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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/80365完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 陳俊維(Chun-Wei Chen) | |
| dc.contributor.author | Chien-Tai Cheng | en |
| dc.contributor.author | 鄭謙泰 | zh_TW |
| dc.date.accessioned | 2022-11-24T03:05:13Z | - |
| dc.date.available | 2026-06-14 | |
| dc.date.available | 2022-11-24T03:05:13Z | - |
| dc.date.copyright | 2021-07-23 | |
| dc.date.issued | 2021 | |
| dc.date.submitted | 2021-06-17 | |
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/80365 | - |
| dc.description.abstract | 六方氮化硼在許多領域中都是極具潛力的候選人，特別是介電層、保護性鍍膜或透明薄膜。在此實驗中，我們系統性地探討製程參數對於以低壓化學氣相沉積法成長六方氮化硼於多晶銅箔上的影響；包含前驅物的量、前驅物的加熱溫度、爐管溫度、氫氣流量於退火及成長階段等對於六方氮化硼成長的影響。低通式的化學氣相沉積製程可有效減少成長源氣氛進入爐管的量，使成核密度降低，且提升結晶性。於成長階段，氫氣流量大時，成長由氫氣的蝕刻效果主導；氫氣流量小時，成長則由氫氣的催化效果主導。於退火階段，越大的氫氣流量使得銅箔表面狀態越平整以減少異質成核點，有利於成長出典型地三角形的六方氮化硼晶域。我們也發現六方氮化硼適合作為光沉積白金的模板，其為高表面積的奈米粒子，不僅可以提供優良的產氫效率，且使入射光仍能進入矽基板被吸收以提供元件足夠的光電壓。以光電化學的量測，此元件的起始電位達0.131 V，飽和電流密度為27 mA/cm2。 | zh_TW |
| dc.description.provenance | Made available in DSpace on 2022-11-24T03:05:13Z (GMT). No. of bitstreams: 1 U0001-1006202117295700.pdf: 13487661 bytes, checksum: 0f360acbf2da60dfc4d03d334bf0ae22 (MD5) Previous issue date: 2021 | en |
| dc.description.tableofcontents | CONTENTS 口試委員會審定書 # 誌謝 i 中文摘要 ii ABSTRACT iii CONTENTS iv LIST OF FIGURES vii LIST OF TABLES xiv Chapter 1 研究動機 1 Chapter 2 六方氮化硼的性質及應用 2 2.1 晶體結構 2 2.2 物理性質 4 2.2.1 機械性質 4 2.2.2 熱傳性質 5 2.3 化學性質 6 2.4 應用 8 2.4.1 抗氧化鍍層 8 2.4.2 封裝材料 9 2.4.3 穿隧電流阻擋層 10 2.4.4 異質結構 11 Chapter 3 以化學氣相沉積法製備六方氮化硼 14 3.1 前驅物 14 3.2 以銅作為成長基板 16 3.2.1 六方氮化硼薄膜的層數控制 17 3.2.2 六方氮化硼晶域尺寸的提升 19 3.3 六方氮化硼 19 3.3.1 成長機制 19 3.3.2 幾何形狀 21 3.4 成長的控制 22 3.4.1 銅基板 22 3.4.2 前驅物的進料速率 24 3.4.3 來自於前驅物的副產物 24 3.4.4 腔體壓力 25 Chapter 4 六方氮化硼的鑑定 27 4.1 光學對比 27 4.2 膜厚測量 28 4.2.1 高度輪廓 28 4.2.2 能隙寬度 29 4.2.3 拉曼光譜分析 30 4.3 元素分析 30 4.3.1 X射線電子能譜學 30 4.3.2 電子能量損失譜 31 4.4 結晶取向 33 4.4.1 晶域方向 33 4.4.2 電子繞射圖 34 Chapter 5 實驗與分析方法 35 5.1 實驗方法 35 5.1.1 基板前處理 35 5.1.2 化學氣相沉積製程－傳統式 36 5.1.3 化學氣相沉積製程－低通式 38 5.1.4 成長基板的氧化 40 5.1.5 六方氮化硼的轉印 40 5.2 六方氮化硼的分析與應用 41 5.2.1 光學顯微鏡 41 5.2.2 拉曼光譜儀 41 5.2.3 原子力顯微鏡 42 5.2.4 掃描式電子顯微鏡 43 5.2.5 歐傑電子能譜儀 43 5.2.6 穿透式電子顯微鏡 44 5.2.7 光沉積白金於六方氮化硼及其光電化學的量測 44 Chapter 6 結果與討論 45 6.1 化學氣相沉積製程－傳統式 45 6.2 化學氣相沉積製程－低通式 48 6.2.1 最佳化硼烷氨的重量及其加熱溫度 49 6.2.2 氫氣流量於成長階段的影響 53 6.2.3 氫氣流量於退火階段的影響 54 6.2.4 成長溫度的選擇 55 6.2.5 最佳的成長參數 56 6.2.6 應用 59 Chapter 7 結論與未來展望 63 REFERENCE 64 | |
| dc.language.iso | zh-TW | |
| dc.subject | 六方氮化硼 | zh_TW |
| dc.subject | 低通/低流量 | zh_TW |
| dc.subject | 化學氣相沉積法 | zh_TW |
| dc.subject | 光沉積白金 | zh_TW |
| dc.subject | 光電化學 | zh_TW |
| dc.subject | 產氫反應 | zh_TW |
| dc.subject | hydrogen evolution reaction (HER) | en |
| dc.subject | hexagonal boron nitride (h-BN) | en |
| dc.subject | low-pass | en |
| dc.subject | low pressure chemical vapor deposition (LPCVD) | en |
| dc.subject | photo-deposited platinum (Pt) | en |
| dc.subject | photo-electrochemistry (PEC) | en |
| dc.title | 以化學氣相沉積法成長六方氮化硼於多晶銅箔上 | zh_TW |
| dc.title | Growth of Hexagonal Boron Nitride on Polycrystalline Copper Foil via Chemical Vapor Deposition | en |
| dc.date.schoolyear | 109-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.coadvisor | 溫政彥(Cheng-Yen Wen) | |
| dc.contributor.oralexamcommittee | 張文豪(Hsin-Tsai Liu),何清華(Chih-Yang Tseng) | |
| dc.subject.keyword | 六方氮化硼,低通/低流量,化學氣相沉積法,光沉積白金,光電化學,產氫反應, | zh_TW |
| dc.subject.keyword | hexagonal boron nitride (h-BN),low-pass,low pressure chemical vapor deposition (LPCVD),photo-deposited platinum (Pt),photo-electrochemistry (PEC),hydrogen evolution reaction (HER), | en |
| dc.relation.page | 71 | |
| dc.identifier.doi | 10.6342/NTU202100991 | |
| dc.rights.note | 同意授權(限校園內公開) | |
| dc.date.accepted | 2021-06-17 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 材料科學與工程學研究所 | zh_TW |
| dc.date.embargo-lift | 2026-06-14 | - |
| 顯示於系所單位： | 材料科學與工程學系 | |
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