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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 蔡坤諭(Kuen-Yu Tsai) | |
| dc.contributor.author | Chien-Lin Lee | en |
| dc.contributor.author | 李建霖 | zh_TW |
| dc.date.accessioned | 2022-11-25T06:34:13Z | - |
| dc.date.copyright | 2021-11-02 | |
| dc.date.issued | 2021 | |
| dc.date.submitted | 2021-10-29 | |
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/82242 | - |
| dc.description.abstract | 氦離子束直接曝寫是一個可用於7奈米以下節點圖案製造的潛在替代方案，因為它的優勢包括次0.5奈米的聚焦尺寸，較輕微的鄰近效應，以及潛在比電子束更高的解析度和更好的製像真確度。利用氦離子束直接銑削技術，不需要套用任何複雜的製程最佳化，例如鄰近效應修正方法，就可以相當容易解析出低至IRDS 1.5奈米節點的圖案，而且關鍵尺寸誤差很低。本論文提出並研究了基於模型的鄰近效應修正方法於氦離子束微影中的有效性。該模型利用點擴散函數來描述入射離子束粒子於光阻中散射時涉及的所有現象。後續修正過程的圖案預測來自於點擴散函數和圖案之間的卷積所產生的能量強度分佈，並加上一個適當的光阻靈敏度閾值。本方法透過數個15到5奈米半間距的設計佈局，並在特定的製程參數下，包括加速電壓、抗蝕劑厚度和抗蝕劑靈敏度，來檢驗其於氦離子束微影上的效能 本論文也研究了利用氦離子束直接銑削於先進檢測方案的可行性和潛在優勢。藉由利用氦離子束直接銑削，製程的複雜性可以大幅降低。氦離子束製程控制的能力由其高解析度和低製程複雜性得以驗證，顯示其在檢測工具所使用的測試結構製造中的潛力。然而，氦離子束直接銑削的高劑量特性使其在製造凸型圖案時不太有利。為了緩解此一現象，本論文也探討利用氦離子束微影技術製造高解析度奈米結構的可行性和潛在優勢。 最後，初步研究結果顯示，氦離子束直接銑削和氦離子束微影技術可用為製造10奈米以下圖案的一個有潛力的選擇，如應用於前瞻節點檢測工具的設計缺陷、極紫外光微影/X光微影光罩和其他超高解析度結構。總結，氦離子束是一種具有可製造出高解析度和高精度的原型元件的可行設備，並且適合用於開發用於奈米技術的先進解決方案或新穎應用。 | zh_TW |
| dc.description.provenance | Made available in DSpace on 2022-11-25T06:34:13Z (GMT). No. of bitstreams: 1 U0001-2510202120341600.pdf: 6290897 bytes, checksum: d49acf685644d4ed7591694aa408fd48 (MD5) Previous issue date: 2021 | en |
| dc.description.tableofcontents | Acknowledgements i Abstract iii 中文摘要 v List of Publications vii Contents ix List of Figures xi List of Tables xv Chapter 1 Introduction 1 1.1 Helium Ion Microscope 1 1.2 Helium Ion Beam Patterning 5 Chapter 2 Modeling the Helium Ion Beam Lithography 11 2.1 Introduction 11 2.2 Proximity Effect Modeling of Helium Ion Beam Lithography 13 2.3 Patterning Prediction Process for Helium Ion Beam Lithography 16 2.4 Experimental Verification of the Patterning Prediction Model 19 2.4.1 Experimental Condition 20 2.4.2 Simulation Condition 22 2.4.3 Comparison of Experiment and Simulation Result 23 Chapter 3 Investigation on helium ion beam lithography with proximity effect correction 27 3.1 Introduction 27 3.2 Simulation Approach 29 3.2.1 Process Model for Patterning Prediction 30 3.2.2 Feedback Compensation for Pattern Modulation 35 3.2.3 Evaluation of the Correction Results 37 3.3 Results and Discussion 38 3.4 Summary 46 Chapter 4 Precision Fabrication of EUVL Programmed Defects with Helium Ion Beam Patterning 47 4.1 Introduction 48 4.2 Simulation and Experimental Approach 51 4.2.1 HIB Direct Milling Experimental Condition 51 4.2.2 HIB Direct-Write Lithography Simulation Method 55 4.3 Results and Discussion 59 4.3.1 HIB Direct Milling Performance Test Utilizing Box Patterns 59 4.3.2 6T-SRAM Gate Layer Patterns with Programmed Defects Fabricated by HIB Direct Milling 61 4.3.3 Bump-Type Substrate Programmed Defects Fabricated by HIB Direct Milling 64 4.3.4 6T-SRAM Gate Layer Patterns with Programmed Defects by HIB Direct-Write Lithography Simulation 65 4.4 Summary 67 Chapter 5 Conclusion and Outlook 69 Bibliography 71 | |
| dc.language.iso | en | |
| dc.subject | 鄰近效應建模 | zh_TW |
| dc.subject | 氦離子束微影 | zh_TW |
| dc.subject | 設計缺陷製造 | zh_TW |
| dc.subject | 鄰近效應修正 | zh_TW |
| dc.subject | 氦離子束直接銑削 | zh_TW |
| dc.subject | programmed defects fabrication | en |
| dc.subject | helium ion beam lithography | en |
| dc.subject | helium ion beam direct milling | en |
| dc.subject | proximity effect modeling | en |
| dc.subject | proximity effect correction | en |
| dc.title | 應用於前瞻奈米製造之氦離子束製像及鄰近效應模型建立與修正方法 | zh_TW |
| dc.title | Modeling and Correction Methods for Helium-Ion-Beam Patterning and Proximity Effect with Applications in Advanced Nanofabrication | en |
| dc.date.schoolyear | 109-2 | |
| dc.description.degree | 博士 | |
| dc.contributor.oralexamcommittee | 李佳翰(Hsin-Tsai Liu),王倫(Chih-Yang Tseng),林俊宏,劉俊宏,李昭德,鄭文豪 | |
| dc.subject.keyword | 氦離子束微影,氦離子束直接銑削,鄰近效應建模,鄰近效應修正,設計缺陷製造, | zh_TW |
| dc.subject.keyword | helium ion beam lithography,helium ion beam direct milling,proximity effect modeling,proximity effect correction,programmed defects fabrication, | en |
| dc.relation.page | 82 | |
| dc.identifier.doi | 10.6342/NTU202104179 | |
| dc.rights.note | 未授權 | |
| dc.date.accepted | 2021-10-29 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
| dc.date.embargo-lift | 2026-10-28 | - |
| 顯示於系所單位： | 電子工程學研究所 | |
文件中的檔案：
| 檔案 | 大小 | 格式 | |
|---|---|---|---|
| U0001-2510202120341600.pdf 未授權公開取用 | 6.14 MB | Adobe PDF | 檢視/開啟 |
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