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| ???org.dspace.app.webui.jsptag.ItemTag.dcfield??? | Value | Language |
|---|---|---|
| dc.contributor.advisor | 黃建璋(Jian-Jang Huang) | |
| dc.contributor.author | Jhih-Yuan Yang | en |
| dc.contributor.author | 楊智淵 | zh_TW |
| dc.date.accessioned | 2022-11-23T09:19:35Z | - |
| dc.date.available | 2022-02-21 | |
| dc.date.available | 2022-11-23T09:19:35Z | - |
| dc.date.copyright | 2022-02-21 | |
| dc.date.issued | 2022 | |
| dc.date.submitted | 2022-01-26 | |
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Pribble, 'A review of GaN on SiC high electron-mobility power transistors and MMICs,' IEEE Transactions on Microwave Theory and Techniques, vol. 60, no. 6, pp. 1764-1783, 2012. E. M. Chumbes et al., 'AlGaN/GaN high electron mobility transistors on Si (111) substrates,' IEEE Transactions on electron devices, vol. 48, no. 3, pp. 420-426, 2001. T. T. Luong et al., 'RF loss mechanisms in GaN‐based high‐electron‐mobility‐transistor on silicon: Role of an inversion channel at the AlN/Si interface,' Physica status solidi (a), vol. 214, no. 7, p. 1600944, 2017. D. Marti, C. R. Bolognesi, Y. Cordier, M. Chmielowska, and M. Ramdani, 'RF performance of AlGaN/GaN high-electron-mobility transistors grown on silicon (110),' Applied physics express, vol. 4, no. 6, p. 064105, 2011. A. Minko et al., 'High microwave and noise performance of 0.17-μm AlGaN-GaN HEMTs on high-resistivity silicon substrates,' IEEE Electron Device Letters, vol. 25, no. 4, pp. 167-169, 2004. H. Chandrasekar et al., 'Quantifying temperature-dependent substrate loss in GaN-on-Si RF technology,' IEEE Transactions on Electron Devices, vol. 66, no. 4, pp. 1681-1687, 2019. S. Hoshi et al., '12.88 W/mm GaN high electron mobility transistor on silicon substrate for high voltage operation,' Applied Physics Express, vol. 2, no. 6, p. 061001, 2009. Y.-Y. Wong et al., 'Growth and fabrication of AlGaN/GaN HEMT on SiC substrate,' in 2012 10th IEEE International Conference on Semiconductor Electronics (ICSE), 2012: IEEE, pp. 729-732. F. Roccaforte, G. Greco, P. Fiorenza, and F. Iucolano, 'An overview of normally-off GaN-based high electron mobility transistors,' Materials, vol. 12, no. 10, p. 1599, 2019. Y. Cai, Y. Zhou, K. J. Chen, and K. M. Lau, 'High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment,' IEEE Electron Device Letters, vol. 26, no. 7, pp. 435-437, 2005. W. Choi, O. Seok, H. Ryu, H.-Y. Cha, and K.-S. Seo, 'High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-${\rm SiN} _ {x} $/RF-Sputtered-${\rm HfO} _ {2} $,' IEEE Electron Device Letters, vol. 35, no. 2, pp. 175-177, 2013. G. Greco, F. Iucolano, and F. Roccaforte, 'Review of technology for normally-off HEMTs with p-GaN gate,' Materials Science in Semiconductor Processing, vol. 78, pp. 96-106, 2018. K. Benaissa, J. Yang, D. Crenshaw, B. Williams, and S. Sridhar, '$0.1 mu m $ RFCMOS on High Resistivity Substrates for System on Chip (SOC) Applications,' in Electron Devices Meeting, 2002, pp. 667-670. K. Benaissa et al., 'RF CMOS on high-resistivity substrates for system-on-chip applications,' IEEE Transactions on Electron Devices, vol. 50, no. 3, pp. 567-576, 2003. M. Pfost, H.-M. Rein, and T. Holzwarth, 'Modeling substrate effects in the design of high-speed Si-bipolar ICs,' IEEE Journal of Solid-State Circuits, vol. 31, no. 10, pp. 1493-1501, 1996. R. Y. Yang, C. Y. Hung, Y. K. Su, M. H. Weng, and H. W. Wu, 'Loss characteristics of silicon substrate with different resistivities,' Microwave and Optical Technology Letters, vol. 48, no. 9, pp. 1773-1776, 2006. S. B. Driad et al., 'AlGaN/GaN HEMTs on silicon substrate with 206 GHz FMAX,' IEEE Electron Device Letters, vol. 34, no. 1, pp. 36-38, 2013. D. Ducatteau et al., 'Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate,' IEEE Electron Device Letters, vol. 27, no. 1, pp. 7-9, 2005. J. Das, W. Ruythooren, R. Vandersmissen, J. Derluyn, M. Germain, and G. Borghs, 'Substrate removal of AlGaN/GaN HEMTs using laser lift‐off,' physica status solidi (c), vol. 2, no. 7, pp. 2655-2658, 2005. P. Srivastava et al., 'Silicon substrate removal of GaN DHFETs for enhanced (< 1100 V) breakdown voltage,' IEEE Electron Device Letters, vol. 31, no. 8, pp. 851-853, 2010. P. Srivastava et al., 'Si trench around drain (STAD) technology of GaN-DHFETs on Si substrate for boosting power performance,' in 2011 International Electron Devices Meeting, 2011: IEEE, pp. 19.6. 1-19.6. 4. Z. J. Shen, Y. Xiong, X. Cheng, Y. Fu, and P. Kumar, 'Power MOSFET Switching Loss Analysis: A New Insight,' in Conference Record of the 2006 IEEE Industry Applications Conference Forty-First IAS Annual Meeting, 8-12 Oct. 2006 2006, vol. 3, pp. 1438-1442. W. Saito et al., 'Suppression of Dynamic On-Resistance Increase and Gate Charge Measurements in High-Voltage GaN-HEMTs With Optimized Field-Plate Structure,' IEEE Transactions on Electron Devices, vol. 54, no. 8, pp. 1825-1830, 2007. J. Brown, 'Power MOSFET basics: Understanding gate charge and using it to assess switching performance,' Vishay Siliconix, AN608, vol. 153, 2004. V. Krishnamurthy, A. Gyure, and P. Francis, 'Simple gate charge (Qg) measurement technique for on-wafer statistical monitoring and modeling of power semiconductor devices,' in 2012 IEEE International Conference on Microelectronic Test Structures, 2012: IEEE, pp. 98-100. | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/79982 | - |
| dc.description.abstract | 隨著半導體技術發展，元件需要操作於更高的電壓以及頻率下，其中III-V族材料氮化鎵被視為極具潛力的新世代半導體材料。氮化鎵擁有高崩潰電壓及高電子遷移率的特性，和能夠操作於高壓及高頻條件下。而氮化鋁鎵/氮化鎵高電子遷移率電晶體中，在氮化鋁鎵/氮化鎵異質接面處形成的高濃度二維電子氣，提供了低阻抗的電流通道。本論文將探討小閘極長度之氮化鎵高電子遷移率電晶體製程方法，以及其電流特性的理論模型。 在第二章中，我們首先做出了傳統氮化鋁鎵/氮化鎵高電子遷移率電晶體並探討移除矽基板之後的特性。移除矽基板後，直流特性沒顯著的改變，但藉由移除矽基板產生的漏電流路徑及其他高頻寄生元件效應，能有效的改善元件的高頻特性。而選擇性移除矽基板時，發現移除閘極與汲極間的矽基板效果大於閘極與源極間的，原因是由於具有高電壓之汲極與基板間會產生更多感應電荷，對於元件高頻表現影響較大。此研究提供了一有效且低成本的方式提升元件在低阻值矽基板上的高頻表現。 在第三章，我們主要討論場效電板增強型氮化鋁鎵/氮化鎵高電子遷移率電晶體。我們製作了不同p型氮化鎵長度及閘極長度的元件。並探討在相同閘極長度下，p型氮化鎵長度不同時對元件產生的影響。發現元件之閾值電壓會隨著p型氮化鎵長度增加而增加。原因是當p型氮化鎵長度大於閘極時，閘極對二維電子氣控制力下降，需要施加更大的閘極電壓控制p型氮化鎵邊緣的二維電子氣。接著也做了元件切換速度的比較，並且透過閘極電容簡單估算閘極電荷大小，了解不同類型的閘極結構，對切換速度的影響。 | zh_TW |
| dc.description.provenance | Made available in DSpace on 2022-11-23T09:19:35Z (GMT). No. of bitstreams: 1 U0001-2501202223000400.pdf: 4127296 bytes, checksum: fbe32bf4f2411dc6e211a0339f18333e (MD5) Previous issue date: 2022 | en |
| dc.description.tableofcontents | 口試委員審定書 i 誌謝 ii 摘要 iii Abstract iv Contents vi List of figures viii List of Tables xi Chapter 1 Introduction 1 1.1 Overview of GaN Applications 1 1.2 Physical mechanism of AlGaN/GaN HEMTs 2 1.3 Parasitic loss of GaN-on-Si HEMTs 4 1.4 Enhancement-mode AlGaN/GaN HEMTs 5 1.5 Thesis Outline 7 Chapter 2 RF characterizations of GaN HEMTs with Si removal 8 2.1 Introduction 8 2.2 Fabrication of GaN RF HEMTs by gate-first approach with selective Si via 9 2.3 DC electrical properties 13 2.4 Microwave performance 17 2.5 Small signal circuit model 29 2.6 Summary 32 Chapter 3 Electrical characterizations of normally-off pGaN/AlGaN/GaN HEMTs with different gate structure 34 3.1 Introduction 34 3.2 Fabrication of e-mode p-GaN/GaN/AlGaN HEMTs 35 3.3 DC electrical properties 38 3.4 Switching Characteristics 45 3.5 Gate charge estimate by gate capacitance measurement 48 3.6 Summary 51 Chapter 4 Conclusion 52 Reference 54 | |
| dc.language.iso | en | |
| dc.subject | 閘極電荷 | zh_TW |
| dc.subject | 高電子遷移率電晶體 | zh_TW |
| dc.subject | 增強型氮化鋁鎵/氮化鎵高電子遷移率電晶體 | zh_TW |
| dc.subject | 矽基板移除技術 | zh_TW |
| dc.subject | 高頻訊號 | zh_TW |
| dc.subject | 小訊號模型 | zh_TW |
| dc.subject | 閾值電壓 | zh_TW |
| dc.subject | 切換時間 | zh_TW |
| dc.subject | microwave power | en |
| dc.subject | GaN-on-Si HEMTs | en |
| dc.subject | enhancement-mode HEMT | en |
| dc.subject | substrate removal | en |
| dc.subject | gate charge | en |
| dc.subject | switching characteristics | en |
| dc.subject | threshold voltage | en |
| dc.subject | small-signal model | en |
| dc.title | 短閘極場效電板增強型氮化鋁鎵/氮化鎵高電子遷移率電晶體製作與電流特性分析 | zh_TW |
| dc.title | Fabrication and Investigation of Current Behavior of Enhancement-Mode p-GaN/AlGaN/GaN High Electron Mobility Transistor with Submicron Gate Length | en |
| dc.date.schoolyear | 110-1 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 吳育任(Jia-Jyun Dong),吳肇欣(Shou-Hao Chiang),林恭如(Sendo Wang),(Yi-Chin Chen) | |
| dc.subject.keyword | 高電子遷移率電晶體,增強型氮化鋁鎵/氮化鎵高電子遷移率電晶體,矽基板移除技術,高頻訊號,小訊號模型,閾值電壓,切換時間,閘極電荷, | zh_TW |
| dc.subject.keyword | GaN-on-Si HEMTs,enhancement-mode HEMT,substrate removal,microwave power,small-signal model,threshold voltage,switching characteristics,gate charge, | en |
| dc.relation.page | 56 | |
| dc.identifier.doi | 10.6342/NTU202200208 | |
| dc.rights.note | 同意授權(全球公開) | |
| dc.date.accepted | 2022-01-27 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
| Appears in Collections: | 光電工程學研究所 | |
Files in This Item:
| File | Size | Format | |
|---|---|---|---|
| U0001-2501202223000400.pdf | 4.03 MB | Adobe PDF | View/Open |
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