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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 楊志忠(Chih-Chung Yang) | |
| dc.contributor.author | Ting-Chun Huang | en |
| dc.contributor.author | 黃亭鈞 | zh_TW |
| dc.date.accessioned | 2022-11-24T03:38:17Z | - |
| dc.date.available | 2021-08-06 | |
| dc.date.available | 2022-11-24T03:38:17Z | - |
| dc.date.copyright | 2021-08-06 | |
| dc.date.issued | 2021 | |
| dc.date.submitted | 2021-07-28 | |
| dc.identifier.citation | Kneissl M, Kolbe T, Chua C, Kueller V, Lobo N, Stellmach J, Knauer A, Rodriguez H, Einfeldt S and Yang Z 2011 Advances in group III-nitride-based deep UV light-emitting diode technology Semicond. Sci. Technol. 26 014036 Kent T F, Carnevale S D, Sarwar A T M, Phillips P J, Klie R F and Myers R C 2014 Deep ultraviolet emitting polarization induced nanowire light emitting diodes with AlxGa1-xN active regions Nanotechnology 25 455201 Shatalov M, Sun W, Lunev A, Hu X, Dobrinsky A, Bilenko Y, Yang J, Shur M, Gaska R, Moe C, Garrett G and Wraback M 2012 AlGaN deep-ultraviolet light-emitting diodes with external quantum efficiency above 10% Appl. Phys. Express 5 082101 Takano T, Mino T, Sakai J, Noguchi N, Tsubaki K and Hirayama H 2017 Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency Appl. Phys. Express 10 031002 Hirayama H, Tsukada Y, Maeda T and Kamata N 2010 Marked enhancement in the efficiency of deep-ultraviolet AlGaN light-emitting diodes by using a multiquantum-barrier electron blocking layer Appl. Phys. Express 3 031002 Simon J, Protasenko V, Lian C, Xing H and Jena D 2010 Polarization-induced hole doping in wide-Band-gap uniaxial semiconductor heterostructures Science 327 60 Li S, Ware M E, Kunets V P, Hawkridge M, Minor P, Wu J and Salamo G J 2011 Polarization induced doping in graded AlGaN films Phys. Status Solidi C 8 2182-4 Li S, Ware M, Wu J, Minor P, Wang Z, Jiang Y and Salamo G J 2012 Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN Appl. Phys. Lett. 101 122103 Li S, Zhang T, Wu J, Yang Y, Wang Z, Wu Z, Chen Z and Jiang Y 2013 Polarization induced hole doping in graded AlxGa1-xN (x=0.7~1) layer grown by molecular beam epitaxy Appl. Phys. Lett. 102 062108 Lytvyn P M, Kuchuk A V, Mazur Y I, Li C, Ware M E, Wang Z M, Kladko V P, Belyaev A E and Salamo G J 2018 Polarization effects in graded AlGaN nanolayers revealed by current-sensing and Kelvin probe microscopy ACS Appl. Mater. Interfaces 10 6755-63 Ambacher O, Foutz B, Smart J, Shealy J R, Weimann N G, Chu K, Murphy M, Sierakowski A J, Schaff W J, Eastman L F, Dimitrov R, Mitchell A, Stutzmann M 2000 Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures J. Appl. Phys. 87, 334-44 Einfeldt S, Kirchner V, Heinke H, Dießelberg M, Figge S, Vogeler K, Hommel D 2000 Strain relaxation in AlGaN under tensile plane stress J. Appl. Phys. 88, 7029-36 J.-M. Bethoux, P. Vennéguès, F. Natali, E. Feltin, O. Tottereau, G. Nataf, P. De Mierry and F. Semond 2003 Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks J. Appl. Phys. 94, 6499-507 Yasuda T, Takeuchi T, Iwaya M, Kamiyama S, Akasaki I, Hiroshi Amano H 2017 Relationship between lattice relaxation and electrical properties in polarization doping of graded AlGaN with high AlN mole fraction on AlGaN template Appl. Phys. Express 10, 025502 | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/81243 | - |
| dc.description.abstract | 我們首先在氮化鎵模板上生長一系列厚度170nm均勻鋁濃度氮化鋁鎵樣品，透過倒晶格空間的量測我們得知當鋁濃度大於45%時其所受伸張應力開始釋放。為了瞭解氮化鎵模板上氮化鋁鎵的應變行為與其對鋁成份漸變氮化鋁鎵內極化感應產生的p-型性能之影響，我們在氮化鎵模板上生長鋁成份漸變氮化鋁鎵之前先生長一層均勻高鋁濃度氮化鋁鎵夾層，我們改變這夾層之厚度來比較其結果。由實驗結果得知，越厚的氮化鋁鎵夾層會減弱鋁成分漸變氮化鋁鎵層內所受的伸張應力並減少其極化場的梯度，進而導致其電洞濃度降低，此外我們也比較相同鋁濃度漸變梯度但不同鋁濃度漸變範圍之樣品，我們發現平均鋁濃度越高，其伸張應力釋放越多，導致其電洞濃度會越高。這種應力釋放的效應能有效的抑制電洞濃度隨著鋁濃度上升而下降的趨勢，平均鋁濃度大於45%時，電洞濃度呈現增加的趨勢，當樣品內有均勻鋁濃度氮化鋁鎵夾層時，這種抑制效果會變弱。 | zh_TW |
| dc.description.provenance | Made available in DSpace on 2022-11-24T03:38:17Z (GMT). No. of bitstreams: 1 U0001-2807202112244200.pdf: 4675917 bytes, checksum: 90b832bee5c24bdfe040dcb49c1fe111 (MD5) Previous issue date: 2021 | en |
| dc.description.tableofcontents | 誌謝…………………………………………………………….……………………………………………………………… i 中文摘要………………………..………………………………………………………………………………………… ii Abstract…………………………………………………………………………………………………………………… iii Content……………………………………………………………………………………………………………………… iv List of figure……………………………………………………………………………………………………………… v List of table………………………………………………………………………………………………………………… viii Chapter 1 Introduction …………………………………………………………………………………… 1 1.1 Polarization-induced p-type AlGaN ……………………………………………………………………… 1 1.2 Strain in an AlGaN layer grown on a GaN template ……………………………………… 1 1.3 Strain effects on the polarization-induced p-type or n-type behavior …………………… 2 1.4 Research motivations …………………………………………………………………………………………… 5 1.5 Thesis structure ……………………………………………………………………………………………………… 6 Chapter 2 Sample Growth and Basic Analyses …………………………………………………………… 12 2.1 Sample structures ………………………………………… 12 2.2Growth conditions …………………………………………… 13 Chapter 3 Strain Conditions in AlGaN of Fixed Al Contents on GaN Template ……… 17 3.1 Strain relaxation behaviors ………………………………………………………………………………… 17 3.2 Surface conditions ………………………………………………………………………………………………… 18 Chapter 4 Effects of Strain on Polarization Induced p-type Behavior ………… 28 4.1 Basic analysis results …………………………………………………………………………………………… 28 4.2 Variations of p-type behavior ……………………………………………………………………………… 29 4.3 Discussions …………………………………………………………………………………………………………… 32 Chapter 5 Conclusions ………………………………………………………………………………………………… 52 References …………………………………………………………………………………………………………………… 53 | |
| dc.language.iso | en | |
| dc.subject | 氮化鋁鎵 | zh_TW |
| dc.subject | 鋁成分漸變氮化鋁鎵 | zh_TW |
| dc.subject | 極化感應 | zh_TW |
| dc.subject | AlGaN | en |
| dc.subject | Al-gradient AlGaN | en |
| dc.subject | polarization-induced | en |
| dc.title | 生長於氮化鎵模板上氮化鋁鎵的應變行為與其對鋁成份漸變氮化鋁鎵內極化感應產生的p-型性能之影響 | zh_TW |
| dc.title | Strain Behaviors of AlGaN Grown on GaN Templates and Their Effects on the Polarization-induced p-type Performance of Al-gradient AlGaN | en |
| dc.date.schoolyear | 109-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 黃建璋(Hsin-Tsai Liu),林浩雄(Chih-Yang Tseng),吳育任,林建中 | |
| dc.subject.keyword | 氮化鋁鎵,鋁成分漸變氮化鋁鎵,極化感應, | zh_TW |
| dc.subject.keyword | AlGaN,Al-gradient AlGaN,polarization-induced, | en |
| dc.relation.page | 54 | |
| dc.identifier.doi | 10.6342/NTU202101840 | |
| dc.rights.note | 同意授權(限校園內公開) | |
| dc.date.accepted | 2021-07-29 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
| 顯示於系所單位： | 光電工程學研究所 | |
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