 127 References 130 " | |
| dc.language.iso | zh-TW | |
| dc.subject | 電子束退火技術 | zh_TW |
| dc.subject | 原子層沉積 | zh_TW |
| dc.subject | 原子層磊晶 | zh_TW |
| dc.subject | 原子層退火 | zh_TW |
| dc.subject | 區域選擇性原子層沉積 | zh_TW |
| dc.subject | 氮化鎵 | zh_TW |
| dc.subject | 氮化鋁 | zh_TW |
| dc.subject | atomic layer deposition (ALD) | en |
| dc.subject | electron beam annealing (EBA) | en |
| dc.subject | AlN | en |
| dc.subject | GaN | en |
| dc.subject | area-selective atomic layer deposition (AS-ALD) | en |
| dc.subject | atomic layer annealing (ALA) | en |
| dc.subject | atomic layer epitaxy (ALE) | en |
| dc.title | 氮化鋁與氮化鎵薄膜之原子層工程 | zh_TW |
| dc.title | Atomic layer engineering of AlN and GaN ultrathin films | en |
| dc.date.schoolyear | 109-2 | |
| dc.description.degree | 博士 | |
| dc.contributor.oralexamcommittee | 蔡豐羽(Hsin-Tsai Liu),林浩雄(Chih-Yang Tseng),吳肇欣,陳建彰 | |
| dc.subject.keyword | 原子層沉積,原子層磊晶,原子層退火,區域選擇性原子層沉積,氮化鎵,氮化鋁,電子束退火技術, | zh_TW |
| dc.subject.keyword | atomic layer deposition (ALD),atomic layer epitaxy (ALE),atomic layer annealing (ALA),area-selective atomic layer deposition (AS-ALD),GaN,AlN,electron beam annealing (EBA), | en |
| dc.relation.page | 148 | |
| dc.identifier.doi | 10.6342/NTU202100860 | |
| dc.rights.note | 未授權 | |
| dc.date.accepted | 2021-04-28 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 材料科學與工程學研究所 | zh_TW |
| dc.date.embargo-lift | 2026-04-28 | - |
| 顯示於系所單位： | 材料科學與工程學系 | |
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