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請用此 Handle URI 來引用此文件: http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/82021
完整後設資料紀錄
DC 欄位值語言
dc.contributor.advisor李尉彰(Wei-Chang Li)
dc.contributor.authorYun Yien
dc.contributor.author易昀zh_TW
dc.date.accessioned2022-11-25T05:34:13Z-
dc.date.available2026-07-30
dc.date.copyright2021-08-18
dc.date.issued2021
dc.date.submitted2021-07-30
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Chen, 'Low voltage actuated RF micromechanical switches fabricated using CMOS-MEMS technique,' Microsystem Technologies, vol. 12, no. 12, pp. 1143-1151, 2006/10/01 2006, doi: 10.1007/s00542-006-0243-7. [16] M. Li Ya, A. Nordin, and N. Soin, 'A novel design of a low-voltage low-loss T-match RF-MEMS capacitive switch,' Microsystem Technologies, vol. 24, 01/01 2018, doi: 10.1007/s00542-017-3577-4. [17] J.-M. Kim, S. Lee, J.-H. Park, C.-W. Baek, Y. Kwon, and Y.-K. Kim, 'Electrostatically driven low-voltage micromechanical RF switches using robust single-crystal silicon actuators,' Journal of Micromechanics and Microengineering, vol. 20, no. 9, p. 095007, 2010/08/05 2010, doi: 10.1088/0960-1317/20/9/095007. [18] A. Gopalan and U. K. Kommuri, 'Design and development of miniaturized low voltage triangular RF MEMS switch for phased array application,' Applied Surface Science, vol. 449, pp. 340-345, 2018/08/15/ 2018, doi: https://doi.org/10.1016/j.apsusc.2018.02.210. [19] S. Shekhar, K. J. Vinoy, and G. K. Ananthasuresh, 'Low-voltage high-reliability MEMS switch for millimeter wave 5G applications,' Journal of Micromechanics and Microengineering, vol. 28, no. 7, p. 075012, 2018/04/25 2018, doi: 10.1088/1361-6439/aaba3e. [20] E. Abbaspour and S. Afrang, 'A Low Voltage Mems Structure for RF Capacitive Switches,' Progress in Electromagnetics Research-pier - PROG ELECTROMAGN RES, vol. 65, pp. 157-167, 01/01 2006, doi: 10.2528/PIER06093001. [21] D. Peroulis, S. P. Pacheco, and L. P. B. Katehi, 'RF MEMS switches with enhanced power-handling capabilities,' IEEE Transactions on Microwave Theory and Techniques, vol. 52, no. 1, pp. 59-68, 2004, doi: 10.1109/TMTT.2003.821234. [22] D. Yamane, W. Sun, H. Seita, S. Kawasaki, H. Fujita, and H. Toshiyoshi, 'A Ku-band Dual-SPDT RF-MEMS Switch by Double-Side SOI Bulk Micromachining,' Journal of Microelectromechanical Systems, vol. 20, no. 5, pp. 1211-1221, 2011, doi: 10.1109/JMEMS.2011.2162490. [23] D. Peroulis, S. P. Pacheco, K. 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T. Nguyen, 'Zero quiescent power VLF mechanical communication receiver,' in 2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS), 21-25 June 2015 2015, pp. 129-132, doi: 10.1109/TRANSDUCERS.2015.7180878. [28] L. Hung and C. Nguyen, 'Capacitive-piezoelectric AlN resonators with Q>12,000,' 2011 IEEE 24th International Conference on Micro Electro Mechanical Systems, pp. 173-176, 2011. [29] B. Dharmadhikari, S. H. Patel, and T. Sobh, 'Stiction Fault in MEMS Comb Drive Resonator,' in 2020 15th IEEE Conference on Industrial Electronics and Applications (ICIEA), 9-13 Nov. 2020 2020, pp. 888-892, doi: 10.1109/ICIEA48937.2020.9248114. [30] R. P. Hennessy, A. Basu, G. G. Adams, and N. E. McGruer, 'Hot-switched lifetime and damage characteristics of MEMS switch contacts,' Journal of Micromechanics and Microengineering, vol. 23, no. 5, p. 055003, 2013/03/21 2013, doi: 10.1088/0960-1317/23/5/055003. [31] A. Basu, R. P. Hennessy, G. G. Adams, and N. E. McGruer, 'Hot switching damage mechanisms in MEMS contacts—evidence and understanding,' Journal of Micromechanics and Microengineering, vol. 24, no. 10, p. 105004, 2014/09/01 2014, doi: 10.1088/0960-1317/24/10/105004. [32] W.-b. Ren, N. Jiang, C. Chang, S. Xue, Y. Chen, and J. R. Coutu, 'Observation and Understanding of the Initial Unstable Electrical Contact Behaviors,' IEEE Transactions on Components, Packaging and Manufacturing Technology, vol. PP, pp. 1-8, 05/10 2017, doi: 10.1109/TCPMT.2017.2695800. [33] L. Mercado, S.-M. Koo, T.-Y. Lee, and L. Liu, A mechanical approach to overcome RF MEMS switch stiction problem. 2003, pp. 377-384. [34] D. Bansal and A. Bajpai, 'Design and fabrication of a reduced stiction radio frequency MEMS switch,' Journal of Micro/ Nanolithography, MEMS, and MOEMS, vol. 14, p. 035002, 09/03 2015, doi: 10.1117/1.JMM.14.3.035002. [35] I. V. Uvarov, V. V. Naumov, O. M. Koroleva, and I. I. Amirov, 'MEMS switch with the active contact breaking mechanism,' Journal of Physics: Conference Series, vol. 643, p. 012091, 2015/11/02 2015, doi: 10.1088/1742-6596/643/1/012091. [36] T. Kageyama, K. Shinozaki, L. Zhang, J. Lu, H. Takaki, and S.-S. Lee, 'Fabrication of an Au–Au/carbon nanotube-composite contacts RF-MEMS switch,' Micro and Nano Systems Letters, vol. 6, no. 1, p. 6, 2018/11/07 2018, doi: 10.1186/s40486-018-0068-z. [37] P. Deng, N. Wang, F. Cai, and L. Chen, 'A high-force and high isolation metal-contact RF MEMS switch,' Microsystem Technologies, vol. 23, 10/01 2017, doi: 10.1007/s00542-017-3302-3. [38] V. Mulloni, B. Margesin, P. Farinelli, R. Marcelli, A. Lucibello, and G. De Angelis, 'Cycling reliability of RF-MEMS switches with Gold–Platinum multilayers as contact material,' Microsystem Technologies, vol. 23, no. 9, pp. 3843-3850, 2017/09/01 2017, doi: 10.1007/s00542-015-2782-2. [39] V. Sawant, S. Mohite, and L. 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dc.identifier.urihttp://tdr.lib.ntu.edu.tw/jspui/handle/123456789/82021-
dc.description.abstract微機電元件結合機械與電子元件,擁有多種幾何形狀結構設計,及仍能維持電性特徵的獨特功能,在市場中獨具優勢。當中,射頻元件適用於移動通訊產品內,非常具有發展潛能。其中,針對射頻開關元件,藉由其大幅改善能源損耗、低介入損失及隔絕性較佳的表現,相較電子式開關有其優勢。而共振式開關更藉由共振放大位移原理,相較傳統開關,藉由期較小的驅動電壓與較大的位移,提供射頻開關一有效提高壽命之設計,加大其元件優勢。然而,共振式元件受到半導體平面製程的限制,仍未克服可靠度問題,而近期研究亦尚未有一完善解決方法。 故本論文透過絕緣體上覆矽晶圓製程,設計雙穩態彎曲樑設計之輸出電極,以設計雙穩態彎曲樑在第一穩態中,克服微影及蝕刻製程之線寬限制。在結構釋放後,驅動雙穩態彎曲樑進入第二穩態中,完成一可成功縮小輸出電極與摺疊樑梳狀共振器之間隙距離,並降低進入碰撞操作模式之驅動電壓的共振器。此外,亦建立一數學模型,由量測結果反推得元件電性上之相應參數,以及輸出電極與共振器之間隙距離與摺疊樑梳狀共振器之梳狀結構間隙等結構特徵。藉由此模型,可在非破壞式量測下得到元件之特性。 經由實驗驗證,本論文設計之共振開關,可以有效減少26%間隙距離,並降低44%驅動電壓,以提升共振開關之靈敏度。而數學模型的精確度亦透過掃描式電子顯微鏡量測,驗證此結構之間隙可透過雙穩態彎曲樑有效減少。zh_TW
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dc.description.tableofcontents誌謝 i 中文摘要 ii Abstract iii 目錄 iv 圖目錄 vi 表目錄 xi 第一章 前言 1 1-1 研究背景與趨勢 1 1-2 文獻回顧 6 1-2-1 微機電共振器設計與微機電共振式開關 6 1-2-2 熱切換問題 15 1-2-3 微機電雙穩態系統設計與應用 19 1-3 研究動機 21 第二章 元件設計、模型與模擬 22 2-1 微機電共振式開關運作原理 22 2-2 微機電共振式開關數學模型建立與元件設計 22 2-2-1 梳狀電極之靜電驅動力 23 2-2-2 摺疊樑梳狀共振器之質量彈簧阻尼系統 25 2-3 雙穩態彎曲樑數學模型建立與元件設計 32 2-3-1 雙穩態機制簡介 32 2-3-2 彎曲樑數學模型 34 2-4 有限元素法模擬及應證 43 第三章 微機電共振式開關元件製程 46 3-1 絕緣體上覆矽晶圓元件開發 46 3-2 元件設計 46 3-2-1 摺疊樑梳狀共振器 46 3-2-2 輸出電極 49 3-3 元件製程 51 3-3-1 第一道黃光微影製程與零層對準圖案蝕刻 51 3-3-2 第二道黃光微影製程與電極金屬蒸鍍 59 3-3-3 第三道黃光微影製程(結構層圖形)與電感耦合離子深蝕刻 62 3-3-4 晶圓切割與結構層釋放 65 第四章 量測結果與討論 68 4-1 頻譜響應量測 68 4-1-1 等效電阻與電容量測 74 4-2 模型擬合 77 4-3 一般輸出電極與摺疊樑梳狀共振式開關測試與分析 78 4-3-1 等效電阻電容與電感模型驗證 79 4-4 彎曲樑設計輸出電極結構測試與比較 85 4-5 量測結果與比較 92 第五章 結論與未來展望 94 5-1 熱切換操作可能性之評估 94 5-2 元件使用壽命之探討 97 參考文獻 99 附錄A: 絕緣體上覆矽晶圓摺疊樑梳狀共振式開關製程大綱 104
dc.language.isozh-TW
dc.subject摺疊樑梳狀共振器zh_TW
dc.subject間隙窄化zh_TW
dc.subject雙穩態zh_TW
dc.subjectGap narrowingen
dc.subjectComb-drive resonatoren
dc.subjectBistableen
dc.title微機械電容式碰撞共振器傳感結構間隙窄化技術zh_TW
dc.titleGap Narrowing for Capacitively-Transduced Micromechanical Vibro-Impact Resonatorsen
dc.date.schoolyear109-2
dc.description.degree碩士
dc.contributor.oralexamcommittee胡毓忠(Hsin-Tsai Liu),蔡燿全(Chih-Yang Tseng),張培仁
dc.subject.keyword間隙窄化,雙穩態,摺疊樑梳狀共振器,zh_TW
dc.subject.keywordGap narrowing,Bistable,Comb-drive resonator,en
dc.relation.page108
dc.identifier.doi10.6342/NTU202101925
dc.rights.note同意授權(限校園內公開)
dc.date.accepted2021-08-02
dc.contributor.author-college工學院zh_TW
dc.contributor.author-dept應用力學研究所zh_TW
dc.date.embargo-lift2026-07-30-
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