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請用此 Handle URI 來引用此文件: http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/81238
完整後設資料紀錄
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dc.contributor.advisor陳俊維(Chun-Wei Chen)
dc.contributor.authorTing-Ran Liuen
dc.contributor.author劉庭綸zh_TW
dc.date.accessioned2022-11-24T03:38:01Z-
dc.date.available2022-02-21
dc.date.available2022-11-24T03:38:01Z-
dc.date.copyright2022-02-21
dc.date.issued2022
dc.date.submitted2022-01-24
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dc.identifier.urihttp://tdr.lib.ntu.edu.tw/jspui/handle/123456789/81238-
dc.description.abstract藍色能源維近年來眾所矚目的,新興可再生能源之一。藉由溶液間的濃度梯度,當堆疊具離子選擇性半透膜,即可釋放電化學位能,進而發電。 六方氮化硼於溶液中液化學吸附氫氧根離子,因此表面具高表面電荷密度。而帶高表面電荷材料會具高離子選擇性,使得其有良好的滲透能源發電功率。而二維材料的原子層厚度,使其有較低的電阻,亦可有更好的功率輸出。 本實驗利用化學氣相沉積法,製備大面積的單層氮化硼薄膜,藉由調控成長氣氛將六方氮化硼晶域尺寸提升三倍,從邊長3微米至邊長11微米。我們利用原子力顯微鏡、拉曼光譜儀、歐傑電子能普及穿透式電子顯微鏡,確保成長的六方氮化硼具高覆蓋率且為單原子層。進而利用高覆蓋率之單層六方氮化硼薄膜,於氮化矽視窗支撐膜上,結合氦離子束顯微鏡與穿透式電子顯微鏡,製備單一懸空二維奈米孔洞,作為滲透能發電裝置。而單一懸空六方氮化硼奈米孔洞裝置的滲透發電功率可達388 pW,與其他單孔結構相比,其輸出功率極高。 除此之外,本實驗所建立之懸空奈米孔洞製備方法,對於其他二維材料有高度相容性,可製備多種二維奈米孔洞。我們亦嘗試將具半導體特性之二維材料-二硫化鉬薄膜,整合至氮化矽視窗支撐膜。未來可進一步探討二維半導體材料中,自主閘控性質與電解液中離子傳輸行為。zh_TW
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dc.description.tableofcontents口試委員會審定書 # 誌謝 i 中文摘要 ii ABSTRACT iii CONTENTS iv LIST OF FIGURES viii Chapter 1 Introduction 1 Chapter 2 藍色能源 2 2.1 藍色能源主要機制 2 2.1.1 壓力延遲滲透 2 2.1.2 逆向電滲析 3 2.2 滲透能發電結構 5 2.2.1 固態奈米孔洞 5 2.2.2 奈米管 6 2.2.3 二維奈米孔洞 7 2.3 氮化硼於滲透能發電之應用可能性 10 2.4 奈米流體學重要概念 13 2.4.1 電雙層 13 2.4.2 帕松-波茲曼方程式 15 2.4.3 離子選擇性與電導 16 2.4.4 逆向電滲析熱力學推導 18 Chapter 3 六方氮化硼 20 3.1 六方氮化硼基本性質 20 3.1.1 六方氮化硼晶體結構 20 3.1.2 六方氮化硼物理性質 21 3.2 化學氣相沉積六方氮化硼 23 3.2.1 大面積單一晶域六方氮化硼 26 3.2.2 利用多晶金屬成長六方氮化硼 26 3.2.3 利用多晶金屬成長六方氮化硼 27 Chapter 4 實驗方法與分析儀器 30 4.1 懸空二維奈米孔洞滲透能發電裝置製備 30 4.1.1 氮化矽視窗支撐膜 30 4.1.2 利用氦離子束於氮化矽視窗製備孔洞 32 4.1.3 製備懸空二維材料奈米孔洞 33 4.2 滲透能發電元件量測 34 4.3 六方氮化硼薄膜 36 4.3.1 電解拋光多晶銅箔基板 36 4.3.2 六方氮化硼轉印 37 4.3.3 六方氮化硼成長 41 4.4 六方氮化硼薄膜鑑定與分析儀器 42 4.4.1 光學顯微鏡 42 4.4.2 拉曼光譜 43 4.4.3 原子力顯微鏡 45 4.4.4 掃描電子顯微鏡 46 4.4.5 歐傑電子能譜 47 4.4.6 穿透式電子顯微鏡 48 Chapter 5 結果與討論 52 5.1 六方氮化硼薄膜成長 52 5.1.1 硼烷氨前驅物重量控制 52 5.1.2 腔體氣氛控制 54 5.1.3 氧氣輔助化學氣相沉積法 57 5.2 六方氮化硼薄膜鑑定 58 5.3 單一六方氮化硼奈米孔洞滲透能發電 60 5.3.1 二維材料覆蓋性測試 60 5.3.2 單一六方氮化硼奈米孔洞結構 62 5.3.3 單一六方氮化硼奈米孔洞離子傳輸行為 63 5.3.4 單一六方氮化硼奈米孔洞滲透能轉換量測 64 5.4 六方氮化硼-氮化矽複合結構奈米孔洞矩陣 65 5.4.1 六方氮化硼-氮化矽複合結構奈米孔洞矩陣結構 65 5.4.2 六方氮化硼-氮化矽複合結構奈米孔洞矩陣滲透能轉換量測 66 5.5 其他二維材料之整合 67 5.5.1 單一二維奈米孔洞結構 67 5.5.2 單一二硫化鉬奈米孔洞滲透能轉換量測 68 5.6 單孔結構滲透能功率之比較 69 5.7 整合二維半導體材料閘控性質與離子傳輸行為 69 Chapter 6 結論與未來展望 72 REFERENCE 73
dc.language.isozh-TW
dc.subject二維奈米孔洞zh_TW
dc.subject逆向電滲析zh_TW
dc.subject單層六方氮化硼薄膜zh_TW
dc.subject化學氣相沉積法zh_TW
dc.subject滲透能發電zh_TW
dc.subjectmonolayer hexagonal boron nitride thin filmen
dc.subjectchemical vapor depositionen
dc.subjectosmotic power conversionen
dc.subjectreverse electrodialysisen
dc.subject2D nanoporeen
dc.title大面積二維氮化硼薄膜成長與其滲透能發電之應用zh_TW
dc.titleLarge-Area Growth Of 2D Hexagonal Boron Nitride Thin Film And Its Application For Osmotic Power Conversionen
dc.date.schoolyear110-1
dc.description.degree碩士
dc.contributor.oralexamcommittee温政彥(Hsyue-Jen Hsieh),葉禮賢(Tzu-Yang Hsien)
dc.subject.keyword滲透能發電,逆向電滲析,單層六方氮化硼薄膜,化學氣相沉積法,二維奈米孔洞,zh_TW
dc.subject.keywordosmotic power conversion,reverse electrodialysis,monolayer hexagonal boron nitride thin film,chemical vapor deposition,2D nanopore,en
dc.relation.page78
dc.identifier.doi10.6342/NTU202200165
dc.rights.note同意授權(限校園內公開)
dc.date.accepted2022-01-24
dc.contributor.author-college工學院zh_TW
dc.contributor.author-dept材料科學與工程學研究所zh_TW
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