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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/80420完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 王暉(Huei Wang) | |
| dc.contributor.author | Kai-Chun Chang | en |
| dc.contributor.author | 張楷儁 | zh_TW |
| dc.date.accessioned | 2022-11-24T03:06:18Z | - |
| dc.date.available | 2022-01-17 | |
| dc.date.available | 2022-11-24T03:06:18Z | - |
| dc.date.copyright | 2022-01-17 | |
| dc.date.issued | 2022 | |
| dc.date.submitted | 2022-01-06 | |
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/80420 | - |
| dc.description.abstract | 本論文提出了三個部分。第一部分是應用於無線電天文接收機的寬頻低雜訊放大器，使用65奈米互補式金屬氧化物半導體(CMOS)製程來設計。第二部分是應用於下個世代的無線電天文接收機的K頻段極低功耗的低雜訊放大器，使用90奈米互補式金屬氧化物半導體製程來設計。最後一部分是應用於毫米波第五代行動通訊28和38 GHz頻段的低相位變化可變增益低雜訊放大器，也是使用90奈米互補式金屬氧化物半導體製程來設計。 在第一部分，提出了一個使用65奈米CMOS的高增益、寬頻、且高線性度的低雜訊放大器。此電路採用了共源級架構以實現高增益且低雜訊。為了增加頻寬，輸入與級間網路採用了兩段式匹配網路。量測結果顯示本文提出的低雜訊放大器在32 GHz的頻率下達到20.1 dB的小訊號增益和25.2 GHz的3-dB頻寬，頻寬內有3.6 dB的平均雜訊指數。此外，在18 mW的功耗下，此電路輸出功率的增益1dB壓縮點(OP1dB)達到2.2 dBm，晶片面積為0.4 mm2。 在第二部分，呈現了一個使用90奈米CMOS實現的K頻段極低功耗低雜訊放大器。此電路使用了電流再利用的技術來達到增益提高，單端中和技術也被應用在這個電路。此外，電晶體使用了基極浮接的技術以提高整體增益。量測結果顯示此低雜訊放大器在26 GHz的頻率下有19.3 dB的小訊號增益和且3-dB頻寬達到4.2 GHz。雜訊指數部分，在26 GHz的頻率下有3.3 dB的雜訊指數且頻帶內的雜訊指數皆小於4 dB，且功率消耗為1.8毫瓦。 最後一部分，提出了一個同樣使用90奈米CMOS實現的低相位變化且寬頻的可變增益低雜訊放大器。為了有效提高增益且降低雜訊，此電路採用了閘源極變壓器回授技術來同時達到阻抗和雜訊匹配。此外，為了有效提高穩定度且不犧牲增益，汲源極變壓器回授中和穩定技術(neutralization)也被應用在此電路。相位補償方面，利用兩級電流控制架構(current-steering)並在輸出端建構電感式相位反向網路，藉由相反的相位趨勢來達到相位的補償，使得相位變化盡可能地降低。量測結果顯示此可變增益低雜訊放大器在9.8 dB的增益控制範圍下相位變化小於7.2°，3-dB頻寬包含26~30.5和33.8~40.6 GHz，且最高增益為21.4 dB並在36 GHz達到4.7 dB的雜訊指數，功率消耗為17.9 mW。相較於先前已發表的CMOS低相位變化的可變增益放大器，此顆電路達到了最高的效能指標，顯示了在5G高效率通訊系統中發展的潛力。 | zh_TW |
| dc.description.provenance | Made available in DSpace on 2022-11-24T03:06:18Z (GMT). No. of bitstreams: 1 U0001-0301202222030600.pdf: 5384296 bytes, checksum: a2be4dac59d0950672c8217ea88eb87c (MD5) Previous issue date: 2022 | en |
| dc.description.tableofcontents | CONTENTS 口試委員會審定書 # 誌謝 i 中文摘要 ii ABSTRACT iv CONTENTS vi LIST OF FIGURES ix LIST OF TABLES xvii Chapter 1 Introduction 1 1.1 Background and Motivation 1 1.2 Literature Survey 3 1.2.1 Wideband Low Noise Amplifier 3 1.2.2 Ultra-low-power Low Noise Amplifier 6 1.2.3 Millimeter-wave Variable Gain Low Noise Amplifier with Low Phase Variation 8 1.3 Contributions 11 1.3.1 K/ Ka band LNA for Astronomical Observation of the Universe 11 1.3.2 K-band Ultra-low-power LNA for Next Generation Radio Astronomical Application 12 1.3.3 A Broadband Variable Gain Low Noise Amplifier Covering 28/38 GHz bands with Phase Compensation Technique for 5G Communications 12 1.4 Thesis Organization 14 Chapter 2 A 17.7 to 42.9-GHz Low Power Low Noise Amplifier with 83% Fractional Bandwidth for Radio Astronomical Receivers in 65-nm CMOS 15 2.1 Circuit Design 16 2.1.1 Circuit Architecture 16 2.1.2 Bandwidth Enhancement Technique and Matching Networks 22 2.1.3 Circuit Schematic and Post-Layout Results 29 2.2 Experimental Results 36 2.3 Summary 40 Chapter 3 Design of a 1.8-mW K-band Low Noise Amplifier with 19.3-dB Gain and 3.3-dB Noise Figure in 90-nm CMOS 42 3.1 Circuit Design 44 3.1.1 Biasing Selection and Device Selection 44 3.1.2 Quality Factor of Inductors 49 3.1.3 Body-floating and Current-Reused Technique 56 3.1.4 Gm-boosting and Neutralization Technique 62 3.1.5 Circuit Schematic and Simulation Result 70 3.2 Experimental Results 76 3.3 Summary 80 Chapter 4 A Broadband Variable Gain Low Noise Amplifier Covering 28/38 GHz bands with Low Phase Variation in 90-nm CMOS for 5G Communications 82 4.1 Design Concepts of Low Phase Variation 85 4.1.1 Phase Analysis of Current-steering Topology 85 4.1.2 Phase Analysis of Inductive phase-inversion Network 98 4.1.3 Phase Analysis of Combined Topology 103 4.2 Circuit Design 103 4.2.1 Circuit Architecture 103 4.2.2 Bias Selection and Device Selection 105 4.2.3 The Design of First Stage 108 4.2.4 The Design of Second Stage 113 4.2.5 Wideband Matching Design 117 4.2.6 Circuit Schematic and Post-layout simulations 120 4.3 Experimental Results 125 4.4 Summary 132 Chapter 5 Conclusion 135 REFERENCES 137 | |
| dc.language.iso | en | |
| dc.subject | 高速場效電晶體 | zh_TW |
| dc.subject | 互補式金屬氧化物半導體 | zh_TW |
| dc.subject | 低雜訊放大器 | zh_TW |
| dc.subject | 可變增益放大器 | zh_TW |
| dc.subject | 毫米波 | zh_TW |
| dc.subject | Low noise amplifier | en |
| dc.subject | Field-effect transistor | en |
| dc.subject | Millimeter-wave | en |
| dc.subject | Variable gain amplifier | en |
| dc.subject | CMOS | en |
| dc.title | 天文接收機之放大器和應用於5G通訊系統之可變增益低雜訊放大器的研究 | zh_TW |
| dc.title | Research of Amplifiers for Astronomical Receivers and Variable Gain Low Noise Amplifiers for 5G Mobile Communications | en |
| dc.date.schoolyear | 110-1 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 黃天偉(Hsin-Tsai Liu),章朝盛(Chih-Yang Tseng),蔡作敏,蔡政翰 | |
| dc.subject.keyword | 互補式金屬氧化物半導體,低雜訊放大器,可變增益放大器,毫米波,高速場效電晶體, | zh_TW |
| dc.subject.keyword | CMOS,Low noise amplifier,Variable gain amplifier,Millimeter-wave,Field-effect transistor, | en |
| dc.relation.page | 143 | |
| dc.identifier.doi | 10.6342/NTU202200003 | |
| dc.rights.note | 同意授權(限校園內公開) | |
| dc.date.accepted | 2022-01-07 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 電信工程學研究所 | zh_TW |
| 顯示於系所單位： | 電信工程學研究所 | |
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