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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/81059完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 薛景中(Jing-Jong Shyue) | |
| dc.contributor.author | Peng-Hsuan Chiang | en |
| dc.contributor.author | 江芃萱 | zh_TW |
| dc.date.accessioned | 2022-11-24T03:28:31Z | - |
| dc.date.available | 2021-08-25 | |
| dc.date.available | 2022-11-24T03:28:31Z | - |
| dc.date.copyright | 2021-08-25 | |
| dc.date.issued | 2021 | |
| dc.date.submitted | 2021-08-23 | |
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/81059 | - |
| dc.description.abstract | "有機金屬框架 (Metal-Organic-Framework, MOF) 基於其高比表面積、結構中可調控的孔洞大小與官能基團，使其成為功能性極強的孔洞材料、被廣泛應用。而倘若能對客體分子於MOF結構間的擴散、空間分佈等相互關係有更進一步地認識，將有助於其於各領域中的應用與發展。不過，如今能夠直接分析客體—MOF複合結構內成份分佈的分析方法卻極為缺少。 二次離子質譜儀 (Secondary Ion Mass Spectroscopy, SIMS) 具有足夠的空間解析度與極高的偵測靈敏度(至少達ppm等級)，是全面性地提供樣品成份與分佈之相關資訊的絕佳工具。然而，以其進行縱深分析時，高劑量離子入射將導致分析物結構損傷進而使分子訊號強度下降，且對於有機—無機成份混雜的MOFs來說，入射離子造成的影響將更為複雜。因此，本研究旨在透過不同離子束、加速電壓、電流等參數的調整，設計出一系列實驗參數對MOF縱深分析結果進行探討，企圖找出能完整保留MOF結構中有機與無機成份訊號的實驗參數，以為MOFs建立一個直接、完整且有效的縱深分析方式，作為往後這類材料的分析方針。 本研究以化性穩定且發展成熟之UiO-66作為建構MOF薄膜縱深分析的平台，利用飛行時間式二次離子質譜儀 (ToF- SIMS) 以脈衝C60+ 作為分析離子源、不同能量密度 (energy per atom, E/n = 2~20) 的氬簇離子團 (Ar-GCIB) 搭配相異加速電壓或電流密度之Ar+ 做為共濺射離子源進行縱深分析的探討。研究結果顯示，單純使用 Ar-GCIB時，隨著E/n降低，入射離子對樣品造成的損傷累積較少，UiO-66結構中有機成份的保留程度較為理想，不過因Ar-GCIB對無機成份的濺射率遠低於移除有機成份的速率，故出現明顯差異侵蝕的現象，最終樣品表面剩下大量無法移除的無機成份，導致縱深分析無法向下建構。而當配合Ar+ 進行共濺射時，能量較強的單原子離子確實有助於提高金屬節點的濺射率；其中，以使用高電壓高電流 (500 V, 5 ×10-6 A/cm2) 的 Ar +共濺射之結果最為理想，不但大幅提升整體材料移除速率，亦有效清除表面破壞之化學結構，維持MOF成份的均勻，最小化偽影現象。 總的來說，良好的MOF縱深分析需利用共濺射的方式，以低能量Ar-GCIB (E/n=4) 保留有機成份訊號，並由高電壓—高電流的 Ar + 提高無機成份的濺射率，兩者各司其職，以於有限時間內替MOF樣品建構出真實而完整的成份分佈。" | zh_TW |
| dc.description.provenance | Made available in DSpace on 2022-11-24T03:28:31Z (GMT). No. of bitstreams: 1 U0001-2208202121563600.pdf: 7162415 bytes, checksum: 53e0cf20ae672c0f19df8c144b10f5b0 (MD5) Previous issue date: 2021 | en |
| dc.description.tableofcontents | "誌謝 i 中文摘要 ii ABSTRACT iv 目錄 vi 圖目錄 ix 表目錄 xiii 第一章 緒論 1 第二章 文獻回顧 4 2.1 有機金屬框架 (Metal-Organic Framework) 4 2.1.1 有機金屬框架簡介 4 2.1.2 現階段有機金屬框架與其客體之相關研究 9 2.2 二次離子質譜儀之原理與技術介紹 11 2.2.1 質譜法之簡介 11 2.2.2 二次離子質譜法 (Secondary Ion Mass Spectrometry, SIMS) 12 2.2.3 動態和靜態二次離子質譜儀 14 2.2.4 二次離子質譜儀之基本應用 15 2.2.5 縱深分布分析 (Depth Profile) 17 2.2.5.1 基本運作原理 17 2.2.5.2 損傷截面積 (Damage Cross Section) 19 2.2.5.3 濺射率 (Sputter Yield) 21 2.2.5.4 縱深分析常見之問題 23 2.2.6 單原子以及團簇離子源 25 2.2.6.1 單原子與簇原子離子源於二次離子質譜中之應用與演進 25 2.2.6.2 簇離子源之濺射機制 28 2.2.7 氣體簇離子源介紹 (Gas Cluster Ion Beam, GCIB) 31 2.2.7.1 氣體簇離子之產生 31 2.2.7.2 氣體簇離子源的特性與優勢 32 2.2.7.3 氣體簇離子源之能量密度 (Energy per Atom, E/n) 36 2.3 二次離子質譜儀應用於有機—無機複合材料 39 2.3.1.1 離子分析應用於有機—無機複合材料 39 2.3.1.2 UiO-66 簡介 44 第三章 實驗及儀器介紹 45 3.1 藥品與基材 45 3.2 實驗儀器與原理 45 3.2.1 X光繞射分析儀 (X-ray Diffractometer, XRD) 45 3.2.2 掃描式電子顯微鏡 (Scanning Electron Microscope, SEM) 46 3.2.3 原子力顯微鏡 (Atomic Force Microscope, AFM) 46 3.2.4 飛行式二次離子質譜儀 (Time of Flight Secondary Ion Mass Spectrometry, ToF-SIMS) 48 3.3 實驗流程 60 3.3.1 UiO-66之合成 60 3.3.2 試片製備 61 3.3.2.1 金基板的清洗 61 3.3.2.2 薄膜的製備 61 3.3.2.3 藥物的摻入 62 3.3.3 XRD分析 62 3.3.4 SEM觀測 62 3.3.5 AFM量測 63 3.3.6 ToF-SIMS分析 63 第四章 實驗結果與討論 65 4.1 UiO-66之XRD鑑定 65 4.2 UiO-66薄膜覆蓋率與截面觀測 66 4.3 UiO-66薄膜的表面起伏 68 4.4 ToF-SIMS量測 69 4.4.1 正負離子模式的選定與特徵破片的選擇 69 4.4.2 Ar1000,2500+ 能量密度對縱深分析之影響 73 4.4.3 以C60+ 單獨濺射之縱深分析 77 4.4.4 簇離子源 (C60+ 和 Ar1000,2500+) 與Ar+共濺射之結果 79 4.4.4.1 C60+—Ar+共濺射之縱深分析 80 4.4.4.2 Ar1000,2500+ 能量密度與Ar+共濺射對縱深分析之影響 83 4.4.5 Ar1000,2500+ 能量密度與Ar+共濺射對縱深分析影響之綜合比較 91 4.4.6 摻入藥物之 UiO-66 96 4.4.6.1 咖啡因特徵破片的選用 96 4.4.6.2 摻入咖啡因之UiO-66的縱深分析 99 第五章 結論 101 第六章 未來展望 102 第七章 參考資料 103" | |
| dc.language.iso | zh-TW | |
| dc.subject | 飛行時間式二次離子質譜儀 | zh_TW |
| dc.subject | Ar1000 | zh_TW |
| dc.subject | UiO-66 | zh_TW |
| dc.subject | 2500+ —Ar+共濺射 | zh_TW |
| dc.subject | 金屬有機框架 | zh_TW |
| dc.subject | 縱深分析 | zh_TW |
| dc.subject | UiO-66 | en |
| dc.subject | depth profile | en |
| dc.subject | 2500+ —Ar+ cosputtering | en |
| dc.subject | Ar1000 | en |
| dc.subject | time of flight secondary ion mass spectrometry (ToF-SIMS) | en |
| dc.subject | metal-organic framework (MOF) | en |
| dc.title | "氬簇離子團 (Ar1000,2500+) 能量密度與 Ar+ 共濺射對有機金屬框架薄膜二次離子質譜縱深分析之影響" | zh_TW |
| dc.title | "Effect of Energy per Atom (E/n) in Ar Gas Cluster Ion Beam (Ar1000,2500+) with Ar+ Cosputter on Depth Profile of Metal-Organic Framework Thin Film by Secondary Ion Mass Spectroscopy" | en |
| dc.date.schoolyear | 109-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 王榮輝 (Hsin-Tsai Liu),林煒淳(Chih-Yang Tseng) | |
| dc.subject.keyword | 金屬有機框架,UiO-66,飛行時間式二次離子質譜儀,Ar1000,2500+ —Ar+共濺射,縱深分析, | zh_TW |
| dc.subject.keyword | metal-organic framework (MOF),UiO-66,time of flight secondary ion mass spectrometry (ToF-SIMS),Ar1000,2500+ —Ar+ cosputtering,depth profile, | en |
| dc.relation.page | 111 | |
| dc.identifier.doi | 10.6342/NTU202102598 | |
| dc.rights.note | 同意授權(限校園內公開) | |
| dc.date.accepted | 2021-08-23 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 材料科學與工程學研究所 | zh_TW |
| 顯示於系所單位： | 材料科學與工程學系 | |
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